Liquid Indium Research Articles

Structure and properties of SmCu6 − x In6 + x (x = 0, 1, 2)

High quality single crystals of SmCu6In6 were obtained from the reactions run in excess liquid indium and characterized by means of single crystal X-ray diffraction data. SmCu6In6 crystallizes in the YCu6In6 structure type, tetragonal space group I4/mmm and lattice constants are a = b = 9.2036(3) Å and c = 5.4232(3) Å. SmCu6 − xIn6 + x (x = 0, 1, 2) compounds were obtained using arc melting and characterized using powder X-ray diffraction. Magnetic susceptibility data follow modified Curie–Weiss law behaviour above 50 K and the experimentally measured magnetic moment values in SmCu4In8, SmCu5In7 and SmCu6In6 are 0.83 μ B, 1.45 μ B and 0.90 μ B per Sm atom, respectively. SmCu5In7 and SmCu6In6 compounds show antiferromagnetic ordering at T N = 7.8 K, and no magnetic ordering was observed for SmCu4In8 down to 2 K. Electrical resistivity measurements show that all compounds are of metallic nature.

In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy

The indium supplied on c-plane GaN templates using Metal organic vapor phase epitaxy was studied by in situ X-ray reflectivity (XRR) at 800 °C. The presence of liquid indium layers on the GaN (0001) surface was demonstrated using data-fitting of XRR measurements, ex situ atomic force microscope, auger electron spectroscopy, and cross-sectional scanning electron microscope. These measurements demonstrated that a liquid indium layer coexisted with indium droplets on top of the GaN (0001) surface at 800 °C. The liquid indium film thicknesses increased with increasing TMIn supply time and did not change during cooling from 800 °C to room temperature.

Study on recycling process for EOL liquid crystal display panel

As the popularity of liquid crystal display (LCD), the number of end-of-life (EOL) LCD panel is increasing sharply. In this case, how to recycle the resources that it contains and reduce the negative impact on the environment that it will produce has been a great challenge. This research, which was based on analysis of the structure features and material properties of LCD panel, divided the recycling process for EOL LCD panel into four parts, including the separation of two glass substrates, the extraction of liquid crystal, the separation of multi-layers film and polarizing film from glass substrate. Experiments were carried out based on the theoretical analysis so as to find out a desirable resolution to each part. Finally, the optimal and practical synthetic recycling process had been obtained so as to make sure that liquid crystal, indium resources, glass substrates and polarizer could be separated and sorted for recycling more effectively and help to promote the industrialization of recycling of EOL liquid crystal display panel.

Structural and energetic assessment in cadmium–indium liquid alloys

The mixing behaviour of liquid cadmium–indium alloys has been analysed on the basis of quasi-chemical approximation by computing thermodynamic parameters, such as free energy of mixing (G M), entropy of mixing (S M), heat of mixing (H M) and chemical activities (a i) and structural functions, such as concentration fluctuation in the long wavelength limit (S cc(0)), the Warren–Cowley short-range order parameter (α 1) and the ratio of diffusion coefficients (D m/D id) of the alloys at 800 K. The analysis suggests that there is a tendency of like atom pairing (Cd–Cd, In–In) in Cd–In alloy over entire concentrations and ordering energy is found to be temperature dependent. Cd–In alloy at 800 K in the molten state is slightly segregating in nature.

Single crystal growth of europium and ytterbium based intermetallic compounds using metal flux technique

This article covers the use of indium as a potential metal solvent for the crystal growth of europium and ytterbium-based intermetallic compounds. A brief view about the advantage of metal flux technique and the use of indium as reactive and non-reactive flux are outlined. Large single crystals of EuGe2, EuCoGe3 and Yb2AuGe3 compounds were obtained in high yield from the reactions of the elements in liquid indium. The results presented here demonstrate that considerable advances in the discovery of single crystal growth of complex phases are achievable utilizing molten metals as solvents.

Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc

The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

Effect of low impurities of oxygen in inert gas and its pressure on the surface tension of liquid indium

The effect of oxygen impurities in argon and helium and their pressure in the range of 10−4 Pa to 15 MPa on the surface tension of liquid indium is studied using the method of maximum pressure in a gas bubble. It was shown that the presence of oxygen in an inert gas results in an increase in the surface tension of indium with increasing pressure.

