Light Extraction Efficiency Research Articles

Solvent-Reconstructed Interface That Enhances Light Out-Coupling in Quasi-Two-Dimensional Perovskite Light-Emitting Diodes.

Light management is critical to maximizing the external quantum efficiency of perovskite light-emitting diodes (PeLEDs), but strategies for enhancing light out-coupling are typically complex and expensive. Here, using a facile solvent treatment strategy, we create a layer of lithium fluoride (LiF) nanoislands that serve as a template to reconstruct the light-extracting interfaces for PeLEDs. The nanoisland interface rearranges the near-field light distribution in order to maximize the efficiency of internal light extraction. With the proper adjustment of the nanoisland size and distribution, we have achieved an optimal balance between charge injection and light out-coupling, resulting in bright, pure-red quasi-two-dimensional PeLEDs with a 21.8% peak external quantum efficiency.

Local Light Field Control Enables Efficient Quantum Dot Color Conversion Films for Mini‐LED Backlit Displays

AbstractQuantum dot (QD) color conversion films (QD‐CCFs) are used in ultrahigh definition (UHD) Mini‐LED backlit displays due to their narrow band emission and high color purity. However, their poor light conversion efficiency (LCE) leads to greater film thickness and thus high cost. Herein, this study proposes a local light field control strategy to enhance the LCE of QD‐CCFs using high‐refractive BN nanosheets. The LCEs of the green and red QD‐CCFs can increase from 29.9% and 34.8% to 67.4% and 91.0% after adding BN nanosheets, respectively. Combining the experimental data with the finite‐difference time domain (FDTD) simulations, the enhanced LCEs can be attributed to observably increased blue light absorption and improved light extraction efficiency of the light emitted from QDs. The white Mini‐LEDs, prepared by integrating the optimized QD‐CCFs containing BN nanosheets with blue Mini‐LED chips, show a high luminous efficiency of 70.2 lm W−1, a high external quantum efficiency of 36.2%, and a wide color gamut of 96.3% Rec. 2020 standards. This work provides an interesting idea for designing high‐efficiency QD‐CCFs toward low‐cost UHD Mini‐LED backlit displays.

Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes

Distributed Bragg reflectors have been widely utilized in GaN-based flip-chip light-emitting diodes (FCLEDs) owing to their excellent reflection performance. Recently, wide reflected angle DBR (WRA-DBR) has been suggested to enhance the optical characteristics of GaN-based FCLEDs by incorporating multiple sub-DBRs with varying central wavelengths. However, the reflectivity of WRA-DBR decreases at large incident angle from 425 nm to 550 nm, which restricts further optical performance improvement of FCLEDs. Here, we demonstrate a quintuple-stack DBR comprised of five sub-DBRs. The quintuple-stack DBR possesses a high reflectivity (>97.5%) for incident angles below 50° within the blue and green light wavelength ranges. Compared to WRA-DBR, quintuple-stack DBR exhibits a higher reflectivity in wavelength range of 425 nm to 550 nm and thinner multilayer thicknesses. Furthermore, stronger electric field intensities exist in the top facet and sidewalls of FCLED with quintuple-stack DBR, revealing that quintuple-stack DBR is beneficial for enhancing the light extraction efficiency. As a result, the light output power of FCLED with quintuple-stack DBR is ∼3% higher than that of FCLED with WRA-DBR at 750 mA.

Bright Innovations: Review of Next-Generation Advances in Scintillator Engineering.

This review focuses on modern scintillators, the heart of ionizing radiation detection with applications in medical diagnostics, homeland security, research, and other areas. The conventional method to improve their characteristics, such as light output and timing properties, consists of improving in material composition and doping, etc., which are intrinsic to the material. On the contrary, we review recent advancements in cutting-edge approaches to shape scintillator characteristics via photonic and metamaterial engineering, which are extrinsic and introduce controlled inhomogeneity in the scintillator's surface or volume. The methods to be discussed include improved light out-coupling using photonic crystal (PhC) coating, dielectric architecture modification producing the Purcell effect, and meta-materials engineering based on energy sharing. These approaches help to break traditional bulk scintillators' limitations, e.g., to deal with poor light extraction efficiency from the material due to a typically large refractive index mismatch or improve timing performance compared to bulk materials. In the Outlook section, modern physical phenomena are discussed and suggested as the basis for the next generations of scintillation-based detectors and technology, followed by a brief discussion on cost-effective fabrication techniques that could be scalable.

