Solid Solubility Limit Research Articles

Extraordinary diffusion in Co/Cu grain boundaries

Usually, Cu atoms hardly diffuse in Co because of the very low solid solubility limit. However, this letter shows by transmission electron microscopy that extraordinary diffusion of Cu in the Co phase occurred in Co/Cu bicrystal fabricated by diffusion joining and that many dislocations were found in the Co phase. First-principles calculations suggested that the extraordinary diffusion of Cu in Co is related to the movement of dislocations which Cu atoms adhere to.

Low-temperature dielectric relaxations in Y-doped strontium titanate ceramics

The structural and low-frequency dielectric properties of Y-doped strontium titanate ceramics prepared by the conventional mixed oxide method are investigated. The lattice parameter is found to decrease linearly in the Sr1 − 1.5xYxTiO3 system, confirming the incorporation of Y onto the Sr site of perovskite lattice of strontium titanate up to the solid solubility limit below x = 0.05. The real and imaginary parts of the dielectric permittivity of Sr1 − 1.5xYxTiO3 ceramics exhibit a relaxation between 100 Hz and 1 MHz in the temperature range 10–40 K, slightly shifting to higher temperatures with increasing Y content. Such dielectric behavior, yielding real part of the dielectric permittivity up to 35 000, is attributed to the relaxation of individual dipoles formed by off-center displacement of Y3+ ions on Sr sites in a highly polarizable lattice of strontium titanate. The other dielectric relaxation observed in Sr1 − 1.5xYxTiO3 from 125 to 300 K is attributed to the oxygen vacancy related mechanisms.

Creep behavior of perovskite-type oxides Ba0.5Sr0.5(Co0.8Fe0.2)1−xZrxO3−δ

Compressive creep tests have been performed on perovskite-type oxides Ba0.5Sr0.5(Co0.8Fe0.2)1–xZrxO3−δ (BSCF-Z100·x), where x=0.01, 0.03, 0.05 and 0.1, for the use as oxygen transport membrane, in air at 800–950°C and at nominal stresses of 30MPa and 63MPa. X-ray diffraction and microstructural observations support a solid solubility limit of ZrO2 between 0.03<x<0.05. Evidence is found for the formation of (Ba,Sr)ZrO3 secondary phases in grain boundaries at compositions beyond this limit. Zr substitution of (Co,Fe) in BSCF is found to suppress grain growth significantly, which is attributed to a solute and/or particle drag (Zener pinning) mechanism. Observed activation energies and stress exponents point to diffusional creep as the predominant mechanism for creep in BSCF-Z100·x ceramics, at T≥850°C. This is further supported by the fact that the grain-size-normalized steady-state creep rate varies little for the different BSCF-Z100·x compositions. It was confirmed that Zr substitution does not significantly affect the thermal hysteresis of the creep behavior as observed for pure BSCF.

Synthesis and structural analysis of C60–C70 two-component fullerene nanowhiskers

C60–C70 two-component fullerene nanowhiskers (C60–C70NWs) were synthesized by liquid–liquid interfacial precipitation (LLIP) using various ratios of C70 to C60 and then analyzed using a focused ion beam processing apparatus (FIB-SEM), scanning electron microscopy (SEM), Raman spectroscopy, ultraviolet–visible (UV–vis) spectroscopy, X-ray diffraction (XRD) and high-performance liquid chromatography (HPLC). Both C60 and C70 were saturated in the supernatant solutions with fullerene compositions in the mother solutions ranging from 12.4 mass% C70 to 73.4 mass% C70. C60–C70NWs contained a small amount of rhombohedral phase, indicating polymerization of C60. The solid solubility limit of C70 in the C60 matrix was found to be 13.7 mass%. In addition to fine C60–C70NWs, thick C60–C70 needle-like crystals were formed. The thick C60–C70 needle-like crystals were fractured using a molybdenum probe in the FIB. The fractured surfaces of the C60–C70 needle-like crystals showed modulated structures with chemical compositions characteristic of spinodal decomposition. The activation energy of diffusion was determined to be 37.1kJ/mol.

