Logic Gate Circuits Research Articles

Design and Optimization of the 4-Bit Absolute Value Logic Gate Circuits

Absolute value computation of binary numbers has important applications in digital signal processing and arithmetic operations, but conventional circuit designs usually face high latency and energy consumption problems. In order to improve computational efficiency, this paper proposes an optimization method based on logic gate circuits aimed at reducing the number of physical components and simplifying the circuit structure. By using a truth table for logic simplification, a more efficient 4-bit absolute value calculation circuit is designed in this study. Experimental results show that the optimised circuit performs significantly in reducing latency and power consumption and maintains the accuracy of the operation. The results of the study provide a better implementation of digital circuit design for application scenarios that require efficient computation.

Data encryption/decryption and medical image reconstruction based on a sustainable biomemristor designed logic gate circuit

Memristors are considered one of the most promising new-generation memory technologies due to their high integration density, fast read/write speeds, and ultra-low power consumption. Natural biomaterials have attracted interest in integrated circuits and electronics because of their environmental friendliness, sustainability, low cost, and excellent biocompatibility. In this study, a sustainable biomemristor with Ag/mugwort:PVDF/ITO structure was prepared using spin-coating and magnetron sputtering methods, which exhibited excellent durability, significant resistance switching (RS) behavior and unidirectional conduction properties when three metals were used as top electrode. By studying the conductivity mechanism of the device, a charge conduction model was established by the combination of F-N tunneling, redox, and complexation reaction. Finally, the novel logic gate circuits were constructed using the as-prepared memristor, and further memristor based encryption circuit using 3-8 decoder was innovatively designed, which can realize uniform rule encryption and decryption of medical information for data and medical images. Therefore, this work realizes the integration of memristor with traditional electronic technology and expands the applications of sustainable biomemristors in digital circuits, data encryption, and medical image security.

Ions Selectively Intrigued Ionologic Devices for Logic Operation

Capacitive analogues of semiconductor diodes (CAPodes) present a new avenue for energy-efficient and nature-inspired next-generation computing devices. Here, we disclose the generalized concept for bias-direction-adjustable n- and p-CAPodes based on selective ion sieving. Controllable-unidirectional ion flux is realized by blocking electrolyte ions from entering sub-nanometer pores. The resulting CAPodes exhibit charge-storage characteristics with a high rectification ratio (96.29 %). The enhancement of capacitance is attributed to the high surface area and porosity of an omnisorbing carbon as counter electrode. Furthermore, we demonstrate the use of an integrated device in a logic gate circuit architecture to implement logic operations (‘OR’, ‘AND’). This work demonstrates CAPodes as a generalized concept to achieve p-n and n-p analogue junctions based on selective ion electrosorption, provides a comprehensive understanding and highlights applications of ion-based diodes in ionologic architectures. Figure 1

Synthesis of novel polyethyleneimine-capped silver nanoclusters exhibiting ultraviolet-A fluorescence and their application in multiple sensing.

Cupric ions (Cu2+), pyrophosphate (PPi), and alkaline phosphatase (ALP) are involved in a variety of biochemical processes such as DNA replication, cellular metabolism and play an important role in human growth and development. It is of great significance to establish a method for the sensitive detection of Cu2+, PPi and ALP. In this work, polyethyleneimine-capped silver nanoclusters (PEI-AgNCs) were successfully synthesized by a one-pot method using hydrazine sulfate as reductant, exhibiting a unique strong fluorescence emission in the near-ultraviolet region at ∼339nm. Since the fluorescence of PEI-AgNCs can be quenched by Cu2+ through inner filtering effect (IFE), then recovered by competitive binding of pyrophosphate and Cu2+, and later weakened again by catalytic hydrolysis of alkaline phosphatase, a sensitive and selective strategy based on the changes of fluorescence "ON" or "OFF" was established to detect Cu2+, PPi and ALP. The LODs of these three analyteswere 36nM, 0.2μM, and 0.14 U L-1 at a S/N ratio of 3, respectively. A series of logic gate circuits for sensing cupric ions, pyrophosphate, and alkaline phosphatase were successfully constructed. The established methods have the potential for biosensing and environmental analysis and the specific UV-A fluorescence property of PEI-AgNCs may be helpful in photonic and optical areas.

All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly Process.

