Light-emitting Diode Devices Research Articles

Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar 101¯1-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

Efficiently green-emitting and ultra-stable CsPbBr3@SiO2 nanocomposites for white light-emitting diodes

Inorganic oxide especially SiO2 encapsulation strategy is an effective way to improve the stability of all-inorganic cesium lead halide perovskite (CsPbX3, X = Cl, Br, I) nanocrystals (NCs). However, when CsPbX3 NCs are encapsulated in SiO2 by in situ tetraethyl orthosilicate (TEOS) hydrolysis, the unavoidable by-products (water and ethanol) of TEOS hydrolysis commonly damage the structural and optical properties of the CsPbX3 NCs. Herein, TDPA-CsPbBr3 NCs with the dense tetradecylphosphonic acid (TDPA) passivation were pre-prepared and subsequently encapsulated into SiO2 via in situ TEOS hydrolysis. Benefitting from the dense phosphonic passivation layer capable of resisting the erosion of polar by-products generated by TEOS hydrolysis, the obtained TDPA-CsPbBr3@SiO2 nanocomposites maintain the excellent optical properties of the colloidal CsPbBr3 NCs, showing near-unity photoluminescence quantum yield (PLQY) and ultra-narrow full width at half maximum (FWHM). Furthermore, the TDPA-CsPbBr3@SiO2 nanocomposites exhibit outstanding stability against ethanol, UV light, and heating treatment due to the dual protection of dense phosphonate ligand layers and inorganic SiO2 matrix. The white light-emitting diodes (WLED) device was fabricated by sequentially depositing green-emitting TDPA-CsPbBr3@SiO2 nanocomposites and red-emitting K2SiF6:Mn on blue-emitting GaN LED chip. The obtained WLED exhibits excellent luminous performances with standard white emission of CIE Coordinates (0.33, 0.33), a color gamut 138 % of the NTSC and 103 % of Rec. 2020, respectively. This study demonstrates that TDPA-CsPbBr3@SiO2 nanocomposites have a potential application in solid-state lighting and backlight displays.

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

The occurrence and variation of wet-etched structures on R-plane substrates of sapphire were analyzed according to the distribution of drilling rates of typical crystal planes. First, the experiment for etching the sapphire hemisphere was conducted to obtain the distribution of etching rates with C-plane as the rotation center in the experimental etchant (236 °C, three parts H2SO4 and one part H3PO4 in terms of volume). Then, the transfer matrix was applied to transform the distribution of etching rates with C-plane as the rotation center in the experimental etchant (236 °C, three parts H2SO4 and one part H3PO4 in terms of volume) into the distribution of etching rates with R-plane as the rotation center. The positive curvature maximum identification method was then applied to obtain the distribution of drilling rates of typical crystal planes on R-plane substrates. Finally, the occurrence and variation of polygonal grooves with different mask configurations on R-plane substrates in the experimental etchant (236 °C, three parts H2SO4 and one part H3PO4 in terms of volume) were analyzed based on the distribution of drilling rates of typical crystal planes. This provides a basis for the application and development of GaN-based light-emitting diode devices.

Single-crystal strategy towards enhanced carrier mobility of fluorescent molecules for high-efficiency blue OLEDs

The organic single crystal, due to its long-range ordered molecular arrangement, high quality, low defect state density, and excellent luminescent properties, plays an irreplaceable role in the field of optoelectronics and organic light-emitting diodes. By employing strategies for constructing organic single crystals, it is possible to significantly enhance the carrier mobility and stability of devices, leading to superior optoelectronic properties. In particular, in organic light-emitting diode (OLED) devices, the introduction of an organic single crystal luminescent layer can unlock the potential of luminescent materials, extend their operational lifetimes, and enable them to withstand higher current densities. Here, we have grown high fluorescence quantum yield (PLQY) blue-emitting 1,4-bis (2-methylstyryl) benzene (BMSB) molecules in single crystal form. The average mobility has been improved from non-existent in thin films to 0.188 cm2/(V·s) in crystal devices. Additionally, through the rational design of device structures and the enhancement of electrical properties, we have achieved a transition from non-functional thin film devices to stable blue-emitting crystal devices, achieving a current density of 853.60 mA/cm2.

