Load Modulation Of Power Amplifiers Research Articles

A 6-/12-dB back-off reconfigurable Doherty-like load modulated balanced amplifier with compact area and wide bandwidth

This article presents a Doherty-like Reconfigurable Load Modulated Power Amplifier (R-LMBA) topology, which enables a broadband 6-/12-dB power back-off (PBO) reconfiguration by rearranging the bias voltages of the sub-amplifiers with compact area. The proposed R-LMBA guarantees proper phase differences among the three sub-PAs across the entire operating frequency band without the need for a bulky phase shifter that is adopted in conventional LMBAs. The design equations for the R-LMBA are proposed and analyzed in detail. A proof-of-concept PA has been designed in 0.1 μm GaAs pHEMT process to verify the proposed concept. In Mode-1, from 30 to 40 GHz, it achieves saturated output power (Psat) of 27.7–29.1 dBm with peak power added efficiency (PAE) of 28.5–34.4%, and 16.8–22.1% PAE at 6-dB PBO with its best 1.29 × efficiency enhancement over a Class-B counterpart. In Mode-2, it exhibits 28 dBm Psat with 30% peak PAE, and a PAE of 25%/13.6% at 6-/12-dB PBO, which is 1.67 × /1.81 × over an ideal Class-B PA. Besides, in Mode-1/-2, the PA demonstrates 21.3/20.3 dBm average output power (Pavg) and 17.9%/22.1% average PAE (PAEavg) with −28.1/-23.8 dB error vector magnitude (EVM) and −29.1/-25.9 dBc adjacent channel leakage ratio (ACLR) under 6-Gb/s 64-QAM modulated signal at 35 GHz.

Non-Linear Simulation by Harmonic Balance Techniques of Load Modulated Power Amplifier Driven by Random Modulated Signals

The simulation of the steady state and the non-linear stability of a load modulated power amplifier (LMPA) driven by a random modulated generator, fully performed in the frequency domain by harmonic balance (HB) techniques, is presented. The non-linear microwave circuit and the driving pseudo-random modulated (PRM) generator are integrally defined in the frequency domain. The simulation is implemented and performed using commercially available circuit simulation software. The demodulation of the output signal of the LMPA is implemented with optimally matched filters as software-defined demodulation. The simulated dynamic results of a Quasi-MMIC GaN Doherty power amplifier (DPA) are shown and compared to the measured results with a 16-QAM driving signal at 10 MS/s. The time-domain measurement allows the validation of the new simulation technique through the comparison of both the measured and the simulated error vector magnitude (EVM), the left and right adjacent channel power ratios (ACPRs) versus the average output power. This new simulation is then called pseudo-random modulated harmonic balance (PRM-HB) simulation. The full PRM-HB simulation of an LMPA driven by a random modulated signal, performed in the frequency domain at the design circuit level, results in an advanced simulation tool in the frame of the design of RF circuits and subsystems for telecommunication applications.

A Wideband and Highly Efficient Circulator Load Modulated Power Amplifier Architecture

A complete theoretical analysis is presented for a highly efficient power amplifier (PA) architecture based on a non-reciprocal combiner. The architecture consists of two amplifier branches and a microwave circulator acting as the output combiner, referred to as the circulator load-modulated amplifier (CLMA). The continuous-mode (CM) design technique has been further exploited for the CLMA to demonstrate the wideband capabilities of the architecture. The analysis reveals that the CLMA performs active load modulation to maintain high PA efficiency performance across a wide bandwidth and large output power dynamic range. As a proof of concept, a CLMA demonstrator circuit based on gallium nitride (GaN) transistors and a microwave circulator, is designed and characterized with continuous-wave and modulated-signal measurements. The implemented CLMA prototype circuit experimentally demonstrates Doherty-like efficiency enhancement over a large bandwidth covering 2.1 to 3.5 GHz. In measurements, the prototype exhibits a drain efficiency of 46.7-57.5% at peak output power and 35.6-50.6% at 7-dB output power back-off level, within the design bandwidth. When tested with a 60-MHz multi-carrier orthogonal frequency-division multiplexing (OFDM) signal having a 7-dB peak-to-average power ratio (PAPR), an average efficiency of 48.5% with better than <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula> 47.5-dBc adjacent channel leakage ratio (ACLR) is achieved after applying digital pre-distortion (DPD).

