Abstract
In this paper, the single event burnout (SEB) in p-GaN gate HEMT power devices induced by various ions of the geostationary orbit (GEO) has been studied via simulation. The linear energy transfer (LET) values and incident depths of different ions are determined by SRIM (stopping and range of ions in matter) software, and the electrical properties of the devices under irradiation are studied by Silvaco. It is found that the SEB is caused by the corresponding high electric field and the current crowding. The sensitive injection position is in the middle of the drift region. The threshold voltage of SEB (VSEB) decreases under heavier ion irradiation. The safe operating voltage area of the device under different ions' irradiation is given. Meanwhile, the SEB failure probability of each ion in low years of GEO is evaluated, and the device is most likely to be vulnerable to H ions. Finally, the hardened structure against SEB of GaN HEMT power devices is proposed.
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