Solution-based processes have received considerable attention in the fabrication of electronics and sensors owing to their merits of being low-cost, vacuum-free, and simple in equipment. However, the current solution-based processes either lack patterning capability or have low resolution (tens of micrometers) and low pattern fidelity in terms of line edge roughness (LER, several micrometers). Here, we present a surface energy-directed assembly (SEDA) process to fabricate metal oxide patterns with up to 2 orders of magnitude improvement in resolution (800 nm) and LER (16 nm). Experiment results show that high pattern fidelity can be achieved only at low relative humidities of below 30%. The reason for this phenomenon lies in negligible water condensation on the solution droplet. Employing the SEDA process, all-solution-processed metal oxide thin film transistors (TFTs) are fabricated by using indium oxide as channel layers, indium tin oxide as source/drain electrodes and gate electrodes, and aluminum oxide as gate dielectrics. TFT-based logic gate circuits, including NOT, NOR, NAND, and AND are fabricated as well, demonstrating the applicability of the SEDA process in fabricating large area functional electronics.

Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering.

Vertical gate-all-around (V-GAA) represents the ultimate configuration in the forthcoming transistor industry, but it still encounters challenges in the semiconductor community. This paper introduces, for the first time, a dual-input logic gate circuit achieved using 3D vertical transistors with nanoscale sub-20-nm GAA, employing a novel technique for creating contacts and patterning metallic lines at the bottom level without the conventional lift-off process. This involves a two-step oxidation process: patterning the first field oxide to form bottom metal lines and then creating the gate oxide layer on nanowires (NWs), followed by selective removal from the top and bottom of the nanostructures. VGAA-NW transistors, fabricated using the lift-off-free approach, exhibit improved yield and reduced access resistance, leading to an enhanced drive current while maintaining good immunity against short-channel effects. Finally, elementary two-input logic gates within a single cell, using VNW transistors, demonstrate novel possibilities in advanced logic circuitry design and routing options in 3D.

New-Style Logic Operation and Neuromorphic Computing Enabled by Optoelectronic Artificial Synapses in an MXene/Y:HfO2 Ferroelectric Memristor.

Today's computing systems, to meet the enormous demands of information processing, have driven the development of brain-inspired neuromorphic systems. However, there are relatively few optoelectronic devices in most brain-inspired neuromorphic systems that can simultaneously regulate the conductivity through both optical and electrical signals. In this work, the Au/MXene/Y:HfO2/FTO ferroelectric memristor as an optoelectronic artificial synaptic device exhibited both digital and analog resistance switching (RS) behaviors under different voltages with a good switching ratio (>103). Under optoelectronic conditions, optimal weight update parameters and an enhanced algorithm achieved 97.1% recognition accuracy in convolutional neural networks. A new logic gate circuit specifically designed for optoelectronic inputs was established. Furthermore, the device integrates the impact of relative humidity to develop an innovative three-person voting mechanism with a veto power. These results provide a feasible approach for integrating optoelectronic artificial synapses with logic-based computing devices.

A Precursor-Derived Ultramicroporous Carbon for Printing Iontronic Logic Gates and Super-Varactors.

A liquid precursor for 3D printing ultramicroporous carbons (pore width <0.7nm) to create a novel in-plane capacitive-analog of semiconductor-based diodes (CAPodes) is presented. This proof-of-concept integrates functional EDLCs into microstructured iontronic devices. The working principle is based on selective ion-sieving, controlling the size of the electrolyte ions, and the nanoporous sieving carbon's pore size. By blocking bulky electrolyte ions from entering the sub-nanometer pores, a unidirectional charging characteristic with controllable ion flux is achieved, leading to diodic U-I characteristics with a high rectification ratio. The liquid precursor approach enables successful printing of miniaturized in-plane CAPodes. A combination of inkjet and extrusion printing techniques with suitable inks is explored to fabricate electrode materials with engineered porosity. Deliberate fine-tuning of the ultramicroporous carbon's porosity and surface area is achieved using a customized carbon precursor and CO2 etching techniques. Electrochemical evaluation of the printed CAPodes demonstrates successful miniaturization compared with macroscopic film assembly. 3D manufacturing and miniaturization allow for the integration of CAPodes into logic gate circuits (OR, AND). For the first time, these switchable devices are used as variable capacitors in a high-pass filter application, adjusting the cut-off frequency of applied alternating voltage analogous to an I-MOS varactor.