Selective Enhancement of Viewing Angle Characteristics and Light Extraction Efficiency of Blue Thermally Activated Delayed Fluorescence Organic Light-Emitting Diodes through an Easily Tailorable Si3N4 Nanofiber Structure.

We selectively improved the viewing angle characteristics and light extraction efficiency of blue thermally activated delayed fluorescence (TADF) organic light-emitting diodes (OLEDs) by tailoring a nanofiber-shaped Si3N4 layer, which was used as an internal scattering layer. The diameter of the polymer nanofibers changed according to the mass ratio of polyacrylonitrile (PAN) and poly(methyl methacrylate) (PMMA) in the polymer solution for electrospinning. The Si3N4 nanofiber (SNF) structure was fabricated by etching an Si3N4 film using the PAN/PMMA nanofiber as a mask, making it easier to adjust parameters, such as the diameter, open ratio, and height, even though the SNF structure was randomly shaped. The SNF structures exhibited lower transmittance and higher haze with increasing diameter, showing little correlation with their height. However, all the structures demonstrated a total transmittance of over 80%. Finally, by applying the SNF structures to the blue TADF OLEDs, the external quantum efficiency was increased by 15.6%. In addition, the current and power efficiencies were enhanced by 23.0% and 25.6%, respectively. The internal light-extracting SNF structure also exhibited a synergistic effect with the external light-extracting structure. Furthermore, when the viewing angle changed from 0° to 60°, the peak wavelength and CIE coordinate shift decreased from 20 to 6 nm and from 0.0561 to 0.0243, respectively. These trends were explained by the application of Snell's law to the light path and were ultimately validated through finite-difference time-domain simulations.

Enhancing the performance of AlGaN-based DUV-LEDs with multifocal laser stealth dicing

In this study, AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) processed via standard laser dicing (SLD) and multifocal laser stealth dicing (MFLSD) were investigated. Adopting the MFLSD technology would generate a roughing surface rather than the V-shaped grooves on the sidewall of 508 × 508 µm2 DUV-LEDs, which would reduce the forward operating voltage and increase the wall-plug efficiency, light output power, and far-field radiation patterns of these devices. In addition, the wavelength shift, far-field patterns, and light-tracing simulation results of the DUV-LEDs processed with SLD and MFLSD were clearly demonstrated and analyzed. Accordingly, it was observed that the MFLSD process provided more possibilities for photon escape to increase the light extraction efficiency (LEE) of DUV-LEDs, thus decreased the wavelength-redshift and junction temperature in DUV-LEDs. These results provide a reference for advanced nano-processing practices implemented during the fabrication of semiconductor devices.

Light-Field Optimization of Deep-Ultraviolet LED Modules for Efficient Microbial Inactivation

Public awareness of preventing pathogenic microorganisms has significantly increased. Among numerous microbial prevention methods, the deep-ultraviolet (DUV) disinfection technology has received wide attention by using the nitride-based light-emitting diode (LED). However, the light extraction efficiency of DUV LEDs and the utilization rate of emitted DUV light are relatively low at the current stage. In this study, a light distribution design (referred to as the reflective system) was explored to enhance the utilization of emitted DUV from LEDs, leading to successful and efficient surface and air disinfection. Optical power measurements and microbial inactivation tests demonstrated an approximately 79% improvement in average radiation power density achieved by the reflective system when measured at a 5 cm distance from the irradiation surface. Moreover, a statistically significant enhancement in local surface disinfection was observed with low electric power consumption. The reflective system was integrated into an air purifier and underwent air disinfection testing, effectively disinfecting a 3 m3 space within ten minutes. Additionally, a fluorine resin film at the nanolevel was developed to protect the light module from oxidation, validated through a 1200 h accelerated aging test under humid conditions. This research offers valuable guidance for efficient and energy-saving DUV disinfection applications.

