Low Incident Electron Energies Research Articles

Effects of sputtering pressure on microstructure and secondary electron emission properties of AlN film prepared by magnetron sputtering

In this paper, aluminum nitride (AlN) thin films were prepared by reactive radio-frequency magnetron sputtering at different sputtering pressures and the crystalline structure, surface morphology and secondary electron emission (SEE) properties of the AlN films were studied in detail. The experimental results reveal that AlN films present the preferred orientation of a-axis (100), and the grain size and surface roughness of the film decrease with the increase of sputtering pressure. Additionally, the SEE coefficient of the film reaches a maximum of 4.3 at 200 eV when the sputtering pressure is 0.55 Pa and is relatively stable under the continuous bombardment of an incident electron with the energy of 200 eV. Thus, the AlN thin film prepared under the optimized sputtering pressure has a relatively high and stable coefficient at a low incident electron energy, which promotes its potential application in the high-gain and long-life electron multipliers.

Fast computation approach of electron-impact ionization and excitation cross-sections for atoms and ions with medium- and high-<i>Z</i> elements

The atomic data of medium- and high-<i>Z</i> elements, such as electron-impact ionization and excitation cross-sections, possess extensive applications in fields such as fusion science and X-ray interactions with matter. There are atoms and ions in high energy density plasma, with different charge states and energy states ranging from ground states to highly excited states, and the cross-sections of each charge state and energy state need to be calculated. The bottlenecks limiting computational performance are the inevitable relativistic effects of medium- and high-<i>Z</i> elements and the extremely complex electronic configurations. Taking tantalum (Ta) for example, by using the relativistic Dirac-Fock theory and distorted wave model, we compute the electron-impact ionization and excitation cross-sections of Ta from the ground state atom up to Ta<sup>72+</sup> with the incident electron energy range of 1–150 keV. The detailed configuration accounting (DCA) reaction channel cross-sections are derived by summing and weighting the original detailed level accounting (DLA) cross-sections. After examining the data, two regularities are found. In terms of DLA, the pre-averaging DCA cross-sections have varying initial DLA energy levels but are typically close to each other. There is not a straightforward function that can explain the discrepancies between them. In terms of DCA, inner subshells typically contribute very little to the total cross-section as their ionization and excitation cross-sections are orders of magnitude smaller than those of outer subshells. We provide two techniques to reduce the computational costs based on the regularities. To minimize the total number of DLA reaction channels used in the computation, the initial DLA energy levels can be randomly sampled. Through a Monte Carlo numerical experiment, we determine the appropriate number of sampling points that can reduce the total number of DLA channels by an order of magnitude while maintaining a 5% error margin. In terms of impact ionization, since small cross-section DCA channels are insignificant, only a tiny portion of the DCA channels are required to preserve a 95% accuracy of the entire cross-section. It is possible to use the analytical Binary Encounter Bethe (BEB) formula to determine which DCA channels should be neglected before the computation to reduce computational costs. In terms of electron-impact excitation, just the cross-sections of the same excited subshells as the preserved ionized subshells, which are determined in the previous electron-impact ionization (EII) calculations, are needed. Finally, we compare our EII results with theoretical and experimental results. In the low incident electron energy range of below 2 keV, our results accord with the theoretical result of the 6s EII cross-section of the Ta atom and the experimental result of the total EII cross-section of the Ta<sup>1+</sup> ion. In the high energy range of below 150 keV, our results are also consistent with the theoretical result of the 1s EII cross-section of the Ta atom and the experimental result of the 1s EII cross-section of the Cu atom. Our results reasonably match the previous experimental and theoretical results in low-energy range and high-energy range, inner subshell and outer subshell, indicating the accuracy of our calculation. The proposed optimizing strategy can be applied to various medium- to high-<i>Z</i> elements and is compatible to most computation codes.

