Low Breakdown Research Articles

Triple-Stacked FET Distributed Power Amplifier Using 28 nm CMOS Process

A broadband 28 nm complementary metal–oxide–semiconductor (CMOS) power amplifier was implemented using a distributed amplification design. To develop a model library for high-frequency design, various test patterns for active and passive elements were fabricated and compared through measurements. As a result, a symmetrical n-channel field-effect transistor (NFET) was used as the active device, and a co-planar waveguide (CPW) with floating bottom metal layers was chosen as the transmission line for the passive element. These choices demonstrated superior radio frequency (RF) characteristics at high frequencies compared to other device candidates. Furthermore, to address the low breakdown voltage of CMOS, a triple-stacked FET structure was designed as the gain cell of the distributed power amplifier (DPA). The fabricated DPA showed a maximum small-signal gain of 22 dB and a minimum of 10 dB from DC to 56 GHz, with a maximum saturated output power of 20 dBm and a minimum of 13 dBm from 1 to 39 GHz. Notably, these results were achieved on the first attempt by designing solely based on measurement data from the test patterns.

Developing a geomechanical model to predict breakdown pressure in a vertical borehole using failure analysis: a case study

Breakdown is an important process in geomechanics; a very complex process in hydraulic fracturing which has been the subject of extensive research in the literature. There exist several models in the literature for predicting the breakdown pressure. In this research, the breakdown pressure for hydraulic fracturing in a vertical borehole was modeled using 2D and 3D failure analysis. In the geomechanical model constructed in this case study, elastic moduli were obtained using petrophysical data as well as data extracted from core analysis. The in-situ stress state of the reservoir was obtained by poroelastic horizontal strain model and was then validated by field data. To test the accuracy of the horizontal strain model, several models were used to obtain the minimum horizontals stress. At the end, the induced principal stresses inside the borehole were modeled by Kirch Equations. Four failure criteria, namely Mohr–Coulomb, 2D Hoek–Brown, Hubbert-Willis and 3D Mogi-Coulomb were used to obtain the breakdown pressure for the target reservoir. Based on the prediction results of these failure criteria, it was obtained that 2D Hoek–Brown, Hubbert-Willis, and 3D Mogi-Coulomb criteria resulted in seemingly unrealistic breakdown pressures with respect to the minimum horizontal stress gradient. The Mohr–Coulomb criterion produced lower breakdown pressure gradients, yet closer to the minimum horizontal stress values, even though it neglects the effect of intermediate stress.

Research of Silicon and Zinc Oxide

As electronics develops, zinc becomes more and more useful and electronics producers consume more and more silicon because of it is abundant, it has a mature processing technology and it has a high carrier mobility. Those advantages made silicon perfect for integrated circuits. However, in some cases, silicon is no longer the best choice. Despite silicon’s advantages, there are problems for silicon. For example low breakdown voltage, low thermal conductivity and indirect band gap. Although silicon is still the most commonly used semiconductor, another type of semiconductor, zinc oxide starts to become more and more important in electronics. However, the two materials are used differently. This paper aims to provide the various properties of silicon and zinc oxide, and explain the reasons for their applications in electronics. The two materials are indispensable although they have a lot of disadvantages. Engineers must carefully consider the advantages and limitations of each material for specific applications to make optimal material selections.

Comparison of Structure and Physicochemical Properties of Starches from Hybrid Foxtail Millets and Their Parental Lines

The structure and physicochemical properties of starch were important factors to determine the quality of foxtail millet. While hybrid foxtail millet has made greater progress in yield, it has made slower progress in quality than conventional foxtail millet with a more complex genetic base, which was jointly influenced by the parents. However, there were no reports on the comparison of the starch structure and physicochemical properties of hybrid foxtail millets and their parents. In this study, the amylose content, morphology structure, granule size distribution, X-ray diffraction, short-range ordered structure, pasting properties, and thermal characteristics of starches derived from Changzagu 466 (466), Changzagu 333 (333), Changzagu 2922 (2922) and their parent materials were analyzed. The results showed that compared with male parents, the starches from three hybrid foxtail millets and their female parents had larger average particle size, d(0.1), d(0.5), and gelatinization enthalpy (ΔH), while the amylose content values of three hybrid foxtail millets were 26.0%, 28.8%, and 28.9%, which were between the parents (25.8~27.1%, 25.4~28.8%, and 23.6~29.5%), with conclusion temperature (Tc) being higher than the parents and having a lower breakdown viscosity. The peak viscosity of Changzagu 466 (466) and Changzagu 2922 (2922) was 5235.5 cP and 5190.8 cP, respectively, lower than that of their parents (5321.0~6006.0 cP and 5257.0~5580.7 cP), while the peak viscosity of Changzagu 333 (333) was 5473.8 cP, falling between the parental values (5337.5~5639.5 cP). The cluster analysis results showed that the starch structure and physicochemical properties of hybrid foxtail millet were significantly different from those of female parents, which were mainly influenced by male parents. The findings of this study will establish a theoretical foundation for the enhancement and innovation of high-quality foxtail millet germplasm resources, as well as the development of high-quality hybrid foxtail millet combinations.

