Low Field Conditions Research Articles

Behavior of the ε-Ga2O3:Sn Evaporation During Laser-Assisted Atom Probe Tomography.

The measurement of the composition of ε-Ga2O3 and the quantification of Sn doping in ε-Ga2O3:Sn by laser-assisted atom probe tomography (APT) may be inaccurate depending on the experimental conditions. Both the role of the laser energy and surface electric field were investigated, and the results clearly indicate that deviations from stoichiometry are observed changing the electric field conditions during APT. The measured atomic fraction of Ga can change from 0.45 at low field to 0.38 at high field, to be compared with the expected 0.4. This was interpreted in terms of preferential evaporation of Ga at high field and deficit of O at low field, which was caused by the formation of neutrals. The quantification of Sn-doping is accurate at low-field conditions, with an overestimation of the detected Sn-metallic fraction at high field. This suggests that Sn has a higher evaporation field compared to Ga. Finally, multiple detection events were in-depth studied, revealing that three dissociation reactions occur during APT: GaO2+ → Ga+ + O+; Ga2O22+ → Ga+ + GaO2+; Ga3O22+ → Ga+ + Ga2O2+. Nevertheless, only 2% of the detected events are related to such dissociation reactions, too small a fraction to fully explain the observed deviation from the stoichiometric composition in ε-Ga2O3.

Cyclic cooling of quantum systems at the saturation limit

The achievable bounds of cooling quantum systems, and the possibility to violate them is not well-explored experimentally. For example, among the common methods to enhance spin polarization (cooling), one utilizes the low temperature and high-magnetic field condition or employs a resonant exchange with highly polarized spins. The achievable polarization, in such cases, is bounded either by Boltzmann distribution or by energy conservation. Heat-bath algorithmic cooling schemes (HBAC), on the other hand, have shown the possibility to surpass the physical limit set by the energy conservation and achieve a higher saturation limit in spin cooling. Despite, the huge theoretical progress, and few principle demonstrations, neither the existence of the limit nor its application in cooling quantum systems towards the maximum achievable limit have been experimentally verified. Here, we show the experimental saturation of the HBAC limit for single nuclear spins, beyond any available polarization in solid-state spin system, the Nitrogen-Vacancy centers in diamond. We benchmark the performance of our experiment over a range of variable reset polarizations (bath temperatures), and discuss the role of quantum coherence in HBAC.

Long-Term Generation of Longitudinal Spin Order Controlled by Ammonia Ligation Enables Rapid SABRE Hyperpolarized 2D NMR.

Symmetry breaking of parahydrogen using iridium catalysts converts singlet spin order into observable hyperpolarization. In this contribution, iridium catalysts are designed to exhibit asymmetry in their hydrides, regulated by in situ generation of deuterated ammonia governed by ammonium buffers. The concentrations of ammonia (N) and pyridine (P) provide a handle to generate a variety of stereo-chemically asymmetric N-heterocyclic carbene iridium complexes, ligating either [3xP], [2xP;N], [P;2xN] or [3xN] in an octahedral SABRE type configuration. The non-equivalent hydride positions, in correspondence with the ammonium buffer solutions, enables to extend singlet-triplet or mixing at high magnetic field and experimentally induce prolonged generation of non-equilibrium longitudinal two-spin order. This long-lasting magnetization can be exploited in hyperpolarized 2D-OPSY-COSY experiments providing direct structural information on the catalyst using a single contact with parahydrogen. Separately, field cycling revealed hyperpolarization properties in low-field conditions. Controlling catalyst stereochemistry by introducing small and deuterated ligands, such as deuterated ammonia, simplifies the spin-system. This is shown to unify experimental and theoretically derived field-sweep experiments for four-spin systems.

Novel QTL Associated with Shoot Branching Identified in Doubled Haploid Rice (Oryza sativa L.) under Low Nitrogen Cultivation.