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration.

The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si-based integrated circuits and GaN-enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct crystal symmetries typically bring about uncontrollable polycrystalline GaN formation with considerable surface roughness on standard Si(100). Here a breakthrough of high-quality single-crystalline GaN film on polycrystalline SiO2/Si(100) is presented by quasi van der Waals epitaxy and fabricate the monolithically integrated photonic chips. The in-plane orientation of epilayer is aligned throughout a slip and rotation of high density AlN nuclei due to weak interfacial forces, while the out-of-plane orientation of GaN can be guided by multi-step growth on transfer-free graphene. For the first time, the monolithic integration of light-emitting diode (LED) and photodetector (PD) devices are accomplished on CMOS-compatible SiO2/Si(100). Remarkably, the self-powered PD affords a rapid response below 250µs under adjacent LED radiation, demonstrating the responsivity and detectivity of 2.01×105 A/W and 4.64×1013Jones, respectively. This work breaks a bottleneck of synthesizing large area single-crystal GaN on Si(100), which is anticipated to motivate the disruptive developments in Si-integrated optoelectronic devices.

Improving the Operational Lifetime of Metal-Halide Perovskite Light-Emitting Diodes with Dimension Control and Ligand Engineering.

Perovskite light-emitting diodes (LEDs) have emerged as one of the most propitious candidates for next-generation lighting and displays, with the highest external quantum efficiency (EQE) of perovskite LEDs already surpassing the 20% milestone. However, the further development of perovskite LEDs primarily relies on addressing operational instability issues. This Perspective examines some of the key factors that impact the lifetime of perovskite LED devices and some representative reports on recent advancements aimed at improving the lifetime. Our analysis underscores the significance of "nano" strategies in achieving long-term stable perovskite LEDs. Significant efforts must be directed toward proper device encapsulation, perovskite material passivation, interfacial treatment to address environment-induced material instability, bias-induced phase separation, and ion migration issues.

Expanding Multiple-Resonance Structure of a Double-Borylated Skeleton by Fusing with Indolocarbazole a Multiple-Resonance Donor for Narrowband Green Emission.

Double-borylated multiple-resonance (MR) skeletons are promising templates for high performance, while the chemical design space is relatively limited. Peripheral segments are often used to decorate/fuse MR skeletons and modulate the photophysics but they can also cause unwanted spectral broadening. Herein, a narrowband MR emitter ICzDBA by fusing an MR-featured donor segment indolocarbazole into a double-borylated MR skeleton is developed. In ICzDBA, the nitrogen atom located away from the core benzene ring can also contribute to the generation of the overall MR-featured distribution through the long-range conjugation effect, along with the other boron/nitrogen atoms on the phenyl center. Thus, ICzDBA in toluene displays a narrowband emission peaking at 507nm with a full width at half maximum of merely 20nm (0.09eV). Moreover, organic light-emitting diode devices using ICzDBA emitter exhibit ultrapure green emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.27, 0.70) and a high external quantum efficiency of 32.5%. These results manifest the importance of MR characters of peripheral decorations/fusions in preserving the narrowband features of MR skeletons, which provides a solution for further expanding MR structures with well-maintained narrowband characters.

Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage.

While traditional tunnel junction (TJ) light-emitting diodes (LEDs) can enhance current diffusion and increase hole injection efficiency, their reliance on highly doped AlGaN layers to improve hole tunneling efficiency results in a higher conduction voltage, adversely impacting LED device performance. This paper proposes a non-heavy doped pnp-AlGaN TJ deep ultraviolet (DUV) LED with a low conduction voltage. By inserting the TJ near the active region, between the electron blocking layer and the hole supply layer, the need for heavily doped AlGaN is circumvented. Furthermore, the LED leverages the polarization charge in the pnp-AlGaN TJ layer to decrease the electric field strength, enhancing hole tunneling effects and reducing conduction voltage. The non-heavy doped pnp-AlGaN TJ LED effectively enhances carrier concentration in the quantum well, achieving a more uniform distribution of electrons and holes, thus improving radiative recombination efficiency. Consequently, at an injection current of 120 A/cm2, compared to the traditional structure LED (without TJ), the proposed LED exhibits a 190.7% increase in optical power, a 142.8% increase in maximum internal quantum efficiency (IQE) to 0.85, and a modest efficiency droop of only 5.8%, with a conduction voltage of just 4.1V. These findings offer valuable insights to address the challenges of high heavy doped TJ and elevated conduction voltage in high-performance TJ DUV LEDs.