Enhanced energy storage performance in NBT-based MLCCs via cooperative optimization of polarization and grain alignment

Dielectric ceramics possess a unique competitive advantage in electronic systems due to their high-power density and excellent reliability. Na1/2Bi1/2TiO3-based ceramics, one type of extensively studied energy storage dielectric, however, often experience A-site element volatilization and Ti4+ reduction during high-temperature sintering. These issues may result in increased energy loss, reduced polarization and low dielectric breakdown electric field, ultimately making it challenging to achieve both high energy storage density and efficiency. To address these issues, we introduce a synergistic optimization strategy that combine polarization engineering and grain alignment engineering. First principles calculations and experimental analyses show that the doping of Mn2+ can suppress the reduction of Ti4+ in Na1/2Bi1/2TiO3-based ceramics and enhance ion off-centering displacements, thereby reducing energy loss and improving polarization. In addition, we prepared multilayer ceramic capacitors with grains oriented along the <111> direction using the template grain growth method. This approach effectively reduces electric-field-induced strain by 37% and markedly enhances breakdown electric field by 42% when compared with nontextured counterpart. As a result of this comprehensive strategy, <111 >-textured Na1/2Bi1/2TiO3-based multilayer ceramic capacitors achieve an ultra-high energy density of 15.7 J·cm−3 and an excellent efficiency beyond 95% at 850 kV·cm−1, exhibiting a superior overall energy storage performance.

Improving the Energy Storage Performance in Bi0.5Na0.5TiO3-Based Ceramics by Combining Relaxor and Antiferroelectric Properties.

Ceramic capacitors have received great attention for use in pulse power systems owing to their ultra-fast charge-discharge rate, good temperature stability, and excellent fatigue resistance. However, the low energy storage density and low breakdown strength (BDS) of ceramic capacitors limit the practical applications of energy storage technologies. In this work, we present a series of relaxor ferroelectric ceramics (1-x) [0.94 Bi0.5Na0.5TiO3 -0.06BaTiO3]- x Sr0.7Bi0.2TiO3 (1-x BNT-BT- x SBT; x = 0, 0.20, 0.225, 0.25, 0.275 and 0.30) with improved energy storage performances by combining relaxor and antiferroelectric properties. XRD, Raman spectra, and SEM characterizations of BNT-BT-SBT ceramics revealed a rhombohedral-tetragonal phase, highly dynamic polar nanoregions, and a reduction in grain size with a homogeneous and dense microstructure, respectively. A high dielectric constant of 1654 at 1 kHz and low remnant polarization of 1.39 µC/cm2 were obtained with the addition of SBT for x = 0.275; these are beneficial for improving energy storage performance. The diffuse phase transition of these ceramics displays relaxor behavior, which is improved with SBT and confirmed by modified the Curie-Weiss law. The combining relaxor and antiferroelectric properties with fine grain size by the incorporation of SBT enables an enhanced maximum polarization of a minimized P-E loop, leading to an improved BDS. As a result, a high recoverable energy density Wrec of 1.02 J/cm3 and a high energy efficiency η of 75.98% at 89 kV/cm were achieved for an optimum composition of 0.725 [0.94BNT-0.06BT]-0.275 SBT. These results demonstrate that BNT-based relaxor ferroelectric ceramics are good candidates for next-generation ceramic capacitors and offer a potential strategy for exploiting novel high-performance ceramic materials.

