Low-frequency Phonons Research Articles

Thermoelectric performance of Ag2GeX3 (X = S, Se, Te) with intrinsically low lattice thermal conductivity: A first principles study

Low lattice thermal conductivity is one of the key factor for excellent thermoelectric performance of materials. In this work, we have systematically studied the thermoelectric properties of Ag2GeX3 (X = S, Se, Te) by first-principles calculations in combination with Boltzmann transport theory. In terms of phonon transmission performance, due to the low frequency of acoustic phonons, strong coupling between low-frequency optical phonons and acoustic phonons, and relatively strong anharmonicity, Ag2GeX3 (X = S, Se, Te) exhibits extremely low lattice thermal conductivity of 0.30 Wm−1K−1, 0.28 Wm−1K−1 and 0.65 Wm−1K−1 at room temperature, respectively. At the same time, Ag2GeX3 (X = S, Se, Te) also exhibits good electrical transport performance. The appropriate band gap and high slope of electronic density of states (DOS) near the Fermi level result in a large Seebeck coefficient of the materials. As a result, the optimal ZT values of p(n)-type Ag2GeX3 (X = S, Se, Te) are 1.4(1.2), 2.2(0.7), and 0.9(0.7) at 800 K, respectively. These results demonstrate outstanding thermoelectric performance of Ag2GeSe3 for energy conversion applications.

First-principles study of two-dimensional transition metal carbide M n+1 C n O2 (M = Nb,Ta)

In the present work, the three stable MXenes M n+1 C n O2 (M = Nb,Ta) are explored based on first-principles calculations. These materials are important derivatives of 2D materials and exhibit distinctive properties, holding vast potential in nanodevices. All these M n+1 C n O2 (M = Nb,Ta) materials exhibit outstanding superconducting performance, with corresponding superconducting transition temperatures of 23.00 K, 25.00 K, and 29.00 K. Analysis reveals that the high superconducting transition temperatures of MXenes M n+1 C n O2 (M = Nb,Ta) are closely associated with the high value of the logarithmic average of phonon frequencies, ωlog , and the strong electron–phonon coupling, attributed to the crucial contribution of low-frequency phonons. Additionally, we applied strain treatments of 2% and 4% to M n+1 C n O2 (M = Nb,Ta), resulting in varying changes in superconducting transition temperatures under different strains.

Thermal Transport Properties of Two-Dimensional Janus MoXSiN2 (X = S, Se, and Te).

The design of Janus materials offers an effective means of regulating both their physical and chemical properties, leading to their application in various fields. However, the underlying mechanism governing the modulation of the thermal transport characteristics through the construction of Janus materials remains unclear. In this work, we introduce VI-group elements into the MoSi2N4 structure, yielding two-dimensional Janus MoXSiN2 (X = S, Se, and Te) and systematically investigate their thermal transport properties based on first-principles calculation methods. Our findings reveal that the lattice thermal conductivities (κl) of MoSSiN2, MoSeSiN2, and MoTeSiN2 are 47.2, 24.3, and 40.6 W/mK at 300 K, respectively, significantly lower than that of MoSi2N4 (224 W/mK). Such low κl values mainly come from the introduction of X atoms, which enhances phonon scattering and reduces phonon vibration frequencies. In addition, MoTeSiN2 exhibits a higher κl compared to MoSeSiN2, contrary to the trend observed in most materials containing VI-group elements, where κl decreases gradually from S to Te. This anomalous behavior can be attributed to the competitive result between its lower phonon vibrational frequency and weaker phonon anharmonicity of MoTeSiN2. This work elucidates the inherent mechanism governing the modulation of thermal transport properties in Janus materials, thereby enhancing the potential application of Janus MoXSiN2 in engineering thermal management.

