Linear Energy Transfer Values Research Articles

An empirical model of carbon-ion relative biological effectiveness based on the linear correlation between radiosensitivity to photons and carbon ions.

To develop an empirical model to predict carbon ion (C-ion) relative biological effectiveness (RBE). 

Approach. We used published cell survival data comprising 360 cell line/energy combinations to characterize the linear energy transfer (LET) dependence of cell radiosensitivity parameters describing the dose required to achieve a given survival level, e.g. 5% (D5%), which are linearly correlated between photon and C-ion radiations. Based on the LET response of the metrics D5% and D37%, we constructed a model containing four free parameters that predicts cells' linear quadratic model (LQM) survival curve parameters for C-ions, αCand βC, from the reference LQM parameters for photons, αXand βX, for a given C-ion LET value. We fit our model's free parameters to the training dataset and assessed its accuracy via leave-one out cross-validation. We further compared our model to the local effect model (LEM) and the microdosimetric kinetic model (MKM) by comparing its predictions against published predictions made with those models for clinically relevant LET values in the range of 23-107 keV/μm. 

Main Results. Our model predicted C-ion RBE within ±7%-15% depending on cell line and dose which was comparable to LEM and MKM for the same conditions. 

Significance. Our model offers comparable accuracy to the LEM or MKM but requires fewer input parameters and is less computationally expensive and whose implementation is so simple we provide it coded into a spreadsheet. Thus, our model can serve as a pragmatic alternative to these mechanistic models in cases where cell-specific input parameters cannot be obtained, the models cannot be implemented, or for which their computational efficiency is paramount.

Using single-sample networks and genetic algorithms to identify radiation-responsive genes in rice affected by heavy ions of the galactic cosmic radiation with different LET values

IntroductionHeavy ions of the galactic cosmic radiation dominate the radiation risks and biological effects for plants under spaceflight conditions. However, the biological effects and sensitive genes caused by heavy ions with different linear energy transfer (LET) values have not been thoroughly studied.MethodsTo comprehensively analyze the biological effects of heavy ions with different LET values on rice under spaceflight conditions, we utilized the Shijian-10 recoverable satellite (SJ-10) to transport the dehydrated rice seeds on a 12.5-day mission in a 252 km low Earth orbit (LEO), and obtained rice plants hit by individual heavy ions with LET values ranging from 18 keV/μm to 213 keV/μm. The transcriptome and methylation sequencing were conducted on above plants, and a bioinformatics pipeline based on single-sample networks (SSNs) and genetic algorithms (GA) was developed to analyze the multi-omics expression profiles in this work. Note that SSNs can depict the gene interaction patterns within a single sample. The LET regression models were constructed from both gene expression and interaction pattern perspectives respectively, and the radiation response genes that played significant roles in the models were identified. We designed a gene selection algorithm based on GA to enhance the performance of LET regression models.ResultsThe experimental results demonstrate that all our models exhibit excellent regression performance (R2 values close to 1), which indicates that both gene expressions and interaction patterns can reflect the molecular changes caused by heavy ions with different LET values. LET-related genes (genes exhibiting strong correlation with LET values) and radiation-responsive genes were identified, primarily involved in DNA damage and repair, oxidative stress, photosynthesis, nucleic acid metabolism, energy metabolism, amino acid/protein metabolism, and lipid metabolism, etc. DNA methylation plays a crucial role in responding to heavy ions stressors and regulates the aforementioned processes.DiscussionTo the best of our knowledge, this is the first study to report the multi-omics changes in plants after exposure to heavy ions with different LET values under spaceflight conditions.

Real-time measurement of two-dimensional LET distributions of proton beams using scintillators.