Synthesis and characterization of a blue host polymer incorporating a chrysene moiety for solution-processed OLEDs

We synthesized two blue fluorescent materials, 6-(3-vinylphenyl)chrysene (St-C) and 6,12-bis(3-vinylphenyl)chrysene (St-C-St), for the first time, incorporating styrene into a chrysene core. These materials were polymerized via radical polymerization, resulting in the formation of polymeric blue-emitting materials, Poly 6-(3-vinylphenyl)chrysene (Poly St-C) and Poly 6,12-bis(3-vinylphenyl)chrysene (Poly St-C-St). Poly St-C exhibited deep blue emission at 395 nm in solution state. We fabricated Organic Light-Emitting Diode (OLED) devices, employing Poly St-C as the host material and 6,12-bis[4-(diphenylamino)phenyl]chrysene (TPA-C-TPA) as the dopant. The OLED device displayed electroluminescence (EL) emission in the deep blue region and achieved Commission Internationale de l‘Éclairage (CIE) coordinates of (0.157, 0.078).

Polarized emission of Cs3Cu2I5 nanowires embedded in nanopores of an anodic aluminum oxide template.

Due to the intrinsic polarized emission property, polarized emissive materials with anisotropic nanostructures are expected to be potential substitutes for polarizers. Herein, by the template-assisted strategy, well-aligned lead-free metal halide Cs3Cu2I5 nanowire (NW) arrays are fabricated by evaporating the precursor ink in the anodic aluminum oxide (AAO) for polarized emission. The Cs3Cu2I5/AAO composite film emits highly polarized light with a degree of polarization (DOP) of 0.50. Furthermore, by changing the molar ratio of CsI/CuI, the stability of Cs3Cu2I5 precursor inks is improved. Finally, an ultraviolet (UV) light-emitting diode (LED) is adopted to pump the composite film to achieve a blue LED device. The reported Cs3Cu2I5/AAO composite film with highly polarized light emissions will have great potential for polarized emission applications such as liquid crystal display backlights, waveguides, and lasers.

Electronic pathway of the exciplex emitters. Unraveling the emission properties from theoretical calculations

Most emissive materials have become significant research findings for building organic light-emitting diode (OLED) devices. Prominent organic electronics reach applications such as displays, lighting, and photodynamic therapy, among others. Thus, the area of organic emitters has rapidly developed thanks to the synergy between theoretical and experimental works.Here, organic emitters are accurately studied, describing their electronic structure, including the electronic transitions, excited state energies, and coupling characteristics. Consequently, a tandem of methodologies, such as density functional theory (DFT) and time-dependent density functional theory (TDDFT), besides the MD-ReaxFF simulations, were employed.Therefore, we focus on exciplex emitters reported as donating-accepting to describe the photophysical process contained in such emitters, establishing electron hopping rates from the monomer and dimeric conformations and assessing the singlet and triplet states. The evaluations of electronic coupling and the reorganization energy (λ) enable the accurate computing of crossing hopping for dimer and free dyes, proposing a reliable scheme of charge transfer properties.These findings bear a novel strategy for studying OLED devices and pave the way for developing more environmentally friendly technologies.