Photo-controlled programmable logic gate via self-powered Cu2O/BiFeO3/TiO2 ferroelectric heterojunction photodetectors

The increased demands for high integration, fast computation, and a wide range of data processing in digital logic circuits have triggered an interest in programmable logic gates that can run different logic operations. Photodetectors (PDs) based on ferroelectric materials can obtain different ferroelectric polarization states utilizing pre-biased voltage regulation to achieve programmable logic functions, but low photoelectric conversion efficiency and slow photoresponse speed are still key problems to be addressed for programmable logic gate devices. Herein, the Cu2O/BiFeO3(BFO)/TiO2 ferroelectric heterojunction PDs were constructed by introducing a p-type hole transport layer Cu2O on the BFO/TiO2 ferroelectric heterojunction films, which not only broadens the photoresponse spectra range to the red light, but also forms a stepped energy band structure at the heterojunction interface, and the interfacial electric field promotes the separation and transport of photogenerated carriers, improving the self-powered photodetection performance of the devices. The Cu2O/BFO/TiO2 PDs demonstrate a responsivity of 3.0 mA/W and a photoresponse rise time/decay time of 2.3/23.9 ms at 420 nm light illumination. The Cu2O/BFO/TiO2 PD can be polarized in different states by pre-biased voltage and outputs different electrical signal values under the ultraviolet (365 nm) and visible (420 nm) monochromatic light or the mixed light irradiation, thus the device can realize the "AND" gate output in the positive bias polarization state and the "OR" gate output in the negative bias polarization state, which shows that the ferroelectric heterojunction PDs has a great potential application in the field of photo-controlled programmable logic gate circuits.

Portable luminescent fiber- and glove-based nanosensor for multicolor visual detection of tetracycline in food samples.

Anintelligent fluorescent nanoprobe (lignite-CDs-Eu) was constructed by an effective and facile method based on lignite-derived carbon dots (CDs) and lanthanide europium ions (Eu3+), which exhibited high sensitivity, low detection limit (13.35nM) and visual color variation (from blue to red) under ultraviolet light towards tetracycline (TC) detection. Significantly, portable and economical sensors were developed using lignite-CDs-Eu immobilized fiber material of filter paper and wearable glove with the aid of colorextractingandimage processing application (APP) in the smartphone. Facile, fast and real-time visual detection of TC in food samples was realized. Moreover, logic gate circuit was also designed to achieve intelligent and semi-quantitative inspection of TC. To some extent, this study extended the cross-application of intelligent computer software in food analytical science, and provided a certain reference for the development of small portable detection sensors which were suitable for convenience and non-professional use in daily life.

Recent Advances of Logic Gate Circuits Based on Metallo-organic Compounds

Recent Advances of Logic Gate Circuits Based on Metallo-organic Compounds

Bio‐inspired Two‐dimensional Nanofluidic Ionic Transistor for Neuromorphic Signal Processing

AbstractVoltage‐gated ion channels prevalent in neurons play important roles in generating action potential and information transmission by responding to transmembrane potential. Fabricating bio‐inspired ionic transistors with ions as charge carriers will be crucial for realizing neuro‐inspired devices and brain‐liking computing. Here, we reported a two‐dimensional nanofluidic ionic transistor based on a MXene membrane with sub‐1 nm interlayer channels. By applying a gating voltage on the MXene nanofluidic, a transmembrane potential will be generated to active the ionic transistor, which is similar to the transmembrane potential of neuron cells and can be effectively regulated by changing membrane parameters, e.g., thickness, composition, and interlayer spacing. For the symmetric MXene nanofluidic, a high on/off ratio of ~2000 can be achieved by forming an ionic depletion or accumulation zone, contingent on the sign of the gating potential. An asymmetric PET/MXene‐composited nanofluidic transitioned the ionic transistor from ambipolar to unipolar, resulting in a more sensitive gate voltage characteristic with a low subthreshold swing of 560 mV/decade. Furthermore, ionic logic gate circuits, including the “NOT”, “NAND”, and “NOR” gate, were implemented for neuromorphic signal processing successfully, which provides a promising pathway towards highly parallel, low energy consumption, and ion‐based brain‐like computing.

Bio-inspired Two-dimensional Nanofluidic Ionic Transistor for Neuromorphic Signal Processing.