Effect of cryorolling on the mechanical properties of AA5083 alloy and the Portevin–Le Chatelier phenomenon

The effect of cryorolling on the mechanical properties of an AA5083 alloy was investigated. The effect of rolling strain and temperature on the Portevin–Le Chatelier effect experienced by aluminium alloys with magnesium as a major constituent was also studied. Microstructure evolution during room temperature (RT) and cryorolling (LNR) and their effect on the mechanical properties of the AA5083 alloy were studied in detail. The results showed that the hardness values increased as the rolling reduction was increased. Compared to RT rolling, LNR did not have a significant influence. Deformation-induced precipitation particles of Al6Mn during RTR resulted in enhanced mechanical properties compared to LNR conditions. A negligible amount of precipitation was observed due to suppressed adiabatic heating for samples under LNR conditions. The presence of manganese (more than its solid solubility limit) in the test material could have influenced the behaviour of the AA5083 alloy material upon rolling. The Portevin–Le Chatelier effect was clearly observed, and it was noted that with smaller grain size and an increasing dislocation density, the critical strain for the onset of the PLC effect was lowered.

Solid solubility, phase transitions, thermal expansion, and compressibility in Sc1−xAlxF3

With the goal of thermal expansion control, the synthesis and properties of Sc1−xAlxF3 were investigated. The solubility limit of AlF3 in ScF3 at ~1340K is ~50%. Solid solutions (x≤0.50) were characterized by synchrotron powder diffraction at ambient pressure between 100 and 900K and at pressures <0.414GPa while heating from 298 to 523K. A phase transition from cubic to rhombohedral is observed. The transition temperature increases smoothly with Al3+ content, approaching 500K at the solid solubility limit, and also upon compression at fixed Al3+ content. The slope of the pressure–temperature phase boundary is ~0.5KMPa−1, which is steep relative to that for most symmetry-lowering phase transitions in perovskites. The volume coefficient of thermal expansion (CTE) for the rhombohedral phase is strongly positive, but the cubic-phase CTE varies from negative (x<0.15) to near-zero (x=0.15) to positive (x>0.20) between ~600 and 800K. The cubic solid solutions elastically stiffen on heating, while Al3+ substitution causes softening at a given temperature.

Solid-state synthesis and thermoelectric properties of Cr-doped MnSi1.73

Cr-doped HMSs (higher manganese silicides), MnSi1.73 : Crx (x = 0, 0.005, 0.01, 0.02, 0.03), were prepared by using a solid-state reaction and hot pressing. X-ray diffraction analysis and Rietveld refinement confirmed the synthesis of MnSi1.73. The Cr atoms were confirmed to be soluble in the HMS structure because the lattice constant increased with increasing Cr content (x), and the solid solubility limit of Cr was estimated as x = 0.01. All specimens showed p-type conduction and exhibited degenerate semiconductor characteristics at all temperatures examined (323–823 K). The Seebeck coefficient was decreased and the electrical conductivity was increased by Cr doping. The dimensionless thermoelectric figure of merit ZT was obtained as 0.36 at 823 K for MnSi1.73 : Cr0.005 and MnSi1.73 : Cr0.01 because the power factor was increased and the thermal conductivity was decreased by Cr doping.

Characterization of the Depth Distribution and Electrical Activation and Deactivation of Ion Implanted Dopants in Silicon

Electrical-assisted diffusion of carriers is proposed as a hypothesis of major dopant deactivation kinetics. New metrology methods, including SIMS/ARXPS and continuous anodic oxidation technique/differential Hall effect methods, are used in this paper to supply supporting evidences and data. The n-type (P- and As-based) implants show more serious deactivation, but similar reactivation to p-type (B-based) implants, which can be interpreted by the electrical-assisted diffusion mechanism. Reactivation occurs only when the excess dopants exist-dopant concentration is higher than its electrically active solid solubility limit.

Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD

Metal-organic chemical vapor deposition have many advantages such as low deposition temperature compared to conventional CVD using inorganic molecules. In this study, we succeeded in the Ge1-xSnx epitaxial growth on Ge substrate by MOCVD using tertiary-butyl-germane and tetra-ethyl-tin for the precursors for the first time. The Sn concentration in the deposited film was 2 at.% which exceeds solid solubility limit of 1 at.%. The carbon impurity incorporation was confirmed to be less than the XPS detection limit.