Long Time Atmospheric Oxidation Followed by Hydrofluoric Etching and Hydrosilylation for High‐Efficiency Light‐Emitting Silicon Quantum Dots

AbstractTunable emission wavelength and excellent biocompatibility have positioned silicon quantum dots (Si QDs) as important optoelectronic materials in areas like displays, lighting, and biomedical imaging. However, the challenges of low luminescence efficiency impede the utilization of Si QDs, restraining the advancement of Si QDs‐based light‐emitting diode (LED) devices. This study primarily concentrates on optimizing the surface structure of Si QDs and refining the Si QDs‐based LED device structures. A strategy involving active oxidation followed by hydrofluoric etching and hydrosilylation is proposed to enhance the optical characteristics of Si QDs. A variety of characterization methods are employed to evaluate the impact of the active oxidation on the photoluminescence and surface structures of Si QDs. This approach ultimately achieves an impressive enhancement in the photoluminescence quantum yield (PL QY) of Si QDs from 6.7% to 60.3%. Furthermore, the atmospherically oxidized Si QDs with the highest PL QY are selected as the emitting‐layer material to fabricate LEDs with the structure of ITO/PEDOT:PSS/TFB/Si QDs/ZnMgO/Ag. The introduction of ZnMgO effectively balances charge injection in the Si‐QDs‐based LEDs. As a result, the devices achieve electroluminescence with an external quantum efficiency of 13.2%.

Wear Resistance of Additively Manufactured Resin with Different Printing Parameters and Postpolymerization Conditions.

To evaluate the wear resistance of a printed interim resin manufactured with different printing and postpolymerization parameters. Overall, 130 rectangular resin specimens (15 × 10 × 10 mm) were 3D-printed. Among the specimens, 60 were printed with different printing orientations (0, 45, and 90 degrees) and layer thicknesses (50 and 100 μm) to create six groups to investigate the effects of the printing parameters (n = 10 per group). The remaining 70 specimens were used to evaluate the effects of postpolymerization; for this, seven groups were created as follows (n = 10 per group): nonpostpolymerized; postpolymerized for 5, 15, and 30 minutes with an ultraviolet light-emitting diode (LED) device; and postpolymerized for 5, 15, and 30 minutes with an ultraviolet light bulb device. After masticatory simulation, the wear volume loss was calculated with 3D metrology software. One-way and two-way ANOVA were used for intergroup comparisons (α = .05). The group printed with a build angle of 45 degrees showed lower wear volume loss than the 0- and 90-degree groups (P < .01). The wear volume loss in the ultraviolet LED group was significantly greater than that in the ultraviolet light bulb group (P = .04). No significant difference was observed in the wear volume loss of the printed resin with respect to the layer thickness and polymerization time (P > .05). However, the non-postpolymerized group showed significantly greater wear volume loss than the other groups (P < .001). The printed resin showed greater wear resistance when it was printed at a build angle of 45 degrees and postpolymerized with an ultraviolet light bulb device.

Color-Tunable Perovskite Nanomaterials with Intense Circularly Polarized Luminescence and Tailorable Compositions.

The ability to design halide perovskite nanocrystals (PNCs) with circularly polarized luminescence (CPL) offers exceptional potential in photonic technologies. Despite recent inspiring advances, the creation of PNCs with full-color tailorablity, outstanding CPL, and long-term stability remains a substantial challenge. Herein, a robust strategy to craft CPL-active PNCs is reported, exhibiting appealing full-color tunable wavelengths, enhanced CPL, and prolonged stability. In contrast to conventional methodologies, this strategy utilizes chiral nematic mesoporous silica (CNMS) as host to render in situ confined growth of diverse achiral PNCs. By strategically engineering photonic bandgap, adjusting loading amount of PNCs, and manipulating cations/anion compositions of PNCs, robust CPL responses with tunable wavelength and intensity are successfully obtained. The resulting PNCs-CNMS achieves stable CPL emissions with full-color tunability and impressive luminescent dissymmetric factors up to -0.17. Remarkably, silica-based hosts as a protective barrier confer exceptional resistance to humidity, photodegradation, and thermal stability, even up to 95 °C. Furthermore, the ability to achieve reversible CPL switching within PNCs-CNMS is attainable by leveraging the responsiveness of CNMS matrix or dynamic behavior of impregnated PNCs. Additionally, circularly polarized light-emitting diode devices based on PNCs-CNMS can be conveniently fabricated. This research affords a powerful platform for designing functional chiroptical materials.