Voltage-gated ion channels prevalent in neurons play important roles in generating action potential and information transmission by responding to transmembrane potential. Fabricating bio-inspired ionic transistors with ions as charge carriers will be crucial for realizing neuro-inspired devices and brain-liking computing. Here, we reported a two-dimensional nanofluidic ionic transistor based on a MXene membrane with sub-1 nm interlayer channels. By applying a gating voltage on the MXene nanofluidic, a transmembrane potential will be generated to active the ionic transistor, which is similar to the transmembrane potential of neuron cells and can be effectively regulated by changing membrane parameters, e.g., thickness, composition, and interlayer spacing. For the symmetric MXene nanofluidic, a high on/off ratio of ~2000 can be achieved by forming an ionic depletion or accumulation zone, contingent on the sign of the gating potential. An asymmetric PET/MXene-composited nanofluidic transitioned the ionic transistor from ambipolar to unipolar, resulting in a more sensitive gate voltage characteristic with a low subthreshold swing of 560 mV/decade. Furthermore, ionic logic gate circuits, including the "NOT", "NAND", and "NOR" gate, were implemented for neuromorphic signal processing successfully, which provides a promising pathway towards highly parallel, low energy consumption, and ion-based brain-like computing.

Biomaterial/Organic Heterojunction Based Memristor for Logic Gate Circuit Design, Data Encryption, and Image Reconstruction

AbstractBenefiting from powerful logic‐computing, higher packaging density, and extremely low electricity consumption, memristors are regarded as the most promising next‐generation of electric devices and are capable of realizing brain‐like neuromorphic computation. However, the design of emerging circuit devices based on memristors and their potential application in unconventional fields are very meaningful for achieving some tasks that traditional electronic devices cannot accomplish. Herein, a Cu/PEDOT:PSS‐PP:PVDF/Ti structured memristor is fabricated by using the polyvinylidene difluoride (PVDF) dopped biomaterial papaya peel (PP) and organic poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) heterojunction as functional layer, which can be switched among resistive switching, self‐rectification effect, and capacitive behavior by adjusting the voltage bias/scan rate. Through further fitting of the data and simulating interfacial group reactions, this work innovatively proposes a charge conduction mode of device driven by Fowler–Nordheim tunneling, complexation reactions, and PEDOT:PSS pore removal. Finally, the regular logic gate and adder circuits are constructed based on the fabricated memristor, while a fully adder‐based encryption unit is designed to realize data encryption and image reconstruction. This work renders memristor compatible with logic circuits, widening a path toward data encryption and information security.

An effective supramolecular metallohydrogel-based non-volatile memory device for application in logic gate circuit

An effective supramolecular metallohydrogel-based non-volatile memory device for application in logic gate circuit

Portable smartphone platform utilizing AIE-featured carbon dots for multivariate visual detection for Cu2+, Hg2+ and BSA in real samples

Heavy metals cause serious toxic threats to both environment and human health. The multivariate, instrument-free, portable, and rapid detection strategy is crucial for determination of heavy metals. Herein, aggregation-induced emission (AIE) featured carbon dots (SN-CDs) were fabricated hydrothermally by optimizing co-doping precursors. With bright yellow emission at 560 nm, the SN-CDs were utilized for multivariate sensing Cu2+, Hg2+ and bovine serum albumin (BSA) based on AIE behavior and static quenching effect, with detection limits of 0.46 μmol·L−1, 25.8 nmol·L−1 and 1.52 μmol·L−1. A portable smartphone platform was constructed to enable portable, prompt, and sensitive analysis for Cu2+, Hg2+, and BSA via different strategies in real water and food samples with satisfied recovery. Moreover, a logic gate circuit was designed to provide the possibilities for utilization of intelligent facility. The proposed AIE SN-CDs possessing great contribution in preferable sensing performance, present promising prospects in real-time monitoring of environment and food safety.

Ultraflexible, High-Performance Transistors and Logic Circuits on Biocompatible Polylactic Acid (PLA) Substrate.

Wearable and implantable devices have gained significant popularity, playing a crucial role in smart healthcare and human-machine interfaces, which necessitates the development of more complex electronic devices and circuits on biocompatible flexible materials. Polylactic acid (PLA) stands out due to its biodegradability, cost-effectiveness, and low immunogenicity. In this study, we utilize a solution-based spin-coating method to produce high-quality PLA thin films, serving as substrates for the fabrication of thin-film transistors (TFTs) in which the dielectric layer material is silicon dioxide, the channel layer material is IGZO, and the gate, drain, and source material is ITO at low temperatures (<40 °C) through a shadow masking technique. The resulting PLA-TFT devices exhibited remarkable flexibility, biocompatibility, and impressive electrical characteristics, including a charge carrier mobility of 27.81 cm2/(V s), a subthreshold swing of 162.8 mV/decade, and an ON/OFF current ratio of up to 1 × 106, and maintained performance under various deformations. We successfully constructed fundamental logic gate circuits using PLA-TFTs, including AND, OR, and NOT gates, which effectively performed logical functions and demonstrated stability under diverse bending conditions. These research findings provide valuable support for future endeavors in fabricating intricate logic circuits and realizing advanced functionalities on biocompatible flexible materials.

