Low-frequency Noise Research Articles

Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors

AlGaN/GaN high election mobility transistor (HEMT) has important application prospects in satellite communication, radar, nuclear reactors and other extreme environments, owing to its excellent electrical performance and strong radiation resistance. Heavy ion radiation mainly causes single-event effect and displacement damage effect in AlGaN/GaN HEMT device. In this work, the displacement damage defects introduced by heavy ion radiation are analyzed in detail. With the increase of heavy ion radiation influence, more defects are introduced by displacement damage. These defects reduce the two-dimensional electron gas (2DEG) concentration through carrier capture and removal effect, and reduce the carrier mobility through scattering mechanism, resulting in gradual degradation of the electrical characteristics of the device. In this work, AlGaN/GaN high electron mobility transistors are irradiated by <sup>181</sup>Ta<sup>32+</sup> ions with fluences of 1×10<sup>8</sup> ions/cm<sup>2</sup>, 1×10<sup>9</sup> ions/cm<sup>2</sup> and 1×10<sup>10</sup> ions/cm<sup>2</sup>. The electrical characteristics, EMMI and low-frequency noise characteristics of the device before and after heavy ion radiation are measured. The results show that heavy ion radiation can lead to the degradation of electrical parameters. When the heavy ion radiation dose reaches 1×10<sup>10</sup> ions/cm<sup>2</sup>, the electrical characteristics of the device deteriorate seriously, the threshold voltage shifts forward by 25%, and the drain saturation current deteriorates obviously. The defect locations introduced by irradiation are analyzed by EMMI test, and it is found that the number of “hot spots” increases significantly after the having been irradiated by heavy ions with a fluence of 1×10<sup>10</sup> ions/cm<sup>2</sup>, indicating that the radiation leads to the increase of defect density and serious damage to the device. Through the noise test, it is found that with the increase of the radiation fluence, the current noise power spectral density gradually increases. When the fluence reaches 1×10<sup>10</sup> ions/cm<sup>2</sup>, the defect density increases to 3.19×10<sup>18</sup> cm<sup>–3</sup>·eV<sup>–1</sup>, and the Hooge parameter increases after having been irradiated by heavy ions. We believe that the radiation leads to the defect density and parasitic series resistance of AlGaN/GaN HEMT device to increases, resulting in larger Hooge parameters. Through analyzing the variation of the normalized power spectral density of the drain current noise with bias voltage, it is found that the defects caused by heavy ion radiation will cause the parasitic series resistance to increase.

In-depth investigations into symmetrical labyrinthine acoustic metamaterial with two micro-slit entries for low-frequency sound absorption.

Sound absorption below 1000 Hz has been extremely difficult through traditional barriers and absorbers, but it is required for noise control of appliances and machineries. Existing passive acoustic metamaterials attenuate low-frequency noise but with narrow bandwidths and bulky sizes. Hence, this paper proposes an acoustic metamaterial with enclosed symmetrical labyrinthine air channels and two micro-slits (configuration 1, identical slits; configuration 2, unequal length slits) at the end channels. Its theoretical model is established by acoustic impedance analysis using electro-acoustic analogy and validated numerically and experimentally. Sound absorption is found to happen as a result of impedance matching, Fabry-Perot-like labyrinthine resonances, and thermo-viscous losses in micro-slits. Parametric investigations reveal that increase in the number of channels, channel length, total height, and outer panel thickness shifts sound absorption peak to lower frequency but also decreases the magnitude and frequency range of absorption. Decreasing the channel width and slit width increases the sound absorption magnitude without changing absorption frequencies. Interestingly, unequal slit lengths perform better than equal slits by giving a lower frequency sound absorption with increased magnitude and frequency range, which is unlike that in existing labyrinthine metamaterials. Therefore, the proposed unequal slit metamaterial has enhanced low-frequency sound absorption and can be applied to appliances and machineries.

Sensitivity of Methods for Diagnosing Noise-Induced Hearing Loss in Cases of Exposures Including Intense Low-Frequency Noise.