Evolution of ferroelectric and piezoelectric properties of BiFeO3 ceramics doped with lanthanum and zirconium

In this study, we performed cation substitutions at Bi-site (La3+) and Fe-site (Zr4+) to investigate their possible benefit for the ferroelectric properties of BiFeO3 ceramics. The cations with higher valence (Zr4+) ought to suppress the formation of structural defects during syntheses, such as oxygen vacancies and Fe2+. These defects are responsible for high leakage currents and low breakdown voltages characteristic of the pure BiFeO3. However, doping only with Zr did not improve the ferroelectric properties of bismuth ferrite. These samples were unable to persist electric fields above 30 kV/cm. On the other hand, the increase in lanthanum concentration resulted in improved ferroelectric and piezoelectric properties of the samples, sustaining electric fields above 100 kV/cm. Among the investigated samples, the highest remnant polarization of 24 μC/cm2 and piezoelectric coefficient (d33) of 34 pC/N reached Bi0.85La0.15FeO3 sample at 160 kV/cm. The share of non-ferroelectric contribution to the total polarization of this sample was the lowest (∼ 11 %). When it comes to the co-doped samples, the addition of Zr transformed the behavior from leaky ferroelectric to predominantly leaky dielectric. It indicated that doping with La significantly improved the ferroelectric properties of bismuth ferrite ceramics. In contrast, even a low Zr concentration of 1 mol% could outbalance the influence of much larger La concentrations (10 and 15 mol%).

Effect of the Autoclaving-Cooling Cycle on the Chemical, Morphological, Color, and Pasting Properties of Foxtail Millet Starch.

This study investigated the effect of the autoclaving-cooling (AC) cycle and the starch-to-water ratio on the chemical, morphological, color, and pasting properties of foxtail millet starch to improve its utilization in the food industry. Starch suspensions were prepared using different starch-to-water ratios (i.e., 1:1 and 1:4), with one to three AC cycles for each ratio. Subsequently, the chemical, morphological, color, and pasting properties of native and autoclaved-cooled foxtail millet starch (ACFS) were determined. The results showed that ACFS had higher overall resistant starch (RS) content than native starch. AC treatment reduced the lightness and whiteness index, gelatinization time, and pasting temperature while increasing particle sizes with irregular shapes and surfaces. Starch treated with distilled water at a 1:1 ratio with two AC cycles (1:1-2C) exhibited the highest amylose, starch, and RS contents with stable pasting properties compared with that in other AC treatments. Pasting stability was indicated by the low breakdown viscosity and high trough and final viscosity. The findings suggest that ACFS treated with 1:1-2C could be a stabilizer and functional food.

Preparation of two–dimensional gradient fillers reinforced polymer nanocomposites for high–performance energy storage of dielectric capacitors

The serious interfacial issue between the inorganic filler and the organic matrix in the dielectric nanocomposite results in a low electric field breakdown strength (Eb) and low energy density (Ue). In this work, novel KxNa1–xNbO3@ZrO2 (KNN@ZO) nanosheets (NSs) were prepared by coating highly insulated ZO on the ferroelectric two–dimensional (2D) KNN NSs via a chemical precipitation method. As fillers, the KNN@ZO significantly improved the energy storage performances of poly (vinylidene fluoride) (PVDF)–polymethyl methacrylate (PMMA) blends. The highly insulated ZO shell restricts the carrier migration at the filler/polymer interface, thereby reducing the local electric field distortion. By sandwich structural design, a high Ue of 19.8 J/cm3, with a large difference of electrical displacement (8.5 μC/cm2), is measured in KNN@ZO/PVDF–PMMA with 5 % filler content at 528 MV/m. According to the finite element simulation, the 2D morphology and gradient structure can enhance the electric field distribution, and therefore effectively increase the Eb of nanocomposites. The results indicate that the 2D core–shell NSs fillers with gradient dielectric constant represent an effective approach to improve energy storage performance of the polymer–based nanocomposites.

Improving the electromechanical deformability of MWCNT/silicone composites via encapsulating MWCNT with polyphenols and multilayered structure regulation

AbstractSilicone rubber (SR) is an ideal dielectric elastomer substrate due to its excellent flexibility and fast response speed. However, the innate low dielectric permittivity (ε) of SR generally requires a rather high driving voltage that restricts its widespread application. Typical attempts to increase ε of SR usually deteriorate either its flexibility or electrical stability. Herein, conductive multi‐walled carbon nanotube (MWCNT) were first surface modified with polyphenols (PNs) (MWCNT@PNs), aiming to facilitate its well dispersion within SR matrix, which may maintain the softness and electrical stability of SR via suppressing concentrated physical crosslinking and local leakage current flow. Then, five‐layered MWCNT@PNs/SR composites were prepared with the outer two insulating layers of SR while middle three dielectric layers of MWCNT@PNs filled SR. The multilayered structure further hindered the formation of conductive pathways through the composites, promising a high breakdown strength of the composites. Therefore, the multilayered MWCNT@PNs/SR composites exhibited increased ε, maintained low Young's modulus and electrical breakdown strength compared with pure SR of the same five‐layered structure. Among them, the composite with uniformly distributed MWCNT@PNs (m‐1: 1: 1) showed a highest actuation strain of 11.9% (at 19.6 kV mm−1), which was 4.1 times higher than that of SR (2.9% at 19.1 kV mm−1).

