Low Ion Beam Research Articles

Effect of helium ion irradiation on the microstructure, mechanical properties and surface morphology of Inconel 625 alloy

Inconel 625 alloy is mainly used for reactor pressure vessel, fuel cladding, nuclear fuel elements and cryogenic channels for cooling high temperature superconductors in Tokamaks. This study focuses on deciphering the impact of helium ion irradiation on the properties of Inconel 625 alloy. Helium-ions interaction with material leads to blistering, void formation, swelling, and degradation of mechanical properties. To understand these effects, the samples of Inconel 625 alloy were irradiated by helium-ion fluence beams at three different helium-ion beam fluence (1 × 1013, 1 × 1014, 1 × 1015 He/cm2). A decrease in grain size was observed from 34.4 to 19.0 nm with an increase in the ion fluence. According to the results, the residual strain is increased, from 1.8 to 43.0 micro-strain with the increase in helium-ion fluence, however structure is relaxed with decrease in micro-strain at higher helium-ion fluence (1 × 1015 He/cm2) and also there is a prominent increase in grain size. The surface morphology as observed by scanning electron microscope (SEM) illustrates the fuzz formation at low fluence (1 × 1013 He/cm2), while samples irradiated with high helium ion fluence (1 × 1015 He/cm2) showed grain growth, voids and surface blistering (deep valleys). An increase in hardness value at low helium-ion beam fluence is observed due to the presence of large population of defects. However, at higher helium-ion beam fluence, a decrease in hardness value is observed. This decrease might be attributed to the dislocation clustering and grain growth.

A compact radio-frequency ion source for high brightness and low energy spread negative oxygen ion beam production.

A high brightness and low energy spread (∆E) ion source is essential to the production of a high-quality primary ion beam applied in secondary ion mass spectrometry (SIMS). A compact 13.56MHz radio-frequency (RF) ion source with an external planar spiral antenna has been developed as a candidate ion source for the production of negative oxygen ion beams for SIMS application. This ion source is designed with a three-and-a-half-turn water-cooled planar antenna for RF power coupling, a multi-cusp magnetic field for effective plasma confinement, and a three-electrode extraction system. The experimental results show that more than 50 µA negative oxygen ion beams have been extracted, which consist of 56% O-, 25% O2-, and 19% O3-. The ion energy distribution of the negative oxygen ion beam exhibits a Gaussian distribution with a minimum ∆E of 6.3eV. The brightness of the O- beam is estimated to be 82.4Am-2 Sr-1V-1. The simulation, design, and experimental study results of this RF ion source will be presented in this paper.

Determining the oxygen detection limit with magnetic sector dynamic secondary ion mass spectrometry (SIMS)

Dynamic SIMS is often used in evaluating the concentration of impurities in solids because of its high sensitivity and depth profiling capabilities with good depth resolution and high throughput. Continuous ion beam sputtering with a high-density primary beam provides high sensitivity and reduced background contribution from residual gases within the analytical chamber. Numerical simulations along with the data acquired in the real depth profiling experiment show a good agreement of the simple model, assuming that the surface uptake of the oxygen under Cs bombardment depends on the Cs surface retention concentration. In cases where high depth resolution is desired, requiring a low primary ion beam energy, a background subtraction option will help provide better detection limits. It is proposed to perform the background subtraction based on the difference between the continuous and interleaving sputtering modes of dynamic SIMS. The experiments performed on different instruments using different sputtering rate conditions (and different impact energies) show the power function dependence of oxygen detection limit on the reversed sputter rate variation or sputtering beam density. The proposed detection limit dependence curve can be used for analytical specifications benchmarking in most magnetic sector SIMS instruments.