Theoretical study of (e,2e) triple differential cross section of 1b3g orbital of ethylene by vibrational multi-center distorted-wave method

The vibrational motions are usually neglected when calculating (e,2e) triple differential cross sections (TDCSs) of molecules. Here, multi-center distorted-wave method (MCDW) has been modified by including molecular vibrations. This vibrational MCDW method is employed to calculate the TDCSs of 1b3g orbital of ethylene at low (100 eV) and medium (250 eV) incident electron energies in coplanar asymmetric kinematic condition. The results show that molecular vibrations significantly influence the angular distributions of the TDCSs, especially in the binary region along momentum transfer near the Bethe ridge.

The Xe autoionizing states in kinetic energy region (3–14) eV studied at high and low incident electron energies

The Xe autoionizing states in kinetic energy region (3–14) eV studied at high and low incident electron energies

Excitation of the 2P State of Atomic Hydrogen by Electron Impact

The excitation cross sections of the 2P state of atomic hydrogen at low incident electron energies (from 0.755 to 3.5 Ry) were calculated using the variational polarized orbital method. Up to 13 partial waves (L = 1, 13) were used to obtain converged cross sections in the above energy range. The importance of the long-range forces is pointed out in the threshold region, and behavior of the cross section is indicated near the threshold. The polarization P of radiation emitted at right angle to the incident electron beam was calculated and the perpendicular cross section was also calculated.

HF Formation through Dissociative Electron Attachment-A Combined Experimental and Theoretical Study on Pentafluorothiophenol and 2-Fluorothiophenol.

In chemoradiation therapy, dissociative electron attachment (DEA) may play an important role with respect to the efficiency of the radiosensitizers used. The rational tailoring of such radiosensitizers to be more susceptive to DEA may thus offer a path to increase their efficiency. Potentially, this may be achieved by tailoring rearrangement reactions into the DEA process such that these may proceed at low incident electron energies, where DEA is most effective. Favorably altering the orbital structure of the respective molecules through substitution is another path that may be taken to promote dissociation up on electron capture. Here we present a combined experimental and theoretical study on DEA in relation to pentafluorothiophenol (PFTP) and 2-fluorothiophenol (2-FTP). We investigate the thermochemistry and dynamics of neutral HF formation through DEA as means to lower the threshold for dissociation up on electron capture to these compounds, and we explore the influence of perfluorination on their orbital structure. Fragment ion yield curves are presented, and the thermochemical thresholds for the respective DEA processes are computed as well as the minimum energy paths for HF formation up on electron capture and the underlying orbital structure of the respective molecular anions. We show that perfluorination of the aromatic ring in these compounds plays an important role in enabling HF formation by further lowering the threshold for this process and through favorable influence on the orbital structure, such that DEA is promoted. We argue that this approach may offer a path for tailoring new and efficient radiosensitizers.

Soliton-Dependent Electronic Transport across Bilayer Graphene Domain Wall.

Layer-stacking domain wall in bilayer graphene is one type of topological defects that can greatly affect the electronic properties of bilayer graphene and therefore lead to nontrivial transport behaviors. An outstanding question on the layer stacking domain wall is how the electrons hop between two adjacent stacking domains. Here we report the first experimental observation of electronic transport across bilayer graphene domain walls by combining near-field infrared nanoscopy and scanning voltage microscopy techniques. We observe markedly different electron transport behaviors across the tensile- and shear-type domain walls. The tensile-type domain wall is highly reflective of low-energy incident electrons, but becomes more transparent when the electron density and the Fermi energy are increased by electrostatic gating. In contrast, the shear-type domain wall is always highly transparent at different gate voltages. Such soliton-dependent electronic transport can open up new routes to engineer novel nanoelectronic devices based on layer-stacking domain walls in bilayer graphene.

