Linear Energy Transfer Values Research Articles

Effects of Photon versus Carbon-Ion Irradiation in the Rat Cervical Spinal Cord - a Serial T2 and Diffusion-weighted Magnetic Resonance Imaging Study.

Carbon-ion irradiation is increasingly used at the skull base and spine near the radiation-sensitive spinal cord. To better characterize the invivo radiation response of the cervical spinal cord, radiogenic changes in the high-dose area were measured in rats using magnetic resonance imaging (MRI) diffusion measurements in comparison to conventional photon irradiations. In this longitudinal MRI study, we examined the gray matter (GM) of the cervical spinal cord in 16 female Sprague-Dawley rats after high-dose photon (n = 8) or carbon-ion (12C) irradiation (n = 8) and in 6 sham-exposed rats until myelopathy occurred. The differences in the diffusion pattern of the GM of the cervical spinal cord were examined until the endpoint of the study, occurrence of paresis grade II of both forelimbs was reached. In both radiation techniques, the same order of the occurrence of MR-morphological pathologies was observed - from edema formation to a blood spinal cord barrier (BSCB) disruption to paresis grade II of both forelimbs. However, carbon-ion irradiation showed a significant increase of the mean apparent diffusion coefficient (ADC; P = 0.031) with development of a BSCB disruption in the GM. Animals with paresis grade II as a late radiation response had a highly significant increase in mean ADC (P = 0.0001) after carbon-ion irradiation. At this time, a tendency was observed for higher mean ADC values in the GM after 12C irradiation as compared to photon irradiation (P = 0.059). These findings demonstrated that carbon-ion irradiation leads to greater structural damage to the GM of the rat cervical spinal cord than photon irradiation due to its higher linear energy transfer (LET) value.

Alanine dosimeters for LET measurement in proton radiotherapy

Proton radiotherapy enables highly conformal dose delivery to the tumor while minimizing exposure to healthy tissues surrounding the target. However, to achieve the most optimal treatment plan, it is necessary to consider various parameters, including variable relative biological effectiveness (RBE) and linear energy transfer (LET) within the target and in the normal tissues. The proton treatment planning systems (TPS) currently under development incorporate both of these parameters. However, before introducing biologically guided treatment planning into the clinic, commissioning and end-to-end tests must be conducted. These procedures require specific tools to verify the planned LET distribution. The same tools will also be necessary for subsequent patient-specific quality assurance (QA).The objective of this work was to evaluate the alanine/EPR dosimetry system developed at the Cyclotron Center Bronowice at the Institute of Nuclear Physics (CCB IFJ PAN) for verifying LET values in therapeutic proton fields. The change in the shape of the EPR spectra of alanine irradiated in proton fields of different LETs, described by the ratio of the intensities of the satellite and central lines (x/y ratio), was used to discriminate LET values. The method does not provide absolute LET values. However, as demonstrated, it can verify the LET values calculated in the TPS after calibration using Monte Carlo (MC) simulation.

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects and fabrication difficulties. In this work, 20 nm JLTFET is proposed with Silicon in the drain/channel region whereas source uses different materials, Silicon Germanium (SiGe), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Indium Arsenide (InAs). The device performance is examined by subjecting it to heavy ion radiation at a lower and higher dose of linear energy transfer (LET) values. It can be seen that the most sensitive location is the source/channel (S/C) interface for SiGe, GaN and GaAs whereas the drain/channel (D/C) interface for InAs. Further analysis is carried out at these vulnerable regions by matching ION of all materials. The parameters, transient peak current (Ipeak), collected charge (QC), threshold voltage shift (ΔVth) and bipolar gain (β) are extracted using transient simulations. It is observed that for a lower dose of LET, Ipeak of SiGe is 27% lesser than InAs and for higher dose of LET, SiGe shows 56% lesser Ipeak than InAs. SiGe is less sensitive at lower and higher dose of LET due to reduced ΔVth, tunneling and electron density.