SERS sensing of Metanil yellow in turmeric solution using self-organized nanoparticle arrays grown on Ion beam patterned soda-lime glass

Metanil yellow is a potential carcinogen that is commonly used as a food adulterant in turmeric powder. In this study, we detected Metanil Yellow from turmeric powder solution using a Surface Enhanced Raman Spectroscopy (SERS) substrate based on nano patterned soda-lime glass. Low amplitude ripples with an average wavelength around 65 nm was produced on commercially available soda-lime glass using low energy argon ion beam irradiation. Large area SERS templates were produced by growing self-organized ordered Ag nanoparticles on the rippled soda-lime glass. The optical analysis of the produced substrates shows the anisotropic plasmonic response and better Localized Surface Plasmon Resonance (LSPR) activity than Ag nanoparticles grown on rippled Si substrate. A biaxial layer consisting of Lorentz and Drude oscillators describes the real and imaginary parts of the dielectric function. The SERS analysis using Crystal Violet (CV) molecules demonstrates a five-fold improvement in the efficiency of silver grown on glass ripples than silver grown on Si ripples. We have tested the substrate for detecting Metanil yellow up to 10-6 M concentration in the water. Further, using the substrate, up to 10-4 M concentration of Metanil Yellow is detected from the turmeric solution.

Focused ion beam lithography for position-controlled nanowire growth

To exploit the promising properties of semiconductor nanowires and ensure the uniformity required to achieve device integration, their position on the growth substrate must be controlled. This work demonstrates the direct patterning of a SiO2/Si substrate using focused ion beam (FIB) patterning to control self-catalyzed GaAsSb nanowire growth in molecular beam epitaxy (MBE). Besides position control, FIB patterning parameters influence nanowire yield, composition and structure. Total ion dose per hole is found to be the most important parameter. Yield of single nanowires ranges from ≈34% to ≈83%, with larger holes dominated by multiple nanowires per hole. Areas exposed to low ion beam doses are selectively etched by routine pre-MBE HF cleaning, enabling patterning and nanowire nucleation with minimal damage to the Si substrate. The optical and electronic properties of nanowires are found to depend on the ion dose used during patterning, indicating the potential for FIB patterning to tune nanowire properties. These findings demonstrate the possibility for a FIB lithography protocol which could provide a rapid and direct patterning process for flexible controlled nanowire growth.

Gigaohm and Teraohm Resistors in Femtoamp and Picoamp Electrospray Ionization

The femtoamp electrospray ionization (femtoESI) mode has been shown to exhibit unique characteristics that may facilitate ionization efficiency studies and experiments requiring low ion beam flux. Investigation of femtoESI was hindered by a tiny, applied voltage window of 10-100 V, beyond which ionization currents quickly jumped to nanoamps. This window was difficult to locate because the exact onset voltage fluctuates due to variations in ion source alignments. Large resistors (0.1-100 TΩ) in series effectively expanded the femtoESI applied voltage range, up to 1400 V. By swapping resistors, rapid alternation allows for the comparison of both ESI modes under the same alignment. In peptide mixtures, analytes with lower surface activity are suppressed in the nanoESI mode whereas the femtoESI mode shows signal enhancement of less surface-active species. For protein solutions, there is little change in the charge states generated but the femtoESI mode does show a decrease in the average charge state of protein peaks. Peptides and proteins analyzed in the femtoESI mode also tend to generate higher intensity sodiated peaks over protonated peaks at specific charge states compared with nanoESI mode operation.

Development of an energy spread analyzer for secondary ion mass spectrometry ion source

The energy spread (ΔE) of an ion source is an important parameter in the production of a finely focused primary ion beam applied in secondary ion mass spectrometry (SIMS). A variable-focusing retarding field energy analyzer (RFEA) has been developed and tested with an Ar+ beam and an oxygen ion beam extracted from a 2.45 GHz microwave ion source, which is developed as a candidate ion source for SIMS applications. The simulation results show that the relative resolution ΔE/E of the designed RFEA reaches 7 × 10−5. The experimental results indicate that a focusing electrode can improve the ΔE measurement results, which is consistent with the simulation results. The ion energy distributions of the Ar+ beam and oxygen ion beam are of Gaussian distribution with the value of ΔE of 3.3 and 2.9 eV, respectively. These results indicate that the designed RFEA is reliable for measuring the ion beam energy spread. The developed RFEA is also used to study the plasma behavior in different settings, which reveals that plasma stability is critical to making a low energy spread ion beam. This paper will present the simulation, design, and test of the variable-focusing RFEA. Preliminary ion beam quality studies with this instrument will also be discussed.