Ultrahigh Energy Storage in (Ag,Sm)(Nb,Ta)O3 Ceramics with a Stable Antiferroelectric Phase, Low Domain-Switching Barriers, and a High Breakdown Strength.

AgNbO3 (AN) antiferroelectrics (AFEs) are regarded as a promising candidate for high-property dielectric capacitors on account of their high maximum polarization, double polarization-electric field (P-E) loop characteristics, and environmental friendliness. However, high remnant polarization (Pr) and large polarization hysteresis loss from room-temperature ferrielectric behavior of AN and low breakdown strength (Eb) cause small recoverable energy density (Wrec) and efficiency (η). To solve these issues, herein, we have designed Sm3+ and Ta5+ co-doped AgNbO3. The addition of Sm3+ and Ta5+ reduces the tolerance factor, polarizability of B-site cations, and domain-switching barriers, enhancing AFE phase stability and decreasing hysteresis loss. Meanwhile, adding Sm3+ and Ta5+ leads to decreased grain sizes, increased band gap, and reduced leakage current, all contributing to increased Eb. As a benefit from the above synergistic effects, a high Wrec of 7.24 J/cm3, η of 72.55%, power density of 173.73 MW/cm3, and quick discharge rate of 18.4 ns, surpassing those of many lead-free ceramics, are obtained in the (Ag0.91Sm0.03)(Nb0.85Ta0.15)O3 ceramic. Finite element simulations for the breakdown path and transmission electron microscopy measurements of domains verify the rationality of the design strategy.

Engineering nanocluster and pyrochlore phase in BiFeO3-based ceramics for electrostatic energy storage

BiFeO3, known for its exceptional spontaneous polarization and high Curie temperature, stands as a pivotal component in power electronics. However, its relatively low breakdown strength has been a bottleneck in improving energy storage performance. Herein, we present an innovative approach to constructing nanoclusters and pyrochlore phases within BiFeO3-based ceramics. Specifically, the integration of the pyrochlore phase and nanoclusters (less than 10 nm) effectively reduces grain size and extends the growth path of electric trees, while imbuing the material with relaxor properties, which contribute to a significant enhancement in breakdown strength. As a result, this method achieves an ultrahigh energy storage density of 7.2 J/cm3 under 800 kV/cm, coupled with remarkable stability of temperature (20–180 °C), frequency (1–500 Hz), and fatigue resistance (over 10, 000 cycles). This work provides a viable pathway for the development of dielectric materials with superior energy storage performance to meet the stringent demands of advanced capacitor applications.

Design and test of an X -band constant gradient structure

A light source project named very compact inverse Compton scattering gamma-ray source (VIGAS) is under development at Tsinghua University. VIGAS aims to generate monochromatic high-energy gamma rays by colliding 350-MeV electron beams with 400-nm laser photons within a 12-m beamline. To produce a high-energy electron beam in such a compact space, the system consists of an S-band high-brightness injector and six X-band high-gradient accelerating structures. The goal of the X-band structure is to operate at a high gradient of 80 MV/m. Therefore, we adopts the constant gradient traveling wave approach, where the iris from the first cell to the end cell is tapered. The structure has 72 cells, including 70 cells and 2 couplers, so we named it XT72. The frequency of XT72 is selected to 11.424 GHz, and the 2π/3 mode is adopted. In this paper, we present a comprehensive study covering the detailed design, fabrication, rf tuning, and high-power test results of the first XT72. Additionally, we compare the performance of this structure to that of the previous constant impedance structure. Our results demonstrate that the XT72 is capable of operating at an 80−MV/m gradient with a lower breakdown rate. This advancement paves the way for the development of VIGAS project and contributes to the wider application of X-band room-temperature high-gradient structures in compact accelerator facilities. Published by the American Physical Society 2024

Excellent energy-storage performance in BNT-BT lead-free ceramics through optimized electromechanical breakdown

