Low Dark Current Research Articles

Mass‐Producible Self‐Powered Solar‐Blind Ultraviolet Photodetector Based on Graphene/β‐Ga2O3 Heterojunction Processed by Wet Transfer

AbstractGraphene electrodes draw considerable attention in solar‐blind ultraviolet (SBUV) detection owing to their unique features including high ultraviolet (UV) transparency and superior intrinsic carrier mobilities. However, their adoption comes with challenges, as the most commonly used preparation technique, i.e., the dry transfer process, is challenging to achieve mass production. In this work, graphene/β‐Ga2O3 heterojunction photodetectors processed by wet transfer are reported. Benefiting from the UV‐transparent electrode and heterojunction, both the responsivity and response speed are improved. The characteristic of the graphene/β‐Ga2O3 interface is analyzed by the current–voltage (I–V) and capacitance–voltage (C–V) curves, featuring a high‐quality junction. Operated at zero bias, the photodetector exhibits a low dark current of less than 1 pA and a high response speed of less than 1 ms. An excellent UV‐C/visible rejection ratio is also achieved. Importantly, the photodetector performs excellent reproducibility and performance stability. This results provide a new perspective for the mass production of graphene/Ga2O3 integrated devices, enabling high‐performance Ga2O3 photodetector arrays.

New paradigms of 2D layered material self-driven photodetectors.

By virtue of the high carrier mobility, diverse electronic band structures, excellent electrostatic tunability, easy integration, and strong light-harvesting capability, 2D layered materials (2DLMs) have emerged as compelling contenders in the realm of photodetection and ushered in a new era of optoelectronic industry. In contrast to powered devices, self-driven photodetectors boast a wealth of advantages, notably low dark current, superior signal-to-noise ratio, low energy consumption, and exceptional compactness. Nevertheless, the construction of self-driven 2DLM photodetectors based on traditional p-n, homo-type, or Schottky heterojunctions, predominantly adopting a vertical configuration, confronts insurmountable dilemmas such as intricate fabrication procedures, sophisticated equipment, and formidable interface issues. In recent years, worldwide researchers have been devoted to pursuing exceptional strategies aimed at achieving the self-driven characteristics. This comprehensive review offers a methodical survey of the emergent paradigms toward self-driven photodetectors constructed from 2DLMs. Firstly, the burgeoning approaches employed to realize diverse self-driven 2DLM photodetectors are compiled, encompassing strategies such as strain modulation, thickness tailoring, structural engineering, asymmetric ferroelectric gating, asymmetric contacts (including work function, contact length, and contact area), ferroelectricity-enabled bulk photovoltaic effect, asymmetric optical antennas, among others, with a keen eye on the fundamental physical mechanisms that underpin them. Subsequently, the prevalent challenges within this research landscape are outlined, and the corresponding potential approaches for overcoming these obstacles are proposed. On the whole, this review highlights new device engineering avenues for the implementation of bias-free, high-performance, and highly integrated 2DLM optoelectronic devices.

Room temperature mid-wave infrared guided mode resonance InAsSb photodetectors

We demonstrate room temperature operation of mid-wave infrared photodetectors leveraging a guided mode resonance architecture and bulk alloy InAsSb absorbers. Room temperature operation with low dark current is achieved by using detector structures with ultra-thin (150, 250 nm) absorbers leveraging the strong confinement enabled by the guided mode architecture. Devices with 1D and 2D grating arrays are fabricated and characterized, and compared to unpatterned detector devices. We see enhancement in the detectors’ optical response associated with coupling to both TE- and TM-polarized guided modes and good agreement between experimental and theoretically-predicted behavior. We show strong enhancement for unpolarized light incident on 2D grating arrays, with a broader spectral response than observed for polarized light incident upon 1D grating GMR detectors. The bulk InAsSb detectors presented in this work offer enhanced performance at room temperature for a range of imaging and sensing applications.