Impact of heavy ions on a-Si:H/PolySi bilayer thin film transistors with Schottky barrier source and drain based on Nickel Silicide

This study investigates the influence of heavy ion irradiation on thin film transistors (TFTs) based on an a-Si:H/PolySi active layer and Schottky barrier-based source and drain. Through the use of Technology Computer-Aided Design (TCAD) simulations, we analyze the impact on device performance. We examine the ambipolar device characteristics by varying the thickness of the active layer (Poly-Si) and studying the corresponding physics. Our results reveal that reducing the active layer thickness from 140 to 80 nm decreases the magnitude of the threshold voltage (|VT|) for both nMOS and pMOS operating voltages. Additionally, the subthreshold slope is reduced for both nMOS and pMOS as the active layer thickness is decreased from 140 to 80 nm.Further, we investigated the transient response of the drain current to heavy ion irradiation in the sensitive regions across the Schottky barrier-based source and drain. We specifically analyze the phenomenon of bipolar amplification for various Linear Energy Transfer (LET) values, ranging from 0.1 MeV cm2/mg to 100 MeV cm2/mg. Our findings indicate that increasing the LET values from 0.1 MeV cm2/mg to 100 MeV cm2/mg results in amplified bipolar behavior and a drain current overshoot of over 10 % for both pMOS and nMOS operating voltages. To summarize, this work highlights the effects of heavy ion irradiation on TFTs with an a-Si:H/PolySi active layer and Schottky barrier-based source and drain. The study explores the influence of active layer thickness on device characteristics and demonstrates the transient response of drain current under different LET values. These findings contribute to a better understanding of the behavior and performance of TFTs subjected to heavy ion irradiation.

Impact of high LET radiation on various properties of CR-39 detector

Since polyallyl diglycol carbonate (PADC), viz. CR-39 has been widely used for radiation detection and measurement in various complex radiation fields, therefore, a systematic study has been carried out in this work to demonstrate the significant effect of linear energy transfer (LET) of heavy ions on the optical, structural and chemical (etching) properties of the detector. The PADC samples were exposed to heavy ions (7Li, 12C, 16O and 19F) of different energies to study the effect of LET from 76 to 1002 keV/μm. Samples were chemically processed to develop the latent tracks induced by heavy ions. Image analysis showed an increase in the damaged track size with the LET as well as the etching time. Having same energy, the track sizes of two different ions were found to be different because of the differences in their LET values. Similarly, for one particular ion, the track sizes were found to be smaller for higher energy due to low LET than that of the lower energy corresponding to high LET. Hence, this criterion is successfully demonstrated for particle identification by using PADC. Furthermore, spectrophotometric studies (UV–vis, FTIR) have been carried out to determine the changes in opacity, Urbach's energy, optical bandgap, molecular vibrations and red shift of the cut off wavelength with the increase in LET values.

Relative efficiency of radiophotoluminescent glass dosimeters in a scanning pencil proton beam

The increasing role of hadron therapy, and particularly of proton therapy, in cancer treatment requires dosimetric characterization of luminescent detectors in heavy charged particle beams. The ionization density, which is related to the linear energy transfer (LET), is changing when heavy charged particle is penetrating through a material. Therefore, it is crucial to evaluate how efficiency of the used dosimeters depends on the change in LET.The aim of this study was to evaluate relative efficiency of radiophotoluminescent (RPL) glass dosimeters (type GD-352M) in a clinical scanning pencil proton beam of 100 MeV and compare it to the results obtained with thermoluminescent (TL) dosimeters (type TLD-100). LETf and LETd at the selected dosimeter's position were evaluated and compared by two Monte Carlo codes (MCNP and PHITS). Linear dose response is precondition for the evaluation of dosimeter efficiency and first, dose response in proton beam was evaluated and compared with those in 60Co gamma ray field.Linear dose response up to 9 Gy was confirmed for RPLs in proton beam, and gamma ray field. For TLDs, supralinearity from about 5 Gy was observed. A constant relative efficiency is observed along the plateau (corresponding to LETf from 0.7 keV/μm to 1.7 keV/μm) of non-modulated proton beam with an average value 1.00 ± 0.02 for RPL and 0.97 ± 0.02 for TL dosimeters. Relative efficiency decrease of 10 % is observed for RPLs within the Bragg peak with LETf = 2.3 keV/μm. Future work will be focused on the evaluation of the efficiency for higher LET values using more energetic proton beams and precise positioning along the Bragg peak.