Suppression of grain boundary embrittlement of Al–5% Mg alloy by immersion in liquid indium

High-temperature embrittlement (HTE) of coarse-grained Al–5% Mg alloy was suppressed by immersion in liquid indium. Characterization using scanning electron microscopy–energy dispersive X-ray spectrometry revealed that this treatment changed the fracture mode from intergranular to transgranular. Indium–sodium binary compounds were also identified at the grain boundaries after fracturing. The suppression of embrittlement was believed to arise from the reduction of accumulated sodium atoms at the grain boundary caused by replacement with indium–sodium compounds.

ChemInform Abstract: ThSi2 Type Ytterbium Disilicide and Its Analogues YbTxSi2‐x (T: Cr, Fe, Co).

AbstractSingle crystals of the title compounds are prepared from the elements in liquid indium (alumina crucible, 1000 °C, 5 h).

Thermal Conductivity and Thermal Diffusivity of Liquid Indium–Tin Alloys

Thermal-conductivity and thermal-diffusivity coefficients of indium–tin alloys have been determined using the laser flash method over the temperature range from the liquidus line to 1173 K. Measurements were performed using the setup LFA-427 of NETZSCH company in an argon protective atmosphere, and cells were produced from molybdenum. The equations for temperature dependences of the thermal conductivity and thermal diffusivity of In–Sn alloys have been obtained. The results of measurements were compared with data available in the literature.

Self‐Healing Circuits: Autonomic Restoration of Electrical Conductivity (Adv. Mater. 3/2012)

Self-healing of an electrical circuit is demonstrated by Nancy R. Sottos, Scott R. White, and co-workers on page 398 with nearly full recovery of conductance less than one millisecond after damage. Cracks break a conductive pathway in a multilayer device, interrupting electron transport and simultaneously rupturing adjacent microcapsules containing gallium–indium liquid metal. The released liquid metal restores the conductive pathway.

ThSi2 Type Ytterbium Disilicide and its Analogues YbTxSi2–x (T = Cr, Fe, Co)

AbstractYbSi2 and the derivatives YbTxSi2–x (T = Cr, Fe, Co) crystallizing in the α‐ThSi2 structure type were obtained as single crystals from reactions run in liquid indium. All silicides were investigated by single‐crystal X‐ray diffraction, I41/amd space group and the lattice constants are: a = 3.9868(6) Å and c = 13.541(3) Å for YbSi2, a = 4.0123(6) Å and c = 13.542(3) Å for YbCr0.27Si1.73, a = 4.0142(6) Å and c = 13.830(3) Å for YbCr0.71Si1.29, a = 4.0080(6) Å and c = 13.751(3) Å for YbFe0.34Si1.66, and a = 4.0036(6) Å, c = 13.707(3) Å for YbCo0.21Si1.79. YbSi2 and YbTxSi2–x compounds are polar intermetallics with three‐dimensional Si and M (T+Si) polyanion sub‐networks, respectively, filled with ytterbium atoms. The degree of substitution of transition metal at the silicon site is signficant and leads to changes in the average bond lengths and bond angles substantially.

Autonomic Restoration of Electrical Conductivity

Self-healing of an electrical circuit is demonstrated with nearly full recovery of conductance less than one millisecond after damage. Crack damage breaks a conductive pathway in a multilayer device, interrupting electron transport and simultaneously rupturing adjacent microcapsules containing gallium-indium liquid metal (top). The released liquid metal flows to the area of damage, restoring the conductive pathway (bottom).

Density and surface tension of heavy liquid-metal coolants: Gallium and indium

The density and surface tension of liquid high-purity gallium and indium as a function of temperature were studied. The sessile drop method was used to obtain these parameters. Experiments were carried out from the melting points to ∼1300 K in a high vacuum. The confidence error of the experiments was 0.5 and 1% for density and surface tension, respectively. The results of this research are compared with recommended reference data in the literature.