Ultra-high PDCR(>109) of vacuum-UV photodetector based on Al-doped Ga2O3 microbelts

Al-doped Ga2O3microbelts with widths ranging from 20 to 154μm and lengths up to 2 mm were grown using carbothermal reduction. Based on these ultra-wide microbelts, single-microbelt (37μm wide) and double-microbelts(38μm/42μm wide) metal-semiconductor-metal photoconductive ultraviolet (UV) detectors PDs were fabricated and their optoelectronic performances were investigated at Vacuum-UV (VUV) wavelengths of 185 nm. Under irradiation of 185 nm, the Al-doped Ga2O3PD has a very-high photocurrent (Iph) of 192.07μA and extremely low dark current (Id) of 156 fA at 10 V, and presents a ultra-high light-to-dark current ratio of 1.23 × 109. The responsivity (R), external quantum efficiency (EQE), and detectivity (D*) of the double-microbelts detector device were 1920 A W-1, 9.36 × 105%, and 8.6 × 1016Jones, respectively. Since the bandgap of the Al-doped microbelts becomes wider, and the fabricated detector has weaker sensitivity to radiation in the 254/365 nm wavelengths. Compared with the 254 nm and 365 nm UV cases, the devices under 185 nm VUV show the excellent high selectivity ratios of 1.47 × 106and 1.7× 107, respectively. This paper should provide a new insight on the VUV photodetectors utilizing Ga2O3microbelts.

Intrinsic charge manipulation for solution‐processed organic photodetectors with high sensitivity and fast response

AbstractCharge manipulation is crucial in optoelectronic devices. The unoptimized interfacial charge injection/extraction in solution‐processed bulk‐heterojunction (BHJ) organic photodetectors (OPDs) presents significant challenges in achieving high detectivity and fast response speed. Here, we first develop an approach for intrinsic charge manipulation induced by molecularly engineered donors to block electron injection and facilitate hole extraction between the indium tin oxide (ITO) transparent anode and the photoactive layer. By utilizing a polymer donor with 3,4‐ethylenedioxythiophene (EDOT) as the conjugated side chain, a polymer‐rich layer forms spontaneously on the ITO substrate due to the increased oxygen interactions between ITO and EDOT. This results in electron‐blocking‐layer (EBL)‐free devices with lower dark current and noise without a reduction in responsivity compared to control devices. As a result, the EBL‐free devices exhibit a peak specific detectivity of 2.36 × 1013 Jones at 950 nm and achieve a −3 dB bandwidth of 30 MHz under −1 V. Enhanced stability is also observed compared to the devices with poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). This work demonstrates a new method to intrinsically manipulate charge injection in BHJ photoactive layers, enabling the fabrication of solution‐processed EBL‐free OPDs with high sensitivity, rapid response, and good stability.

Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator.

In this study, molecular beam epitaxial growth of strain-driven three-dimensional self-assembled Ge/GeSi islands on silicon-on-insulator (SOI) substrates, along with their optical and photodetection characteristics, have been demonstrated. The as-grown islands exhibit a bimodal size distribution, consisting of both Ge and GeSi alloy islands, and show significant photoluminescence (PL) emission at room temperature, specifically near optical communication wavelengths. Additionally, these samples were used to fabricate a Ge/GeSi islands/Si nanowire (NW) based phototransistor using a typical e-beam lithography process. The fabricated device exhibited broadband photoresponse characteristics, spanning a wide wavelength range (300-1600 nm) coupled with superior photodetection characteristics and relatively low dark current (~ tens of pA). The remarkable photoresponsivity of the fabricated device, with a peak value of ~11.4 A/W (λ ~ 900 nm) in the near-infrared (NIR) region and ~ 1.36 A/W (λ ~ 1500 nm) in the short-wave infrared (SWIR) region, is a direct result of the photoconductive gain exceeding unity. The room-temperature optical emission and outstanding photodetection performance, covering a wide spectral range from the visible to the SWIR region, showcased by the single layer of Ge/GeSi islands on SOI substrate, highlight their potential towards advanced applications in broadband infrared Si-photonics and imaging. These capabilities make them highly promising for cutting-edge applications compatible with complementary metal-oxide-semiconductor (CMOS) technology.