Exposure to intense low-frequency sounds, for example inside tanks and armoured vehicles, can lead to noise-induced hearing loss (NIHL) with a variable audiometric pattern, including low- and mid-frequency hearing loss. It is not known how well existing methods for diagnosing NIHL apply in such cases. Here, the audiograms of 68 military personnel (mostly veterans) who had been exposed to intense low-frequency noise (together with other types of noise) and who had low-frequency hearing loss (defined as a pure-tone average loss at 0.25, 0.5 and 1 kHz ≥20 dB) were used to assess the sensitivity of three diagnostic methods: the method of Coles, Lutman and Buffin, denoted CLB, which depends on the identification of a notch or bulge in the audiogram near 4 kHz, and two methods specifically intended for diagnosing NIHL sustained during military service, the rM-NIHL method, which depends on the identification of a notch or bulge in the audiogram near 4 kHz and/or a hearing loss at high frequencies greater than expected from age alone, and the MLP(18) method based on a multi-layer perceptron. The proportion of individuals receiving a positive diagnosis for either or both ears, which provides an approximate measure of sensitivity, was 0.40 for the CLB method, 0.79 for the rM-NIHL method and 1.0 for the MLP(18) method. It is concluded that the MLP(18) method is suitable for diagnosing NIHL sustained during military service whether or not the exposure includes intense low-frequency sounds.

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

Ionizing radiation influence on 28-nm MOS transistor's low-frequency noise characteristics

In this paper, we explore the transitions of low-frequency noise characteristics in high-k metal-gate bulk CMOS transistors induced by Total Ionizing Dose (TID). Due to the strong bias dependence of the noise characteristics, differentiating between noise shifts caused by the effective biasing change and the contribution of the newly generated traps becomes extremely challenging. In order to better understand the effects of irradiation, transistor noise had to be characterized at several biasing points, both in linear and saturation regions, before and after exposure to 1 Grad (SiO2) of TID. Correlation between shifts in time and frequency domain is presented in this work, along with possible explanations for each variation that occurs. We present examples of irradiation-generated Random Telegraph Noise (RTN) defects as well as various TID effects on noise Power Spectral Density (PSD) curves with pre-existing RTN sources.

A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs

A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices

Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices

Transformer and Graph Convolution-Based Unsupervised Detection of Machine Anomalous Sound Under Domain Shifts

Transformer and Graph Convolution-Based Unsupervised Detection of Machine Anomalous Sound Under Domain Shifts

Why Do Angular Margin Losses Work Well for Semi-Supervised Anomalous Sound Detection?

Why Do Angular Margin Losses Work Well for Semi-Supervised Anomalous Sound Detection?

Acoustic measurements in single-rotor/wing interaction at low disk loading and Reynolds number

The tiltrotor design is favored for urban air mobility (UAM) prototypes due to the combination of vertical takeoff and landing (VTOL) capability and efficient forward flight. With rising UAM air traffic at low altitudes, noise from these aircraft is a crucial design factor. Most tiltrotor noise research focuses on high disk loading and Reynolds number setups, leaving smaller aircraft configurations less explored. This study investigates aero-acoustic trends from rotor-wing interaction at low disk loading ([Formula: see text]100 N/m2) and Reynolds number (Re < 100,000). While prior literature suggests lowering disk loading and reducing rotor wake interference can mitigate rotor noise, such ideas lack empirical validation. The setup involves an anechoic chamber housing a two-blade rotor, along with flat and NACA 0012 airfoil wings. Microphones and a rotation stage capture acoustic data for analysis. Factors like flow recirculation, isolated rotor noise, rotor height, rotation direction/rate, and wing curvature are assessed for impact on noise signature. It is found that the deflected rotor wake in rotor-wing interaction significantly increases low-frequency broadband noise and overall sound pressure level (OASPL), compared to an isolated rotor. Dominant tonal noise diminishes based on the strength of the deflected rotor wake. These findings offer insights into reducing noise from rotor wake impingement on the wing.

A High-Precision Bandgap Reference with Chopper Stabilization and V-Curve Compensation Technique.

