The effect of deposition conditions on the crystal structure and optical and electrical properties of Indium Nitride (InN) films deposited by modified reactive evaporation have been investigated. Substrates are kept at the electrode and thereby subjected to low-energy nitrogen ion bombardment.The effects of pressure on the structural, morphological, and optical properties of the films on Si (100) and glass substrates are investigated by X-ray diffraction analysis, scanning electron microscopy, energy-dispersive X-ray analysis, and UV–Vis transmittance, Photoluminescence, and Raman spectroscopy. All the films show a preferential c-axis orientation with c- lattice constant found decreasing up to 8 mTorr. The bandgap measured from the photoluminescence and optical absorption method shows similar characteristics. Raman spectra reveal broad and asymmetric line shapes for E2(high) and A1(LO) modesdue to the small phonon correlation length. The Indium oxide phase was detected for the film grown at 25 mTorr which alsodeteriorates its electrical and optical properties.