Light Emission Imaging Research Articles

Space and time structure of helium pulsed surface-wave discharges at intermediate pressures (5–50 Torr)

In this paper, the ignition and development of a plasma created by pulsed surface wave discharges (PSWDs) was experimentally investigated using time-resolved imaging techniques and optical spectroscopy in helium at intermediate gas pressures between 5 and 50 Torr. We found that the ionization front moves at a few km s−1 during the ignition phase and decreases to hundreds of m s−1 after only some tens of µs. Once the plasma has reached a sufficient length, a standing wave pattern is observed in the light emission of the discharge. We attribute its formation to the reflection of the surface wave on the ionization front, which results in a pattern of nodes and antinodes. We have also determined the time and space evolution of the gas temperature. It is shown that the gas temperature increases from the room temperature value to a plateau at several hundreds of degrees over a short time (typically 100 µs). These results supports those obtained by light emission imaging and also show that the standing wave pattern does not affect the gas temperature.

Ignition dynamics in an annular combustor for liquid spray and premixed gaseous injection

Ignition is of importance in many combustion applications and raises fundamental and practical issues. The light-round process corresponding to the flame spreading phase in the ignition of annular combustors is examined in this article by performing experiments in a model scale configuration “MICCA-Spray”. This system features 16 swirling injectors each comprising a hollow cone pressurized injector. Experiments are carried out with premixed gases as well as n-heptane and dodecane sprays. The flow, spray and flame are first characterized in a single injector configuration. Propagation from the initial kernel created by a spark plug is then observed using high speed light emission imaging. This provides flame structures at various times during the process and gives access to the time delays for flame merging. With n-heptane and dodecane fuel injection, it is found that the light-round process is similar to the one observed under fully premixed propane/air experiments but the duration of the process is augmented especially for the less volatile fuel. It is also confirmed that the delay is notably influenced by thermal conditions prevailing in the chamber at the moment of ignition, injection process and fuel composition. Making use of a flamelet like model of the combustion process, the relative changes in light-round time delay are found to be, to the first order, proportional to the relative changes in laminar burning velocity induced by the fuel spray in the air flow.

Different Flame Patterns Linked With Swirling Injector Interactions in an Annular Combustor

Experiments in cold and reactive conditions carried out in linear arrays of injectors indicate that the flows established by neighboring injectors exhibit alternating patterns if the distance between two injectors is too small (see, for example, ASME-GT2013-94280, GT2014-25094, and GT2015-42509). This issue is investigated in this article by making use of a recently developed annular combustion chamber (ACC). This device designated as MICCA is equipped with multiple swirling injectors and its side walls are made of quartz providing full optical access to the flame region, thus allowing detailed studies of the combustion region structure and dynamics. Experiments reported in this article rely on direct observations of the flame region through light emission imaging using two standard cameras and an intensified high-speed CMOS camera. The data gathered indicate that interactions between successive injectors give rise to patterns of flames which exhibit an alternate geometry where one flame has a relatively low expansion angle while the next spreads sideways. This pattern is then repeated with a period which corresponds to twice the injector spacing. Such arrangements arise when the angle of the cup used as the end-piece of each injector exceeds a critical value. The effects of mass flow rate, equivalence ratio, and injector offset are also investigated. It is shown that the angle which defines the cup opening is the main control parameter. It is also found that when this angle exceeds a certain value and when the laminar burning velocity is fast enough, the flame pattern switches in an unsteady manner between two possible configurations. It is shown that these alternating flame patterns lead to alternating heat release rate distributions and inhomogeneous heat transfer to the chamber walls featuring a helicoidal pattern. Conditions leading to alternating flame patterns are finally discussed by making use of a recent flow regime diagram.

TH-AB-204-05: Real-Time Prevention of Radiation ‘mistakes’ Using Cherenkov Light Emission

Purpose: To determine the feasibility of using real-time imaging of Cherenkov light emission from an object’s surface for the qualitative identification of radiation ‘mistakes’. Methods: A highly sensitive camera was used to image the Cherenkov light emitted for a solid water phantom. A Varian 2100CD was used to deliver 500 MU for a 6 MV photon beam operating a dose rate of 600 MU/min, and the chosen imaging system and geometry provided data with a field of view of 30×30 cm, at 10 FPS, at a resolution of approximately 0.6 mm. Three mistake scenarios were imaged, two static errors (1) incorrect jaw size for stereotactic delivery using a 20 mm cone, (2) incorrect wedge angle applicator for a 10×10 cm field, and a dynamic errors (3) MLC leaf error and (4) incorrect collimator or gantry angle for IMRT delivery. Results: Using the real-time results of Cherenkov light emission imaging, the incorrect jaw size setting for SRS or SRT and incorrect wedge angle applicator were clearly identified in the first captured image. For the detection of a MLC leaf error, the proposed method was able to provide 4 frames per field, and detect leaf errors down to 1 mm and collimator and gantry errors down to 1 deg. Discussion and Conclusions: While the results in this feasibility study were performed using a solid water phantom, the technique could be readily applied in-vivo, as Cherenkov light emission imaging is completely non-invasive and requires no external materials to be introduced into the Linac or radiation beam path. For the detection of static errors, by providing real-time information after a single MU of delivery, further incorrect radiation field delivery could be avoided. Furthermore, dynamic errors in leaf positioning collimator or gantry angle could be detected in real-time down to 1 mm or 1 deg.