Exploring Efficient Dual-Phase Emissive Fluorophores with High Mobility by Integrating a Rigid Donor and Flexible Acceptor.

Developing luminogens with a high emission efficiency in both single-molecule and aggregate states, as well as high mobility, shows promise for advancing the iteration and update of organic optoelectronic materials. However, achieving a delicate balance between the plane configuration of luminophores and the strong exciton interactions of aggregates is a formidable task from the molecular design perspective. This dilemma was overcome by integrating a rigid donor and flexible acceptor to establish donor-acceptor (D-A) type emitters. The π-conjugate-extended donor ensures the substantial planarity of these molecules, allowing strong emission in solution with photoluminescence quantum yield values of 86% and 75%. Furthermore, the restricted molecular motion of the aggregation-induced emission moiety and the formation of J-aggregates reduce the quenching effect, leading to a high emissive efficiency of 85% and 91% in the aggregate state. The mildly distorted D-A geometry builds moderate electrostatic interaction, resulting in high mobility with μM,h of 7.12 × 10-5 and 3.27 × 10-4 cm2/V s. Additionally, an improved synthesized procedure for terminal E-configured acrylonitrile with metal-free and concise reaction conditions is presented. The successful application of the synthesized compounds in organic light-emitting diode devices demonstrates the practicability of the molecular design strategy with connecting a rigid donor and flexible acceptor.

Synthesis of Red, Green, and Blue Carbon Quantum Dots and Construction of Multicolor Cellulose‐Based Light‐Emitting Diodes

Light‐emitting diodes (LEDs) are widely used in lighting and display applications. Carbon quantum dots (CQDs), which have high biocompatibility, high resistance to photobleaching, and full‐spectrum luminescence, have inherent advantages as fluorescent materials for LED devices. Herein, multicolor CQDs are prepared by a new reagent engineering strategy due to the difference of effective conjugate length and the surface electron‐withdrawing groups of CQDs. White CQDs are realized by mixing blue, green, and red CQDs proportionally. Then, the aggregation‐caused quenching phenomenon of CQDs is suppressed through the hydrogen‐bonding network of cellulose nanofibrils (CNFs). Multicolor fluorescent films are prepared from CQDs and CNFs by simple mixing and casting methods. Finally, thin‐film encapsulation based on the photosensitive resin ABPE‐10 coating can be realized and rapidly assembles into fluorescent films with different light‐emitting colors into LED devices, leading to have superior thermal performance compared with conventional LEDs. White LEDs have excellent white‐light illumination performance, with Commission Internationale de L’Eclairage color coordinates of (0.33, 0.37), a correlated color temperature of 5688 K, and a color rendering index of 86. This strategy provides a convenient and scalable pathway for low‐cost, environmentally friendly, and high‐performance CQDs‐based LEDs.

Blue-emitting fluorophosphate phosphor to enhance color rendition of near-ultraviolet LED white light

&lt;span&gt;This work presents a novel blue phosphor, Na&lt;sub&gt;2&lt;/sub&gt;MgPO&lt;sub&gt;4&lt;/sub&gt;F: Eu&lt;sup&gt;2+&lt;/sup&gt; (NMPF: Eu) for violet 405-nm light-emitting diode (LED) devices. The compound is synthesized via a simple one-step sintering process using readily available precursors. Notably, NMPF: Eu exhibits highly efficient and thermally stable blue emission when excited by violet light. The NMPF: Eu is applied to produce a white LED device driven by a 405 nm LED chip and Y3Al5O12: Ce3+ (YAG: Ce) yellow phosphor. The impacts of NMPF: Eu phosphors are investigated by varying their particle size while maintaining consistent doping concentrations. Impressively, the LED prototype displays a substantial reduction in blue light emission while generating white light with enhanced color rendering and luminous properties. These results highlight the suitability and potential of NMPF: Eu as a promising phosphor for widening violet LED applications, especially in generating white light perceptible to the human eyes.&lt;/span&gt;

Charge generation layer with Yb assistant interlayer for tandem organic light-emitting diodes