Superconductivity and Pronounced Electron‐Phonon Coupling in Rock‐Salt Al1−xO1−x and Ti1−xO1−x

AbstractThe highest ambient‐pressure Tc among binary compounds is 40 K (MgB2). Higher Tc is achieved in high‐pressure hydrides or multielement cuprates. Alternatively, are explored superconducting properties of binary, metastable sub‐oxides, that may emerge under extremely low oxygen partial pressure. The emphasis is on the rock‐salt structure, which is known to promote superconductivity, and exploring AlO, ScO, TiO, and NbO. Dynamic lattice stability is achieved by introducing metal and oxygen vacancies in the fashion of Nb1−xO1−x‐type structure (x = ¼). The electron‐phonon (e‐ph) coupling is remarkably large in Al1−xO1−x and Ti1−xO1−x (λ ≈ 2 at x = ¼), with Tc ≈ 35 K according to the Allen–Dynes equation. Significantly, the coupling strength is comparable to that in high‐pressure hydrides, yet, in contrast to hydrides and MgB2, the coupling is largely driven by low frequency phonons. Sc1−xO1−x and Nb1−xO1−x show significantly smaller λ and Tc. Further, hydrogen intercalation to boost λ and Tc is investigated. Only Ti1−x(O1−xHx) and Nb1−x(O1−xHx) are dynamically stable upon intercalation, where H, respectively, decreases and increases Tc. The effect of H doping on electronic structure and Tc is discussed. Altogether, the study suggests that metal sub‐oxides are promising compounds to achieve strong e‐ph coupling at ambient pressure.

Simultaneous optimization of power factor and thermal conductivity via charge transfer effect and enhanced scattering of phonons in Si80Ge20P1/CoSi2 composites

SiGe based alloy is a promising medium-high temperature thermoelectric material that has been applied in the field of aerospace exploration. So far, utilizing the second phase to promote the scattering of phonons is a common way to improve the thermoelectric performance of SiGe based alloy, but this often deteriorates the electrical properties. In this study, the Si80Ge20P1/CoSi2 composites have been prepared by mechanical alloying and spark plasma sintering, and the content of cobalt silicide (CoSi2) nanoparticles have been manipulated. Since the CoSi2 nanoparticles possess higher carrier concentration and smaller work function than the Si80Ge20P1 matrix, the carrier concentrations of composites have been pushed up due the charge transfer effect. Meanwhile, the formation of nano-sized phase interfaces and stacking faults in the composites has enhanced the scattering of low-frequency phonons. As a result, the optimal power factor of 3.41 mW⋅m−1⋅K−2 and thermal conductivity of 2.29 W⋅m−1⋅K−1 have been achieved, and the corresponding zT reaches up to 1.3 in the Si80Ge20P1+0.5% CoSi2 (in mole) composite at 873 K. This work provides a new idea for developing the performance of SiGe based alloy.

GaInX3 (X = S, Se, Te): Ultra-low thermal conductivity and excellent thermoelectric performance

Abstract Seeking intrinsically low thermal conductivity materials is a viable strategy in the pursuit of high-performance thermoelectric materials. Here, by using first-principles calculations and semiclassical Boltzmann transport theory, we systemically investigate the carrier transport and thermoelectric properties of monolayer Janus GaInX3 (X = S; Se; Te). It is found that the lattice thermal conductivities can reach values as low as 3.07 Wm−1K−1, 1.16 Wm−1K−1 and 0.57 Wm−1K−1 for GaInS3, GaInSe3, and GaInTe3, respectively, at room temperature. These notably low thermal conductivity is attributed to strong acoustic-optical phonon coupling caused by the presence of low-frequency optical phonons in GaInX3 materials. Furthermore, by integrating the characteristics of electronic and thermal transport, the dimensionless figure of merit ZT can reach maximum values of 0.95, 2.37, and 3.00 for GaInS3, GaInSe3, and GaInTe3, respectively. Our results suggest monolayer Janus GaInX3 (X = S; Se; Te) are promising candidates for thermoelectric and heat management applications.

Influence of Lifshitz Transition on the Intrinsic Resistivity of Cu2N Monolayer.

The Lifshitz transition (LT), a topological structure transition of Fermi surfaces, can induce various intricate physical properties in metallic materials. In this study, through first-principles calculations, we explore the nontrivial effect of the LT on the intrinsic resistivity of the Cu2N monolayer arising from electron-phonon (el-ph) scattering. We find that when the LT is induced by electron doping, the multibranch Fermi surface simplifies into a single-band profile. Such an LT leads to a decoupling of low-frequency flexural phonons from el-ph scattering due to mirror symmetry. Consequently, the resistivity of the Cu2N monolayer at room temperature significantly decreases, approaching that of slightly doped graphene, and highlighting the Cu2N monolayer as a highly conductive two-dimensional metal. Moreover, this LT can bring about a nonlinear temperature dependence of the intrinsic resistivity at a high temperature.