Polycrystalline silicon films on glass grown by amorphous–liquid–crystalline transition at temperatures below 330 °C

An approach to deposit polycrystalline silicon layers on amorphous substrates is presented. It is shown that metastable amorphous silicon can be transformed into its more stable microcrystalline structure at a temperature below 330 °C via an intermediate liquid solution stage. In particular, the interaction of liquid indium nanodroplets in contact with amorphous silicon is shown to lead to the formation of circular polycrystalline domains. Crystallinity of these domains is analyzed by micro-Raman spectroscopy. The droplet size necessary for the onset of crystallization is related to the temperature of the film. Full coverage of the substrate with microcrystalline silicon has been obtained at 320 °C within less than one hour. These films might act as seeding layers for further enlargement by steady-state liquid phase epitaxy.

Importance of line and interfacial energies during VLS growth of finely stranded silica nanowires

Abstract

Self-catalyzed growth of InP/InSb axial nanowire heterostructures

Axial nanowire heterostructures composed of InSb on top of InP are grown via the vapor–liquid–solid process using metalorganic precursors and liquid indium as the catalyst. Scanning and transmission electron microscopies, energy-dispersive X-ray spectroscopy, and high-resolution X-ray diffraction are used to determine the morphology, crystallinity, and composition of the heterostructures. We find that the InP is zinc blende in structure while the InSb segments are composed of both wurtzite and zinc blende structures. Interestingly, we observe the InP/InSb interfaces to be composed of elastically strained InSb and/or Sb-rich In(P,Sb) alloy layers.

Synthesis of Hollow Silica Spheres with Hierarchical Shell Structure by the Dual Action of Liquid Indium Microbeads in Vapor–Liquid–Solid Growth

Geometry-based adhesion arising from hierarchical surface structure enables microspheres to adhere to cells strongly, which is essential for inorganic microcapsules that function as drug delivery or diagnostic imaging agents. However, constructing a hierarchical structure on the outer shell of the products via the current microcapsule synthesis method is difficult. This work presents a novel approach to fabricating hollow microspheres with a hierarchical shell structure through the vapor-liquid-solid (VLS) process in which liquid indium droplets act as both templates for the formation of silica capsules and catalysts for the growth of hierarchical shell structure. This hierarchical shell structure offers the hollow microsphere an enhanced geometry-based adhesion. The results provide a facile method for fabricating hollow spheres and enriching their function through tailoring the geometry of their outer shells.

Crystal Structure and Properties of Yb5Ni4Ge10

AbstractThe new compound Yb5Ni4Ge10 was obtained as single crystals in high yield from reactions run in liquid indium. Single‐crystal X‐ray diffraction data showed that it crystallizes in the Sc5Co4Si10 structure type in the tetragonal space group P4/mbm. The structure is a three‐dimensional framework of [Ni4Ge10] atoms with voids filled by Yb atoms. The Ni and Ge atoms form pentagons, hexagons, and octagons along the ab one‐dimensional plane, which are interconnected along the c axis via Ni–Ge–Ni zigzag chains. Magnetic measurements reveal that Yb5Ni4Ge10 crystals show paramagnetic behavior with a lack of long‐range magnetic ordering down to 2 K. The magnetic susceptibility deviates from the Curie–Weiss law below 100 K, presumably because of crystal field effects from Yb3+ ions. In specific heat measurements, the compound exhibits non‐Fermi‐liquid‐like behavior at low temperatures.

High-frequency dynamics in the near-surface region studied by inelastic x-ray scattering: the case of liquid indium

Inelastic x-ray scattering in grazing angle geometry provides a novel tool for studying the surface and bulk lattice dynamics in a single experiment by varying the incidence angle around the critical angle of total reflection. At very small incidence angles (below the critical angle), it is possible to study the collective dynamics in a subsurface region of a few nanometres at interatomic length and time scales. An experimental study on liquid indium in the near-surface region is presented here and the results are analysed within a theoretical framework, based on classical hydrodynamics for the height–height fluctuations (capillary waves and non-propagating fluctuations) and generalized hydrodynamics for the bulk density fluctuations. The investigation reveals the presence of capillary waves in the inelastic x-ray spectra as an additional contribution at zero-energy transfer and a modification of the bulk density fluctuation contribution. A longer structural relaxation time and a larger longitudinal viscosity with respect to bulk indium are observed, similarly to related studies in confined liquids.