Light emission efficiency and imaging performance of Lu2O3:Eu nanophosphor under X-ray radiography conditions: Comparison with Gd2O2S:Eu

Nanocrystallic europium-activated lutetium oxide (Lu2O3:Eu) is a strong candidate for use in digital medical imaging applications, due to its spectroscopic and structural properties. The aim of the present study was to investigate the imaging and efficiency properties of a 33.3mg/cm2 Lu2O3:Eu scintillating screen coupled to a high resolution RadEye HR CMOS photodetector under radiographic imaging conditions. Since Lu2O3:Eu emits light in the red wavelength range, the light emission efficiency and the imaging performance were compared with results for a Gd2O2S:Eu phosphor screen. Parameters such as the Absolute Efficiency (AE), the X-ray Luminescence Efficiency (XLE), and the Detector Quantum Gain (DQG), were investigated. The imaging characteristics of Lu2O3:Eu nanophosphor screen were investigated in terms of the Modulation Transfer Function (MTF), the Normalized Noise Power Spectrum (NNPS) and the Detective Quantum Efficiency (DQE). It was found that Lu2O3:Eu nanophosphor has higher AE and XLE by a factor of 1.32 and 1.37 on average, respectively, in the whole radiographic energy range in comparison with the Gd2O2S:Eu screen. DQG was also found higher in the energy range from 50kVp to 100kVp and comparable thereafter. The imaging quality of Lu2O3:Eu nanophosphor coupled to the CMOS sensor was found to outmatch in any aspect in comparison with the Gd2O2S:Eu screen. These results indicate that Lu2O3:Eu nanophosphor could be considered for further research in order to be used in medical imaging applications.

Plasma formation in a double-gap vircator

Time-resolved light emission imaging was used to observe the plasma formation within the cavity of the double-gap vircator powered by a sub-microsecond generator (∼500 kV, ∼10 kA, ∼500 ns). The vircator generated well reproducible S-band microwave pulses of ∼200 MW peak power and up to 200 ns full duration. The plasma light emission was observed ∼30 ns prior to the ending of the generated microwave pulses at the surface of the aluminum foil separating the vircator cavity gaps, in the gap where the virtual cathode is formed. Estimations showed that the energy deposition into the foil by the high-current electron beam is sufficient for the surface plasma formation. The plasma ions accelerated toward the virtual cathode neutralize its electron space charge. The latter was confirmed by the increase in the electron current transmitted through the vircator cavity. In addition, the time of the plasma appearance was determined by comparing the measured transmitted current with that following from the one-dimensional model of a stationary un-neutralized two-stream electron flow. This time agrees with the maximum of the microwave power observed in the experiments, thus showing that the plasma ions cause the termination of the microwave generation.

Light emission efficiency and imaging performance of powder scintillator under x‐ray radiography conditions

To evaluate Gd2O2S:Eu powder phosphor as a radiographic image receptor and to compare it to phosphors often used in radiography. Gd2O2S:Eu is nonhygroscopic, emitting red light with decay time close to that of Gd2O2S:Tb. The light intensity emitted per unit of x-ray exposure rate (absolute luminescence efficiency) was measured for laboratory prepared screens with coating thicknesses of 33.1, 46.4, 63.1, 78.3, and 139.8 mg/cm2 and tube voltages ranging from 50 to 140 kVp. Parameters related to image quality such as the modulation transfer function (MTF) and the detective quantum efficiency (DQE) were also experimentally examined. In addition, a previously validated Monte Carlo code was used to estimate intrinsic x-ray absorption and optical properties, as well as the MTF and the Swank factor (I) of the Gd2O2S:Eu scintillators. Gd2O2S:Eu light intensity was found higher than that of single CsI:T1 crystal for tube voltages up to 100 kVp. The MTF and the DQE were found to be comparable with those of Gd2O2S:Tb and CsI:T1 screens. MTF estimated by the Monte Carlo code was found very close to the experimental MTF values. Gd2O2S:Eu showed peak emission in the wavelength range 620-630 nm. Its emission spectrum was excellently matched to various optical detectors (photodiodes, photocathodes, CCDs, and CMOS) employed in flat panel detectors. Gd2O2S:Eu is an efficient phosphor potentially well suited to radiography and especially to some digital detectors sensitive to red light.