The linear energy transfer (LET) of proton therapy beams increases rapidly from the Bragg peak to the end of the beam. Although the LET can be determined using analytical or computational methods, a technique for efficiently measuring its spatial distribution has not yet been established. Thus, the purpose of this study is to develop a technique to measure the two-dimensional LET distribution in proton therapy in real time using a combination of multiple scintillators with different quenching. Inorganic and organic scintillator sheets were layered and irradiated with proton beams. Two-color signals of the CMOS sensor were obtained from the scintillation light and calibration curves were generated using LET. LET was calculated using Monte Carlo simulations as LETt and LETd weighted by fluence and dose, respectively. The accuracy of the calibration curve was evaluated by comparing the calculated and measured LET values for the 200 MeV monoenergetic and spread-out Bragg peak (SOBP) beams. LET distributions were obtained from the calibration curves.
Main results:
The deviation between the calculated and measured LET values was evaluated. For both LETt and LETd, the deviation in the plateau region of the monoenergetic and SOBP beams tended to be larger than those in the peak region. The deviation was smaller for LETd. In the obtained LETd distribution, the deviation between the calculated and measured values agreed within 3% in the peak region, while the deviation was larger in other regions. The LET distribution can be measured with a single irradiation using two scintillator sheets. This method may be effective for verifying LET in daily clinical practice and for quality control.&#xD.

Performance of a BeO-based dosimetry system for proton and electron beam dose measurements

This study aims to evaluate the performance of the BeO-based myOSLchip system (RadPro International GmbH, Remscheid, Germany) for dosimetry of proton and electron radiotherapy beams. Although beryllium oxide (BeO) has been recognised as a promising material for luminescence dosimetry in radiotherapy, this research extends beyond material properties and examines the entire BeO-based dosimetry system, including the detector, holder, and readout components.Packages of myOSLchip detectors were irradiated either in a (70−230) MeV proton beam or in a 16 MeV electron beam. The readouts were carried out using the portable myOSLchip reader. In the electron beam, tests on the precision, dose response up to 100 Gy and dose-rate effects of the system were carried out. In the proton beam, the system was tested for its dose response (up to 10 Gy), fading, and linear energy transfer (LET) response.For proton irradiations, the myOSLchip BeO OSLDs exhibited stability within 2 % over 135 days, as well as a linear dose response in the tested range, (0.1−10) Gy. The efficiency showed a reduction for proton beams with LET values (for water) above 0.6 keV/μm, with up to 40 % loss in efficiency at 4 keV/μm. For the electron irradiations, they showed a linear dose–response up to 20 Gy and dose-rate independence, with a constant response at least up to 2.99×105 Gy s−1. Using individual chip sensitivity correction, the precision for a single chip was around 3.5% (standard deviation of the data of all chips) and for a package comprising four chips was 1.7% (standard deviation of the mean of the four chips).These findings suggest the myOSLchip system’s potential as a reliable alternative to existing dosimetry systems in clinical applications.

Investigation of linear energy transfer (LET)-dependence behavior and dosimetric response of a flat-panel detector in pencil beam scanning proton therapy

PurposeThis study aims to elucidate the dependence of the flat-panel detector’s response on the linear energy transfer (LET) and evaluate the practical viability of employing flat-panel detectors in proton dosimetry applications through LET-dependent correction factors. MethodsThe study assessed the flat-panel detector’s response across varying depths using solid water and distinct 100, 150, and 200 MeV proton beams by comparing the flat-panel readings against reference doses measured with an ionization chamber. A Monte Carlo code was used to derive LET values, and an LET-dependent response correction factor was determined based on the ratio of the uncorrected flat-panel dose to the ionization chamber dose. The implications of this under-response correction were validated by applying it to a measurement involving a spread-out Bragg peak (SOBP), followed by a comparative analysis against doses calculated using the Monte Carlo code and MatriXX ONE measurement. ResultsThe association between LET and the flat-panel detector’s under-response displayed a positive correlation that intensified with increasing LET values. Notably, with a 10 keV/µm LET value, the detector’s under-response reached 50 %, while the measurement points in the SOBP demonstrated under-response greater than 20 %. However, post-correction, the adjusted flat-panel profile closely aligned with the Monte Carlo profile, yielding a 2-dimensional 3 %/3mm gamma passing rate of 100 % at various verification depths. ConclusionThis study successfully defined the link between LET and the responsiveness of flat-panel detectors for proton dosimetric measurements and established a foundational framework for integrating flat-panel detectors in clinical proton dosimetry applications.