The MEMS sensor converts the physical signal of nature into an electrical signal. The output signal of the MEMS sensor is so weak and basically in the low-frequency band that the MEMS sensor interface circuit has a rigorous requirement for the noise/offset and temperature coefficient, especially in the bandgap reference block. However, the traditional amplifier has low-frequency noise and offset voltage, which will decrease the precision of the bandgap reference. In order to satisfy the need of the MEMS sensor interface circuit, a high-precision and low-noise bandgap reference is proposed in this paper. A novel operational amplifier with a chopper-stabilization technique is adopted to reduce offset and low-frequency noise. At the same time, the V-curve compensation circuit is used to realize the second-order curvature compensation. The circuit is implemented under the 0.18 μm standard of the CMOS process. The test result shows that the temperature coefficient of the bandgap is 2.31 ppm/°C in the range of -40-140 °C, while the output voltage noise is only 616 nV/sqrt(Hz)@1 Hz and the power-supply rejection ratio is 73 dB@10 kHz. The linear adjustment rate is 0.33 mV/V for supply voltages of 1.2-1.8 V at room temperature, the power consumption is only 107 μW at 1.8 V power supply voltage, and the chip active area is 0.21 × 0.28 mm2.

Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process

This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once with organic precursor materials and once with chloridic precursor materials. The investigation shows an improvement in the noise behavior when using chloridic precursor materials. Regarding the main noise source, which are divided into fluctuation of the number of carriers (ΔN) and fluctuation of the effective transistor mobility (Δμ), the results show that the devices fabricated with organic precursor materials show typical behavior of ΔN noise, where the devices fabricated with chloridic precursor materials show typical behavior of Δμ noise.

Low-frequency noise and impedance measurements in Auger suppressed LWIR N+p(π)P+n+ HgCdTe detector

The paper reports on the electrical performances of LWIR N+p(π)P+n+ HgCdTe photodiodes optimized for λcut-off(50%) ≈ 10.6 μm at T = 230 K. Presented work mainly focuses on the region where negative resistance is observed due to Auger suppression effect. Previous reports showed that for such detectors it is usually observed at temperature conditions above ∼120 K for devices designed to operate in HOT conditions. The studies were carried out over a wide temperature range using few measurement methods: dark current, low-frequency noise, and impedance components. The results were also investigated as a function of the applied bias. A detailed analysis of the results were presented to show the influence of operating conditions when the detector works in negative resistance region. In these regions, we observed a dynamic change of the complex impedance from both parallel capacitance and resistance. The low-frequency noise measurements showed that in the negative resistance region, the noise spectral density is still rising with the reverse bias voltage despite reduction of the dark current by Auger suppression and the noise-current related intensity coefficient α is also still tends to rise. For temperatures above 160 K the noise-bias voltage interdependence near Si ∼ V2 was noticed. Moreover, the studies showed that the noise-temperature behaviour depends on the applied bias. The results obtained in experiments were discussed based on the current knowledge of these devices to verify and explain the behaviours of the dark current, noise and impedance-related parameters.

Wide-frequency-range vibration positioning based on adaptive TQWT for long-distance asymmetric interferometer sensor

The asymmetric dual Mach–Zehnder interferometer (ADMZI) based vibration sensor effectively extends the sensing distance, however, the asymmetry seriously deteriorates the positioning accuracy. In this paper, an adaptive tunable Q-factor wavelet transform (TQWT) based long-distance asymmetric sensing system is proposed and experimentally demonstrated for the positioning of wide-frequency-range knocking vibration signals. The TQWT can extract the time-frequency features of the non-stationary signals by performing multi-scale decomposition. Firstly, the positioning method adaptively determines the decomposition levels by analyzing the power spectrum of the vibration signals, which not only effectively suppresses the effect of low-frequency noise, but also accurately extracts the main time-frequency variation characteristics of the vibration signals with various bandwidths. Then, the time delay between the time-frequency characteristics is obtained using a cross-correlation algorithm, and the vibration position is demodulated. Experimental results show that the method can accurately locate vibration signals with bandwidths of 10–80 kHz at a sensing length of 125 km. For high-frequency, strong vibration signals, the standard deviation of the positioning is around 35.1 m. For low-frequency, weak signals, the proposed method can still achieve effective positioning compared with the traditional approaches with a standard deviation of approximately 238.1 m. The proposed scheme can significantly improve the applicability of the asymmetric interferometer based vibration sensing system.