Lanthanum doping effect in barium strontium titanate glass ceramics

Lanthanum doping effect in barium strontium titanate (Ba,Sr)TiO3 (BST) glass ceramics has been investigated by differential scanning calorimeter (DSC), X-ray diffractometry and Raman spectroscopy. Studies were performed on specimens with lanthanum oxide (La2O3) concentrations between 0 and 1.0mol% for BaO–SrO–TiO2–SiO2–Al2O3 glass system. The analysis of the dependence of DSC measurements on La2O3 concentration has shown that the increase of La2O3 concentration promotes the formation of the barium strontium titanate crystalline phase. The X-ray diffractometry results have demonstrated that the amount of barium strontium titanate crystalline phase increases and then decreases with the increase of the La2O3 concentration. The Raman spectrum results, which coincide with the X-ray diffractometry patterns, confirmed that lanthanum ions diffused into the lattice structure and modified the tetragonality of the barium strontium titanate phase. However, the additive of 1.0mol% La2O3 may go beyond the solid solubility limit of lanthanum in the BST lattice.

Tuning the composition and optical band gap of pulsed laser deposited ZnO1−xSx alloy films by controlling the substrate temperature

High-quality ZnO1−xSx thin films were grown on (001) sapphire substrates in the temperature range of 300–800°C by pulsed laser deposition (PLD) with a ZnS ceramic target and O2 as reactive gas. By increasing the substrate temperature, the crystalline quality of the films is enhanced. The S content in the single-phase ZnO1−xSx films can be systematically adjusted from 0.556 to 0.202 via changing the substrate temperature. The maximum S content in the film grown at 300°C reaches 0.556 without phase separation, which is significantly higher than the solid solubility limits reported previously for the ZnOS alloys. The narrowed band gap of the ZnO1−xSx film (2.63eV) grown at the low substrate temperature will extend the application of ZnO-based optoelectronic devices to the blue light region. As the composition, structure, and band gap energy of the ZnOS films were found to depend critically on the growth temperature, this work suggests a simple and flexible means of tuning the composition and optical band gap of ZnOS alloy films by controlling the substrate temperature during the PLD process.

Band engineering and absorption spectra in compressively strained Ge0.92Sn0.08/Ge (001) double quantum well for infrared photodetection

AbstractWe report a theoretical investigation of strained Ge1−xSnx/Ge (001)‐oriented quantum wells as a bulding block in active region of infrared photodetector. The electronic band parameters, gaps, discontinuities and effective masses for heterointerfaces between compressively strained Ge1−xSnx and relaxed Ge have beencomputed at room temperature. From this preliminary and mendatory work, we conclude that pseudomorphic Ge1−xSnx alloys become direct band gap semiconductors at a Sn‐fraction of 15.3%, e.g. a lattice mismatch as high as 2.3%. Due to achievable critical layer thickness and mainly solid solubility limit, a type‐I compressively strained Ge/Ge0.92Sn0.08/Ge (double) quantum well is studied by solving Schrödinger equation without and applied bias voltage. A strong absorption coefficient (&gt; 1×104 cm−1) and a Stark shift of the direct transition between 2.01 μm and 2.25 μm at large external fields (40kV/cm) are attractive characteristics for the design of infrared photodetectors (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