Localized Phonon Transport Study of GaN/SiO2 Core/shell Nanowires under Thermal-Stress Coupling.

In order to comprehensively explore the intricate mechanisms of thermo-mechanical interactions, this study employs the molecular dynamics method to investigate the influence of heat flux density, shell thickness and length, as well as stress on the radial interface phonon transport in GaN/SiO2 core/shell nanowire. Additionally, the surface eigenmode decomposition method is employed to analyze the interface phonon dispersion curves. The investigation reveals that with increasing heat flux density, internal thermal stresses intensify, leading to a complex distribution of thermal stresses within the system. Under the influence of thermal stress, the nonlinear acoustic properties interact with phonon scattering, resulting in the pronounced localization of interface phonons. Compressive stress causes an upshift in low-frequency phonons, while tensile stress induces a downward shift in the high-frequency optical branches at the interface. The localized phonon vibrations at the SiO2/GaN interface under nonuniform stress are identified as the primary cause for the abundant presence of nondispersive phonon modes at the radial interface. By elucidating the subtle interplay between lattice vibrations and stress fields, this study offers a novel and profound understanding of thermo-mechanical coupling effects, thereby providing innovative theoretical foundations for the design and performance management of thermoelectric devices.

Thermoelectric performance enhancement of Pb-doped α -MgAgSb near room temperature

α-MgAgSb is taken as the p-type leg material for recently focused Mg-based thermoelectric devices because of the high thermoelectric performance near room temperature. However, the thermoelectric performance of α-MgAgSb is inhibited by the existence of the Ag-rich second phase. The ordinary methods like carrier concentration optimization and minimizing lattice thermal conductivity were nearly invalid because of the extremely low doping level for heteroatoms and intrinsically low lattice thermal conductivity. The crystal structure of α-MgAgSb can be viewed as Ag atom filled in half distorted hexahedron in the distorted rock salt skeleton formed by the Mg–Sb sublattice. In this work, by replacing the smaller Mg in the sublattice with Pb, the volume of the distorted hexahedron is effectively expanded to accommodate Ag atoms and then lead to the re-dissolution of Ag-rich second phase in the matrix. In addition, as Ag is the main source of low-frequency phonons, the enhanced lattice anharmonicity by Pb doping leads to stronger scattering of phonons in the distorted hexahedron and results in 20% reduction of lattice thermal conductivity in the temperature range of 300–500 K. Finally, the figure of merit zT is enhanced by ∼40% in the whole temperature range, demonstrating that lattice management is a promising method for the optimization of α-MgAgSb materials.

Extrapolation of polaron properties to low phonon frequencies by Bayesian machine learning

Extrapolation of polaron properties to low phonon frequencies by Bayesian machine learning

Enhancing Thermoelectric Performance of n-Type Bi2Te2.7Se0.3 through Incorporation of Amorphous Si3N4 Nanoparticles.

Bi2Te3-based thermoelectric (TE) materials are the state-of-the-art compounds for commercial applications near room temperature. Nevertheless, the application of the n-type Bi2Te2.7Se0.3 (BTS) is restricted by the comparatively low figure of merit (ZT) and intrinsic embrittlement. Here, we show that through dispersion of amorphous Si3N4 (a-Si3N4) nanoparticles both 14% increase in power factor (at 300 K) and 48% decrease in lattice thermal conductivity are simultaneously realized. The increased power factor comes from enhanced thermopower and reduced electrical resistivity while the reduced lattice thermal conductivity originates mainly from scattering of middle- and low-frequency phonons at the incorporated a-Si3N4 nanoparticles. As a result, a large ZTmax = 1.19 (at 373 K) and an average ZTave ∼ 1.12 (300-473 K) with better mechanical properties are achieved for the BTS/0.25 wt % Si3N4 sample. Present results demonstrate that the incorporation of a-Si3N4 is a promising way to improve TE performance.

Tuning Thermal Conductivity of Hybrid Perovskites through Halide Alloying.