Variable RBE in proton radiotherapy: a comparative study with the predictive Mayo Clinic Florida microdosimetric kinetic model and phenomenological models of cell survival

Objectives. (1) To examine to what extent the cell- and exposure- specific information neglected in the phenomenological proton relative biological effectiveness (RBE) models could influence the computed RBE in proton therapy. (2) To explore similarities and differences in the formalism and the results between the linear energy transfer (LET)-based phenomenological proton RBE models and the microdosimetry-based Mayo Clinic Florida microdosimetric kinetic model (MCF MKM). (3) To investigate how the relationship between the RBE and the dose-mean proton LET is affected by the proton energy spectrum and the secondary fragments. Approach. We systematically compared six selected phenomenological proton RBE models with the MCF MKM in track-segment simulations, monoenergetic proton beams in a water phantom, and two spread-out Bragg peaks. A representative comparison with in vitro data for human glioblastoma cells (U87 cell line) is also included. Main results. Marked differences were observed between the results of the phenomenological proton RBE models, as reported in previous studies. The dispersion of these models’ results was found to be comparable to the spread in the MCF MKM results obtained by varying the cell-specific parameters neglected in the phenomenological models. Furthermore, while single cell-specific correlation between RBE and the dose-mean proton LET seems reasonable above 2 keV μm−1, caution is necessary at lower LET values due to the relevant contribution of secondary fragments. The comparison with in vitro data demonstrates comparable agreement between the MCF MKM predictions and the results of the phenomenological models. Significance. The study highlights the importance of considering cell-specific characteristics and detailed radiation quality information for accurate RBE calculations in proton therapy. Furthermore, these results provide confidence in the use of the MCF MKM for clonogenic survival RBE calculations in proton therapy, offering a more mechanistic approach compared to phenomenological models.

Influence of beam pruning techniques on LET and RBE in proton arc therapy.

Proton arc therapy (PAT) is an emerging treatment modality that holds promise to improve target volume coverage and reduce linear energy transfer (LET) in organs at risk. We aimed to investigate if pruning the highest energy layers in each beam direction could increase the LET in the target and reduce LET in tissue and organs at risk (OAR) surrounding the target volume, thus reducing the relative biological effectiveness (RBE)-weighted dose and sparing healthy tissue. PAT plans for a germinoma, an ependymoma and a rhabdomyosarcoma patient were created in the Eclipse treatment planning system with a prescribed dose of 54 Gy(RBE) using a constant RBE of 1.1 (RBE1.1). The PAT plans was pruned for high energy spots, creating several PAT plans with different amounts of pruning while maintaining tumor coverage, denoted PX-PAT plans, where X represents the amount of pruning. All plans were recalculated in the FLUKA Monte Carlo software, and the LET, physical dose, and variable RBE-weighted dose from the phenomenological Rørvik (ROR) model and an LET weighted dose (LWD) model were evaluated. For the germinoma case, all plans but the P6-PAT reduced the mean RBE-weighted dose to the surrounding healthy tissue compared to the PAT plan. The LET was increasingly higher within the PTV for each pruning iteration, where the mean LET from the P6-PAT plan was 1.5 higher than for the PAT plan, while the P4- and P5-PAT plans provided an increase of 0.4 and 0.7 , respectively. The other plans increased the LET by a smaller margin compared to the PAT plan. Likewise, the LET values to the healthy tissue were reduced for each degree of pruning. Similar results were found for the ependymoma and the rhabdomyosarcoma case. We demonstrated a PAT pruning technique that can increase both LET and RBE in the target volume and at the same time decreased values in healthy tissue, without affecting the target volume dose coverage.

Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices

In this paper, the single event burnout (SEB) in p-GaN gate HEMT power devices induced by various ions of the geostationary orbit (GEO) has been studied via simulation. The linear energy transfer (LET) values and incident depths of different ions are determined by SRIM (stopping and range of ions in matter) software, and the electrical properties of the devices under irradiation are studied by Silvaco. It is found that the SEB is caused by the corresponding high electric field and the current crowding. The sensitive injection position is in the middle of the drift region. The threshold voltage of SEB (VSEB) decreases under heavier ion irradiation. The safe operating voltage area of the device under different ions' irradiation is given. Meanwhile, the SEB failure probability of each ion in low years of GEO is evaluated, and the device is most likely to be vulnerable to H ions. Finally, the hardened structure against SEB of GaN HEMT power devices is proposed.

Simulation study of single-event burnout in hardened GaN MISFET

This paper presents simulation results of a single event burnout (SEB), for a hardened GaN metal-insulator-semiconductor field-effect transistor (MISFET), employing a dual channel p-type buried layer structure (DCP-MISFET). After irradiance with a heavy ion beam, the peak electric field around the gate channel was observed to move towards the drain channel. In addition, the electrons released by the bombardment of heavy ions were also seen to move towards the drain channel, resulting in strong impact ionization at the drain terminal. Compared to the conventional MISFET with field plates (FPC-MISFET), the distribution of electric field and the impact ionization, after heavy ion's exposure around the drain channel are improved in the GaN DCP-MISFET. Because of the second channel, the electrons induced by the heavy ion beam, change their direction. The proposed DCP-MISFET can achieve a better SEB performance than FPC-MISFET. with a heavy ion beam having the linear energy transfer (LET) value of 0.6 pC/μm at x = 7.5 μm striking vertically, the SEB threshold voltages that were obtained in FPC-MISFET and DCP-MISFET were 520 and 920 V, respectively.