Shoot branching is considered as an important trait for the architecture of plants and contributes to their growth and productivity. In cereal crops, such as rice, shoot branching is controlled by many factors, including phytohormones signaling networks, operating either in synergy or antagonizing each other. In rice, shoot branching indicates the ability to produce more tillers that are essential for achieving high productivity and yield potential. In the present study, we evaluated the growth and development, and yield components of a doubled haploid population derived from a cross between 93-11 (P1, indica) and Milyang352 (P2, japonica), grown under normal nitrogen and low nitrogen cultivation open field conditions. The results of the phenotypic evaluation indicated that parental lines 93-11 (P1, a high tillering indica cultivar) and Milyang352 (P2, a low tillering japonica cultivar) showed distinctive phenotypic responses, also reflected in their derived population. In addition, the linkage mapping and quantitative trait locus (QTL) analysis detected three QTLs associated with tiller number on chromosome 2 (qTNN2-1, 130 cM, logarithm of the odds (LOD) 4.14, PVE 14.5%; and qTNL2-1, 134 cM, LOD: 6.05, PVE: 20.5%) and chromosome 4 (qTN4-1, 134 cM, LOD 3.92, PVE 14.5%), with qTNL2-1 having the highest phenotypic variation explained, and the only QTL associated with tiller number under low nitrogen cultivation conditions, using Kompetitive Allele-Specific PCR (KASP) and Fluidigm markers. The additive effect (1.81) of qTNL2-1 indicates that the allele from 93-11 (P1) contributed to the observed phenotypic variation for tiller number under low nitrogen cultivation. The breakthrough is that the majority of the candidate genes harbored by the QTLs qTNL2-1 and qTNN4-1 (here associated with the control of shoot branching under low and normal nitrogen cultivation, respectively), were also proposed to be involved in plant stress signaling or response mechanisms, with regard to their annotations and previous reports. Therefore, put together, these results would suggest that a possible crosstalk exists between the control of plant growth and development and the stress response in rice.

Characteristics of neutron emission profile from neutral beam heated plasmas of the Large Helical Device at various magnetic field strengths

The neutron emission profile of deuterium plasma in the Large Helical Device was measured with a multi-sightline vertical neutron camera under various magnetic field strength conditions. It was found that the line-integrated neutron emission profile shifts outward in the co-neutral beam (NB) case and inward in the counter NB case. Here, co- and counter directions correspond to enhance and reduce the poloidal magnetic field directions, respectively. The shift becomes more significant when the magnetic field decreased in strength. The experimentally obtained neutron emission profile was compared with the orbit-following models simulated through the DELTA5D code. The calculated neutron emission profiles vary according to the magnetic field strength because of the change of beam ion orbit and the slowing down due to the plasma parameter changes. Although a relatively narrow profile was obtained in the calculations at the inboard side for the co-NB case in the relatively low field condition, the profiles obtained through calculation and experiment were almost qualitatively aligned.

Phytochemical content and antioxidant activity of Gynura procumbens in response to shade levels and rates of nitrogen fertilizer

Gynura procumbens is one of the most common medicinal plants with extensive pharmacological properties. Light intensity and nitrogenous fertilisers are two main limiting factors in primary and secondary metabolism in plants. Information on the effects of shade levels and nitrogenous fertiliser rates on phytochemical content and antioxidant activity of G. procumbens is much scarce. This justifies an in-depth study to determine the effects of phytochemical content and antioxidant activity. This study was conducted with four levels of shade (0, 30, 50, and 70%) and four nitrogen fertilizer rates (0, 100, 200 and 300 kg N ha-1). Data measurements were performed on protein content, C:N ratio, total phenolic content (TPC), total flavonoid content (TFC), antioxidant activity (DPPH, FRAP) and flavonoid acids. The results showed that decreases in total phenol, flavonoid contents, C:N ratio and antioxidant activity were recorded with increasing shade levels and nitrogen rates. Protein content was increased with increases in shade levels and nitrogen fertilizer supplement. The highest flavonoid acids contents were observed from higher light intensity (no shade) and no nitrogen application. Enhancement in production of secondary metabolites and antioxidant activity were associated with high C:N ratio and low protein contents. The study demonstrated that high light intensity (0% shade) with a low N fertilizer rate (0 kg N ha−1) was suitable for both phenolic compounds and antioxidants activity. The present study suggested that G. procumbens can achieve higher production of polyphenolic compounds and antioxidant activity under low nitrogen availability and open field conditions

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

In this paper, we report a 1.84 kV GaN-on-GaN Schottky barrier diode (SBD) corresponds to a low on-resistance of 1.98 mΩ-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The GaN epi-layer was etched to the multi-fins-structure with optimized bevel angle. The fins structure enables to improve the breakdown voltage by means of the uniforme electric field distribution. Afterwards, the GaN fins were capped by atomic layer deposition (ALD)-grown AlN film. The AlN served as a tunneling-barrier layer, which not only passivated the GaN surface but also decreased the turn-on voltage. The AlN-capped SBD shows a turn-on voltage at 0.18 V. Furthermore, the temperature-dependent transfer characteristics suggest the different current tunneling mechanisms at low and high electric field conditions, respectively. The time-dependent dielectric breakdown (TDDB) measurement suggests the surface traps were well passivated by ALD-AlN, which implies that the AlN cap-layer enables to improve the device reliability.