4H-SiC ultraviolet photodetector array with vertical MSM configuration

Abstract The increasing demand for ultraviolet (UV) imaging in extreme conditions, such as high temperatures and strong radiation, has spurred advancements in UV photodetector arrays. Traditional metal-semiconductor- metal (MSM) 4H-SiC UV photodetector array, with their planar structure and M×N electrode connections, face challenges in circuit design. Our research utilizes a vertical design for building the photodetector array, reducing the connections to just M+N, thereby simplifying the circuit design and signal processing. Utilizing semi-insulating 4H-SiC wafer and TiN electrodes, we developed an 8×8 vertical MSM photodetector array. Tested under a 365 nm light source at 10.5 mW/cm2 and a 5V bias, the array demonstrated low dark currents, high contrasts under illumination, and a 100% operational yield. With average photo current and dark currents of 1.56×10-8 A and 2.94×10-13 A, respectively, the average photo-to-dark current ratio (PDCR) exceeded 5×104 Our design effectively minimized sneak path currents and achieved a low crosstalk rate of 0.46%, enabling the capture of clear, high-contrast images. This marks a significant advancement in the application of MSM 4H-SiC UV photodetectors for imaging in extreme conditions.

Unveiling Superior Solar-Blind Photodetection with a NiO/ZnGa2O4 Heterojunction Diode.

This investigation presents a self-powered, solar-blind photodetector utilizing a low-temperature fabricated crystalline NiO/ZnGa2O4 heterojunction with a staggered type-II band alignment. The device leverages the pyrophototronic effect (PPE), combining the photoelectric effect in the p-n junction and the pyroelectric effect in the non-centrosymmetric ZnGa2O4 crystal. This synergistic effect enhances the photodetector's performance parameters, thereby outperforming traditional solar-blind photodetectors. The device demonstrates an extremely low dark current of 5.39 fA, a high responsivity of 88 mA/W, and a very high specific detectivity of 2.03 × 1014 Jones under 246 nm light irradiation at 0 V bias. Significantly, due to the PPE, the impact demonstrates a much-enhanced transient response when tested under various light intensities, ranging from 18 to 122 μW/cm2. The photodetector shows a high responsivity of 338 A/W and an outstanding detectivity of 7.1 × 1018 Jones with an applied voltage of -13 V, showing its ability to detect weak signals. Single-crystalline ZnGa2O4 fabricated by MOCVD exhibits significant absorption of deep UV light, and the heterojunction's type-II band alignment with NiO is responsible for its exceptional self-powered pyrophotoelectric detecting and rectifying capabilities.

Surface-Reconstructed InAs Colloidal Nanorod Quantum Dots for Efficient Deep-Shortwave Infrared Emission and Photodetection.

Shortwave infrared (SWIR) light emitters and detectors are crucial in numerous applications. Conventionally, SWIR devices rely on epitaxially grown narrow bandgap semiconductors, such as InGaAs, which are expensive to fabricate and difficult to integrate with silicon complementary metal-oxide-semiconductors (CMOS). Colloidal quantum dots (CQDs) have emerged as low-cost alternatives to epitaxially grown semiconductors, offering integration with CMOS through solution-processing methods. However, the predominant SWIR-active CQD systems rely on heavy-metal-containing compositions (PbS and HgTe), hindering the adoption of CQD SWIR technology. InAs CQDs are promising substitutes in SWIR applications. However, synthesizing SWIR-active InAs CQDs is challenging, often constraining them to the visible or near-infrared regions. To achieve SWIR bandgaps, large InAs CQDs are typically required; such CQDs are prone to having surface traps that quench photogenerated charge carriers, adversely affecting device performance. Here, we report a two-step synthesis of surface-passivated SWIR-active InAs/ZnSe core/shell colloidal nanorod quantum dots (CNQDs). These surface-passivated CNQDs are highly emissive and tunable over the entire technologically important region (1200-1800 nm) of the SWIR window with photoluminescence quantum yields as high as 60%. Using these SWIR-active InAs/ZnSe CNQDs, we demonstrated an SWIR-active InAs CQD photodetector, achieving a record high external quantum efficiency of ∼15% at ∼1450 nm and a low dark current of ∼10-2 mA/cm2.

Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product

Abstract Avalanche photodiode (APD) is commonly used as a receiver in optical communication and light detection and ranging (LIDAR), offering highly sensitive photodetection capabilities. A key strategy for improving the gain-bandwidth product (GBP) of the APD involves the optimization of the electric field distribution using the charge layer. However, traditional modulation methods to adjust the carrier transport and avalanche process using the charge layer often face challenges (inefficiency and non-uniformity). An InGaAs/Si APD based on the wafer bonding method with a GBP up to 1.03 terahertz (THz) is reported theoretically in this work. The charge layer and groove rings are inserted at the InGaAs/Si bonded interface to modulate the electric field in the APD effectively, demonstrating low dark current and reduced avalanche bias of the device. This approach induces a dramatic and rapid variation of the electric field at the interface while reducing the gradient of the electric field in the multiplication layer. Additionally, the indirect impact of the groove ring on mitigating the adverse effects of the lattice mismatch is pointed out, and the optimal doping concentration range of the charge layer is identified to enhance the modulation effect of the electric field for stronger impact ionization. These findings provide valuable insights for the next-generation InGaAs/Si APDs with high GBP for high-speed data transmission.

Simultaneously achieving high sensitivity, low dark current and low detection limits in anti-perovskites towards X-ray detection

Simultaneously achieving high sensitivity, low dark current and low detection limits in anti-perovskites towards X-ray detection

Interfacial modification of CuO/Ga2O3 by plasmonic Pt for high performance self-powered solar-blind UV photodetector

Applications for solar-blind photodetectors (PDs) vary widely and include space communications, ozone monitoring, and more. In this study, pulsed laser deposition (PLD) and ion sputtering were employed to develop an unusual self-powered deep ultraviolet (UV) photodetector based on CuO/Ga2O3 with a Pt nanoparticles (NPs) interface. The Pt NPs interface transforms the device design from heterojunction to Schottky junction. The device features a low dark current of 83.2 fA and performs a high photo-to-dark current (Iphoto/Idark) ratio of 1.72 × 104, a specific detectivity (D*) of 9.98 × 1011 Jones, and a quick decay time of 56 ms upon 254 nm UV light at 196.5 μW/cm2 without any power supply. The CuO/Pt/Ga2O3 Schottky junction-based device outperforms the CuO/Ga2O3 heterojunction-based device in terms of detection capabilities in both biased and non-biased settings. This is explained by the Schottky barrier creation mechanism with both Ga2O3 and CuO films, as well as how the plasmon resonance effect (PR effect) balances the barrier on the Ga2O3 side. Furthermore, Pt NPs serve as a potential well, offering an additional recombination channel that accelerates the decay process when the light is turned off. Our findings pave the way for more optoelectronic uses of Ga2O3-based solar-blind UV photodetectors in the future.

High-Sensitivity and Fast-Response Photomultiplication Type Photodetectors Based on Quasi-2D Perovskite Films for Weak-Light Detection.

Photovoltaic photodiodes often face challenges in effectively harvesting electrical signals, especially when detecting faint light. In contrast, photomultiplication type photodetectors (PM-PDs) are renowned for their exceptional sensitivity to weak signals. Here, an advanced PM-PD is introduced based on quasi 2D Ruddlesden-Popper (Q-2D RP) perovskites, optimized for weak light detection at minimal operating voltages. The abundant traps at the Q-2D RP surface capture charge carriers, inducing a trap-assisted tunneling mechanism that leads to the photomultiplication (PM) effect. Deep-lying trap states within the Q-2D RP bulk accelerate charge carrier recombination, resulting in an outstanding rise/fall time of 1.14/1.72 µs for the PM-PDs. The PM-PD achieves a remarkable response level of up to 45.89 AW-1 and an extraordinary external quantum efficiency of 14400% at -1V under an illumination of 1 µWcm- 2. The intrinsic high resistance of the Q-2D perovskite results in a low dark current, enabling an impressive detectivity of 4.23 × 1012 Jones based on noise current at -1V. Furthermore, the practical application of PM-PDs has been demonstrated in weak-light, high-rate communication systems. These findings confirm the significant potential of PM-PDs based on Q-2D perovskites for weak light detection and suggest new directions for developing low-power, high-performance PM-PDs for future applications.