Tuning the thermal transport properties of hybrid halide perovskites is critical for their applications in optoelectronics, thermoelectrics, and photovoltaics. Here, an effective strategy is demonstrated to modulate the thermal transport property of hybrid perovskites by halide alloying. A highly tunable thermal conductivity of mixed-halide hybrid perovskites is achieved due to halide-alloying and structural distortion. The experimental measurements show that the room temperature thermal conductivity of MAPb(BrxI1- x)3 (x = 0─1) can be largely modulated from 0.27 ± 0.07W m-1 K-1 (x = 0.5) to 0.47 ± 0.09W m-1 K-1 (x = 1). Molecular dynamics simulations further demonstrate that the thermal conductivity reduction of hybrid halide perovskites results from the suppression of the mean free paths of the low-frequency acoustic and optical phonons. It is found that halide alloying and the induced structural distortion can largely increase the scatterings of optical and acoustic phonons, respectively. The confined diffusion of MA+ cations in the octahedra cage is found to act as an additional thermal transport channel in hybrid perovskites and can contribute around 10-20% of the total thermal conductivity. The findings provide a strategy for tailoring the thermal transport in hybrid halide perovskites, which may largely benefit their related applications.

Wettability-dependent thermal transport at the Fe nanoparticle-water interface: Molecular dynamics simulations

Nanoparticles are pivotal in applications such as solar thermal utilization, drug delivery, and water treatment. However, the microscopic mechanisms of heat transfer between nanoparticles and water, especially considering wettability effects, remain poorly understood. This study aims to investigate the interfacial heat transport properties of Fe nanoparticles-water using molecular dynamics simulations with varying levels of wettability. And the results indicate that the thermal conductance at the interface between Fe nanoparticles and water is 97.9 × 108 W/m2 K. The study also reveals an oscillatory pattern in the water density near the Fe nanoparticle interface, resulting in a distinct “double-density peak” With increased wettability, this peak density consistently grows, while the thickness of the adjacent solid-like layer remains relatively unchanged. Through the analysis of the vibrational density of states at the interface, the study reveals the microscopic mechanism by which wettability affects the thermal conductance of the Fe nanoparticles-water interface. Enhanced wettability improves the coupling of low-frequency phonon modes across the solid-liquid boundary, increasing thermal energy transfer efficiency. The study further identifies that low-frequency transverse modes play a vital role in heat transfer at the interface. Consequently, these insights provide a valuable theoretical framework for comprehending heat transport mechanisms at soft-hard interfaces.

High Thermoelectric Performance of n-type BiTeSe-Based Composites Incorporated with Both Inorganic and Organic Nanoinclusions.

N-type Bi2Te2.7Se0.3 (BTS) alloy has relatively low thermoelectric performance as compared to its p-type counterpart, which restricts its widespread applications. Herein, we designed and prepared a novel composite system, which consists of an n-type BTS matrix incorporated with both inorganic and organic nanoinclusions. The results indicate that the thermopower of the composite samples can be enhanced by more than 19% upon incorporating inorganic nanophase AgBi3S5 (ABS) due to the energy-dependent carrier scattering, which ensures a high power factor. On the other hand, further incorporation of organic nanophase polypyrrole (PPy) can drastically reduce its lattice thermal conductivity owing to the strong scattering of mid- and low-frequency phonons at these nanoinclusions. As a result, high figures of merit ZTmax = 1.3 at 348 K and ZTave = 1.17 (300-500 K) are achieved with improved mechanical properties in BTS-based composites incorporated with 1.5 wt % ABS and 0.5 wt % PPy, demonstrating that the incorporation of both inorganic and organic nanoinclusions is an effective way to improve its thermoelectric performance.

Effect of bundling on phonon transport in single-walled carbon nanotubes

Thermally conductive bulk materials composed of single-walled carbon nanotubes (SWCNTs), such as fibers and mats, are characterized by a complex network formed by entangled SWCNTs. The fundamental unit of this network is a bundle, in which SWCNTs are assembled through weak van der Waals interactions. Although the thermal conductivity of a bundle is conventionally described as the sum of the heat conduction in the constituent SWCNTs, recent experiments have demonstrated that bundling may reduce the high thermal conductivity of SWCNTs, which is counterintuitive considering the weak interactions between SWCNTs in a bundle. Herein, by performing spectral phonon transport analysis for bundles of SWCNTs with radii of approximately 3.4 Å, we explore the effect of the bundle size and chiral configuration on phonon transport in bundles. Results show that although the heat conduction properties of individual SWCNTs are maintained for bundles with a length of less than 1 μm around room temperature in both the ballistic and quasi-ballistic regimes, intertube interactions between constituent SWCNTs coupled with their structural low dimensionality may yield additional thermal resistance. In particular, the thermal conductivity of a bundle decreases when low-frequency phonons influenced by intertube interactions substantially contribute to the overall heat conduction, namely, either at low temperatures or for long bundles. Although the observed additional thermal resistance cannot fully explain the experimental results of reduced thermal conductivity, our findings on the effect of bundling can advance the understanding of thermal transport in bundles and the thermal management of SWCNT bulk materials.