Dielectric capacitors with high recoverable energy storage density (Wrec) are in urgent demand for clean energy technologies. However, their lower breakdown strength (Eb) strongly limits their energy storage performance. We, herein, propose a facile method to enhance Eb by enhancing mechanical strength via second phase modulation. The efficiency of this method is validated in the (1-x)(0.94Na0.5Bi0.5TiO3-0.06BaTiO3)-xSr(Ta0.5Sb0.5)O3 ((BNT-BT)-xSTS, x = 0.1, 0.15, 0.2, 0.25, and 0.3) ceramics. The introduction of Sr(Ta0.5Sb0.5)O3 (STS) increases the relaxor degree, refines grain size, and most importantly, creates a second phase of BiSb2O7, which hinders dislocation movement and improves mechanical strength. Our results show that the breakdown strength strongly depends on the mechanical strength. The highest hardness of 7.42 GPa accompanied by the largest Eb of 620 kV/cm was obtained in (BNT-BT)-0.25STS sample. The sample exhibits the best energy storage properties of a large Wrec = 8.3 J/cm3, a high efficiency of 82.3 %, and excellent temperature/frequency stability. Furthermore, the sample also exhibits good charge/discharge stability and ultra-fast transient discharge time (62.26 ns). This work provides a theoretical guidance for developing lead-free dielectrics with superior energy-storage performance.

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

In this paper, 1.2 kV SiC trench MOSFET with deep P structure has been proposed to effectively shield the trench bottom oxide. The various design splits, such as N concentration between deep P and deep P to trench distance, were experimentally evaluated and TCAD simulations were performed to extract maximum oxide electric field at trench bottom. Based on trade off results, critical design parameters were optimized to obtain low Rdson and stable breakdown voltage with acceptable oxide electric field. To evaluate trench gate oxide reliability in wafer level, gate oxide integrity (GOI/Vramp), charge to breakdown (QBD), and time dependent dielectric breakdown (TDDB) tests were conducted. Also, high temperature gate bias (HTGB) and high temperature reverse bias (HTRB) stress tests were carried out for assembled samples to compare device reliability depending on different designs. For the target design, the promising reliability results were confirmed in both wafer level and assembled samples.

Protein Characterization and Amino Acid Profiles of Various Wheat Varieties and Their Effect on Pasting Properties of Starch

AbstractThe present study is to investigate amino acid compositions and protein characteristics of gluten extracted from different varieties of wheat and their influence on the pasting properties of starch. The starch and gluten are isolated separately from 12 wheat varieties categorized by grain hardness, i.e., hard (HW), medium hard (MHW), and soft (SW)with value ranged from 83 to 95, 72 to 80, and 17 to 29, respectively. Amino acid profiling reveals significant variations among the wheat varieties, with extraordinarily soft wheat (Ex‐SW) varieties exhibited higher levels of essential amino acid including methionine, phenylalanine, tryptophan, threonine, isoleucine, histidine, lysine, and valine. Protein fraction analysis indicates that gluten from HW varieties has a higher proportion of gliadin and lower glutenin content compared to MHW and Ex‐SW varieties. Furthermore, starch from Ex‐SW varieties possesses higher pasting parameters than MHW and HW varieties. Further, incorporation of gluten significantly reduced the pasting characteristics of starch. Flours with higher protein content demonstrate lower paste breakdown, highlighting the influence of protein content on viscoelastic properties. Furthermore, principal component analysis (PCA) reveals associations between specific amino acids and protein fractions with various pasting properties, highlighting the complex interplay between gluten composition and starch behavior.

Enhancing Energy Storage Performance of 0.85Bi0.5Na0.5TiO3-0.15LaFeO3 Lead-Free Ferroelectric Ceramics via Buried Sintering.

Bismuth sodium titanate (Bi0.5Na0.5TiO3, BNT) ceramics are expected to replace traditional lead-based materials because of their excellent ferroelectric and piezoelectric characteristics, and they are widely used in the industrial, military, and medical fields. However, BNT ceramics have a low breakdown field strength, which leads to unsatisfactory energy storage performance. In this work, 0.85Bi0.5Na0.5TiO3-0.15LaFeO3 ceramics are prepared by the traditional high-temperature solid-phase reaction method, and their energy storage performance is greatly enhanced by improving the process of buried sintering. The results show that the buried sintering method can inhibit the formation of oxygen vacancy, reduce the volatilization of Bi2O3, and greatly improve the breakdown field strength of the ceramics so that the energy storage performance can be significantly enhanced. The breakdown field strength increases from 210 kV/cm to 310 kV/cm, and the energy storage density increases from 1.759 J/cm3 to 4.923 J/cm3. In addition, the energy storage density and energy storage efficiency of these ceramics have good frequency stability and temperature stability. In this study, the excellent energy storage performance of the ceramics prepared by the buried sintering method provides an effective idea for the design of lead-free ferroelectric ceramics with high energy storage performance and greatly expands its application field.