(Invited) In-Depth Understanding of the Key Contributors to the Total Flicker Noise in Advanced Logic Devices

The aim of this work is to perform an in-depth analysis in order to identify the key contributors to the total flicker noise in advanced MOSFET technologies, e.g. UTBOX, FinFET or Gate-all-around (GAA) nanowire or nanosheet FET devices.In this abstract, as an example, we will focus on p-type gate all around silicon vertical nanowire devices fabricated at imec. The transistors have a fixed gate length (LG) of 50 nm and 1200 nanowires in parallel (N), each nanowire (NW) having a diameter (WNW) of 20 nm. The total width (W) of the device is calculated as . The gate stack corresponds to an equivalent oxide thickness (EOT) of 0.9 nm. A full description of the process flow of the devices is presented in [1]. Comparison between the Y-function strategy of [2] and McLarty methodology [3] permits to estimate with accuracy the DC parameters necessary for low frequency noise modelling, which are summarized in Table 1.Typical low frequency noise spectra are shown in Figure 1. The methodology for the estimation of the low frequency noise parameters is described in [4], but it is obvious that the noise spectra are dominated by 1/f noise and only few Lorentzian contributions appear for some gate voltage polarization. As the corresponding flicker noise levels (K f ), plotted in Figure 2 present a plateau and rise with the increase of the applied gate voltage, the responsible 1/f noise mechanism should be related to the carrier number or correlated carrier number fluctuations mechanism, with a possible contribution of the access resistance 1/f noise.Firstly, the model described in [5-9] expressed as in equation (1) is employed. A linear dependence of the square root of the 1/f noise levels on the measured Id/gm is observed in Figure 3, permitting to estimate from the intercept and slope the flat-band noise level (Svfb) and the W coefficient, respectively. Using the methodology of [9] the estimated W parameter is corrected by the access resistance influence. Good agreement with experimental data in strong inversion may be observed in both cases (Figure 4).Secondly, the model which considers the small signal model of the MOSFET is used, assuming that the channel resistance noise and access resistances noise are uncorrelated noise sources [2,10,11]. The model may be expressed by equation (2) ((13) of [11]), in order to make no assumption concerning the gm/gch ratio. Beyond the threshold voltage, the impact of the cannot be neglected, as observed from Figure 5. It may be observed from Figure 6 that the correlated number fluctuation and mobility noise mechanism cannot explain the flicker noise behavior in very strong inversion, and an additional contribution of the access resistances noise may be considered in order to agree with the experimental data.The noise parameters estimated to agree with the experimental data for both models are summarized in Table 2. It is interesting to note that the experimental data may be explained by both models, but the key contributors are not the same: only correlated number fluctuations and mobility noise mechanism for the first model, and correlated number fluctuations and mobility and access resistance noise mechanisms contribution for the second one. Moreover, the estimated flat-band noise levels are not the same, a much lower Svfb is obtained when the first model is employed. Considering the access resistance impact may correct the W coefficient, but leads to even lower flat-band noise levels, as already reported in [9].These results lead to some questioning about which of these two models is most accurate and give good indications on the key contributors and estimated parameters of the total flicker noise.

(Invited) Silicon Quantum Dot Single-Electron Pumps for the Closure of the Quantum Metrology Triangle