Quasi-Alvarez drift-tube linac structures for heavy ion therapy accelerator facilities

Next generation heavy ion therapy and research facilities require efficient accelerating structures. Particularly, at low beam energies, right after the standard scheme of the ion source, low-energy beam transfer, and radio-frequency quadrupole (RFQ), several options for accelerating structures are available including the classic drift-tube linac (DTL), the interdigital H-mode DTL (IH-DTL), and superconducting quarter-wave resonators. These structures need to integrate the beam acceleration with the focusing channel, nowadays typically provided by permanent-magnet quadrupoles (PMQs). The frequency of operation needs to be in line with that of the RFQ structure, and it has been chosen at 750 MHz for practical considerations for the Next Ion Medical Machine Study (NIMMS) that is the application focus of this manuscript. While classic DTL structures at low ion beam energies do not provide enough space for PMQs at that frequency within a single $\ensuremath{\beta}\ensuremath{\lambda}$ period, IH-DTL structures do not provide the regular focusing channel with consequences on the beam quality. For these reasons, quasi-Alvarez drift-tube linac (QA-DTL) structures are reevaluated in this manuscript as they might fill this gap. They have not received much attention in the literature so far and therefore their design is described in detail. The design procedure presented here may serve as a blueprint for DTL design in general. In addition to the overall rf design, axial field stabilization with a new technique and multiphysics studies of the rf structure are described. A cost estimation completes the NIMMS QA-DTL study.

Tunable alignment of liquid crystals between anisotropic polyacrylamide thin layer

We report uniform liquid crystal (LC) alignment on a polyacrylamide (PAM) film via ion beam (IB) treatment. The IB incidence angle is adjusted from 15° to 75°. Physicochemical modifications caused by the IB process are investigated by atomic force microscopy and x-ray photoelectron spectroscopy. Low IB incidence results in biased and bumpy surfaces, whereas high IB incidence forms isotropic and smooth surfaces; both of these are unsuitable for uniform LC alignment. The 45° IB incidence induces anisotropic surface chemical reformations, and these modifications induce van der Waals forces between the LCs and modified PAM, thereby leading to uniform LC alignment. The LC alignment state is verified by polarized optical microscopy and pretilt angle. The electro-optical characteristic of the modified PAM showed excellent switching performance in twisted-nematic LC system. Thus, the IB-treated PAM film is a good candidate for LC alignment layers and suitable for LC device applications.

Laboratory Simulation of Solar Wind Interaction With Lunar Magnetic Anomalies

AbstractMagnetic anomalies on the surface of the Moon interact with the solar wind plasma flow, resulting in both magnetic and electrostatic deflection/reflection of charged particles. Consequently, surface charging in these regions differs from regions without magnetic fields. Using the Colorado Solar Wind Experiment facility, this interaction is investigated with high‐energy flowing plasmas (100–800 eV beam ions) that are incident upon a magnetic dipole embedded beneath an insulating surface. The dipole moment is perpendicular to the surface. The plasma potential distribution is measured above the surface using an emissive probe. In the dipole lobe regions the surface is charged to significantly higher positive potentials by the un‐magnetized ion beam impinging on the surface while the electrons remain excluded by the magnetic field. At low ion beam energies the results agree with these expectations as the surface potential follows the ion beam energy. However, at high beam energies, the surface potentials in the electron‐shielded lobe regions remain significantly lower than the expected magnitude. Surprisingly, electrons are detected in the shielded regions by a Langmuir probe. A test particle simulation indicates that secondary electrons induced by the high energy ion beams impinging on the surface can enter the shielded regions, thus lowering the surface potential.