Effect of analogue nucleating agent on the interface polarization and energy-storage performance of NaNbO3-based glass-ceramics

NaNbO3-based glass-ceramics have garnered considerable attention owing to their high dielectric constant (εr), low dielectric loss (tanδ), excellent chemical stability and tunable dielectric properties. Nonetheless, one major obstacle restricting the applications of NaNbO3-based glass-ceramics in energy-storage capacitors is their low breakdown strength (BDS) caused by interface polarization. In this work, the grains of glass-ceramics turn into fine and uniform from agglomeration via adding nucleating agent analogue HfO2 to Na2O–Nb2O5–CaO–SiO2–B2O3 (NNCBS–H) glass matrix. Thus, the long-range migration of space charge is frozen by the refined grains, which is conducive to diminishing the interfacial polarization of glass-ceramics. Moreover, the band gap energy (Eg) of NNCBS-H glass-ceramics elevates from 3.21 eV to 3.30 eV with the incorporation of HfO2 with wide band gap, enhancing its insulating performance. Ultimately, NNCBS-H4 glass-ceramics achieve a remarkable energy storage density (Wrec) of 3.8 J/cm3, establishing an effective approach and precedent for developing glass-ceramic materials with high energy storage properties.

A novel micro-capillary discharge plasma jet triggered gas switch.

To reduce the working coefficient and jitter of the three-electrode gas switch used in linear transformer drivers, a novel trigger method that uses a nanosecond pulse in cooperation with the microplasma jet generated by capillary discharge was developed. A microplasma jet was generated by the nanosecond trigger pulse and injected into the follow-up breakdown gap of the gas switch to decrease the working coefficient. The influence of capillary parameters on the development of the microplasma jet was simulated. The results showed that the microplasma jet significantly reduced the breakdown delay time, jitter, and working coefficient. Increasing the capillary length and decreasing the diameter results in better triggered breakdown performance. Furthermore, the gas switch triggered by a positive pulse exhibits a lower breakdown delay and jitter. Combined with the intensified charge coupled device's shooting results, it can be concluded that the microplasma jet has a distinct influence on streamer formation, which is important for improving the working performance of the gas switch.

Excellent energy storage performance in BSFCZ/AGO/BNTN double-heterojunction capacitors via the synergistic effect of interface and dead-layer engineering

Dielectric films with ultra-high energy storage density and efficiency are urgently needed due to the energy crisis. Here, we construct novel ferroelectric/dead-layer/superparaelectric (FE/DL/SPE) double-heterojunction capacitors, utilizing interface and dead-layer engineering to achieve outstanding energy storage performance. Bi0.9Sm0.1Fe0.9Co0.05Zn0.05O3 (BSFCZ) with large polarization, Ba0.985Na0.015Ti0.95Ni0.05O3 (BNTN) with low hysteresis and high breakdown strength (Eb), and artificial Al0.9Ga0.1O3 (AGO) with wide band-gap were chosen as the FE, SPE, and DL phases, respectively. Interface engineering enables the BSFCZ/AGO/BNTN films to maintain a high polarization of 55 μC cm−2, while the linear dielectric AGO and SPE BNTN substantially suppresses the remnant polarization. This can be clarified by the evolution of domains in the BSFCZ layer: nanodomains are scaled down to polar clusters, reducing polarization hysteresis while maintaining relatively high polarization. Simultaneously, two opposing intrinsic electric fields are formed to offset a portion of the external electric field, and the low dielectric constant AGO layer bears a significant part of the applied electric field due to electromagnetic boundary conditions. Consequently, the Eb is significantly increased from 4.4 MV cm−1 of BSFCZ/BNTN to 5.5 MV cm−1 of BSFCZ/AGO/BNTN, resulting in a giant recoverable energy density of 132 J cm−3 and a high efficiency of 84 % in BSFCZ/AGO/BNTN films. Moreover, the BSFCZ/AGO/BNTN films excel in temperature stability (RT∼200 °C), fatigue resistance (up to 107 cycles), and frequency stability (200 Hz to 20 kHz), alongside an exceptionally rapid discharge rate of 2.6 μs. This innovative approach suggests new possibilities for producing environmentally friendly, large-area, high-performance dielectric capacitors.