Si quantum dot (QD) devices fabricated by MOSFET technology are promising for future and ultimate quantum electronics such as quantum electrical standards and quantum computers. We have developed Si tunable-barrier QD devices with a quasi-gate-all-around (GAA) nanowire [1], which are designed to be used as basic elements such as single-electron (SE) transfer devices and qubits; the precise manipulation of charges and their states are realized in the QDs. The device is especially suitable for high-speed tunable-barrier SE pumps driven at GHz frequencies [2,3] which can generate an electric current via a single QD precisely equal to the elementary charge times the driving frequency and thereby are promising for quantum current standards [4].To achieve a high accuracy using tunable-barrier SE pumps [5-7], proper designs of device structures are required to secure robust charge quantization. The potential shape of the QD and the entrance tunnel barrier [8] are critical parameters to dictate the pump accuracy because they determine the charging energy and energy filtering effect during SE capture into the QD. Furthermore, deep understanding of electron dynamics such as mechanism crossover of the dynamical charge quantization process [9] and quantum nonadiabatic excitation [10]/electron-phonon relaxation inside the QD are important to get optimal accuracy and extend the frequency breakdown of SE pumps. We have recently developed a device simulator of Si GAA-nanowire SE pumps [11], which is a useful tool to find optimal design and control parameters in all the above-mentioned respects.One of the long-desired targets of SE pumps is to close the quantum metrology triangle (QMT) [12] by checking the consistency among three quantum electrical standards: the SE current standard, the quantum Hall resistance standard, and Josephson voltage standard (JVS). The Japanese QMT project [13] has aimed to conduct the QMT experiment with sub-ppm uncertainty in a single dilution refrigerator by placing all the quantum electric standards inside it. Our key approaches are to use quantum Hall array resistance (QHAR) [14] and parallelized Si SE pumps, which provide higher resistance and current respectively, making the generated voltage more easily compared to JVS. In the project we have succeeded in developing a current-reversal technique with electromechanical relays to cancel out the drift and low frequency noise from various sources in the measurement setup, and applying it to high accuracy measurement of current delivered by a Si SE pump [15]. We have also recently performed a comparison measurement of two Si SE pump operated in parallel and thereby have confirmed a sub-ppm level accuracy [16]. All these progresses will lead to a more precise closure of QMT at deep sub-ppm level in the new future. Si MOSFET technology continues to expand its versatility into quantum electronics technology. This work was supported by JSPS KAKENHI Grant Number JP18H05258. A. Fujiwara et al., Appl. Phys. Lett. 84, 1323 (2004); Appl. Phys. Lett. 88 053121 (2006).A. Fujiwara et al., Appl. Phys. Lett. 92, 042102 (2008)G. Yamahata et al., Appl. Phys. Lett. 106, 023112 (2015).N.-H. Kaneko et al., Meas. Sci. Technology 27 032001 (2016).B. Kaestner and V. Kashcheyevs, Rep. Prog. Phys. 78, 103901 (2015).G. Yamahata et al., Appl. Phys. Lett. 109, 013101 (2016).S. P. Giblin et al., Metrologia 56, 044004 (2019).N. Johnson et al., Appl. Phys. Lett. 115, 162103 (2019).G. Yamahata et al., Phys. Rev. B 103, 245306 (2021).G. Yamahata et al., Nat. Nanotechnol. 14, 1019 (2019).A. Fujiwara et al., in the Conference on Precision Electromagnetic Measurements (CPEM 2022).F. Piquemal and G. Genevès, Metrologia 37, 207 (2000).https://www.jsps.go.jp/file/storage/grants/j-grantsinaid/12_kiban/ichiran_30/e-data/h_30_eng_18h05258.pdf; http://www.brl.ntt.co.jp/people/afuji/kakenS/ (only in Japanese).T. Oe et al., IEEE Trans. Instrum. Meas. 66, 1475 (2017).S. Nakamura et al., IEEE Trans. Instrum. Meas, under review.S. Nakamura et al., in preparation.

Low-frequency background estimation and noise separation from high-frequency for background and noise subtraction.

In fluorescence microscopy, background blur and noise are two main factors preventing the achievement of high-signal-to-noise ratio (SNR) imaging. Background blur primarily emanates from inherent factors including the spontaneous fluorescence of biological samples and out-of-focus backgrounds, while noise encompasses Gaussian and Poisson noise components. To achieve background blur subtraction and denoising simultaneously, a pioneering algorithm based on low-frequency background estimation and noise separation from high-frequency (LBNH-BNS) is presented, which effectively disentangles noise from the desired signal. Furthermore, it seamlessly integrates low-frequency features derived from background blur estimation, leading to the effective elimination of noise and background blur in wide-field fluorescence images. In comparisons with other state-of-the-art background removal algorithms, LBNH-BNS demonstrates significant advantages in key quantitative metrics such as peak signal-to-noise ratio (PSNR) and manifests substantial visual enhancements. LBNH-BNS holds immense potential for advancing the overall performance and quality of wide-field fluorescence imaging techniques.