Towards precise LET measurements based on energy deposition of therapeutic ions in Timepix3 detectors

Objective. There is an increasing interest in calculating and measuring linear energy transfer (LET) spectra in particle therapy in order to assess their impact in biological terms. As such, the accuracy of the particle fluence energy spectra becomes paramount. This study focuses on quantifying energy depositions of distinct proton, helium, carbon, and oxygen ion beams using a silicon pixel detector developed at CERN to determine LET spectra in silicon. Approach. While detection systems have been investigated in this pursuit, the scarcity of detectors capable of providing per-ion data with high spatial and temporal resolution remains an issue. This gap is where silicon pixel detector technology steps in, enabling online tracking of single-ion energy deposition. The used detector consisted of a 300 µm thick silicon sensor operated in partial depletion. Main results. During post-processing, artifacts in the acquired signals were identified and methods for their corrections were developed. Subsequently, a correlation between measured and Monte Carlo-based simulated energy deposition distributions was performed, relying on a two-step recalibration approach based on linear and saturating exponential models. Despite the observed saturation effects, deviations were confined below 7% across the entire investigated range of track-averaged LET values in silicon from 0.77 keV µm−1 to 93.16 keV µm−1. Significance. Simulated and measured mean energy depositions were found to be aligned within 7%, after applying artifact corrections. This extends the range of accessible LET spectra in silicon to clinically relevant values and validates the accuracy and reliability of the measurements. These findings pave the way towards LET-based dosimetry through an approach to translate these measurements to LET spectra in water. This will be addressed in a future study, extending functionality of treatment planning systems into clinical routine, with the potential of providing ion-beam therapy of utmost precision to cancer patients.

Simulation of Radiation-Induced DNA Damage and Protection by Histones Using the Code RITRACKS.

(1) Background: DNA damage is of great importance in the understanding of the effects of ionizing radiation. Various types of DNA damage can result from exposure to ionizing radiation, with clustered types considered the most important for radiobiological effects. (2) Methods: The code RITRACKS (Relativistic Ion Tracks), a program that simulates stochastic radiation track structures, was used to simulate DNA damage by photons and ions spanning a broad range of linear energy transfer (LET) values. To perform these simulations, the transport code was modified to include cross sections for the interactions of ions or electrons with DNA and amino acids for ionizations, dissociative electron attachment, and elastic collisions. The radiochemistry simulations were performed using a step-by-step algorithm that follows the evolution of all particles in time, including reactions between radicals and DNA structures and amino acids. Furthermore, detailed DNA damage events, such as base pair positions, DNA fragment lengths, and fragment yields, were recorded. (3) Results: We report simulation results using photons and the ions 1H+, 4He2+, 12C6+, 16O8+, and 56Fe26+ at various energies, covering LET values from 0.3 to 164 keV/µm, and performed a comparison with other codes and experimental results. The results show evidence of DNA protection from damage at its points of contacts with histone proteins. (4) Conclusions: RITRACKS can provide a framework for studying DNA damage from a variety of ionizing radiation sources with detailed representations of DNA at the atomic scale, DNA-associated proteins, and resulting DNA damage events and statistics, enabling a broader range of future comparisons with experiments such as those based on DNA sequencing.

Effects of Photon versus Carbon-Ion Irradiation in the Rat Cervical Spinal Cord - a Serial T2 and Diffusion-weighted Magnetic Resonance Imaging Study.

Carbon-ion irradiation is increasingly used at the skull base and spine near the radiation-sensitive spinal cord. To better characterize the invivo radiation response of the cervical spinal cord, radiogenic changes in the high-dose area were measured in rats using magnetic resonance imaging (MRI) diffusion measurements in comparison to conventional photon irradiations. In this longitudinal MRI study, we examined the gray matter (GM) of the cervical spinal cord in 16 female Sprague-Dawley rats after high-dose photon (n = 8) or carbon-ion (12C) irradiation (n = 8) and in 6 sham-exposed rats until myelopathy occurred. The differences in the diffusion pattern of the GM of the cervical spinal cord were examined until the endpoint of the study, occurrence of paresis grade II of both forelimbs was reached. In both radiation techniques, the same order of the occurrence of MR-morphological pathologies was observed - from edema formation to a blood spinal cord barrier (BSCB) disruption to paresis grade II of both forelimbs. However, carbon-ion irradiation showed a significant increase of the mean apparent diffusion coefficient (ADC; P = 0.031) with development of a BSCB disruption in the GM. Animals with paresis grade II as a late radiation response had a highly significant increase in mean ADC (P = 0.0001) after carbon-ion irradiation. At this time, a tendency was observed for higher mean ADC values in the GM after 12C irradiation as compared to photon irradiation (P = 0.059). These findings demonstrated that carbon-ion irradiation leads to greater structural damage to the GM of the rat cervical spinal cord than photon irradiation due to its higher linear energy transfer (LET) value.