Determination of Cu, Zn, Ga, Ag, Cd, In, Sn and Tl in Geological Reference Materials and Chondrites by Isotope Dilution ICP‐MS

Mass fractions of Cu, Zn, Ga, Ag, Cd, In, Sn and Tl were determined via isotope dilution quadrupole ICP‐MS in twenty‐one geological reference materials (RMs) and the carbonaceous chondrites Orgueil (CI1), Murchison (CM2) and Allende (CV3). The RMs comprise basaltic/mafic (BCR‐2, BE‐N, BHVO‐1, BHVO‐2, BIR‐1, BRP‐1, JB‐2, OKUM, W‐2, WS‐E), intermediate/felsic (AGV‐2, G‐2, JA‐2, RGM‐1), ultramafic (DTS‐2b, MUH‐1, PCC‐1, UB‐N) and sedimentary (MAG‐1, OU‐6) rocks. Pressure digestion was applied for nonbasaltic samples to ensure effective sample digestion. For basaltic RMs, hot plate digestion was found to be sufficient for a quantitative recovery of the target elements. To minimise interferences and increase ion beam intensities during isotope ratio analyses by ICP‐MS, separation of the target elements was carried out from single sample aliquots using a novel anion exchange procedure. The intermediate precision (2s) estimated from two to four replicate analyses was usually < 4% and results are in agreement with literature data, where available. Especially for Ag and Tl, the intermediate precision was compromised, likely due to low ion beam intensities and, hence, higher background and blank contributions. For ultramafic RMs, nugget effects and incomplete digestion might compromise the intermediate precision. Results for the carbonaceous chondrites Orgueil (CI1), Murchison (CM2) and Allende (CV3) agree well with previously reported data.

Controlled deposition of size-selected metal nanoclusters on prepatterned substrate

An endeavor of organizing Cu nano-particles of controlled size in ordered arrays at room temperature is reported. This involves the guided deposition of size-selected nanoparticles otherwise known as nanoclusters via periodic modulation of the substrate surface. Ultra-high vacuum compatible magnetron-based gas-aggregation type source combined with a quadrupole mass filter (QMF) has been employed to produce the size-selected nanoclusters whereas the surface modulations (ripples) in the nanoscale are induced by low energy oblique angle ion beam irradiation. Morphological aspects of deposited nanoclusters and the substrates were characterized by high-resolution scanning electron microscopy (HRSEM) and atomic force microscopy (AFM). The chemical composition of the deposited nanoclusters was characterized by X-ray photoelectron spectroscopy. The alignment of size-selected metal nanoclusters along the substrate-patterns is observed. Depending upon deposition conditions quality of the organization varies. The optimum angle of deposition for the improved alignment depends on the pattern parameters of the substrate.

The influence of low energy titanium ion beam irradiation on secondary electron emission of metal materials by electron impact

Argon ion beams with energy from hundreds eV to several keV can suppress the secondary electron emission (SEE) on surface of metal materials by changing surface morphology and chemical composition of the materials through surface sputtering. In this work, it was found that the low-energy titanium ion irradiation with an average energy from 40 keV to 100 keV did not apparently change the surface morphology and chemical composition of the metal materials, but still significantly reduced the secondary electron yield (SEY) of the materials. Pulsed titanium ion beams generated by an ion implanter, which is based on metal evaporation vacuum arc (MEVVA) ion source, were adopted to irradiate oxygen-free copper and stainless-steel samples. The fluence of titanium ions was in the range of 1 × 1015 to 1 × 1017 ions/cm2. By comparing the effects of different titanium ion energies and fluence on the roughness, chemical composition, total SEY of the sample surface, and calculating the ion range, sputtering yield, nuclear stopping power and defect distribution of titanium ions in these materials, it is reasonable to believe that the irradiation damage caused by titanium ion implantation increases the probability of trapping of the low-energy secondary electrons (SEs) by defects, leading to better SEE suppressing.