Microgravity Decoupling in Torsion Pendulum for Enhanced Micro-Newton Thrust Measurement

To enhance the accuracy of micro-Newton thrust measurements via a torsion pendulum, addressing microgravity coupling effects caused by platform tilt and pendulum mass eccentricity is crucial. This study focuses on analyzing and minimizing these effects by alleviating reference surface tilt and calibrating the center of mass during thrust measurements. The study introduced analysis techniques and compensation measures. It first examined the impact of reference tilt and center of mass eccentricity on the stiffness and compliance of the torsion pendulum by reconstructing its dynamic model. Simscape Multibody was initially employed for numerical analysis to assess the dynamic coupling effects of the tilted pendulum. The results showed the influence of reference tilt on the stiffness and compliance of the torsion pendulum through simulation. An inverted pendulum was developed to amplify the platform’s tilt angle for microgravity drag-free control. Center of mass calibration can identify the gravity coupling caused by the center of mass position. Based on the displacement signal from the capacitive sensor located at the end of the inverted pendulum, which represents the platform’s tilt angle, the pendulum’s vibration at 0.1 mHz was reduced from 5.7 μm/Hz1/2 to 0.28 μm/Hz1/2 by adjusting the voltage of piezoelectric actuator. Finally, a new two-stage torsion pendulum structure was proposed to decouple the tilt coupling buried in both pitch and roll angle. The study utilized theoretical models, numerical analysis, and experimental testing to validate the analysis methods and compensation measures for microgravity coupling effects in torsion pendulums. This led to a reduction in low-frequency noise caused by ground vibrations and thermal strains, ultimately improving the micro-Newton thrust measurement accuracy of the torsion pendulum through the platform’s drag-free control.

Low-frequency noise aggravates the toxicity of cadmium in sea slug Onchdium reevesii

Industrial development not only triggers heavy metal pollution but also introduces a less easily discernible disturbance: low-frequency noise pollution. Low-frequency noise can disrupt wildlife behavior, potentially exerting complex effects through interacting with heavy metals. Nevertheless, the cumulative impacts of low-frequency noise and cadmium (Cd) pollution on marine organisms remain largely unexplored. This study aimed to evaluate the immune defense response of sea slugs (Onchdium reevesii) exposed to Cd (1.32 mg/L) and low-frequency noise (500 Hz, 1000 Hz). Our results show that Cd exposure results in Cd2+ accumulation in the sea slug's hepatopancreas, leading to a decrease in total antioxidant capacity (TAC) and a significant increase in enzyme activities, including glutathione (GSH), lipid peroxidation (LPO), and aspartate transferase (AST). Additionally, there is a substantial upregulation in the expression of genes related to tumor protein p53 (p53), Cytochrome C (CytC), Caspase 3, and Caspase 9, as well as metallothionein (MT) and heat shock protein 70 (Hsp70) genes. Concurrently, an excessive production of reactive oxygen species (ROS) occurs in the hemocytes, resulting in apoptosis and subsequent diminished cell viability, with these effects positively correlating with the exposure duration. Furthermore, when sea slugs were exposed to both Cd and low-frequency noise, there was a decrease in the hepatopancreas's antioxidant capacity and an enhancement in hemocytes immune responses, which positively correlated with low-frequency noise frequency. The comprehensive assessment of biomarker responses highlights that low-frequency noise has the potential to amplify the deleterious effects of Cd on sea slug physiology, with this negative impact positively linked to noise frequency. Consequently, our study underscores that the combined influence of low-frequency noise and Cd pollution magnifies the effects on sea slug health. This could potentially disrupt the population stability of this species within its natural habitat, providing fresh insights into the evaluation of cumulative environmental pollution risks.