A Sensitivity Mapping Technique for Tensile Force and Case Depth Characterization Based on Magnetic Minor Hysteresis Loops

In the nondestructive testing and evaluation area, magnetic major hysteresis loop measurement technology are widely applied for ferromagnetic material evaluation. However the characterization ability of major hysteresis loop measurement technology greatly varies as the evaluated target properties. To solve this limitation, magnetic minor hysteresis loops, which reflect the responses of ferromagnetic material magnetization in a systematic way, is recommend. Inspired by plenty of information carried by the minor loops, the sensitivity mapping technique was developed to achieve the highest sensitivity of minor-loop parameters to the nondestructively evaluated targets. In this study, for the first time, the sensitivity mapping technique is used to measure the tensile force in a steel strand and evaluate the effective case depth in induction-hardened steel rods. The method and procedures for the sensitivity mapping technique are given before experimental detection. The obtained experimental results indicate that the linear correlation between the induced voltage (or the magnetic induction intensity) and the tensile force (or effective case depth) exists at most of the locations in the cluster of minor loops. The obtained sensitivity maps can be used to optimize the applied magnetic field (or excitation current) and the analyzed locations at the minor loops for achieving the highest sensitivity. For the purpose of tensile force measurement, it is suggested that the strand should be firstly magnetized to the near-saturation state and then restored to the remanent state. In this way, the highest sensitivity is obtained as about 15.26 mV/kN. As for the induction-hardened steel rods, the highest sensitivity of magnetic induction intensity to the effective case depth occurs under low magnetic field conditions and the absolute value of the highest sensitivity is about 0.1110 T/mm. This indicates that if the highest sensitivity is required in the case depth evaluation, the induction-hardened steel rods are only required to be weakly magnetized. The proposed sensitivity mapping technique shows the good performance in the high-sensitivity evaluation of tensile force and case depth in ferromagnetic materials and its application scope can be extended to other nondestructive detection fields.

A low-magnetic field high-efficiency high-power microwave source with novel diode structure

The design of compact, lightweight devices has become an important development direction of high-power microwave source devices, with the reduction of the external magnetic field being the leading innovation. By analyzing the transmission equation of the intense relativistic electron beam (IREB), it can be known that magnetic field strength in the diode region has great influence on the transmission quality of the IREB. In this paper, a new structure that introduces a soft magnetic material as the cathode base is proposed. Considering that soft magnetic materials have the capability to concentrate and enhance the magnetic field, the proposed structure leverages this merit to improve the magnetic field strength in the diode area under certain low external magnetic field conditions. Thus, the proposed structure is capable of effectively improving the emission and transmission quality of the IREB without any increase of the external guiding magnetic field. As for the device design, the new structure was introduced into a previously proposed C-band transit time oscillator, and the particle-in-cell simulation was carried out. The results showed that high power microwaves with a power of 2.7 GW are generated with a corresponding frequency of 40% when the electron beam voltage is 550 kV, the beam current is 12 kA, and the guiding magnetic field is 0.3 T.

Atom probe tomography quantification of carbon in silicon

Atom Probe Tomography (APT) was used to quantify carbon in implanted silicon at two various electric fields (~ 15 and 20 V/nm). Using equal proportions of implanted 12C and 13C, the numerous molecular ions that were observed were identified and their contribution to the carbon content statistically derived. Much more accurate carbon quantification was obtained in the lowest electric field analysis by comparing APT with Secondary Ion Mass Spectroscopy profiles. This was assigned to a lower amount of molecular ion dissociations. Furthermore, the number of self-interstitials trapped per carbon atom in clusters was derived. This value of interest for the microelectronics industry regarding dopant diffusion and implantation induced defects was estimated close to one, in agreement with the expected stoichiometry of the SiC phase present in the phase diagram. However, this was obtained only when using low electric field conditions.

