This study applied a vapor cooling condensation system for depositing p-ZnO:LiNO3, i-Ga2O3, and n-Ga2O3:Si layers on sapphire substrates to fabricate solar-blind p-i-n deep-ultraviolet photodetectors (DUV-PDs). The deposited i-Ga2O3 absorption layer was measured to exhibit high performance levels. Therefore, when the resulting solar-blind p-i-n DUV-PDs were operated at a reverse bias voltage of â 5 V, the dark current and the DUV (250 nm)/visible (500 nm) rejection ratio were 1.45 pA and 2.5 Ă 104, respectively. Moreover, when the solar-blind p-i-n DUV-PDs were operated at a reverse bias voltage of â 5 V, the photoresponsivity, noise power density, noise equivalent power, and specific detectivity were 0.73 A/W, 2.45 Ă 10â26 A2/Hz, 4.80 Ă 10â13 W, and 1.97 Ă 1012 cmHz0.5Wâ1, respectively. Furthermore, flicker noise was the dominant low-frequency noise source in the photodetectors. These results demonstrated the effectiveness of the proposed solar-blind p-i-n DUV-PDs.
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