Proton acceleration via the TNSA mechanism using a smoothed laser focus

In this work, we present the results of an experiment aiming at proton acceleration using a focus with a homogeneous intensity distribution, called smoothed focus. To achieve this goal, we implemented a phase plate before the pre-amplifier of the Petawatt High-Energy Laser for Heavy Ion EXperiments laser facility. The phase plate was used for the first time at a high-power short-pulse laser. Demonstrating a low divergent ion beam was the main goal of this work. Numerical simulations using the particle-in-cell code Extendable PIC Open Collaboration estimated a 2–5 times reduction in the angular divergence of the proton beam using a phase plate due to a smoother sheath at the rear side of the target. However, the reduction in the angular divergence was not sensible according to the experimental data. A positive point is that the spectrum of protons that are generated with the smoothed beam is shifted toward lower energies, provided that the laser absorption is kept in check, compared to the Gaussian proton spectrum. Moreover, the number of protons that are generated with the smoothed beam is higher than the ones generated with the Gaussian beam.

Improving transport and optimizing deceleration of ion beams from electron cyclotron resonance multicharged ion sources.

Electron cyclotron resonance ion sources (ECRISs) are widely applied for ion beam applications, e.g., plasma processing, cancer therapy, and ion engine of an artificial satellite. In our ECRIS, we aim at producing and extracting various ion beams from this device, in particular, Xeq+ ion beams at low energy. In the aerospace engineering field, there are problems of accumulated damages on various component materials caused by low energy of Xe ions from the engine. There are not enough experimental sputtering data for satellite materials at the Xeq+ in the low energy region. Then, we are trying to investigate the sputtering yield experimentally by irradiating the low energy Xe ion beams. To perform this experiment, it is necessary to acquire a certain amount of beam current with low energy. Then, we generate the low energy ion beams by the following steps: First, the ion beams are extracted from the ECRIS at high voltage. Next, these are transported to an ion beam irradiation system (IBIS). Finally, the ion beams are decelerated by the deceleration voltage in the IBIS. We adjusted the beamline. We measure the characteristics of the transport efficiency and decelerated ion beam currents. In this paper, we describe the experimental setup using an existing ECRIS for decelerated heavy ion beams and the results of decelerated ion beam currents.

Development of an all permanent magnet ECR ion source for low and medium charge state ions production

An all permanent magnet Electron Cyclotron Resonance ion source-LAPECR1U (Lanzhou All Permanent magnet ECR ion source no.1 Upgraded), has been built at IMP in 2017 to satisfy the requirements of LEAF (Low Energy intense-highly-charged ion Accelerator Facility) for first two years commissioning. LAPECR1U was designed to be operated at 14.5 GHz to produce intense low and medium charge state ion beams. LAPECR1U features a compact structure, small size, and low cost. A cone-shape iron yoke in injection side and an iron plasma electrode in extraction side were used to enhance the axial magnetic field strength. The typical parameters and the preliminary beam results of the source are given in this paper.

Design and development of an Allison type emittance scanner for the SPIDER ion source.

Low divergence negative ion beams are crucial for the development of ITER-like fusion reactors. SPIDER is the prototype beam source of the ITER heating neutral beam injector, and it recently started beam acceleration, up to a voltage of 30 kV. The main diagnostics used to measure beamlet divergence are a movable diagnostic calorimeter (STRIKE), which gives the thermal footprint of the beamlets; beam emission spectroscopy; and visible imaging. These systems do not allow a direct measurement of single beamlet phase-space distribution, which is useful for comparison with numerical simulations and to estimate accelerator performances. To this purpose, a movable Allison type emittance scanner for the SPIDER negative ion beam was developed and proposed for the installation on the STRIKE supporting structure. This paper describes the numerical analyses performed to dimension the mechanical and electrical components, such as the Faraday cup and the slits. An analytical approach based on the integration of an arbitrary phase-space distribution was adopted in order to simulate the device performances. The constraints due to the operation in a high heat load environment are discussed.

