This paper presents the structural, electrical and optical properties of transparent conducting F-doped textured SnO2 films prepared by atmosphere pressure chemical vapour deposition (APCVD). Polycrystalline SnO2:F films having a variable preferred orientation have been obtained with resistivity as low as 5 × 10−4 Ωcm, with carrier concentrations between 3.5 × 1020 and 7 × 1020 cm−3, and Hall mobilities from 15.7 to 20.1 cm2/V/s. The average transmittance (including diffusion transmittance) is as high as 94% in the wavelength range of the visible spectrum and the maximum infrared reflectance reaches 92% for a film 655 nm thick. The figure of merit ƒTC = T10/sh, (7.12 × 10−2 S) of these films is the highest amongst the results reported on doped SnO2 films.