Optically stimulated luminescence detectors for dosimetry and LET measurements in light ion beams

Objective. This work investigates the use of Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) detectors to determine both the dose and the radiation quality in light ion beams. The radiation quality is here expressed through either the linear energy transfer (LET) or the closely related metric Q eff, which depends on the particle’s speed and effective charge. The derived LET and Q eff values are applied to improve the dosimetry in light ion beams. Approach. OSL detectors were irradiated in mono-energetic 1H-, 4He-, 12C-, and 16O-ion beams. The OSL signal is associated with two emission bands that were separated using a pulsed stimulation technique and subjected to automatic corrections based on reference irradiations. Each emission band was investigated independently for dosimetry, and the ratio of the two emission intensities was parameterized as a function of fluence- and dose-averaged LET, as well as Q eff. The determined radiation quality was subsequently applied to correct the dose for ionization quenching. Main results. For both materials, the Q eff determinations in 1H- and 4He-ion beams are within 5 % of the Monte Carlo simulated values. Using the determined radiation quality metrics to correct the nonlinear (ionization quenched) detector response leads to doses within 2 % of the reference doses. Significance. Al2O3:C and Al2O3:C,Mg OSL detectors are applicable for dosimetry and radiation quality estimations in 1H- and 4He-ions. Only Al2O3:C,Mg shows promising results for dosimetry in 12C-ions. Across both materials and the investigated ions, the estimated Q eff values were less sensitive to the ion types than the estimated LET values were. The reduced uncertainties suggest new possibilities for simultaneously estimating the physical and biological dose in particle therapy with OSL detectors.

Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source.

In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hole pairs along the incident track, and then the generated transient current can overturn the logical state of the device when the number of electron-hole pairs is large enough. In the single-particle effect of DMG-GDS-HJLTFET, the carried energy is usually represented by linear energy transfer value (LET). In simulation, the effects of incident ion energy, incident angle, incident completion time, incident position and drain bias voltage on the single-particle effect of DMG-GDS-HJLTFET are investigated. On this basis, we optimize the auxiliary gate dielectric, tunneling gate length for reliability. Simulation results show HfO2 with a large dielectric constant should be selected as the auxiliary gate dielectric in the anti-irradiation design. Larger tunneling gate leads to larger peak transient drain current and smaller tunneling gate means larger pulse width; from the point of anti-irradiation, the tunneling gate length should be selected at about 10 nm.

In-silico calculations of DNA damage induced by [formula omitted]-particles in the 224Ra DaRT decay chain for a better understanding of the radiobiological effectiveness of this treatment

Diffusing alpha-emitters radiation Therapy (DaRT) is an interstitial brachytherapy technique using 224Ra seeds. For accurate treatment planning a good understanding of the early DNA damage due to α-particles is required. Geant4-DNA was used to calculate the initial DNA damage and radiobiological effectiveness due to α-particles with linear energy transfer (LET) values in the range 57.5–225.9 keV/μm from the 224Ra decay chain. The impact of DNA base pair density on DNA damage has been modelled, as this parameter varies between human cell lines. Results show that the quantity and complexity of DNA damage changes with LET as expected. Indirect damage, due to water radical reactions with the DNA, decreases and becomes less significant at higher LET values as shown in previous studies. As expected, the yield of complex double strand breaks (DSBs), which are harder for a cell to repair, increases approximately linearly with LET. The level of complexity of DSBs and radiobiological effectiveness have been found to increase with LET as expected. The quantity of DNA damage has been shown to increase for increased DNA density in the expected base pair density range of human cells. The change in damage yield as a function of base pair density is largest for higher LET α-particles, an increase of over 50% for individual strand breaks between 62.7 and 127.4 keV/μm. This change in yield shows that the DNA base pair density is an important parameter for modelling DNA damage particularly at higher LET where the DNA damage is greatest and most complex.

