AbstractIn this work, we report data for the growth kinetics of locally confined dislocation loops organized within lines of controlled dimension and periodicity. The dislocation loop lines were formed in the crystalline substrate after local Si implantation and annealing in predefined areas. The distance between the lines ranges between 0.2 νm to 5 μm. It is shown that the kinetics of the DLs depends on the distance between them. When the distance is less than 1 μm, the DLs behave in a similar fashion like those grown in a continuous layer, under inert and oxidizing conditions. However, when the distance between the lines is increased (eg. 5 μm), the behavior of the loops is changed. Fast dissolution of the dislocations loops is observed during annealing in inert ambient, due to enhanced interstitial losses, while under oxidizing conditions the loops grow faster.