TES Microcalorimeters for PTOLEMY

The PTOLEMY project is devoted to directly detect the cosmic neutrino background. A key point for the project success is the development of a device which is capable of detecting electrons with an energy resolution lower than 0.05 eV. Microcalorimeters based on transition-edge sensors are among the best candidates since they already reach 0.11 eV of energy resolution for telecomm photons. To further improve the energy resolution, while maintaining a suitable saturation energy, it is necessary to reduce the transition temperature. This could be achieved by proximity effect of a normal-superconducting bilayer. To this aim, TiAu very thin films are under development to demonstrate the feasibility of reaching 0.05 eV energy resolution for light pulses of few eV. Thanks to the high electron stopping power of metals, the penetration depth of low energy incident electrons is limited to few nanometers and, with respect to visible light, we expect a high detection efficiency, while keeping similar dark counts and energy resolution.

Investigation of the Image Contrast in an Ultra-Low Voltage Scanning Electron Microscope Using an Auger Electron Spectrometer.

Surface-sensitive information on a bulk sample can be obtained by using a low incident electron energy (low accelerating voltage/landing voltage) in a scanning electron microscope (SEM). However, topography and composition contrast obtained at low incident electron energies may not be intuitive and should be analyzed carefully. By combining an Auger electron spectrometer (AES) with a low incident electron energy SEM (LE-SEM), we investigated the SEM contrast carefully by separating the secondary electron (SE) and back-scattered electron (BSE) components with high accuracy. For this, we modified an AES to measure the electron energy in the range of 0–0.6 keV with a sample bias voltage of 0 to −0.3 keV. We could clearly observe reversed brightness of gold and carbon (graphite) in BSE images when the energy of the incident electrons was reduced to 0.2–0.3 keV. In addition, reflected electron energy spectroscopy (REELS) is known to be a tool for chemical state analysis of the sample. We demonstrated that it is possible to study the electron states of graphite, diamond, and graphene by acquiring low incident energy REELS spectra from their surfaces with the newly modified AES. This will be a new method for analyzing the electron states of local areas of a surface.

Measurements of electron emission under electron impact on BN sample for incident electron energy between 10 eV and 1000 eV

Electron emission measurements have been performed on a BN sample by using a new specific protocol and experimental set-up, which allows characterizing electron emission under electron impact on resistive material in a short time and with a wide variety of extracted data: total electron emission yield, emitted electron energy distribution, elastically backscattered electron emission yield and energy efficiency of electron-surface interaction. Methodology, calibration, biases corrections and results are presented in this letter. Results are compared to that measured on another material . As there are few published data on electron emission at low incident electron energy on BN sample, it is expected that these measurements could be useful for numerous studies implying electron emission on BN surface.

Monte Carlo simulation of incident electrons passing through thin metal layer

A Monte Carlo simulation using two schemes, the discrete energy loss approach and the continuous slowing down approximation, was implemented in C++ to calculate the energy transmission coefficient and average energy loss for low-energy (1–10 keV) incident electrons passing through a thin metal layer. The simulation model uses the Ashley model for electron inelastic scattering, the electron elastic scattering cross section taken from the NIST database, and the stopping power derived from the full Penn algorithm. The results of the two schemes agree well with each other and can be used to quantitatively evaluate the shielding effect of a thin coated metal layer on incident electrons for a diamond amplified photocathode.

Excitation of the 2S State of Atomic Hydrogen by Electron Impact

The excitation cross sections of the 2S state of atomic hydrogen at 10 low incident electron energies (10.30 and 54.5 eV) have been calculated using the variational polarized method. Nine partial waves are used to get convergence of cross sections in the above energy range. The maximum of the cross section is 0.137 π a 0 2 at 11.14 eV which is close to the experimental result 0.163 ± 0.2 π a 0 2 at 11.6 ± 0.2 eV. The present results are compared with other calculations, many of them are based on the close-coupling approximation, including the R-matrix method. Differential cross sections at 13.6 eV incident energy have also been calculated. Spin-flip cross sections have been calculated and compared with those obtained using the close-coupling approximation.