Keynote; Epitaxy-Based Strain-Engineering Methods for Advanced Devices

In Si microtechnology with the economy of scale slackening its pace, energy efficiency is the technology driver of the future. The replacement of metallic by optical interconnects and the rigorous reduction of the supply voltage (VDD) of logic circuitry are suitable options to drastically reduce power consumption. Thus the integration of optoelectronic components and steep slope devices, like the T-FET, will meet this demands. However, both elements will either need or benefit from a direct band gap material, which is not supplied by Si. Possible solutions are the given by III/V compound or by Ge based semiconductors, such as GeSn alloys grown on Si and combinations thereof. These are challenging tasks and many obstacles have to be overcome, like large lattice mismatch, alloys with compositions far beyond the solid solubility limit, antiphase domains and interface and surface states. In this paper we will discuss several epitaxial methods to address these challenges. Furthermore, basing on profound Si technology, possible fabrication routes for electronic and optoelectronic devices will be discussed. Nanotechnology in combination with advanced selective area epitaxy offer unique paths to fabricate high quality III/V nanostructures on Si. In particular templated selfassembly of vertical core/ shell and lateral nanowires on nanopatterned Si substrates will be discussed. The structural properties have been investigated using high resolution transmission microscopy. Fig. 1 depicts a lateral InAs nanowires grown on Si (110) substrates revealing (111) facets at the InAs/Si interface and rotational twins in the InAs nanowire.Regarding photonic devices the most promising group IV material is Ge, since the conduction band minimum at the G-point of the Brillouin-zone (referred to as G-valley) is placed only ca. 140 meV above the fourfold degenerate indirect L-valley. To band engineer Ge towards a direct bandgap semiconductor, two approaches are very promising, Ge with a large tensile strain (> 1.5%) and relaxed GeSn alloys with Sn concentrations above 10% [1,2]. Here, both systems are discussed, however, special emphasis is put on the growth of GeSn and SiGeSn alloys. These are predicted to have a direct band gap energy of less than 0.5 eV. Thus GeSn provides advantages for optoelectronics as well as for ultralow power T-FETs, since the small direct band gap is beneficial for the realization of large tunnel currents. However, due to the large lattice mismatch to Si, the small solubility of Sn in Ge and the necessity to strain engineer the layers, epitaxy is extremely demanding. Here we introduce an epitaxial growth method using enhanced surface kinetical reactions to provide high quality SiGeSn/GeSn heterostructures on Ge virtual substrates on Si with Sn concentrations above 10%.Fig. 2 shows a TEM cross section of a strained Ge layer embedded in relaxed SiGeSn cladding layers grown on a relaxed GeSn buffer layer. The double heterostructure provides a type I band alignment and includes doping levels for active optoelectronic devices. Structural characterization using X-ray diffraction and RBS to determine strain and crystallographic perfection have been performed. Photoluminescence and absorption spectroscopy give insights into the indirect to direct band gap transition in these materials. Finally, novel concepts for Tunnel-FET´s using III/V and group IV heterostructures will be discussed. The recently achieved strained-Si nanowire TFET exhibiting a subthreshold swing of less than 60 mV and large Ion/Ioff ratios are base for the integration of these heterostructure concepts. SiGeSn alloys potentially promise an energy efficient platform by the integration of ultralow power and optoelectronic devices. [1] Camacho-Aguilera, R. E. et al. An electrically pum-ped germanium laser. Opt. Express 20, 11316–20 (2012). [2] Bauer, M. et al. Ge–Sn semiconductors for band-gap and lattice engineering. Appl. Phys. Lett. 81, 2992 (2002).

Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD

Introduction Ge1-xSnx is recognized as one of the post scaling materials, which can be used as a channel material and a stressor for Ge MOSFETs. For instance, it was reported that a hole mobility of pMOSFET with Ge1-xSnx channel was improved comparing to the pure Ge channel [1]. Moreover, Ge1-xSnx can be used as an optical devices because the band structure changes from indirect to direct as Sn composition increasing more than 10 at.%. Ge1-xSnx is a very attractive material, and therefore often fabricated by epitaxial growth on the Ge substrate using CVD technique. However, the precursors used for CVD so far have a safety problem. GeH4 or Ge2H6 for Ge and SnH4 for Sn are very dangerous because they have a pyrophoric and explosive nature [2, 3]. In this paper, we succeeded in performing Ge1-xSnx epitaxial film growth by MOCVD (metal-organic chemical vapor deposition) using tertiary-butyl-german (t-C4H9GeH3) and tetra-ethyl-tin ((C2H5)4Sn) which have neither a pyrophoric nor explosive nature. Experiments We synthesized and used t-C4H9GeH3 and (C2H5)4Sn as Ge and Sn precursors, respectively. Ge precursor has a high vapor pressure and can be decomposed at low temperature. Furthermore, it has few residual carbon impurities in the deposited film [4]. Our selected Sn precursor also has high vapor pressure. Moreover, these precursors are sufficiently safe. In this experiment, we used Ge(100) wafer as a substrate. After the chemical cleaning of the substrates using NH4OH, HCl and HF, residual native oxide on the substrate was removed by thermal treatment at 450 ºC in the CVD process chamber. Then, the precursor vapor was injected into the chamber. The precursor supply was controlled by the flow rate of N2 carrier gas, and the temperatures of precursor bottles and pressure. In the experiment, the injected rates were estimated to be 1.4E-04 mol/min for both Ge and Sn precursors. The deposition temperature and chamber pressure were 360 ºC and 30 torr. The deposited films were investigated by transmission electron microscopy (TEM; JEM-2100, JEOL Ltd.) and X-ray diffractometry (XRD; Rigaku SmartLab). Results and Discussion Figure 1 (a) shows cross-sectional TEM (XTEM) image, here the film thickness is approximately 50 nm. Figure 1 (b) is the close-up image with enhanced brightness at the epitaxial interface indicated by the rectangle in Fig. 1 (a). No obvious defect was observed at the interface and in the film. The electron diffraction patterns taken from the Ge1-xSnx film (Fig. 2 (a)) and Ge substrate (Fig. 2 (b)) showed the same crystalline orientations, implying successful epitaxial growth. Figure 3 shows the X-ray diffraction reciprocal space mapping (XRD-2DRSM) around -2-24 diffraction. The lattice constant was expanded approximately 0.6 % in the epitaxial film from the Ge substrate. This corresponds to approximately 2 at.% Sn incorporation in the film, which exceeds solid solubility limit of 1 at.% reported in the literature [5]. In summary, we have succeeded in the Ge0.98Sn0.02 heteroepitaxial film growth on the Ge substrate by MOCVD for the first time.

