Layers of BeO have been formed in an ultra-high-vacuum system by reactive evaporation of Be according to Auwärter at a partial O 2 pressure of 10 -2 Pa. The BeO layers, which were of an arbitrary thickness, show almost no absorption in the visible wavelength range and may be prepared with surface resistivities ( i.e. ratio of resistivity to thickness) greater than 10 13Ω. with decreasing thickness of the BeO layers and with decreasing temperature of the substrate the grain size becomes smaller. If the substrate is kept at liquid air temperature, amorphous BeO layers are obtained which are of interest for electron microscopical purposes because of their low mass thickness and high resistance to chemicals. Under intense electron bombardment, thin extended monocrystalline BeO foils are formed by recrystallization processes.