Ultralow Thermal Conductivity of a Chalcogenide System Pt3Bi4Q9 (Q = S, Se) Driven by the Hierarchy of Rigid [Pt6Q12]12- Clusters Embedded in Soft Bi-Q Sublattice.

Knowledge of structure-property relationships in solids with intrinsic low thermal conductivity is crucial for fields such as thermoelectrics, thermal barrier coatings, and refractories. Herein, we propose a new "rigidness in softness" structural scheme for intrinsic low lattice thermal conductivity (κL), which embeds rigid clusters into the soft matrix to induce large lattice anharmonicity, and accordingly discover a new series of chalcogenides Pt3Bi4Q9 (Q = S, Se). Pt3Bi4S9-xSex (x = 3, 6) achieved an intrinsic ultralow κL down to 0.39 W/(m K) at 773 K, which is considerably low among the Bi chalcogenide thermoelectric materials. Pt3Bi4Q9 contains the rigid cubic [Pt6Q12]12- clusters embedded in the soft Bi-Q sublattice, involving multiple bonding interactions and vibration hierarchy. The hierarchical structure yields a large lattice anharmonicity with high Grüneisen parameters (γ) 1.97 of Pt3Bi4Q9, as verified by the effective scatter of low-lying optical phonons toward heat-carrying acoustic phonons. Consequently, the rigid-soft coupling significantly inhibits heat propagation, exhibiting low acoustic phonon frequencies (∼25 cm-1) and Debye temperatures (ΘD = 170.4 K) in Pt3Bi4Se9. Owing to the suppressed κL and considerable power factor (PF), the ZT value of Pt3Bi4S6Se3 can reach 0.56 at 773 K without heavy carrier doping, which is competitive among the pristine Bi chalcogenides. Theoretical calculations predicted a large potential for performance improvement via proper doping, indicating the great potential of this structure type for promising thermoelectric materials.

Thermal transport characterization of monolayer GaN nanoribbon doped with group IV materials: An equilibrium molecular dynamics study

Bulk gallium nitride (GaN) has been considered as one of the prominent materials for a long time in the application of laser, LED and transistors. Due to its superior electrical characteristics, its low-dimensional hexagonal counterpart is currently drawing attention like graphene. In this study, we have investigated the effect of impurity atoms on the heat energy conduction within this honeycomb nanostructure of GaN to explore its scope of applications. The room temperature thermal conductivity of zigzag GaN nanoribbon (ZGaNNR) is found to be ∼ 11 Wm−1K−1 using the molecular dynamics approach with the Green-Kubo formulation. Various group IV elements namely- carbon, silicon, germanium and tin, have been incorporated within the pristine structure in four distinct doping patterns; like- point (Type-I and Type-II), pair and delta doping, to explore the thermal transport in chemically doped nanostructures. A gradual enhancement in the thermal conductivity is observed for the increasing concentration of carbon and silicon as dopants. On the other hand, selection of germanium and tin as impurity atoms suppresses the heat conduction within the crystal due to the increased low frequency phonon scattering. In all cases, Type-I point doping affects the thermal transport of ZGaNNR significantly. The narrower ribbons impede the phonon transportation due to the strong boundary effects resulting in a lower thermal conductivity. Moreover, phonon transportation is largely suppressed, and heat energy is observed to flow at a slower rate as the temperature of the ribbon rises. We have also studied these doped structures under the influence of point, edge and pair vacancies and observed a decreasing trend in thermal conductivity for each type of vacancy defect patterns introduced in the crystal. Such a study would promote the rising interest in properly characterizing the heat transport of low dimensional nanostructures and it can be an effective technique to tune the thermal conductivity of ZGaNNR for improving thermoelectric performance and thermal management in nanoscale devices.

