Liquid Phase Epitaxy Deposition Research Articles

Thick M-type barium hexaferrite films grown on garnet substrates

The deposition and characterization of thick M-type barium hexaferrite (BaFe12O19) films produced by a modified liquid phase epitaxy deposition technique are reported. The films are deposited on (111) oriented single crystal garnet (Gd3Ga5O12) substrates. The thickness of the films ranged between 45 and 80μm with growth rates of up to 40μm∕h. This growth rate is about five times greater than films grown on substrates of (111) magnesium oxide. Although the films are relatively thick, the ferrimagnetic resonance linewidth is remarkably narrow (∼50Oe) for external fields applied along the c axis.

Preparation of high-quality hexaferrite thick films by an improved liquid phase epitaxy deposition technique

In this paper, we report on the deposition of thick and high-quality films of BaM on (111) gadolinium gallium garnet (GGG) and m-plane, (11_00) or (101_0), sapphire (Al/sub 2/O/sub 3/) substrates. The deposition rate is sufficiently high to allow for large batch production. The total thickness ranged from 50 to 200 /spl mu/m for 2 h of the liquid phase epitaxy deposition. Therefore, the growth rate of the films ranged from /spl sim/25 to /spl sim/100 /spl mu/m/h. In previous work, growth rates in BaM films were quite small. Equally important, the ferrimagnetic resonance (FMR) linewidth (/spl Delta/H) was /spl sim/0.068 kOe at 58 GHz for the BaM films on (111) GGG and /spl sim/0.08 kOe at 59.9 GHz for the BaM film on m-plane sapphire substrates. The FMR linewidth films of thick BaM films deposited by pulsed laser deposition in earlier work ranged from 0.5 to 1.2 kOe.

Microwave and magnetic properties of barium hexaferrite films having the c-axis in the film plane by liquid phase epitaxy technique

We report the growth of thick barium hexaferrite (BaFe12O19,BaM) films on m-planes ([11_00] or [101_0]) sapphire (Al2O3) substrates by the liquid phase epitaxy deposition technique. The procedure entailed the deposition of seed layers of BaFe12O19 onto the substrate by the pulsed laser ablation deposition and then dipping the substrate into a molten flux for 2 h. The total thickness ranged from 60 μm to 200 μm. The vibrating sample magnetometer (VSM) measurement data showed that the film exhibited magnetic uniaxial anisotropy axis in the film plane. The coercive field was relatively small, range of Hc was from 0.007 kOe to 0.08 kOe, and the saturation magnetization (4πMs)≅4.42 kG. The ferrimagnetic resonance (FMR) linewidth (ΔH) at 59.9 GHz was ∼0.08 kOe. This value of ΔH should be contrasted with previous FMR linewidth measurement of films deposited by the PLD technique which showed a ΔH of ∼1.20 kOe.

Microwave and magnetic properties of double-sided hexaferrite films on (111) magnesium oxide substrates

We have deposited hexaferrite films of BaFe12O19 on both sides of a magnesium oxide, (111) MgO, substrate by the liquid phase epitaxy (LPE) deposition technique. The procedure entailed the deposition of seed layers of BaFe12O19 onto the substrate by laser ablation deposition and then dipping of the substrate into a molten flux. Whereas the seed layers were the order of 0.5 μm, the total thickness after LPE deposition was ∼45 μm. The ferrimagnetic resonance linewidth at 60 GHz, 27 Oe, is as low as it has ever been measured before in BaFe12O19 to the best of our knowledge. The static field measurements of the saturation magnetization and anisotropy field were in agreement with previous measured bulk values.