Continuous-Mode Hybrid Asymmetrical Load- Modulated Balanced Amplifier With Three-Way Modulation and Multi-Band Reconfigurability

This article introduces a novel high-order load modulation power amplifier (PA) architecture, i.e., continuous-mode hybrid asymmetric load modulated balanced amplifier (H-ALMBA). The two sub-amplifiers (BA1 and BA2) of the balanced topology in an LMBA are set as peaking amplifiers with different thresholds when cooperating with the control amplifier (CA) as the carrier, forming a hybrid load modulation behavior between Doherty and ALMBA. Compared to standard LMBA, the proposed H-ALMBA has a three-way load modulation with CA, BA1 and BA2 through proper amplitude control and phase alignment. Thus, this new mode offers extended power back-off range and enhanced back-off efficiency without suffering from difficulty and complexity in wideband design as imposed on three-way Doherty PAs. Based on comprehensive theoretical derivation and analysis, the proposed H-ALMBA is designed and implemented using commercial GaN transistors and wideband quadrature couplers. Moreover, the continuous-mode matching is applied to the carrier amplifier achieving a maximized wideband efficiency at power back-off. This is the first time that continuous mode and ALMBA have been used in combination, and very satisfactory results have been achieved, exhibiting the highest 10-dB OBO drain efficiency (DE) ever reported for wideband load-modulation PAs. The developed prototype experimentally demonstrates wide bandwidth from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.7 - 3.0$ </tex-math></inline-formula> GHz. The measurement exhibits an efficiency of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$63 - 81\%$ </tex-math></inline-formula> at peak output power, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$51 - 62\%$ </tex-math></inline-formula> for 5-dB OBO, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$50 - 66\%$ </tex-math></inline-formula> for 10-dB OBO within the design bandwidth. When stimulated by a 20-MHz long term evolution (LTE) signal with 10.5-dB peak to average power ratio (PAPR), a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$50 - 55\%$ </tex-math></inline-formula> average efficiency is measured over the entire bandwidth at an average output power around 32 dBm.

Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets

This work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is proposed based on 0.1 μm AlGaAs/InGaAs Depletion-Mode (D-Mode) technology provided by the WIN Semiconductors foundry. The proposed wideband DPA incorporates the harmonic tuning Class-J mode of operation, which aims to engineer the voltage waveform via second harmonic capacitive load termination. Moreover, the applied post-matching technique not only reduces the impedance transformation ratio of the conventional DPA, but also restores its proper load modulation. The simulation results indicate that the monolithic drive load modulation PA at 4 V operation voltage delivers 44% PAE at the maximum output power of 30 dBm at the 1 dB compression point, and 34% power-added efficiency (PAE) at 6 dB power back-off (PBO). A power gain flatness of around 14 ± 0.5 dB was achieved over the frequency band of 23 GHz to 27 GHz. The compact MMIC load modulation technique developed for the 5G mobile handset occupies the die area of 3.2 mm2.

Three-Stage Load Modulated Power Amplifier With Efficiency Enhancement at Power Back-Off