Optical characteristics of thin film-based InGaN micro-LED arrays: a study on size effect and far field behavior

Micro-light emitting diodes (µ-LEDs) are considered the key enabler for various high-resolution micro-display applications such as augmented reality, smartphones or head-up displays. Within this study we fabricated nitride-based µ-LED arrays in a thin film chip architecture with lateral pixel sizes down to 1 µm. A metal mirror on the p-side enhances the light outcoupling via the n-side after removal of the epitaxial growth substrate. Mounted devices with pixel sizes ranging from 1×1 to 8×8 µm2 were electro-optically characterized within an integrating sphere and in a goniometer system. We measure increased external quantum efficiencies on smaller devices due to a higher light extraction efficiency (LEE) as predicted by wave optical simulations. Besides this size dependence of the LEE, also the far field properties show a substantial change with pixel size. In addition, we compared µ-LEDs with 40 nm and 80 nm thick aluminium oxide around the pixel mesa. Considerably different far field patterns were observed which indicate the sensitivity of optical properties to any design changes for tiny µ-LEDs. The experimentally obtained radiation behavior could be reasonably predicted by finite-difference time-domain simulations. This clearly reveals the importance of understanding and modeling wave optical effects inside µ-LED devices and the resulting impact on their optical performance.

Investigation of optical polarization characteristics of ultraviolet-C AlGaN multiple quantum wells by angle-resolved cathodoluminescence

AlGaN-based ultraviolet-C (UV-C) light-emitting diodes (LEDs) face challenges related to their extremely low external quantum efficiency, which is predominantly attributed to the remarkably inadequate transverse magnetic (TM) light extraction efficiency (LEE). In this study, we employ angle-resolved cathodoluminescence (ARCL) spectroscopy to assess the optical polarization of (0001)-oriented AlGaN multiple quantum well (MQW) structures in UV-C LEDs, in conjunction with a focused ion beam and scanning electron microscopy (FIB/SEM) system to etch samples with various inclination angles (θ) of sidewall. This technique effectively distinguishes the spatial distribution of TM- and transverse electric (TE)-polarized photons contributing to the luminescence of the MQW structure. CL spectroscopy confirms that UV-C LEDs with a θ of 35° exhibit the highest CL signal compared to samples with other θ. Furthermore, we establish a model using finite difference time domain (FDTD) simulation to validate the mechanism of the outcomes. The complementary contribution of TM and TE photons at different specific angles are distinguished by ARCL and confirmed by simulation. At angles near the sidewall, the CL is dominated by the TM photons, which mainly contribute to the increased LEE and the decreased degree of polarization (DOP) to make the spatial distribution of CL more uniform. Additionally, this method allows us to analyze the polarization of light without the need for polarizers, enabling the differentiation of TE and TM modes. This distinction provides flexibility for selecting different emission mode based on various application requirements. The presented approach not only opens up new opportunities for enhanced UV-C light extraction but also provides valuable insights for future endeavors in device fabrication and epitaxial film growth.

Highly Collimated Light Emission of Deep‐Ultraviolet Light‐Emitting Diodes Using Fresnel Zone Plate Nanodiffraction Patterns

Fresnel zone plates (FZPs) are diffractive optical structures composed of many symmetrical concentric rings and are widely used in nanofocusing and beam collimation. In this article, the effect of substrate thickness on the beam collimation and light‐extraction efficiency (LEE) enhancement of deep‐ultraviolet (DUV) micro‐light‐emitting diodes (micro‐LEDs) with FZPs are experimentally analyzed. The far‐field patterns and LEE enhancements of the DUV micro‐LEDs are effectively controlled by the FZPs. Optimization of the substrate thickness provides FZP‐containing DUV micro‐LEDs that display highly collimated, optics‐free emission with an emission‐angle full width at half maximum of 9° and high LEE enhancement of 1.4 times.