Ion bombardment induced formation of self-organized wafer-scale GaInP nanopillar assemblies

Ion sputtering assisted formation of nanopillars is demonstrated as a wafer-scale, lithography-free fabrication method to obtain high optical quality gallium indium phosphide (GaInP) nanopillars. Compared to binary materials, little has been reported on the formation of self-organized ternary nanostructures. Epitaxial (100) Ga0.51In0.49P layers lattice matched to GaAs were sputtered by nitrogen (N2) ions with relatively low ion beam energies (∼400 eV) to reduce ion bombardment induced damage. The influence of process parameters such as temperature, sputter duration, ion beam energy, and ion beam incidence angle on the pillar formation is investigated. The fabricated GaInP nanopillars have average diameters of ∼75–100 nm, height of ∼220 nm, and average density of ∼2–4 × 108 pillars/cm2. The authors show that the ion beam incidence angle plays an important role in pillar formation and can be used to tune the pillar shape, diameter, and spatial density. Specifically, tapered to near cylindrical pillar profiles together with a reduction in their average diameters are obtained by varying the ion beam incidence angle from 0° to 20°. A tentative model for the GaInP nanopillar formation is proposed based on transmission electron microscopy and chemical mapping analysis. μ-Photoluminescence and μ-Raman measurements indicate a high optical quality of the c-GaInP nanopillars.

Evaluation of the effect of low fluence ion beam pre-damage with sequential high fluence ion beam exposure on the characteristics of the resultant surface

In this work, we present the ripple patterns formation on silicon for different energy predamage and sequential Ar+ ion irradiation. Firstly, the three set of samples namely set-A, set-B and set-C were prepared, which differ in depth locations of amorphous/crystalline (a/c) interface from the free surface, using 100 keV, 200 keV and 300 keV Ar+ oblique (60o) irradiation of silicon (Si) at a fluence of 1 × 1015 ions/cm2. The depth locations were estimated using Rutherford backscattering spectroscopy in channeling mode (RBS-C) and the cross-sectional transmission electron microscopy (X-TEM). The depth locations were found to be ~147 nm, 212 nm, and 302 nm for set-A, set-B and set-C samples using TEM measurement, respectively. Further, the sequential second stage irradiation for ripples growth was performed using 100 keV Ar+ beams for all the sets. After the 2nd stage of irradiation, the dimensions of ripple patterns were estimated using the atomic force microscopy (AFM). Similar ripple patterns formation on all the three sets after sequential irradiation shows the insignificant role of different energy predamage in surface patterning of Si (100) surface. An approach of re-utilization of predamaged silicon for nanopatterns growth is proposed.

Precise tuning chemistry and tailoring defects of graphene oxide films by low energy ion beam irradiation

Precise tuning chemistry and tailoring nanopores of graphene oxide (GO) thin films are vital for their application for liquid and gas separation. In this work, ultra-thin GO films with thicknesses of about 150 nm were prepared and then modified by a low energy carbon ion beam with ion fluences ranging from 1 × 1015 ions·cm−2 to 1 × 1017 ions·cm−2. An ion fluence of 1 × 1016 ions·cm−2 is a threshold for the changes to the surface geometry (i.e. the chemical state and the consequent morphology) of the GO films. Moreover, X-ray photoelectron spectroscopy (XPS) reveals that oxygen loss in ion beam-induced reduction of GO films was mainly by the elimination of the unstable CO species. Raman spectroscopy indicates that a mass of defects with a mean defect distance of about 1.4 nm was generated in GO films by C+ irradiation. According to SRIM simulation, an average of 208 carbon vacancies were created in the GO film per impinging C+. These results suggest that low energy carbon ion beam irradiation is promising for simultaneously reducing and drilling nanoscale pores on GO surfaces in a controllable manner, which could be used for engineering GO-based separation membranes.