Considerable knock-on displacement of metal atoms under a low energy electron beam

Under electron beam irradiation, knock-on atomic displacement is commonly thought to occur only when the incident electron energy is above the incident-energy threshold of the material in question. However, we report that when exposed to intense electrons at room temperature at a low incident energy of 30 keV, which is far below the theoretically predicted incident-energy threshold of zirconium, Zircaloy-4 (Zr-1.50Sn-0.25Fe-0.15Cr (wt.%)) surfaces can undergo considerable displacement damage. We demonstrate that electron beam irradiation of the bulk Zircaloy-4 surface resulted in a striking radiation effect that nanoscale precipitates within the surface layer gradually emerged and became clearly visible with increasing the irradiation time. Our transmission electron microscope (TEM) observations further reveal that electron beam irradiation of the thin-film Zircaly-4 surface caused the sputtering of surface α-Zr atoms, the nanoscale atomic restructuring in the α-Zr matrix, and the amorphization of precipitates. These results are the first direct evidences suggesting that displacement of metal atoms can be induced by a low incident electron energy below threshold. The presented way to irradiate may be extended to other materials aiming at producing appealing properties for applications in fields of nanotechnology, surface technology, and others.

High Spatial Resolution EDS Mapping of Nanoparticles at Low Accelerating Voltage

Abstract In conventional energy-dispersive spectroscopy/scanning-electron microscopy (EDS/SEM) analysis, the pear-shaped interaction volume of incident electrons in the bulk sample determines spatial resolution and the actual scope of EDS analysis is usually a few cubic microns. Lowering the accelerating voltage can reduce effectively the interaction volume of the electron beam. In this study, Monte Carlo (MC) simulation was used to analyze effectively the actual interaction between low-energy incident electrons and nanoparticles. MC x ray, a new Monte Carlo program, was used to further simulate EDS mapping of Ni nanoparticles on the top of an Al2O3 matrix at an accelerating voltage of 3 kV, and the theoretical spatial resolution was calculated to be approximately 10 nm. In addition, EDS mapping images of 17-nm Ni nanoparticles were successfully acquired at high spatial resolution similar to the theoretical value by adjusting the operating conditions for SEM-EDS analysis, including the use of immersion objective lens, the removal of electron trap and collimator, and the reduction of working distance as well as detector distance.

Characterization of Amorphous Oxide Nano-Thick Layers on 316L Stainless Steel by Electron Channeling Contrast Imaging and Electron Backscatter Diffraction.

Characterization of the topmost surface of biomaterials is crucial to understanding their properties and interactions with the local environment. In this study, the oxide layer microstructure of plasma-modified 316L stainless steel (SS316L) samples was analyzed by a combination of electron backscatter diffraction and electron channeling contrast imaging using low-energy incident electrons. Both techniques allowed clear identification of a nano-thick amorphous oxide layer, on top of the polycrystalline substrate, for the plasma-modified samples. A methodology was developed using Monte Carlo simulations combined with the experimental results to estimate thickness of the amorphous layer for different surface conditions. X-ray photoelectron spectroscopy depth profiles were used to validate these estimations.

Serial Block Face Sem of Biological Structures at Near Isotropic Spatial Resolution using Multiple Beam Energies and Monte Carlo Simulations