This article presents the analysis and design of a three-stage load modulated power amplifier (PA), in which three amplifiers, each with different biasing, are connected to a four-port coupler. It is illustrated that, by properly configuring current relationships between the three amplifiers, this new load modulated PA can provide flexible output power back-off (OBO) and achieve high efficiency within a large OBO range. A detailed theoretical analysis and design methodology are given. In this architecture, the OBO level can be adjusted by simply setting bias conditions of the relevant amplifiers that correspond to the current relationships. Therefore, after circuit fabrication, the OBO range can still be reconfigured without redesigning the circuit. To validate the proposed approach, a prototype operating at 3.45 GHz is demonstrated and implemented with gallium nitride (GaN) transistors. The measured saturated output power reaches 45 dBm with 70.1% drain efficiency. At 6-/8-/10-dB OBO, the fabricated PA can provide up to 62.1%/53.8%/47.3% drain efficiency, respectively. When driven by a 60-MHz 9-dB peak-to-average power ratio (PAPR) long-term evolution (LTE) signal, the PA provides 34-dBm average output power with 44.3% average efficiency. Moreover, measurement results prove that the PA can offer efficiency enhancement when the OBO is reconfigured to 8 or 12 dB after fabrication.

Asymmetrical Load Modulated Balanced Amplifier With Continuum of Modulation Ratio and Dual-Octave Bandwidth

This article presents a new load-modulation power amplifier (PA) architecture-asymmetrical load-modulated balanced amplifier (ALMBA). It is for the first time discovered that the control amplifier (CA) of LMBA can be designed with arbitrary load modulation (LM) ratio by offsetting the symmetry of two sub-amplifiers (BA1 and BA2) in the balanced topology. The rigorous analytical derivation reveals a unification of the quadrature-coupler-based LM PA theory, which inclusively covers the recently reported LMBA within this generalized framework. Through pseudo-Doherty (PD) biasing of the asymmetric BA1 & BA2 (peaking) and the CA (carrier) combined with proper amplitude and phase controls, the optimal LM behaviors of three amplifiers can be achieved independently overextended power back-off range and ultrawide RF bandwidth. Importantly, the LM of CA effectively mitigates the over-driving issue imposed on symmetrical PD-LMBA, leading to enhanced overall reliability and linearity. Based on the proposed theory, an RF-input PD-ALMBA is designed and implemented using commercial GaN transistors. The developed prototype experimentally demonstrates dual-octave bandwidth from 0.55 to 2.2 GHz, which is the widest bandwidth ever reported for load-modulation PAs. The measurement exhibits an efficiency of 49-82% for peak output power and 40-64% for 10-dB OBO within the design bandwidth. When stimulated by a 20-MHz long-term evolution (LTE) signal with 10.5-dB peak to average power ratio (PAPR), an average efficiency of 47-63% is measured over the entire bandwidth at an average output power around 33 dBm.

Novel Design Space of Load Modulated Continuous Class-B/J Power Amplifier

A novel design space of load modulated (LM) continuous Class-B/J power amplifiers (PAs) is proposed, and a detailed mathematical analysis is presented. The combination of LM technique and continuous mode is introduced to enhance the wideband performance of LM PAs. An inversely proportional relationship between $Z_{L}$ and $C_{\mathrm {out}}$ is derived, which indicates that the nonlinear $C_{\mathrm {out}}$ can affect the optimal load impedances at output power backoff (OPBO) and the design parameter $\beta $ should be appropriately adjusted. The measured results of a PA prototype show that the PAE is 39%–45% under LM when OPBO = 5 dB across 1.6–2.4 GHz. Compared with the same PA with fixed $V_{\mathrm {var}}$ , the proposed PA with optimum $V_{\mathrm {var}}$ at 2 GHz achieves a PAE improvement with 11% when OPBO = 5 dB.