Soil legacy determines arbuscular mycorrhizal spore bank and plant performance in the low Arctic

Human impact is rapidly changing vegetation globally. The effect of plant cover that no longer exists in a site may still affect the development of future vegetation. We focused on a little studied factor—arbuscular mycorrhizal (AM) fungus spore bank—and its effect on three test plant species. In a low Arctic field site, plots were maintained for 6 years, devoid of any vegetation or with a Solidago virgaurea monoculture cover. We analysed the AM fungal morphospecies composition and identified 21 morphospecies in the field plots. The AM morphospecies community was dominated by members of Acaulosporaceae. Monoculturing under low Arctic field conditions changed the soil AM spore community, which became dominated by Glomus hoi. We tested the soil feedback in the greenhouse and grew Solidago virgaurea, Potentilla crantzii and Anthoxanthum odoratum in the field soils from the plots without plant cover, covered with Solidago virgaurea or with intact vegetation. Our results suggest that monoculturing resulted in improved N acquisition by the monocultured plant species Solidago virgaurea which may be related to the AM fungus community. Our results show that a rich community of AM fungus spores may remain viable under field conditions for 6 years in the low Arctic. Spore longevity in field soil in the absence of any host plants differed among AM fungus species. We suggest that AM fungus spore longevity be considered an AM fungal life-history trait.

High Kinetic Energy Ion Mobility Spectrometry (HiKE-IMS) at 40 mbar.

High Kinetic Energy Ion Mobility Spectrometers (HiKE-IMS) are usually operated at an absolute pressure of 20 mbar reaching high reduced electric field strengths of up to 125 Td for controlled reaction kinetics. This significantly increases the linear range and limits chemical cross sensitivities. Furthermore, HiKE-IMS enables the ionization of compounds normally not detectable in ambient pressure IMS, such as benzene, due to new reaction pathways and the inhibition of clustering reactions. In addition, HiKE-IMS allows the observation of additional orthogonal parameters related to an increased ion temperature such as fragmentation and field-dependent ion mobility, which may help to separate compounds that have similar ion mobility under low field conditions. Aiming for a hand-held HiKE-IMS to carry its benefits into field applications, reducing size and power consumption of the vacuum system is necessary. In this work, we present a novel HiKE-IMS design entirely manufactured from standard printed circuit boards (PCB) and experimentally investigate the analytical performance in dependence of the operating pressure between 20 mbar and 40 mbar. Hereby, the limit of detection (LoD) for benzene in purified, dry air (1.4 ppmV water) improved from 7 ppbV at 20 mbar down to 1.8 ppbV at 40 mbar. Furthermore, adding 0.9 ppmV toluene, the signal of the benzene B+ peak decreased by only 2% at 40 mbar. Even in the presence of high relative humidity in the sample gas above 90% or toluene concentrations of up to 20 ppmV, the LoD for benzene just increased to 9 ppbV at 40 mbar.

Understanding Nontraditional Differential Mobility Behavior: A Case Study of the Tricarbastannatrane Cation, N(CH2CH2CH2)3Sn.

The effect of strong ion-solvent interactions on the differential mobility behavior of the tricarbastannatrane cation, N(CH2CH2CH2)3Sn+, has been investigated. Exotic "type D" dispersion behavior, which is intermediate to the more common types C and A behavior, is observed for gaseous N2 environments that are seeded with acetone and acetonitrile vapor. Quantum chemical calculations and first-principles modeling show that under low-field conditions [N(CH2CH2CH2)3Sn + solvent]+ complexes containing a single solvent molecule survive the entire separation waveform duty cycle and interact weakly with the chemically modified environment. However, at high separation voltages, the ion-solvent bond dissociates and dynamic clustering ensues.

Engineering Iron–Nickel Nanoparticles for Magnetically Induced CO2Methanation in Continuous Flow

AbstractInduction heating of magnetic nanoparticles (NPs) is a method to activate heterogeneous catalytic reactions. It requires nano‐objects displaying high heating power and excellent catalytic activity. Here, using a surface engineering approach, bimetallic NPs are used for magnetically induced CO2methanation, acting both as heating agent and catalyst. The organometallic synthesis of Fe30Ni70NPs displaying high heating powers at low magnetic field amplitudes is described. The NPs are active but only slightly selective for CH4after deposition on SiRAlOx owing to an iron‐rich shell (25 mL min−1, 25 mT, 300 kHz, conversion 71 %, methane selectivity 65 %). Proper surface engineering consisting of depositing a thin Ni layer leads to Fe30Ni70@Ni NPs displaying a very high activity for CO2hydrogenation and a full selectivity. A quantitative yield in methane is obtained at low magnetic field and mild conditions (25 mL min−1, 19 mT, 300 kHz, conversion 100 %, methane selectivity 100 %).