Tandem organic light-emitting diode (OLED) devices require an efficient charge generation layer (CGL) between two stacked OLED units. In this study, a CGL with an Yb assistant interlayer was fabricated and investigated. The optical transmittance and charge generation performances of the CGLs were analyzed with respect to the Yb thickness. The best result was obtained at a Yb thickness of 3 nm, at which both the electrical and optical properties exhibited optimal performances. The optical transmittance was greater than 90 %; this was superior to the performances using Ag and Al interlayers. The insertion of a 3-nm Yb layer reduced the threshold voltage from 18 to 6 V. Capacitance measurements revealed that the insertion of the Yb layer enhanced charge generation in the CGLs, reducing the threshold voltage and enhancing charge transport. The tandem OLED device fabricated using Bphen:Liq/Yb/MoO3/TAPC as a CGL exhibited a 1.92 × enhancement in the current efficiency, which is nearly twice the ideal value, compared to a single-unit device. Thus, Yb is a promising candidate for use as an assistant interlayer in CGLs for high-performance tandem OLED devices.

Novel UV-B Phototherapy With a Light-Emitting Diode Device Prevents Atherosclerosis by Augmenting Regulatory T-Cell Responses in Mice.

Ultraviolet B (UV-B) irradiation is an effective treatment for human cutaneous disorders and was shown to reduce experimental atherosclerosis by attenuating immunoinflammatory responses. The aim of this study was to clarify the effect of specific wavelengths of UV-B on atherosclerosis and the underlying mechanisms focusing on immunoinflammatory responses. Based on light-emitting diode technology, we developed novel devices that can emit 282 nm UV-B, which we do not receive from natural sunlight, 301 nm UV-B, and clinically available 312 nm UV-B. We irradiated 6-week-old male atherosclerosis-prone Apoe-/- (apolipoprotein E-deficient) mice with specific wavelengths of UV-B and evaluated atherosclerosis and immunoinflammatory responses by performing histological analysis, flow cytometry, biochemical assays, and liquid chromatography/mass spectrometry-based lipidomics. Irradiation of 282 nm UV-B but not 301 or 312 nm UV-B significantly reduced the development of aortic root atherosclerotic plaques and plaque inflammation. This atheroprotection was associated with specifically augmented immune responses of anti-inflammatory CD4+ Foxp3 (forkhead box P3)+ regulatory T cells in lymphoid tissues, whereas responses of other immune cells were not substantially affected. Analysis of various lipid mediators revealed that 282 nm UV-B markedly increased the ratio of proresolving to proinflammatory lipid mediators in the skin. We demonstrated that 282 nm UV-B irradiation effectively reduces aortic inflammation and the development of atherosclerosis by systemically augmenting regulatory T-cell responses and modulating the balance between proresolving and proinflammatory lipid mediators in the skin. Our findings indicate that a novel 282 nm UV-B phototherapy could be an attractive approach to treat atherosclerosis.

InCl3-Assisted Surface Defects Restoring to Enhance Lead-Free Cs2ZrCl6 Nanocrystals for X-Ray Imaging and Blue LED Applications.

As one type of recent emerging lead-free perovskites, Cs2ZrCl6 nanocrystals are widely concerned, benefiting from the eminent designability, high X-ray cutoff efficiency, and favorable stability. Improving the luminescence performance of Cs2ZrCl6 nanocrystals has great importance to cater for practical applications. In view of the surface defects frequently formed by the liquid phase method, the particle morphology and surface quality of this material are expected to be regulated if certain intervention is made in the synthesis process. In the work, differing from normal cell lattice modulation based on the ion doping, the grain size and surface morphology of Cs2ZrCl6 nanocrystals are optimized via adding a certain amount of InCl3 to the synthetic solution. The surface defects are restored to inhibit the defect-induced non-radiative transition, resulting in the improvement of the luminescence properties. Moreover, a flexible Cs2ZrCl6@polydimethylsiloxane film with excellent heat, water, and bending resistance and a light-emitting diode (LED) device are fabricated, exhibiting excellent application potential for X-ray imaging and blue LED.