RF-Input Load Modulated Balanced Amplifier With Octave Bandwidth

This paper presents an octave-bandwidth load modulated balanced amplifier (LMBA) that operates directly on a single modulated RF input. The architecture is based on the recently proposed LMBA technique, in which a control signal applied at the output isolation port of a balanced amplifier is used to modulate the apparent load impedance of the two devices comprising the balanced amplifier. In our approach, the injected control signal is used both as an active match and to dynamically load modulate the main devices to provide efficiency enhancement at back-off, thus extending the dynamic range compared to the original LMBA formulation. In this paper, we introduce a phase-compensation technique through which the active matching and load modulation tracks the frequency-dependent optimal loading trajectory of a packaged device. The result is a load-modulation power amplifier architecture able to perform an active, modulated match over an octave bandwidth. The technique is demonstrated over 1.8-3.8 GHz using packaged devices and an off-the-shelf hybrid coupler. The proof-of-concept octave RF-input LMBA has a peak CW output power of 44 dBm, with power added efficiency (PAE) over the 1.8-3.8 GHz operating frequency range of 37%-59% at peak power and 29%-45% at 6-dB output backoff. The RF-input nature of this architecture enables straightforward measurement with modulated signals; a W-CDMA signal at 3.8 GHz with 9-dB (measured) peak to average power ratio is demonstrated with adjacent channel leakage ratio of -30 dBc and average PAE of 18% for a 31-dBm average output power (2-dB backoff).

Complex Delta–Sigma-Based Transmitter With Enhanced Linearity Performance Using Pulsed Load Modulation Power Amplifier

This paper proposes a linear and efficient transmitter prototype based on pulsed load modulation (PLM) power amplifier (PA). The proposed transmitter setup utilizes the complex delta–sigma (DS) modulation as a signal processing technique instead of the envelope DS modulation for higher linearity performance. Using the complex DS modulation technique reduces the in-band quantization noise significantly at the output of the modulator and consequently, enhances the linearity of the transmitter. To validate the proposed technique, the linearity and efficiency performance of the complex DS modulator (CDSM)-based transmitter are compared with the performance of its envelope DS modulator (EDSM) counterpart in measurement. For this paper, an efficient and linear PLM PA is designed and fabricated using GaAs E-pHEMT transistors. For a Long-Term Evolution (LTE) uplink standard signal with 3-MHz bandwidth and 7-dB peak-to-average power ratio, the CDSM-based transmitter achieves the drain efficiency and power added efficiency of 46% and 42%, respectively, at an average output power of 25.1 dBm. The comparison measurement study of EDSM-based transmitter and the CDSM-based transmitter with the LTE uplink signal shows about 11-dB improvement in the signal-to-noise and distortion ratio of the output signal. The measurement results for LTE signals were able to pass the spectral requirements defined by the standard without applying predistortion techniques.

Analytical Formulas for the Coverage of Tunable Matching Networks for Reconfigurable Applications

Tunable matching networks (MNs) are essential components for agile radio frequency systems. To optimally design such networks, the total area they cover on the Smith chart needs to be determined. In this paper, the coverage areas of typical MNs have been determined analytically for the first time. It has been found that the coverage area is encompassed by up to five arcs. Analytical expressions for the centers and radii for these arcs have been derived. The theoretical analysis is provided for four typical MNs and verified by circuit simulation and measured data. Moreover, a dynamically load-modulated power amplifier has been designed using the presented theoretical techniques, which demonstrates a measured improvement in the power added efficiency of up to 5% in the frequency range of (0.8–0.9) GHz.

Modified output impedance matching solution for load modulation power amplifier performance enhancing

In this study, a modified load-modulated power amplifier (LMPA) structure is presented. Unlike the traditional LMPA (Doherty power amplifier) with quarter-wave line transformers, in this presented LMPA, the two-point matching network for the main amplifier and two-side matching network for the auxiliary amplifier are applied to achieve the back-off efficiency enhancing. The matching networks of the traditional DPAs are analysed and their limiting conditions to achieve optimal performance at back-off and peak power are deduced. A pre-matching is added to transform the load impedance (50 Ω) to complex impedance, then more freedom degrees are introduced to design the two point matching network, which results in the conditions for achieving optimal performance are more relaxed. In this way, the max output power at peak power and the optimal efficiency power at back-off can be achieved for the LMPA simultaneously. To verify the structure, an example LMPA base on GaN devices is designed. The measured max output power is about 43.8 dBm with drain efficiency (DE) of 64.9%. The measured 6 dB back-off DE is 54.9% and 4.5 dB back-off efficiency is 60.1%, which is about 15.2% higher than the class AB power amplifier.