Engineering Iron–Nickel Nanoparticles for Magnetically Induced CO2Methanation in Continuous Flow

Induction heating of magnetic nanoparticles (NPs) is a method to activate heterogeneous catalytic reactions. It requires nano-objects displaying high heating power and excellent catalytic activity. Here, using a surface engineering approach, bimetallic NPs are used for magnetically induced CO2 methanation, acting both as heating agent and catalyst. The organometallic synthesis of Fe30 Ni70 NPs displaying high heating powers at low magnetic field amplitudes is described. The NPs are active but only slightly selective for CH4 after deposition on SiRAlOx owing to an iron-rich shell (25 mL min-1 , 25 mT, 300 kHz, conversion 71 %, methane selectivity 65 %). Proper surface engineering consisting of depositing a thin Ni layer leads to Fe30 Ni70 @Ni NPs displaying a very high activity for CO2 hydrogenation and a full selectivity. A quantitative yield in methane is obtained at low magnetic field and mild conditions (25 mL min-1 , 19 mT, 300 kHz, conversion 100 %, methane selectivity 100 %).

Memristive and magnetoresistance effects of SnSe&lt;sub&gt;2&lt;/sub&gt;

Memristor and magnetoresistance (MR) are widely used in the field of information storage. In recent years, SnSe&lt;sub&gt;2&lt;/sub&gt;, as an information storage material with both memristor and MR effects, has received a lot of attention of the researchers. It is of great significance to further explore its electrical transport mechanism. In this paper, the high-purity bulk SnSe&lt;sub&gt;2&lt;/sub&gt; samples are prepared by melting method together with spark plasma sintering. The &lt;i&gt;V&lt;/i&gt;-&lt;i&gt;I&lt;/i&gt; curves are measured under different temperatures and magnetic fields. The memristive and MR effect of SnSe&lt;sub&gt;2&lt;/sub&gt; are systematically investigated. After the memristive characteristics are excluded from interfacial junction effect, phase transition and conductive wire channels, the memristive effect at different temperatures is attributed to the space charge limiting current effect under defect control. Under low electric field conditions, the internal carrier concentration of material is much higher than the injected carrier concentration and the &lt;i&gt;V&lt;/i&gt;-&lt;i&gt;I&lt;/i&gt; curve obeys ohmic conduction. When the voltage increases to the switching voltage &lt;i&gt;V&lt;/i&gt;&lt;sub&gt;on&lt;/sub&gt;, the internal defects of the material are filled with the injected carriers as the transport time of the injected carrier is less than the dielectric relaxation time, and the &lt;i&gt;V&lt;/i&gt;-&lt;i&gt;I&lt;/i&gt; curves deviate from ohmic conductivity. When the voltage reaches the transition voltage &lt;i&gt;V&lt;/i&gt;&lt;sub&gt;TFL&lt;/sub&gt;, the injected carrier increases exponentially, and the &lt;i&gt;V&lt;/i&gt;-&lt;i&gt;I&lt;/i&gt; curve presents negative differential phenomenon. Finally, the space charge inside the material will limit the further injection of external carriers, and the &lt;i&gt;V&lt;/i&gt;-&lt;i&gt;I&lt;/i&gt; curve follows the Child law. As the temperature decreases to 10 K, the memristive phenomenon weakens because a large number of defects for accepting the injected carriers are reduced due to the decrease of impurity ionization at low temperatures. At the same time, the sample exhibits a large negative MR at 10 K and 100 K. When impurity scattering predominates, the electrons will be subjected to multiple scattering by the impurities, resulting in localization of carriers. The negative MR effect is related to the inhibition of the carrier localization by the magnetic field. In our work, a large negative MR of about –37% at 0.6 T and 10 K are obtained, which is likely to originate from the disordered distribution of Se vacancy in the material. With the increase of temperature, the scattering mechanism gradually evolves from the impurity scattering into the lattice scattering, and the negative MR effect gradually develops into the positive MR effect.

A cytokinin-activation enzyme-like gene improves grain yield under various field conditions in rice.