Heavy Ion Single Event Effects in CMOS Image Sensors: SET and SEU

High-energy particles in space often induce single event effects in CMOS image sensors, resulting in performance degradation and functional failure. This paper focuses on the formation and morphology of transient bright spots in CMOS image sensors and analyzes the formation process of transient bright spots by conducting heavy ion irradiation experiments to obtain the variation law of transient bright spots with heavy ion linear energy transfer values and background gray values; in addition, we classify the single event upset that occurred in the experiments according to the state of transient bright spots and extract the characteristics of different single event upsets. The failure mechanisms of different single event upsets are analyzed according to their characteristics and are combined with the information given by transient bright spots. This provides an essential reference for rapidly evaluating single event effects and the reinforcement design of CMOS image sensors.

Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter

Along with radiation sensing, necessity to study and design reliable radiation hardened devices is also increasing now-a-days. These devices are tolerant to high dosage of radiations without causing any physical damage, logic damage or data loss. In the current work, stacked gate Junctionless FinFET (SG JL FinFET) is analyzed as radiation hardened device by studying the impact of radiation of Linear Energy Transfer (LET) values ranging from 2MeV.cm/mg to 10MeV.cm/mg on the device performance. The proposed radiation hardened FinFET is experimentally calibrated with pre and post irradiation data. Single event upset (SEU) study using transient analysis is carried out to study the performance of proposed radiation hardened device at microwave frequency. High-k material-hafnium dioxide is used as gate oxide material to improve radiation hardness of SG JL FinFET. Electrical parameters-drain current, surface potential and SEU generation rate are studied to analyze device characteristics. Optimization of gate oxide, doping concentration, gate metals and temperature is carried out to enhance the reliability of device in terms of radiation hardness. SG JL FinFET is exposed to different types of waves-UV rays, X-ray, and Gamma rays to study the response of device at different frequencies. The comparison of SG JL and SG Inversion Mode (IM) FinFET has been performed. Comparison of SG JL FinFET with previously reported Inverted mode FinFET, L-shaped tunnel FET and Fully Depleted Silicon on Insulator (FD-SOI) MOSFET is carried out to find most suitable device which can provide highest immunity to radiation exposure. Response of JL FinFET based CMOS inverter in presence of radiation is studied and is also compared with other available CMOS inverters.

Data-driven ion-independent relative biological effectiveness modeling using the beam quality Q

Beam quality Q = Z2/E (Z = ion charge, E = energy), an alternative to the conventionally used linear energy transfer (LET), enables ion-independent modeling of the relative biological effectiveness (RBE) of ions. Therefore, the Q concept, i.e. different ions with similar Q have similar RBE values, could help to transfer clinical RBE knowledge from better-studied ion types (e.g. carbon) to other ions. However, the validity of the Q concept has so far only been demonstrated for low LET values. In this work, the Q concept was explored in a broad LET range, including the so-called overkilling region. The particle irradiation data ensemble (PIDE) was used as experimental in vitro dataset. Data-driven models, i.e. neural network (NN) models with low complexity, were built to predict RBE values for H, He, C and Ne ions at different in vitro endpoints taking different combinations of clinically available candidate inputs: LET, Q and linear-quadratic photon parameter α x/β x. Models were compared in terms of prediction power and ion dependence. The optimal model was compared to published model data using the local effect model (LEM IV). The NN models performed best for the prediction of RBE at reference photon doses between 2 and 4 Gy or RBE near 10% cell survival, using only α x/β x and Q instead of LET as input. The Q model was not significantly ion dependent (p > 0.5) and its prediction power was comparable to that of LEM IV. In conclusion, the validity of the Q concept was demonstrated in a clinically relevant LET range including overkilling. A data-driven Q model was proposed and observed to have an RBE prediction power comparable to a mechanistic model regardless of particle type. The Q concept provides the possibility of reducing RBE uncertainty in treatment planning for protons and ions in the future by transferring clinical RBE knowledge between ions.

Biophysical characterization of collimated and uncollimated fields in pencil beam scanning proton therapy