Alanine dosimeters for LET measurement in proton radiotherapy

Proton radiotherapy enables highly conformal dose delivery to the tumor while minimizing exposure to healthy tissues surrounding the target. However, to achieve the most optimal treatment plan, it is necessary to consider various parameters, including variable relative biological effectiveness (RBE) and linear energy transfer (LET) within the target and in the normal tissues. The proton treatment planning systems (TPS) currently under development incorporate both of these parameters. However, before introducing biologically guided treatment planning into the clinic, commissioning and end-to-end tests must be conducted. These procedures require specific tools to verify the planned LET distribution. The same tools will also be necessary for subsequent patient-specific quality assurance (QA).The objective of this work was to evaluate the alanine/EPR dosimetry system developed at the Cyclotron Center Bronowice at the Institute of Nuclear Physics (CCB IFJ PAN) for verifying LET values in therapeutic proton fields. The change in the shape of the EPR spectra of alanine irradiated in proton fields of different LETs, described by the ratio of the intensities of the satellite and central lines (x/y ratio), was used to discriminate LET values. The method does not provide absolute LET values. However, as demonstrated, it can verify the LET values calculated in the TPS after calibration using Monte Carlo (MC) simulation.

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects and fabrication difficulties. In this work, 20 nm JLTFET is proposed with Silicon in the drain/channel region whereas source uses different materials, Silicon Germanium (SiGe), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Indium Arsenide (InAs). The device performance is examined by subjecting it to heavy ion radiation at a lower and higher dose of linear energy transfer (LET) values. It can be seen that the most sensitive location is the source/channel (S/C) interface for SiGe, GaN and GaAs whereas the drain/channel (D/C) interface for InAs. Further analysis is carried out at these vulnerable regions by matching ION of all materials. The parameters, transient peak current (Ipeak), collected charge (QC), threshold voltage shift (ΔVth) and bipolar gain (β) are extracted using transient simulations. It is observed that for a lower dose of LET, Ipeak of SiGe is 27% lesser than InAs and for higher dose of LET, SiGe shows 56% lesser Ipeak than InAs. SiGe is less sensitive at lower and higher dose of LET due to reduced ΔVth, tunneling and electron density.

DNA break clustering as a predictor of cell death across various radiation qualities: influence of cell size, cell asymmetry, and beam orientation

Abstract Cosmic radiation, composed of high charge and energy (HZE) particles, causes cellular DNA damage that can result in cell death or mutation that can evolve into cancer. In this work, a cell death model is applied to several cell lines exposed to HZE ions spanning a broad range of linear energy transfer (LET) values. We hypothesize that chromatin movement leads to the clustering of multiple double strand breaks (DSB) within one radiation-induced foci (RIF). The survival probability of a cell population is determined by averaging the survival probabilities of individual cells, which is function of the number of pairwise DSB interactions within RIF. The simulation code RITCARD was used to compute DSB. Two clustering approaches were applied to determine the number of RIF per cell. RITCARD outputs were combined with experimental data from four normal human cell lines to derive the model parameters and expand its predictions in response to ions with LET ranging from ~0.2 keV/μm to ~3000 keV/μm. Spherical and ellipsoidal nuclear shapes and two ion beam orientations were modeled to assess the impact of geometrical properties on cell death. The calculated average number of RIF per cell reproduces the saturation trend for high doses and high-LET values that is usually experimentally observed. The cell survival model generates the recognizable bell shape of LET dependence for the relative biological effectiveness (RBE). At low LET, smaller nuclei have lower survival due to increased DNA density and DSB clustering. At high LET, nuclei with a smaller irradiation area—either because of a smaller size or a change in beam orientation—have a higher survival rate due to a change in the distribution of DSB/RIF per cell. If confirmed experimentally, the geometric characteristics of cells would become a significant factor in predicting radiation-induced biological effects. Insight Box: High-charge and energy (HZE) ions are characterized by dense linear energy transfer (LET) that induce unique spatial distributions of DNA damage in cell nuclei that result in a greater biological effect than sparsely ionizing radiation like X-rays. HZE ions are a prominent component of galactic cosmic ray exposure during human spaceflight and specific ions are being used for radiotherapy. Here, we model DNA damage clustering at sub-micrometer scale to predict cell survival. The model is in good agreement with experimental data for a broad range of LET. Notably, the model indicates that nuclear geometry and ion beam orientation affect DNA damage clustering, which reveals their possible role in mediating cell radiosensitivity.