CRISPR-edited variants at the 3'-end of OsLOGL5's coding sequence (CDS), significantly increased rice grain yield under well-watered, drought, normal nitrogen, and low nitrogen field conditions at multiple geographical locations. Cytokinins impact numerous aspects of plant growth and development. This study reports that constitutive ectopic overexpression of a rice cytokinin-activation enzyme-like gene, OsLOGL5, significantly reduced primary root growth, tiller number, and yield. Conversely, mutations at the 3'-end of OsLOGL5 CDS resulted in normal rice plant morphology but with increased grain yield under well-watered, drought, normal nitrogen, and low nitrogen field conditions at multiple geographical locations. Six gene edited variants (Edit A to F) were created and tested in the field. Edit-B and Edit-F plants increased, but Edit-D and Edit-E plants decreased, the panicle number per plant. All OsLOGL5-edited plants significantly increased seed setting rate, total grain numbers, full-filled grain numbers per panicle, and thousand seed weight under drought conditions, suggesting that OsLOGL5 is likely involved in the regulation of both seed development and grain filling processes. Our results indicate that the C-terminal end of OsLOGL5 protein plays an important role in regulating rice yield improvement under different abiotic stress conditions, and OsLOGL5 is important for rice yield enhancement and stability.

Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs

With the objective of applying laser-assisted atom probe tomography to compositional analysis within nanoscale InGaAs devices, experimental conditions that may provide an accurate composition estimate were sought by extensively studying an InGaAs blanket film. Overall, the determined arsenic atomic fraction was found to exhibit an electric field dependent deficiency, which was more pronounced at low field conditions. Although the determined group III site-fraction also showed a (weak) field-dependent deficiency at low field conditions, it remained invariant with analysis conditions and in close agreement with the nominal value at higher field. In this study, we investigate and discuss the mechanisms that could potentially contribute to As underestimation. Given the field dependence observed, the phenomena occurring between low and high field conditions are compared. At low field, the tendency of As to field evaporate in significant amounts as multiply charged cluster ions (Asni+ with n as large as 9 and i = 1,2,3) is shown to be a significant source of compositional inaccuracy. These clusters may lead to peak overlap in the mass spectrum (e.g. the peak at 150 Da may represent As42+ or As2+ or both), thereby creating an uncertainty in the quantification. Emitted clusters may also dissociate with the likelihood of neutral generation and multi-hit losses being non-negligible. Experimental studies and density functional theory calculations are presented to characterize cluster stability and its contribution to measurement uncertainty. Under high field conditions, although fewer clusters are detected and the composition appears more accurate, the emergence of two additional mechanisms, i.e., multi-hits and DC evaporation, may degrade the data quality. The challenges in evaluating the impact of all these loss mechanisms are examined in detail. Finally, we show that for InGaAs under UV illumination, due to the laser-tip interaction, the resulting asymmetric electric field distribution across the apex introduces local atomic fraction variations.

Role of the Fraction of Blocked Nanoparticles on the Hyperthermia Efficiency of Mn-Based Ferrites at Clinically Relevant Conditions

To investigate the role of magnetic anisotropy on magnetic hyperthermia heating efficiency at low field conditions, Mn, MnZn, and MnCo-ferrite nanoparticles were synthesized using the hydrothermal method. The coercive field temperature dependence method was used to determine the blocking temperature distribution of the particles by considering the temperature dependence of anisotropy and magnetization and the random anisotropy axis configuration. The data allowed one to estimate the room-temperature quasi-static superparamagnetic diameter, which was found to be lower than the theoretical value. Magnetic hyperthermia experiments of the magnetic nanocolloids at 522 kHz indicated that soft nanomagnets heat more efficiently at clinically relevant conditions. The heating performance was found to decrease at the higher fraction of blocked nanoparticles. For instance, samples with similar size distribution and mean diameter of 10 nm, at a field amplitude of only 120 Oe (9.6 kA m–1), showed a decrease of specific...

Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron holography (HR-DFEH) were performed to investigate the composition of a polar [0001] GaN/AlxGa1 − xN/InyGa1 − yN light emitting diode. In particular, the III-site fraction of both AlxGa1 − xN and InyGa1 − yN alloys was studied adopting a comparative approach. HR-DFEH allows mapping the projected strain with a subnanometer spatial resolution which is used for the calculation of the two-dimensional alloy composition distribution. APT provides three-dimensional alloys composition distribution with a nanometer spatial resolution. However, here we reveal that important inaccuracies affect local composition measurements. A Ga-poor composition is obtained in high DC-electric field regions. Moreover, such inaccuracies may be locally enhanced where the [0001] pole intersects the surface of the analyzed specimen, leading to a lower fraction of Ga measured. III-site fractions closer to the nominal values were measured at low field conditions. Ga loss is thought to be due to preferential DC field induced evaporation of Ga ions between laser pulses. This is explained in terms of formation of a metallic layer on the tip surface during APT analysis, where weak Ga-Ga bonds are formed, promoting the loss of Ga at high field conditions.