Impact of radiation damage on the photoconductor and photodiode properties of GaN core–shell p–n junction microwires

Abstract

GaN nano- and microwires have gained increasing interest due to their unique geometry and flexibility, and have already been successfully applied in optoelectronics. One important advantage is their superior crystalline quality in comparison to their thin-film counterparts. Beside this, GaN is also known for its high radiation hardness, owed to the large displacement energy of the atoms in its crystal lattice and efficient dynamic annealing properties. In this work, single GaN core–shell p–n junction microwires have been processed into radiation detectors and the induced damage effects on the electrical and optoelectrical characteristics, when irradiating the detectors with 1 and 2 MeV protons, have been studied. By measuring the dark and photocurrent as a function of the irradiation fluence we show that for fluences up to 1×1014 protons/cm2 there is no significant modification of any of the parameters and that serious degradation only occurs for fluences above 1×1015 protons/cm2. Furthermore, we also observe that the dark current decays at a lower irradiation fluence with respect to the photocurrent due to the different impact of the created irradiation defects on the properties of the neutral region and the p–n junction. As a consequence, the signal-to-noise ratio of the detector is strongly enhanced, especially when applying a higher reverse bias. Thermal treatments furthermore show that the degree of recovery of the properties of the detectors is strongly dependent on the irradiation fluence. The detector irradiated with a fluence of 5×1014 protons/cm2 almost completely retrieved its pre-irradiation characteristics whereas the detector irradiated with 5×1015 protons/cm2 only showed a minimal recovery.