An Optimized Design Of 8-Bit Absolute Value Detector Based on CMOS And Logic Effort Theory

Absolute value detecting is widely involved in integrated digital circuits. Currently absolute value comparison happens frequently in digital integrated circuits such as RISC structure micro controllers. Considering the requirements of corresponding products, an 8-bit absolute value detector is designed and optimized in this essay. Compared with some similar magnitude comparators existing on the market, this scheme supports 2’s complement input to realize calculation and comparison of absolute values. The basic structure of the design is a Complementary Metal Oxide Semiconductor (CMOS) logic gate circuit which is redesigned in order to reduce the number of transistors involved. The circuit was then further optimized in size and source voltage based on logic effort theory. Based on that, the size of logic gates and V_DD are properly adjusted to optimize both speed and energy efficiency. The final version realized a 20.12% energy consumption when the delay is 1.5 times of minimum value. In the future, similar method could be applied for optimization of other digital circuits in order to improve the performance of corresponding produces.

Logic Gate Circuits Based on CeOx/WOy Memristor for the Odd/Even Checker and Encryption/Decryption of Image Applications

AbstractDue to its powerful brain‐like parallel computing and efficient data processing capabilities, memristors are considered to be the core components for building the next generation of artificial intelligence systems. In this study, the CeOx/WOy heterojunction is employed as the functional layer, and various metal materials are utilized as the top electrode to fabricate the memristor. The results indicate that the memristive performance of the Ag/CeOx/WOy/ITO device can be improved by using Ag as the top electrode. By studying the conductivity mechanism of the device, a conductivity model is established that regulates oxygen vacancies and Ag conductive filaments. Furthermore, using the as‐prepared memristor, it is constructed four basic digital logic circuits: OR, AND, XOR, and XNOR, as well as a half adder and a full adder that can be used for digital arithmetic operations. Specifically, an odd/even checker is developed based on XOR and XNOR logic circuits to verify the correctness of data transmission. Finally, it is also designed and implemented a cryptographic array based on a memristor, which can be applied to encrypt and decrypt a series of numbers and images. Therefore, this work extends the application of memristor toward digital circuits, information transmission, data processing and image security encryption.

Cd-MOF and Its Ln3+-Post Modification Products: Regulation of Luminescence Properties and Improved Detection of Uric Acid, Quinine, and Quinidine.

One 3D Cd-MOF, namely, {[(HDMA)2][Cd3(L)2]·5H2O·2DMF}n (LCU-124, LCU indicates Liaocheng University), was synthesized from an ether-containing ligand 1,3-bis(3,5-dicarboxylphenoxy)benzene (H4L). Its Ln3+-postmodified samples, Eu3+@LCU-124 and Tb3+@LCU-124, were obtained through cation exchange of dimethylamine cation (HDMA) with Eu3+ and Tb3+. The successful entry of rare earth into LCU-124 by cation exchange modification was verified by IR, XRD, XPS, EDS mapping, and luminescence spectra. The proportion of Eu3+/Tb3+ was adjusted during the modification process, leading to fluorescent materials with different emissions. Luminescence measurements indicated that these complexes exhibited interesting multiresponsive sensing activities toward biomarkers urine acid (UA), quinine (QN), and quinidine (QND). First, LCU-124 has a pronounced quenching effect toward UA with the detection limit of 31.01 μM. After modification, the visualization of the detection was improved significantly and the detection limit of Eu3+@LCU-124 was reduced to 0.868 μM. Second, when QN and QND were present in the suspensions of Eu3+@LCU-124 and Tb3+@LCU-124, strong blue light emission peaks occurred, while the characteristic emission of Eu3+/Tb3+ decreased, forming ratiometric fluorescent sensors with the detection limit in the range of 0.199-9.49 μM. The fluorescent probes have high selectivity, excellent sensitivity recycling, and fast response time (less than 1 min). Besides, a simple logic gate circuit and a range of luminescent mixed matrix membranes were designed to provide simple and fast detection of above biomarkers. Our work indicated that modification of Eu3+/Tb3+ could improve the detection ability significantly.