The almost periodic streaming motion of accelerated electrons under moderate electric fields coupled with almost periodic emission of longitudinal optical (LO) phonons is studied in a gallium nitride quantum-well—a promising pathway for terahertz (THz) oscillations. The optimal conditions for the LO-phonon-terminated streaming depend, among others, on the density of the electron gas, the low-field electron mobility, the lattice temperature, and the electric field in a very specific way. The present manuscript exploited the electron noise temperature measured at an X band frequency as a marker for the oscillations at THz frequencies. The idea was tested on a deterministic model for a GaN two-dimensional electron gas (2DEG) through calculation of the electron noise temperature spectra in the Langevin approach for the frequency range from 1 GHz to 10 THz. The noise temperature at 10 GHz was found to be in a strong anticorrelation with the THz peaks in the noise temperature spectrum. In particular, a weaker dependence on the applied electric field at 10 GHz implies stronger THz oscillations. In an experiment, the microwave hot-electron noise measurements were carried out for AlGaN/AlN/GaN heterostructures with the 2DEG channel at 10 GHz under pulsed electric field conditions in order to mitigate the effect of Joule heating of the channel. The plateau-like behavior of the noise temperature, in its dependence on the electric field, was obtained for the 2DEG channels with rather low electron densities (2.5×1012 cm−2) in a good agreement with the model. The aforementioned plateau in the electron noise temperature observed at 10 GHz can be used as an indicator for the THz oscillations.