Thermal transports of 2D phosphorous carbides by machine learning molecular dynamics simulations

Carbon phosphide is a newly discovered two-dimensional semiconductor material which wrinkles and has a significant carrier mobility. Due to lack an accurate force field, the use of molecular dynamics to study its phonon-dominated thermal conductivity which lead to inaccurate results. At present, the use of machine learning to construct a high-precision force field has become the mainstream research method to solve this problem. The main work of this study is to construct a comprehensive training sets for Phosphorus-Doped Graphene (PCn) (n = 3, 5, 6) and to use the fitted potential to calculate the related thermal properties. The research found that (PC5) exhibited anisotropic behavior, with a thermal conductivity of 106.6 Wm−1K−1 in the y-direction and 63.6 Wm−1K−1 in the x-direction. In comparison, (PC6) and (PC3) showed isotropic behavior, with thermal conductivity of approximately 104 Wm−1K−1 and 76.83 Wm−1K−1, respectively. Compared to monolayer graphene, the lower thermal conductivity of PCn is mainly attributed to phonon-phonon scattering effects, which are limited by the regular wrinkled structure. Additionally, low-frequency phonon have been found to have a significant impact on the thermal performance of PCn. Furthermore, we investigated the influence of uniaxial strain on the PC6 and observed an increase in the thermal conductivity with increasing strain. This study used key computational and analytical techniques, including phonon dispersion relations, homogeneous nonequilibrium molecular dynamics method, spectral thermal conductivity analysis. These findings provide a theoretical basis for understanding the thermal transport properties of PCn and will guide its potential applications value.

Giant Negative Thermal Expansion in Ultralight NaB(CN)4.

Negative thermal expansion (NTE) is crucial for controlling the thermomechanical properties of functional materials, albeit being relatively rare. This study reports a giant NTE (αV ∼-9.2 ⋅ 10-5 K-1 , 100-200 K; αV ∼-3.7 ⋅ 10-5 K-1 , 200-650 K) observed in NaB(CN)4 , showcasing interesting ultralight properties. A comprehensive investigation involving synchrotron X-ray diffraction, Raman spectroscopy, and first-principles calculations has been conducted to explore the thermal expansion mechanism. The findings indicate that the low-frequency phonon modes play a primary role in NTE, and non-rigid vibration modes with most negative Grüneisen parameters are the key contributing factor to the giant NTE observed in NaB(CN)4 . This work presents a new material with giant NTE and ultralight mass density, providing insights for the understanding and design of novel NTE materials.

Highly tailorable thermomechanical properties of nanograined silicon: Importance of grain size and grain anisotropy

Nanocrystalline silicon can have unique thermal transport and mechanical properties governed by its constituent grain microstructure. Here, we use phonon ray-tracing and molecular dynamics simulations to demonstrate the largely tunable thermomechanical behaviors with varying grain sizes (a0) and aspect ratios (ξ). Our work shows that, by selectively increasing the grain size along the heat transfer direction while keeping the grain area constant, the in-plane lattice thermal conductivity (kx) increases more significantly than the cross-plane lattice thermal conductivity (ky) due to anisotropic phonon–grain boundary scattering. While kx generally increases with increasing ξ, a critical value exists for ξ at which kx reaches its maximum. Beyond this transition point, further increases in ξ result in a decrease in kx due to substantial scattering of low-frequency phonons with anisotropic grain boundaries. Moreover, we observe reductions in the elastic and shear modulus with decreasing grain size, and this lattice softening leads to significant reductions in phonon group velocity and thermal conductivity. By considering both thermal and mechanical size effects, we identify two distinct regimes of thermal transport, in which anisotropic phonon–grain boundary scattering becomes more appreciable at low temperatures and lattice softening becomes more pronounced at high temperatures. Through phonon spectral analysis, we attribute the significant thermal conductivity anisotropy in nanograined silicon to grain boundary scattering of low-frequency phonons and the softening-driven thermal conductivity reduction to Umklapp scattering of high-frequency phonons. These findings offer insights into the manipulation of thermomechanical properties of nanocrystalline silicon via microstructure engineering, carrying profound implications for the development of future nanomaterials.