A study is presented of MOS devices containing discrete bulk traps, subjected to a triangular voltage waveform, such that the rate of change of voltage is sufficiently high to take the device into the non-equilibrium mode of operation. Consequently, the dynamics of the system response are related to the parameters of the traps involved in the generation and recombination processes occurring within the device. The technique is in contrast with Kuhn's method in which the device, and hence the various generation and recombination processes, are always in quasi-equilibrium. Analytical parametric equations relating the current, and hence the small-signal capacitance and the gate voltage to the width of the depletion region, are obtained. From these equations current and small-signal capacitance vs gate voltage plots are obtained as a function of sweep rate and temperature, for both forward and reverse voltage sweeps. These plots are rich in structure, and physical discussion relating to the salient features of these plots is presented. Suggestions are made of how various device parameters such as generation rate and life-time, trap density, and capture cross-section, can be extracted from the theory.