Post-focus expansion of ion beams for low fluence and large area MeV ion irradiation: Application to human brain tissue and electronics devices

Abstract

Irradiation with ∼3MeV proton fluences of 106–109protonscm−2 have been applied to study the effects on human brain tissue corresponding to single-cell irradiation doses and doses received by electronic components in low-Earth orbit. The low fluence irradiations were carried out using a proton microbeam with the post-focus expansion of the beam; a method developed by the group of Breese [1]. It was found from electrophysiological measurements that the mean neuronal frequency of human brain tissue decreased to zero as the dose increased to 0–1050Gy. Enhancement-mode MOSFET transistors exhibited a 10% reduction in threshold voltage for 2.7MeV proton doses of 10Gy while a NPN bipolar transistor required ∼800Gy to reduce the hfe by 10%, which is consistent the expected values.