Improved-Performance Amorphous Ga2O3 Photodetectors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

Ga2O3 has received increasing interest for its potential in various applications relating to solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based photodetectors presents a challenge due to the intrinsic conductive mechanism of Ga2O3 films. In this work, we fabricated amorphous Ga2O3 (a-Ga2O3) metal–semiconductor–metal photodetectors through capacitive coupled plasma assisted magnetron sputtering at room temperature. Substantial enhancement in the responsivity is attained by regulating the capacitance-coupled plasma power during the deposition of a-Ga2O3. The proposed plasma energy generated by capacitive coupled plasma (CCP) effectively improved the disorder of amorphous Ga2O3 films. The results of X-ray photoelectron spectroscopy (XPS) and current-voltage tests demonstrate that the additional plasma introduced during the sputtering effectively adjust the concentration of oxygen vacancy effectively, exhibiting a trade-off effect on the performance of a-Ga2O3 photodetectors. The best overall performance of a-Ga2O3 photodetectors exhibits a high responsivity of 30.59 A/W, a low dark current of 4.18 × 10−11, and a decay time of 0.12 s. Our results demonstrate that the introduction of capacitive coupled plasma during deposition could be a potential approach for modifying the performance of photodetectors.

Investigation of low temperature amorphous (InxGa1−x)2O3 films modulated by indium content for optimization in solar-blind photodetector

In this study, bandgap engineering of amorphous (InxGa1-x)2O3 alloy films fabricated at room temperature using pulsed laser deposition and alloy targets with different indium contents from 0 % to 50 % have been investigated. The effect of indium content on the characteristics of (InxGa1-x)2O3 films and the performance of metal–semiconductor-metal solar-blind photodetectors have been explored in detail. The moderate number of indium atoms introduced into Ga2O3 can obtain a flat surface morphology and adjusted bandgap to enhance the performance of solar-blind photodetector. When the excessive indium atoms were incorporated into the film, the obviously In enriched (InxGa1-x)2O3 alloy nano-clusters are observed on the film surface despite of the low growth temperature. It can be attributed to the segregation phenomenon because of the solid solubility limitation for indium in Ga2O3. Both of dark current and photocurrent of (InxGa1-x)2O3 photodetector increase with the incremental indium content mainly attributed to enhanced oxygen deficiency. As a result, the solar-blind photodetector can achieve an optimal performance using a balanced indium content of 20 % with an extremely low dark current of 4.4 × 10-12 A, a responsivity of 10.8 mA/W, a substantial on/off current ratio of 1.5 × 104 and a short rise/decay time of 0.33 s/0.54 s.

Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection

AbstractOrganic–inorganic hybrid halide perovskites have emerged as the most promising optoelectronic materials for next‐generation solution‐processed devices, primarily attributed to their distinctive properties such as cost‐effectiveness, facile fabrication process, high light absorption coefficient, tunable bandgap, and relatively high charge carrier mobility. Nevertheless, the presence of Pb elements is inevitable in most high‐performance perovskite optoelectronic devices, posing environmental pollution concerns and impeding their commercialization. In this study, two novel non‐toxic bismuth‐ and antimony‐based perovskite materials with environmentally conscious approaches are developed. Their structures and optoelectronic properties have been systematically characterized. Subsequently, photoconductive‐ and photodiode‐type photodetectors are designed and fabricated. Notably, the photodiode configuration exhibits exceptionally low dark current and noise, superior detection sensitivity, fast response speed, and good device stability. Owing to these superior performance metrics, the devices demonstrate great potential for real applications. Furthermore, this study furnishes a theoretical framework and design perspectives for the solution‐processed semiconductor materials.

Impact of the Ge-Si interfacial barrier on the temperature-dependent performance of PureGaB Ge-on-Si p + n photodiodes

A temperature-dependent study of the near-infrared (NIR) responsivity of Ge-on-Si photodiodes is presented. The diodes, formed as n-Ge islands within oxide windows on n-Si and capped with Ga and B layers (PureGaB), exhibit low dark current of ∼2 × 10−13 A/µm2 and broadband responsivity. Temperature-dependent measurements reveal an inherent potential barrier at the low-doped n-Ge on the n-Si heterointerface. This leads to a decrease in responsivity with decreasing temperatures for wavelengths above 1100 nm. The Al-migration process along the Ge-Si interface, associated with the sidewall passivation and found to be a means of reducing dark current, increases the barrier height. Irrespective of the barrier height, room-temperature responsivity is fully recovered by applying a reverse bias to lower the interface barrier. In the devices with the highest barrier, the responsivity at 1310 nm increased from 4.8 to 164 mA/W, at 0 V and 18 V reverse bias, respectively. An additional increase in maximum responsivity at 1550 nm is attributed to Al-sidewall passivation leading to a measured responsivity of 126.4 mA/W at 18 V reverse bias.