Impact of time misalignment and input signal statistics in dynamically load-modulated amplifiers

The effect of time misalignment between the radiofrequency (RF) input and tunable matching network control signal in dynamically load-modulated power amplifiers (Pas) is investigated in theory and practice. Moreover, the impact of different input signal statistics is considered. A simple amplifier model is used for the study, based on which the impact on output power, efficiency, and linearity is explored with various generic multi-tone signals. Furthermore, to experimentally verify the results, a 10 W dynamically load-modulated RF PA is measured. As expected, proper synchronization of the signals is crucial, especially as channel bandwidth increases. Additionally, it is shown that the input signal characteristics, such as the amplitude distribution, are important. Moreover, the prototype RF PA is measured with a 1.4 MHz long-term evolution (LTE) signal delivering an average output power of 33.9 dBm with 46% efficiency. Finally, high efficiency and linearity is maintained over output power by scaling the drain supply voltage.

Model-Based Nonlinear Embedding for Power-Amplifier Design

A fully model-based nonlinear embedding device model including low- and high-frequency dispersion effects is implemented for the Angelov device model and successfully demonstrated for load modulation power-amplifier (PA) applications. Using this nonlinear embedding device model, any desired PA mode of operation at the current source plane can be projected to the external reference planes to synthesize the required multi-harmonic source and load terminations. A 2-D identification of the intrinsic PA operation modes is performed first at the current source reference planes. For intrinsic modes defined without lossy parasitics, most of the required source impedance terminations will exhibit a substantial negative resistance after projection to the external reference planes. These terminations can then be implemented by active harmonic injection at the input. It is verified experimentally for a 15-W GaN HEMT class-AB mode that, using the second harmonic injection synthesized by the embedding device model at the input, yields an improved drain efficiency of up to 5% in agreement with the simulation. A figure-of-merit is also introduced to evaluate the efficacy of the nonlinear embedding PA design methodology in achieving the targeted intrinsic mode operation given the model accuracy.

Evaluation of GaN-HEMT power amplifiers using BST-based components for load modulation

In this paper, the concept of load-modulated power amplifiers (PAs) is studied. Two GaN-HEMT power amplifiers (PAs), targeted for high efficiency at maximum and output back-off (OBO) power levels, are designed, implemented, and tested across 1.8–2.2 GHz. The load modulation in the first design is realized by tuning the shunt capacitors in the output matching network. A novel method is employed in the second design, where barium–stronrium–titante is used for the realization of load modulation. The large-signal measurement results across the desired band show 59–70% drain efficiency at 44–44.5 dBm output power for both designs. Using the available tunable technique, the drain efficiency of the PAs is enhanced by 4–20% at 6 dB OBO across the bandwidth.

A Transformer-Less Load-Modulated (TLLM) Architecture for Efficient Wideband Power Amplifiers

An architecture and design procedure for transformer-less load-modulated power amplifiers (PAs) having high efficiency at power back-off is presented. This architecture utilizes a comparable load modulation concept as in the Doherty PA; however, contrary to the Doherty PA, it neither requires an output impedance transformer, nor offset lines, which are the main limiting factors in designing wideband Doherty amplifiers. In this architecture, the proper load modulation at the transistor drain levels is directly dependant on the design of the main and peaking amplifiers' matching networks. It is shown that the design of the output impedance of the peaking amplifier as a frequency-varying susceptance rather than as a quasi-open circuit impedance (as in Doherty amplifiers) helps in achieving better wideband performance. Based on the analytical results, a step-by-step procedure is proposed for designing wideband load-modulated PAs having high efficiency over a wide power back-off region. Based on the proposed architecture and its design procedure, a 10-W PA is designed and prototyped in the 1.96-2.46-GHz band exhibiting a power-added efficiency of more than 40% at a 6-dB power back-off. In comparison with a symmetrical Doherty amplifier design using the same device, the proposed architecture exhibits a 250% enhancement in its fractional bandwidth.

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.