An Investigation of New Phase Diagram of Ag2SO4 - CaSO4

Authors : Ravi V. Joat, Pravin S. Bodke, Shradha S. Binani, S. S. Wasnik Abstract : A phase diagram of the Ag2SO4 CaSO4 (Silver sulphate – Calcium Sulphate) binaries system using conductivity, XRD (X-Ray Diffraction Technique) and DTA (Differential Thermal Analysis) data is constructed. The eutectic reaction (liquid -» a-Ag2SO4 + CaSO4) is observed at 10 mole% CaSO4 and 645°C. Room temperature solid solubility limit up to 5.27 mole % of Ca 2+ in Ag2SO4 is set using X-ray powder diffraction and scanning electron microscopy results. All compositions beyond this limit are two-phase mixtures below and above the transition temperature (≈ 416°C). The bulk conductivity, obtained following complex impedance spectroscopy, is found decreasing with increase in CaSO4 content. Amongst other binary compositions, the 80AgSO4-20CaSO4 gave improved sinterability/packing density.

Effects of heating rates and alloying elements (Sn, Cu and Cr) on the α → α + β phase transformation of Zr–Sn–Nb–Fe–(Cu, Cr) alloys

In this investigation, differential scanning calorimetry (DSC) and metallographic experiments supplemented by back-scattered electron imaging (BSEI) and electron back-scattered diffraction (EBSD) techniques were performed to study the effects of heating rates and alloying elements on the α→α+β phase transformation of Zr–Sn–Nb–Fe–(Cu, Cr) alloys. Results show that the α→α+β phase transformation peaks shift to higher temperature with increasing heating rates, indicating that the reactions are thermally activated and kinetically controlled processes. The α→α+β phase transformation temperature (Tα→α+β) are affected by the solid solubility limit as well as the diffusivities of various elements in these alloys. For the zirconium alloys with low Nb contents, the Tα→α+β increases with an increase of Sn content. The addition of Cu in zirconium alloys decrease the Tα→α+β, while the addition of Cr increase it.

Experimental Investigation of the Phase Equilibria in the Al-Mn-Zn System at 400°C

Al-Mn-Zn ternary system is experimentally investigated at 400°C using diffusion couples and key alloys. Phase relationships and homogeneity ranges are determined for binary and ternary compounds using EPMA, SEM/EDS, and XRD. Reported ternary compound T3 (Al11Mn3Zn2) is confirmed in this study and is denoted as τ2 in this paper. Two new ternary compounds (τ1 and τ3) are observed in this system at 400°C. τ1 is determined as a stoichiometric compound with the composition of Al31Mn8Zn11. τ3 has been found to have homogeneity range of AlxMnyZnz (x=9–13 at%; y=11–15 at%; z=75–77 at%). The binary compounds Al4Mn and Al11Mn4 exhibit limited solid solubility of around 6 at% and 4 at% Zn, respectively. Terminal solid solution Al8Mn5 is found to have maximum ternary solubility of about 10 at% Zn. In addition, ternary solubility of Al-rich β-Mn′ at 400°C is determined as 4 at% Zn. Zn-rich β-Mn′′ has a ternary solubility of 3 at% Al. The solubility of Al in Mn5Zn21 is measured as 5 at%. Based on the current experimental results, the isothermal section of Al-Mn-Zn ternary system at 400°C has been constructed.