Enhancing external quantum efficiency of deep ultraviolet micro-leds through geometry design and multi-physics field coupling analysis

Abstract High-efficiency deep-ultraviolet (DUV) micro light-emitting diodes (LEDs) are explored for inspiring development in numerous fields, such as non-line-of-sight solar-blind communication, optical pumping, and maskless lithography. In this study, we performed FDTD and SimuLED calculations to investigate the optimized DUV micro-LED structure geometry for high light extraction efficiency (LEE) by designing different mesa structures, including square, hexagonal, and circular geometries of micro-LEDs emitted at a wavelength of 275 nm. The results showed that a circular mesa of 5 μm diameter achieved a LEE of 27% from the bottom and sidewall emissions of as-prepared DUV micro-LED. And both the near- and far-field transverse magnetic polarized light intensities were enhanced by a factor of 1.5 over the square and hexagonal mesas. Meanwhile, the transverse electric (TE) polarized light of the circular mesa structure was enhanced and concentrated along the normal direction. Moreover, the internal quantum efficiency (IQE) of circular mesas with varied sizes was comprehensively investigated in the interactions of the thermal and electric fields. An AlGaN-based DUV micro-LED with a diameter of 5 μm was found to obtain the highest IQE owing to a high current-density distribution and its self-heating properties, thereby achieving a sufficiently high external quantum efficiency of 26.75%. This study provides a comprehensive technical report, including electrical, thermal, and optical analyses, and a new perspective for developing high-efficiency, high-performance DUV micro-LEDs in practical applications.

Investigation of a thermally robust orange-red MgO-YMASG: Ce composite phosphor ceramic for white light LED/LD illumination

With its distinctive ability to emit red light with a wavelength surpassing 600 nm, Mg2+-Si4+ co-doped Y3Al5O12: Ce (YMASG: Ce) ceramics emerge as superior candidates for achieving high color rendering and high power white light illumination compared to YAG ceramics. However, due to its higher Stokes energy loss, the orange-red phosphor ceramic YMASG: Ce encounters more pronounced thermal accumulation issues when excited by high-power blue light LEDs/LDs. In response to this challenge, we employed vacuum solid-state sintering technology to fabricate MgO-YMASG: Ce composite phosphor ceramics. As the MgO content increased from 0 to 30 wt%, the thermal conductivity of the samples rose from 5.13 W/(m∙K) to 8.96 W/(m∙K). Additionally, the lower refractive index of MgO effectively enhanced the light extraction efficiency of the ceramics. Consequently, even at a 30 wt% MgO content, the luminescent efficiency of the sample remained comparable to that of YMASG: Ce phosphor ceramics. This suggests that MgO-YMASG: Ce composite phosphor ceramics can serve as high thermal robust orange-red phosphor materials for white light LED/LD illumination.

Enhanced efficiency of deep ultraviolet light-emitting diodes utilizing full-coverage Al reflector and highly reflective Ni/Rh p-electrode

Increasing the reflection of p-side is an effective way to improve the optoelectronic performance of flip-chip light-emitting diodes (FCLEDs). Here, we propose a full-coverage Al reflector (FAR) and a highly reflective Ni/Rh p-electrode to enhance the performance of deep ultraviolet (DUV) FCLEDs. The physical mechanism for the impact of the FAR and Ni/Rh electrode on the light extraction efficiency (LEE) is discussed theoretically. Simulations demonstrate that the combination of the FAR and Ni/Rh electrode improves the LEEs of transverse electric- and transverse magnetic-polarized light by 13.62% and 27.08%, respectively. At an injection current of 100 mA, the fabricated DUV FCLEDs with FAR and Ni/Rh electrode exhibits an external quantum efficiency of 4.01% and a wall plugging efficiency of 2.92%, which are 16.85% and 13.18% higher than those of conventional DUV FCLEDs, respectively. These results support the promise of the FAR and Ni/Rh electrode for high-power DUV LED applications.

