Low-impedance System Research Articles

The right ventricle: anatomy, physiology and functional assessment

Right ventricular function is acknowledged as an important prognostic element in cardiovascular pathologies.Although recent years have seen significant advances in the exploration of cardiac function, assessing right ventricular performance still remains a challenge for the daily practice.The right ventricle is a complex structure that cannot be approximated by a simple geometric form. It functions in a low impedance system therefore it is sensitive to pressure overload. Along with contractility and loading conditions, ventricular interactions play an important part in right ventricular function and failure.The aims of our review are to describe the main characteristics of RV anatomy, function and failure and also to present the standard and novel tools that can be employed to investigate them. Moreover, the advantages, limitations and clinical significance of each parameter will be discussed.

Low-impedance plasma systems for generation of high-current low-energy electron beams

The results of experimental investigation and numerical modeling of the generation of low-energy (tens of keV) high-current (up to tens of kA) electron beams in a low-impedance system consisting of a plasma-filled diode with a long plasma anode, an auxiliary hot cathode, and an explosive emission cathode. The low-current low-voltage beam from the auxiliary cathode in an external longitudinal magnetic field is used to produce a long plasma anode, which is simultaneously the channel of beam transportation by residual gas ionization. The high-current electron beam is formed from the explosive emission cathode placed in the preliminarily formed plasma. Numerical modeling is performed using the KARAT PIC code.

Losses at magnetic nulls in pulsed-power transmission line systems

Pulsed-power systems operating in the terawatt regime must deal with large electron flows in vacuum transmission lines. In most parts of these transmission lines the electrons are constrained by the self-magnetic field to flow parallel to the conductors. In very low impedance systems, such as those used to drive Z-pinch radiation sources, the currents from multiple transmission lines are added together. This addition necessarily involves magnetic nulls that connect the positive and negative electrodes. The resultant local loss of magnetic insulation results in electron losses at the anode in the vicinity of the nulls. The lost current due to the magnetic null might or might not be appreciable. In some cases the lost current due to the null is not large, but is spatially localized, and may create a gas and plasma release from the anode that can lead to an excessive loss, and possibly to catastrophic damage to the hardware. In this paper we describe an analytic model that uses one geometric parameter (aside from straightforward hardware size measurements) that determines the loss to the anode, and the extent of the loss region when the driving source and load are known. The parameter can be calculated in terms of the magnetic field in the region of the null calculated when no electron flow is present. The model is compared to some experimental data, and to simulations of several different hardware geometries, including some cases with multiple nulls, and unbalanced feeds.

Vector S-parameter measurements of the superconducting vortex flow transistor

Vector S-parameter measurements of the superconducting vortex flow transistor (VFT) are presented. The measurements were obtained for frequencies up to 100 MHz on VFTs that had a calculated transmit-time cutoff frequency of 5 GHz. An equivalent circuit model that includes calculations of the VFT transresistance, input inductance, and feedthrough capacitance is derived from these measurements. The measurements are limited to an upper frequency of 100 MHz due to crosstalk in the low-impedance system.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Analysis of the inductance influence on the measured electrochemical impedance

The high-frequency region of the impedance diagram of an electrochemical cell can be deformed by the inductance of the wiring and/or by the intrinsic inductance of the measuring cell. This effect can be noticeable even in the middle frequency range in the case of low impedance systems such as electrochemical power sources. A theoretical analysis of the errors due to inductance effects is presented here, on the basis of which the admissible limiting measuring frequency can be evaluated. Topology deformations due to the effect of inductance in the case of a single-step electrochemical reaction are studied by the simulation approach. It is shown that an inductance can not only change the actual values of the parameters (electrolytic resistance, double layer capacitance, reaction resistance), but can also substantially alter the shape of the impedance diagram, this leading to erroneous structure interpretations. The effect of the size and surface area of the electrode on its intrinsic inductance is also evaluated.

Bistable light-detection devices

The effect of optical feedback in light-amplifier radiation detectors is discussed, with spectral reference to bistable operation. High- and low-impedance systems are considered and the operating characteristics of a number of such detectors are presented.