Impact of heavy ions on a-Si:H/PolySi bilayer thin film transistors with Schottky barrier source and drain based on Nickel Silicide

This study investigates the influence of heavy ion irradiation on thin film transistors (TFTs) based on an a-Si:H/PolySi active layer and Schottky barrier-based source and drain. Through the use of Technology Computer-Aided Design (TCAD) simulations, we analyze the impact on device performance. We examine the ambipolar device characteristics by varying the thickness of the active layer (Poly-Si) and studying the corresponding physics. Our results reveal that reducing the active layer thickness from 140 to 80 nm decreases the magnitude of the threshold voltage (|VT|) for both nMOS and pMOS operating voltages. Additionally, the subthreshold slope is reduced for both nMOS and pMOS as the active layer thickness is decreased from 140 to 80 nm.Further, we investigated the transient response of the drain current to heavy ion irradiation in the sensitive regions across the Schottky barrier-based source and drain. We specifically analyze the phenomenon of bipolar amplification for various Linear Energy Transfer (LET) values, ranging from 0.1 MeV cm2/mg to 100 MeV cm2/mg. Our findings indicate that increasing the LET values from 0.1 MeV cm2/mg to 100 MeV cm2/mg results in amplified bipolar behavior and a drain current overshoot of over 10 % for both pMOS and nMOS operating voltages. To summarize, this work highlights the effects of heavy ion irradiation on TFTs with an a-Si:H/PolySi active layer and Schottky barrier-based source and drain. The study explores the influence of active layer thickness on device characteristics and demonstrates the transient response of drain current under different LET values. These findings contribute to a better understanding of the behavior and performance of TFTs subjected to heavy ion irradiation.

Impact of high LET radiation on various properties of CR-39 detector

Since polyallyl diglycol carbonate (PADC), viz. CR-39 has been widely used for radiation detection and measurement in various complex radiation fields, therefore, a systematic study has been carried out in this work to demonstrate the significant effect of linear energy transfer (LET) of heavy ions on the optical, structural and chemical (etching) properties of the detector. The PADC samples were exposed to heavy ions (7Li, 12C, 16O and 19F) of different energies to study the effect of LET from 76 to 1002 keV/μm. Samples were chemically processed to develop the latent tracks induced by heavy ions. Image analysis showed an increase in the damaged track size with the LET as well as the etching time. Having same energy, the track sizes of two different ions were found to be different because of the differences in their LET values. Similarly, for one particular ion, the track sizes were found to be smaller for higher energy due to low LET than that of the lower energy corresponding to high LET. Hence, this criterion is successfully demonstrated for particle identification by using PADC. Furthermore, spectrophotometric studies (UV–vis, FTIR) have been carried out to determine the changes in opacity, Urbach's energy, optical bandgap, molecular vibrations and red shift of the cut off wavelength with the increase in LET values.

Relative efficiency of radiophotoluminescent glass dosimeters in a scanning pencil proton beam

The increasing role of hadron therapy, and particularly of proton therapy, in cancer treatment requires dosimetric characterization of luminescent detectors in heavy charged particle beams. The ionization density, which is related to the linear energy transfer (LET), is changing when heavy charged particle is penetrating through a material. Therefore, it is crucial to evaluate how efficiency of the used dosimeters depends on the change in LET.The aim of this study was to evaluate relative efficiency of radiophotoluminescent (RPL) glass dosimeters (type GD-352M) in a clinical scanning pencil proton beam of 100 MeV and compare it to the results obtained with thermoluminescent (TL) dosimeters (type TLD-100). LETf and LETd at the selected dosimeter's position were evaluated and compared by two Monte Carlo codes (MCNP and PHITS). Linear dose response is precondition for the evaluation of dosimeter efficiency and first, dose response in proton beam was evaluated and compared with those in 60Co gamma ray field.Linear dose response up to 9 Gy was confirmed for RPLs in proton beam, and gamma ray field. For TLDs, supralinearity from about 5 Gy was observed. A constant relative efficiency is observed along the plateau (corresponding to LETf from 0.7 keV/μm to 1.7 keV/μm) of non-modulated proton beam with an average value 1.00 ± 0.02 for RPL and 0.97 ± 0.02 for TL dosimeters. Relative efficiency decrease of 10 % is observed for RPLs within the Bragg peak with LETf = 2.3 keV/μm. Future work will be focused on the evaluation of the efficiency for higher LET values using more energetic proton beams and precise positioning along the Bragg peak.