Enhancing light extraction efficiency of the inclined-sidewall-shaped DUV micro-LED array by hybridizing a nanopatterned sapphire substrate and an air-cavity reflector

In this work, we hybridize an air cavity reflector and a nanopatterned sapphire substrate (NPSS) for making an inclined-sidewall-shaped deep ultraviolet micro light-emitting diode (DUV micro-LED) array to enhance the light extraction efficiency (LEE). A cost-effective hybrid photolithography process involving positive and negative photoresist (PR) is explored to fabricate air-cavity reflectors. The experimental results demonstrate a 9.88% increase in the optical power for the DUV micro-LED array with a bottom air-cavity reflector when compared with the conventional DUV micro-LED array with only a sidewall metal reflector. The bottom air-cavity reflector significantly contributes to the reduction of the light absorption and provides more escape paths for light, which in turn increases the LEE. Our investigations also report that such a designed air-cavity reflector exhibits a more pronounced impact on small-size micro-LED arrays, because more photons can propagate into escape cones by experiencing fewer scattering events from the air-cavity structure. Furthermore, the NPSS can enlarge the escape cone and serve as scattering centers to eliminate the waveguiding effect, which further enables the improved LEE for the DUV micro-LED array with an air-cavity reflector.

Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching

The fabrication of InGaN-based blue 4✕4 array micro-LEDs (μLEDs) with 40 μm ✕40 μm chip size and 2✕2 array μLEDs with 80 μm ✕80 μm chip size etching by the inductive coupled plasma reactive ion etching (ICPRIE) and defect-free neutral beam etching (NBE) processes was studied in this work. In μLEDs of this size, the influence of defects formation in the sidewalls on EQE was evaluated. There was almost no difference in EQE between μLEDs array etched by the NBE process no matter 40 μm ✕40 μm and 80 μm ✕80 μm, but the dependence was observed in the ICPRIE. Even with this size, it was found that the size effect of EQE is smaller than that in case of using ICPRIE for defect-free neutral beam etching. This impact is substantial since μLED predominantly operated at low current density, around 1–5 A/cm2. Consequently, the reduction of defect density, encompassing both internal and sidewall defects, becomes imperative even in 40–80 μm InGaN-based μLEDs. This not only improves the overall efficiency of μLEDs but also fortifies the brightness stability of μLED displays if process etching by NBE. It was also found that the etching shape had an influence on EQE. It could be attributed to fact that the etching profile angle of NBE was more vertical than that of ICPRIE. Because the different angles of the mesa resulted in different light intensity. The μLEDs emitting with a wavelength of 450 nm, the light extraction efficiency and intensity at a mesa angle 58° of NBE etching μLEDs was about 8% lower than those of an angle (38°) of ICPRIE etching μLEDs by simulation.

Deep Ultraviolet Light Emitting Diode Based on Aluminum Gallium Nitride

AlGaN-based deep ultraviolet LED has gradually attracted people's attention, because it can be used in sterilization, secret communication and other fields. According to the research report of nearly twenty years, there are still many shortcomings in the external quantum efficiency, internal quantum efficiency and light extraction efficiency of AlGaN-based deep ultraviolet LED. For this reason, researchers have made many efforts at the chip level, including epitaxial and doping technology. In recent years, more and more researchers have studied packaging technology with low light efficiency caused by Fresnel and total reflection. In epitaxial technology, this paper mainly introduces the material selection of substrate and the use of buffer layer. In this paper, the most commonly used substrate selection and the existing problems and solutions of substrates are summarized. The current process of buffer layer is also introduced. On the doping level, the present situation and development of N-type doping and P-type doping are introduced respectively. The use of the latest doping elements is introduced in this paper. Packaging technology explains the choice between organic materials and inorganic materials, and how the packaging structure can avoid the reflection loss of light to the maximum extent. Finally, the article predicts the future development direction.