Serial block face scanning electron microscopy (SBF-SEM) provides nanoscale 3D ultrastructure of entire cells and tissue volumes. In SBF-SEM, an ultramicrotome built into the SEM specimen stage successively removes thin sections from a plastic-embedded, heavy metal-stained specimen. After each cut, the freshly exposed block face is imaged at a low incident electron energy using a backscattered electron detector to provide 3D ultrastructure with a resolution of approximately 5 nm in the plane of the block face and around 25 nm in the perpendicular z-direction, as limited by the slice thickness. We have explored the feasibility of improving the z-resolution in SBF-SEM by recording images at multiple primary beam energies, thus sampling different depths below the block surface.A linear relationship was found between the depth of test structures, generated by Monte Carlo simulations, and the ratio of backscattered image intensities recorded at primary beam energies between 1.4 keV and 6.8 keV. This enabled us to reconstruct the 3D model within a 25-nm surface layer at a z-resolution of around 5 nm. We used a Zeiss Sigma-VP SEM equipped with a Gatan 3View SBF system to acquire 3D data from a specimen consisting of gold spheres embedded in carbon. Experiments were also performed on embedded blocks of stained biological tissues.Although damage of the block under electron irradiation limits the signal to noise ratio, the use of multiple primary beam energies, coupled with a physics-based Monte Carlo model, provides the possibility of obtaining cellular ultrastructure at nearly isotropic 3D spatial resolution.

Measurements of low-energy electron reflection at a plasma boundary

It is demonstrated that low-energy (<3 eV) electron reflection from a solid surface in contact with a low-temperature plasma can have significant variation with time. An uncontaminated, i.e., “clean,” metallic surface (just after heating up to glow) in a plasma environment may have practically no reflection of low-energy incident electrons. However, a contaminated, i.e., “dirty,” surface (in some time after cleaning by heating) that has a few monolayers of absorbent can reflect low-energy incident electrons and therefore significantly affect the net electron current collected by the surface. This effect may significantly change plasma properties and should be taken into account in plasma experiments and models. A diagnostic method is demonstrated for measurements of low-energy electron absorption coefficient in plasmas with a mono-energetic electron group.

Incident electron energy influence on energy positions and forms of the 3s3p6np autoionising states of Ar

SynopsisEjected electron spectra of Ar have been studied with high resolution at incident electron energies of 41.2 and 505 eV and at the constant ejection angle of 90o. The study was focused on the 3s3p6np states and their behaviour at low and high incident electron energies.

Differential cross sections for electron-impact vibrational-excitation of tetrahydrofuran at intermediate impact energies.

We report differential cross sections (DCSs) for electron-impact vibrational-excitation of tetrahydrofuran, at intermediate incident electron energies (15-50 eV) and over the 10°-90° scattered electron angular range. These measurements extend the available DCS data for vibrational excitation for this species, which have previously been obtained at lower incident electron energies (≤20 eV). Where possible, our data are compared to the earlier measurements in the overlapping energy ranges. Here, quite good agreement was generally observed where the measurements overlapped.

Sub-Surface Serial Block Face Scanning Electron Microscopy

Serial block face scanning electron microscopy (SBF-SEM) provides nanoscale 3D ultrastructure of tissue samples up to several hundred micrometers in size. In SBF-SEM, an ultramicrotome built into the SEM specimen stage successively removes thin sections from a plastic-embedded, heavy metal-stained specimen. After each cut, the freshly exposed block face is imaged at a low incident electron energy using the backscattered electron signal, which is sensitive to heavy atoms in the sample. Although the x-y resolution in the plane of the block face is approximately 5 nm, the resolution along the z-axis in SBF-SEM is limited by the minimum slice thickness of around 25 nm. We have explored the feasibility of improving the z-resolution in SBF-SEM by recording images at more than one primary beam energy, thus sampling different depths below the block surface. We used Monte Carlo simulations of SEM images from an epoxy block containing 5-nm diameter carbon spheres stained with 14% osmium positioned at different depths, as a model for small biological structures. A linear relationship was found between the depth of the spheres and the ratio of backscattered signals at primary beam energies of 1.4 keV and 6.8 keV, which allowed us to generate 3D tomograms with a depth resolution of around 5 nm. Experiments are in progress to test this technique using a Zeiss Sigma-VP SEM equipped with a Gatan 3View SBF system. Sub-surface SBF-SEM could potentially match focused ion beam (FIB) SEM in terms of z-resolution, but with the added advantage of providing higher throughput and larger tissue volumes. The research was supported by the intramural program of NIBIB.