Low field mobility and Hall factors, as a function of the superlattice period, are calculated for a non-degenerate electron gas in a miniband of a GaAs/GaAlAs superlattice with a band offset of 250 meV at 300 K. Interface roughness and polar optical phonon scattering are considered. The effect of the superlattice structure on the phonon modes is taken into account by using the dielectric continuum model, which has been shown to be a good approximation. Mobilities parallel and perpendicular to the interfaces are calculated when the magnetic field B = 0, from iterative numerical solutions of the linearized Boltzmann transport equation. It is shown that these solutions may be used to calculate the Hall factors when B is small. Interface roughness scattering dominates the mobility behavior when the superlattice period d < 90 A ̊ . We find two independent Hall factors, both of which remain close to 1 for all values of the superlattice period.