Objective. The lateral dose fall-off in proton pencil beam scanning (PBS) technique remains the preferred choice for sparing adjacent organs at risk as opposed to the distal edge due to the proton range uncertainties and potentially high relative biological effectiveness. However, because of the substantial spot size along with the scattering in the air and in the patient, the lateral penumbra in PBS can be degraded. Combining PBS with an aperture can result in a sharper dose fall-off, particularly for shallow targets. Approach. The aim of this work was to characterize the radiation fields produced by collimated and uncollimated 100 and 140 MeV proton beams, using Monte Carlo simulations and measurements with a MiniPIX-Timepix detector. The dose and the linear energy transfer (LET) were then coupled with published in silico biophysical models to elucidate the potential biological effects of collimated and uncollimated fields. Main results. Combining an aperture with PBS reduced the absorbed dose in the lateral fall-off and out-of-field by 60%. However, the results also showed that the absolute frequency-averaged LET (LETF) values increased by a maximum of 3.5 keV μm−1 in collimated relative to uncollimated fields, while the dose-averaged LET (LETD) increased by a maximum of 7 keV μm−1. Despite the higher LET values produced by collimated fields, the predicted DNA damage yields remained lower, owing to the large dose reduction. Significance. This work demonstrated the dosimetric advantages of combining an aperture with PBS coupled with lower DNA damage induction. A methodology for calculating dose in water derived from measurements with a silicon-based detector was also presented. This work is the first to demonstrate experimentally the increase in LET caused by combining PBS with aperture, and to assess the potential DNA damage which is the initial step in the cascade of events leading to the majority of radiation-induced biological effects.

Dosimetric response of Gafchromic™ EBT-XD film to therapeutic protons.

EBT-XD model of Gafchromic™ films has a broader optimal dynamic dose range, up to 40 Gy, compared to its predecessor models. This characteristic has made EBT-XD films suitable for high-dose applications such as stereotactic body radiotherapy and stereotactic radiosurgery, as well as ultra-high dose rate FLASH radiotherapy. The purpose of the current study was to characterize the dependence of EBT-XD film response on linear energy transfer (LET) and dose rate of therapeutic protons from a synchrotron. A clinical spot-scanning proton beam was used to study LET dependence at three dose-averaged LET (LETd) values of 1.0 keV/µm, 3.6 keV/µm, and 7.6 keV/µm. A research proton beamline was used to study dose rate dependence at 150 Gy/second in the FLASH mode and 0.3 Gy/second in the non-FLASH mode. Film response data from LETd values of 0.9 keV/µm and 9.0 keV/µm of the proton FLASH beam were also compared. Film response data from a clinical 6 MV photon beam were used as a reference. Both gray value method and optical density (OD) method were used in film calibration. Calibration results using a specific OD calculation method and a generic OD calculation method were compared. The four-parameter NIH Rodbard function and three-parameter rational function were compared in fitting the calibration curves. Experimental results showed that the response of EBT-XD film is proton LET dependent but independent of dose rate. Goodness-of-fit analysis showed that using the NIH Rodbard function is superior for both protons and photons. Using the "specific OD + NIH Rodbard function" method for EBT-XD film calibration is recommended.

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

In this paper, the effects of different factors, including the heavy ions striking location, incident angle, linear energy transfer (LET) value, projected range, ambient temperature and bias state, on the single event transient introduced by heavy ions irradiation in the SiGe heterojunction bipolar transistor (HBT) were investigated by the TCAD simulation. The results show that the current transient peak value, collected charge and carrier type of each terminal are changed by the striking location, incident angle and bias state. The current transient peak value and collected charge increase with the LET value, while they decrease with the ambient temperature. When heavy ions vertically irradiate the collector and substrate, the current transient peak value and collected charge increase with the projected range; therefore, the species of heavy ions should be considered in studying the single event effects of the SiGe HBT induced by heavy ions irradiation. The microphysical mechanism of these factors influencing the single event effects of the SiGe HBT is discussed in this work.

Dosimetric comparison of robust angles in carbon-ion radiation therapy for prostate cancer.

The objective of this study is to compare the plan robustness at various beam angles. Hence, the influence of the beam angles on robustness and linear energy transfer (LET) was evaluated in gantry-based carbon-ion radiation therapy (CIRT) for prostate cancer. 10 patients with prostate cancer were considered, and a total dose of 51.6 Gy (Relative biological effectiveness (RBE) was prescribed for the target volume in 12 fractions. Five beam field plans comprising two opposed fields with different angle pairs were characterized. Further, dose parameters were extracted, and the RBE-weighted dose and LET values for all angle pairs were compared. All plans considering the setup uncertainty satisfied the dose regimen. When a parallel beam pair was used for perturbed scenarios to take into account set-up uncertainty in the anterior direction, the LET clinical treatment volume (CTV) D 95% standard deviation was 1.5 times higher, and the standard deviation of RBE-weighted CTV D 95% was 7.9 times higher compared to an oblique pair. The oblique beam fields were superior in terms of dose sparing for the rectum compared to the dose distribution using two conventional lateral opposed fields for prostate cancer.