Light Extraction Efficiency Enhancement of White Organic Light-Emitting Diodes (OLEDs) by Micro/Nano-Patterning the Substrate Layer

We demonstrate the enhancement of light extraction efficiency of surface-emitting white Organic Light Emitting Diodes (OLEDs) by incorporating micro/nano-metric structures on the outer surface of the 3-layer substrate (SiO2-Si3N4-SiO2). To enhance light extraction efficiency of the OLEDs, various light scattering structures including plano-convex & plano-concave micro-lens array, flat-top & round-top nano-pillars array, and wavy structures were engraved on the outer surface of the substrate layer. For optimization, we varied the thickness of the internal layers of the OLEDs, and height, width, period, and radius of the micro/nano-scale structures. The performance of the micro/nano-structured OLEDs was simulated and analyzed using Lumerical FDTD and GPVDM simulators. We examined the far field light intensity, transmitted power, angular distribution of light, photon escape probability, photon density, internal & external quantum efficiency, and current-voltage curve of the designed OLEDs. We investigated the results in different locations, especially after the substrate layer: Far Field-1 (0 μm), and Far Field-2 (2.5 μm). Compared to conventional OLEDs, the micro/nano-structured OLEDs showed higher external quantum efficiency. The highest external quantum efficiency of 67.304% (Far Field-1) was detected in the round-top nano-pillars array engraved white OLED having structure period of 1.2 μm. We strongly believe that, the proposed micro/nano-structured white OLEDs are suitable for lighting applications.

High-Performance Tandem Quantum-Dot Light-Emitting Diodes Based on Bulk-Heterojunction-Like Charge-Generation Layers.

In this study, the fundamental but previously overlooked factors of charge generation efficiency and light extraction efficiency (LEE) are explored and collaboratively optimized in tandem quantum-dot light-emitting diodes (QLEDs). By spontaneously forming a microstructured interface, a bulk-heterojunction-like charge-generation layer composed of a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ZnO bilayer is fabricated and an ideal charge-generation efficiency surpassing 115% is obtained. The coupling strength of the waveguide mode for the top unit and the plasmon polariton loss for the bottom unit are highly suppressed using precise thickness control, which increases the LEE of the tandem devices. The red tandem QLED achieves an exceptionally low turn-on voltage for electroluminescence at 4.0V and outstanding peak external quantum efficiency of 42.9%. The ultralow turn-on voltage originates from the sequential electroluminescence turn-on of the two emissive units of the tandem QLED. Benefiting from its unique electroluminescent features, an easily fabricated optical-electrical dual anti-counterfeiting display is built by combining a dichromatic tandem QLED with masking technology.

Packaged structure optimization for enhanced light extraction efficiency and reduced thermal resistance of ultraviolet B LEDs.

Ultraviolet B light-emitting diodes (UVB LEDs) hold promise in medical and agricultural applications. The commonly used sapphire substrate for their epitaxy growth possesses a high refractive index and excellent UV light absorption characteristics. However, this high refractive index can induce total internal reflection (TIR) within the substrate, leading to decreased Light Extraction Efficiency (LEE) due to light absorption within the material. In this study, UVB LED chips were detached from the sub-mount substrate and directly affixed onto an aluminum nitride (AlN) substrate with superior heat dissipation using a eutectic process. This was undertaken to diminish packaged thermal resistance (PTR). Simultaneously, optimization of the UVB LED packaging structure was employed to alleviate LEE losses caused by the TIR phenomenon, with the overarching goal of enhancin external quantum efficiency (EQE). The final experimental findings suggest that optimal LEE is achieved with packaging dimensions, including a length (ELL) of 2 mm, a width (ELW) of 1.62 mm, and a height (ELH) of 0.52 mm. At an input current of 200 mA, the output power reaches 50 mW, resulting in an EQE of 6.3%. Furthermore, the packaged thermal resistance from the chip to the substrate surface can be reduced to 4.615 K/W.

New nanostructure perovskite-based light-emitting diode with superior light extraction efficiency enhancement

The external quantum efficiency (EQE) of a perovskite-based light-emitting diode (PELED) is a key indicator, comprising the internal quantum efficiency (IQE) and light extraction efficiency (LEE). Currently, enhancing EQE faces a major challenge in optimizing LEE. This study introduces an innovative structure to boost LEE, exploring various influencing parameters. The transition from a planar to a domical architecture leverages factors like the waveguiding effect, resulting in a remarkable tenfold increase in LEE, from 6 to 59%. Additionally, investigations into factors affecting LEE, such as altering dipole orientation, material-substrate contact angle, and layer thickness, reveal the potential for further improvement. The optimized structure attains an impressive LEE value of 74%.