Variable RBE in proton radiotherapy: a comparative study with the predictive Mayo Clinic Florida microdosimetric kinetic model and phenomenological models of cell survival

Objectives. (1) To examine to what extent the cell- and exposure- specific information neglected in the phenomenological proton relative biological effectiveness (RBE) models could influence the computed RBE in proton therapy. (2) To explore similarities and differences in the formalism and the results between the linear energy transfer (LET)-based phenomenological proton RBE models and the microdosimetry-based Mayo Clinic Florida microdosimetric kinetic model (MCF MKM). (3) To investigate how the relationship between the RBE and the dose-mean proton LET is affected by the proton energy spectrum and the secondary fragments. Approach. We systematically compared six selected phenomenological proton RBE models with the MCF MKM in track-segment simulations, monoenergetic proton beams in a water phantom, and two spread-out Bragg peaks. A representative comparison with in vitro data for human glioblastoma cells (U87 cell line) is also included. Main results. Marked differences were observed between the results of the phenomenological proton RBE models, as reported in previous studies. The dispersion of these models’ results was found to be comparable to the spread in the MCF MKM results obtained by varying the cell-specific parameters neglected in the phenomenological models. Furthermore, while single cell-specific correlation between RBE and the dose-mean proton LET seems reasonable above 2 keV μm−1, caution is necessary at lower LET values due to the relevant contribution of secondary fragments. The comparison with in vitro data demonstrates comparable agreement between the MCF MKM predictions and the results of the phenomenological models. Significance. The study highlights the importance of considering cell-specific characteristics and detailed radiation quality information for accurate RBE calculations in proton therapy. Furthermore, these results provide confidence in the use of the MCF MKM for clonogenic survival RBE calculations in proton therapy, offering a more mechanistic approach compared to phenomenological models.

Influence of beam pruning techniques on LET and RBE in proton arc therapy.

Proton arc therapy (PAT) is an emerging treatment modality that holds promise to improve target volume coverage and reduce linear energy transfer (LET) in organs at risk. We aimed to investigate if pruning the highest energy layers in each beam direction could increase the LET in the target and reduce LET in tissue and organs at risk (OAR) surrounding the target volume, thus reducing the relative biological effectiveness (RBE)-weighted dose and sparing healthy tissue. PAT plans for a germinoma, an ependymoma and a rhabdomyosarcoma patient were created in the Eclipse treatment planning system with a prescribed dose of 54 Gy(RBE) using a constant RBE of 1.1 (RBE1.1). The PAT plans was pruned for high energy spots, creating several PAT plans with different amounts of pruning while maintaining tumor coverage, denoted PX-PAT plans, where X represents the amount of pruning. All plans were recalculated in the FLUKA Monte Carlo software, and the LET, physical dose, and variable RBE-weighted dose from the phenomenological Rørvik (ROR) model and an LET weighted dose (LWD) model were evaluated. For the germinoma case, all plans but the P6-PAT reduced the mean RBE-weighted dose to the surrounding healthy tissue compared to the PAT plan. The LET was increasingly higher within the PTV for each pruning iteration, where the mean LET from the P6-PAT plan was 1.5 higher than for the PAT plan, while the P4- and P5-PAT plans provided an increase of 0.4 and 0.7 , respectively. The other plans increased the LET by a smaller margin compared to the PAT plan. Likewise, the LET values to the healthy tissue were reduced for each degree of pruning. Similar results were found for the ependymoma and the rhabdomyosarcoma case. We demonstrated a PAT pruning technique that can increase both LET and RBE in the target volume and at the same time decreased values in healthy tissue, without affecting the target volume dose coverage.

Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices

In this paper, the single event burnout (SEB) in p-GaN gate HEMT power devices induced by various ions of the geostationary orbit (GEO) has been studied via simulation. The linear energy transfer (LET) values and incident depths of different ions are determined by SRIM (stopping and range of ions in matter) software, and the electrical properties of the devices under irradiation are studied by Silvaco. It is found that the SEB is caused by the corresponding high electric field and the current crowding. The sensitive injection position is in the middle of the drift region. The threshold voltage of SEB (VSEB) decreases under heavier ion irradiation. The safe operating voltage area of the device under different ions' irradiation is given. Meanwhile, the SEB failure probability of each ion in low years of GEO is evaluated, and the device is most likely to be vulnerable to H ions. Finally, the hardened structure against SEB of GaN HEMT power devices is proposed.

Simulation study of single-event burnout in hardened GaN MISFET

This paper presents simulation results of a single event burnout (SEB), for a hardened GaN metal-insulator-semiconductor field-effect transistor (MISFET), employing a dual channel p-type buried layer structure (DCP-MISFET). After irradiance with a heavy ion beam, the peak electric field around the gate channel was observed to move towards the drain channel. In addition, the electrons released by the bombardment of heavy ions were also seen to move towards the drain channel, resulting in strong impact ionization at the drain terminal. Compared to the conventional MISFET with field plates (FPC-MISFET), the distribution of electric field and the impact ionization, after heavy ion's exposure around the drain channel are improved in the GaN DCP-MISFET. Because of the second channel, the electrons induced by the heavy ion beam, change their direction. The proposed DCP-MISFET can achieve a better SEB performance than FPC-MISFET. with a heavy ion beam having the linear energy transfer (LET) value of 0.6 pC/μm at x = 7.5 μm striking vertically, the SEB threshold voltages that were obtained in FPC-MISFET and DCP-MISFET were 520 and 920 V, respectively.

Optically stimulated luminescence detectors for dosimetry and LET measurements in light ion beams

Objective. This work investigates the use of Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) detectors to determine both the dose and the radiation quality in light ion beams. The radiation quality is here expressed through either the linear energy transfer (LET) or the closely related metric Q eff, which depends on the particle’s speed and effective charge. The derived LET and Q eff values are applied to improve the dosimetry in light ion beams. Approach. OSL detectors were irradiated in mono-energetic 1H-, 4He-, 12C-, and 16O-ion beams. The OSL signal is associated with two emission bands that were separated using a pulsed stimulation technique and subjected to automatic corrections based on reference irradiations. Each emission band was investigated independently for dosimetry, and the ratio of the two emission intensities was parameterized as a function of fluence- and dose-averaged LET, as well as Q eff. The determined radiation quality was subsequently applied to correct the dose for ionization quenching. Main results. For both materials, the Q eff determinations in 1H- and 4He-ion beams are within 5 % of the Monte Carlo simulated values. Using the determined radiation quality metrics to correct the nonlinear (ionization quenched) detector response leads to doses within 2 % of the reference doses. Significance. Al2O3:C and Al2O3:C,Mg OSL detectors are applicable for dosimetry and radiation quality estimations in 1H- and 4He-ions. Only Al2O3:C,Mg shows promising results for dosimetry in 12C-ions. Across both materials and the investigated ions, the estimated Q eff values were less sensitive to the ion types than the estimated LET values were. The reduced uncertainties suggest new possibilities for simultaneously estimating the physical and biological dose in particle therapy with OSL detectors.

Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source.

In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hole pairs along the incident track, and then the generated transient current can overturn the logical state of the device when the number of electron-hole pairs is large enough. In the single-particle effect of DMG-GDS-HJLTFET, the carried energy is usually represented by linear energy transfer value (LET). In simulation, the effects of incident ion energy, incident angle, incident completion time, incident position and drain bias voltage on the single-particle effect of DMG-GDS-HJLTFET are investigated. On this basis, we optimize the auxiliary gate dielectric, tunneling gate length for reliability. Simulation results show HfO2 with a large dielectric constant should be selected as the auxiliary gate dielectric in the anti-irradiation design. Larger tunneling gate leads to larger peak transient drain current and smaller tunneling gate means larger pulse width; from the point of anti-irradiation, the tunneling gate length should be selected at about 10 nm.