Aluminum doped ZnO sol–gel derived nanocrystals: Raman spectroscopy and solid solubility characterization

In this study, a sol–gel method was used to synthesize Al‐doped ZnO nanocrystals (AZO). For preparation of this highly concentrated sol, zinc acetate concentration was fixed at 2M. UV‐visible absorption and photoluminescence spectroscopy were used to evaluate optical properties of the prepared samples. High temperature annealing was employed to evaluate the solid solubility limit of Al ions. XRD and Raman spectroscopy are then used to evaluate the doping process of aluminum in ZnO nanopowders. Disappearing of the second order Raman peak of ZnO at 1160 cm−1 was used to confirm the solid solubility limit. It can be found that the disappearing of second order Raman peak intensity at 1160 cm−1 is observed for sample with 2 at% Al3+ ion. Experimental results have shown that the solid solubility limit of aluminium ions in sol–gel derived zinc oxide nanocrystals was achieved.

The coupled geochemistry of Au and As in pyrite from hydrothermal ore deposits

The ubiquity of Au-bearing arsenian pyrite in hydrothermal ore deposits suggests that the coupled geochemical behaviour of Au and As in this sulfide occurs under a wide range of physico-chemical conditions. Despite significant advances in the last 20years, fundamental factors controlling Au and As ratios in pyrite from ore deposits remain poorly known. Here we explore these constraints using new and previously published EMPA, LA-ICP-MS, SIMS, and μ-PIXE analyses of As and Au in pyrite from Carlin-type Au, epithermal Au, porphyry Cu, Cu–Au, and orogenic Au deposits, volcanogenic massive sulfide (VHMS), Witwatersrand Au, iron oxide copper gold (IOCG), and coal deposits. Pyrite included in the data compilation formed under temperatures from ∼30 to ∼600°C and in a wide variety of geological environments. The pyrite Au-As data form a wedge-shaped zone in compositional space, and the fact that most data points plot below the solid solubility limit defined by Reich et al. (2005) indicate that Au1+ is the dominant form of Au in arsenian pyrite and that Au-bearing ore fluids that deposit this sulfide are mostly undersaturated with respect to native Au. The analytical data also show that the solid solubility limit of Au in arsenian pyrite defined by an Au/As ratio of 0.02 is independent of the geochemical environment of pyrite formation and rather depends on the crystal-chemical properties of pyrite and post-depositional alteration. Compilation of Au–As concentrations and formation temperatures for pyrite indicates that Au and As solubility in pyrite is retrograde; Au and As contents decrease as a function of increasing temperature from ∼200 to ∼500°C. Based on these results, two major Au–As trends for Au-bearing arsenian pyrite from ore deposits are defined. One trend is formed by pyrites from Carlin-type and orogenic Au deposits where compositions are largely controlled by fluid-rock interactions and/or can be highly perturbed by changes in temperature and alteration by hydrothermal fluids. The second trend consists of pyrites from porphyry Cu and epithermal Au deposits, which are characterised by compositions that preserve the Au/As signature of mineralizing magmatic-hydrothermal fluids, confirming the role of this sulfide in controlling metal ratios in ore systems.

Phase structure and the dielectric properties of the (Zn, Mg)2(Ti, Sn)O4 ceramics

(1−x)ZnO–xMgO–0.88TiO2–0.12SnO2 (x=0.05, 0.10, 0.15 and 0.20) ceramics were prepared by conventional mixed-oxide method. The phase structure, morphology and dielectric properties of the ceramics were investigated. The results show that Mg was incorporated into the phase of Zn2(Ti,Sn)O4 and the spinel-type solid solution (Zn(1−x),Mgx)2(Ti0.88,Sn0.12)O4 formed, the solid solubility limit of Mg was situated at x=0.05–0.10. The 0.95ZnO–0.05MgO–0.88TiO2–0.12SnO2 ceramics sintered at 1080°C exhibit dielectric properties εr=18.9, tanδ=5.5×10−4 and near zero temperature coefficient of dielectric constant (τε=2.89ppm/°C). Due to their stable dielectric property, the 0.95ZnO–0.05MgO–0.88TiO2–0.12SnO2 ceramics can serve as the promising high-frequency dielectric capacitor after further modification.