High‐Performance Single‐Microplate Perovskite Photodetectors Based on Polyvinyl Alcohol Filled Planar Electrodes for Weak‐Light Imaging and Pixel Integration

AbstractPhotoconductors featuring an individual micro/nano‐crystal as the photoactive channel hold the great promise for next‐generation integrated optoelectronics. Meanwhile, the gain aiming for signal amplification without an extra amplifier, the fast response for fast data transfer, and low dark current for weak signal acquisition are highly desirable in integrated optoelectronics, but are inherent trade‐off in traditional photoconductors. Herein, the study demonstrates a single‐microplate MAPbI3 photoconductor based on polyvinyl alcohol‐filled planar electrodes that can simultaneously achieve excellent performance on these parameters. The superior performance can be attributed to the exquisite design of filling the device channel gap with polyvinyl alcohol. This deep‐work‐function transparent polyvinyl alcohol can not only passivate surface defects of the perovskite microplate by hydrogen bonding, but also form a heterojunction with top perovskites to induce a depleted channel. Resultant single‐microplate photodetectors exhibit exceptional performance characteristics including ultra‐low noise‐equivalent power of 0.19 fW Hz−1/2, high specific detectivity of 3.68 × 1014 Jones, fast response of 3.2 µs, high EQE‐bandwidth over 107 Hz, as well as excellent stability. More importantly, single‐microplate MAPbI3 photoconductors demonstrate ultra‐weak‐light imaging ability surpassing silicon counterparts. Furthermore, the successful integration of their microplate pixels showcases the promising prospect for integrated optoelectronics.

Photovoltage-Driven Photoconductor Based on Horizontal p-n-p Junction.

The photoconductive gain theory demonstrates that the photoconductive gain is related to the ratio of carrier lifetime to carrier transit time. Theoretically, to achieve higher gain, one can either prolong the carrier lifetime or select materials with high mobility to shorten the transit time. However, the former slows the response speed of the device, while the latter increases the dark current and degrades device sensitivity. To address this challenge, a horizontal p-n-p junction-based photoconductor is proposed in this work. This device utilizes the n-region as the charge transport channel, with the charge transport direction perpendicular to the p-n-p junction. This design offers two advantages: (i) the channel is depleted by the space charge layer generated by the p and n regions, enabling the device to maintain a low dark current. (ii) The photovoltage generated in the p-n junction upon light absorption can compress the space charge layer and expand the conductive path in the n-region, enabling the device to achieve high gain and responsivity without relying on long carrier lifetimes. By adopting this device structure design, a balance between responsivity, dark current, and response speed is achieved, offering a new approach to designing high-performance photodetectors based on both traditional materials and emerging nanomaterials.

Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga2O3 Phototransistors.

We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet (DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold voltage (VT) switches between negative and positive depending on the β-Ga2O3 channel thickness and doping concentration. Channel depletion and Ga diffusion during manufacturing significantly influence device characteristics, as validated through computer-aided design (TCAD) simulations, which agree with the experimental results. We achieved enhancement-mode (e-mode) operation in <10 nm-thick channels, enabling a zero VG to achieve a low dark current (1.84 pA) in a fully depleted equilibrium. Quantum confinement in thin β-Ga2O3 layers enhances UV detection (down to 210 nm) by widening the band gap. Compared with bulk materials, dimensionally constrained optical absorption reduces electron-phonon interactions and phonon scattering, leading to faster optical responses. Decreasing β-Ga2O3 channel thickness reduces VT and VG, enhancing power efficiency, dark current, and the photo-to-dark current ratio under dark and illuminated conditions. These results can guide the fabrication of tailored Ga2O3-based DUV phototransistors.