Observation of Plasma at the Quartz Rod Inside Annular Electron Beam Produced From a Knife-Edge Cathode in a Magnetic Field

Time-resolved light emission imaging was used to observe the plasma formation at the surface of a dielectric rod serving as a slow-wave supporting structure in an antenna-amplifier Cherenkov maser configuration. Experiments were performed using a quartz rod inserted into the hollow knife-edge cathode of a magnetically insulated foilless diode generating an annular electron beam of 0.9-1.7-kA current. The accelerating voltage pulse was delivered to the diode by a linear induction accelerator; the voltage amplitude ranged from 260 to 380 kV at the full pulse duration of ~ 200 ns. It was shown that the plasma at the rod surface is produced in the vicinity of the cathode edge plane corresponding to the location of the strong tangential electric field component. This plasma appears later than the explosive emission plasma at the cathode edge, and the intensity of light from this plasma increases, while the voltage rises. At voltages below 300 kV, the measured side-view light intensity drastically decreases, which indicates a significant decrease in the plasma density. It has been found that the surface plasma does not propagate along the rod; yet, the presence of plasma at a distance of 5-10 cm from the cathode was registered sporadically at high voltages. The electron emission from the surface plasma was observed as well.

Light emission efficiency and imaging properties of YAP:Ce granular phosphor screens

Phosphor materials are used in medical imaging combined with radiographic film or other photodetectors. Cerium (Ce3+) -doped scintillators are of particular interest for medical imaging, because of their very fast response. YAP:Ce scintillator-based image detectors have already been evaluated in single-crystal form and under conditions of positron emission tomography and synchrotron or γ-ray irradiation. Furthermore, YAP:Ce phosphor has been evaluated in conjunction with radiographic films. The present work reports experimental and theoretical data concerning the light output absolute luminescence efficiency (AE) of the YAP:Ce screens under irradiation conditions employed in medical X-ray projection imaging (i.e., in diagnostic radiology). projection imaging (i.e., in diagnostic radiology). YAP:Ce phosphor screens with surface densities ranging between 53 and 110 mg/cm2 were prepared by sedimentation on fused silica substates in our laboratory. The resulted surface density of the screens was determined by dividing the phosphor mass deposited on the screen surface with the area of the surface. Additionally this work addresses the imaging performance of YAP:Ce by estimation of the detective quantum efficiency (DQE), i.e., the square of the signal to noise ratio transfer. Absolute efficiency was found to decrease with X-ray tube voltage for for YAP:Ce phosphor. The highest experimental efficiency was obtained for the 53.7 mg/cm2 and 88.0 mg/cm2 YAP:Ce screens. The highest DQE value was found for the 88.0 mg/cm2 screen irradiated at 60 kVp.

Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes

Using light emission imaging (LEI), we have determined that not all planar defects in 4H-SiC PiN diodes expand in response to bias. Accordingly, plan-view transmission electron microscopy (TEM) observations of these diodes indicate that these static planar defects are different in structure from the mobile stacking faults (SFs) that have been previously observed in 4H-SiC PiN diodes. Bright and dark field TEM observations reveal that such planar defects are bounded by partial dislocations, and that the SFs associated with these partials display both Frank and Shockley character. That is, the Burgers vector of such partial dislocations is 1/12<4-403>. For sessile Frank partial dislocations, glide is severely constrained by the need to inject either atoms or vacancies into the expanding faulted layer. Furthermore, these overlapping SFs are seen to be fundamentally different from other planar defects found in 4H-SiC.

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

SiC BJTs show instability in the I-V characteristics after as little as 15 minutes of operation. The current gain reduces, the on-resistance in saturation increases, and the slope of the output characteristics in the active region increases. This degradation in the I-V characteristics continues with many hours of operation. It is speculated that this phenomenon is caused by the growth of stacking faults from certain basal plane dislocations within the base layer of the SiC BJT. Stacking fault growth within the base layer is observed by light emission imaging. The energy for this expansion of the stacking fault comes from the electron-hole recombination in the forward biased base-emitter junction. This results in reduction of the effective minority carrier lifetime, increasing the electron-hole recombination in the base in the immediate vicinity of the stacking fault, leading to a reduction in the current gain. It should be noted that this explanation is only a suggestion with no conclusive proof at this stage.

Light emission efficiency and imaging performance of Y3Al5O12: Ce (YAG: Ce) powder screens under diagnostic radiology conditions

In this study Y3Al5O12: Ce powder scintillator was evaluated for use in X-ray imaging detectors. This phosphor, also known as YAG: Ce scintillator or P-46 phosphor, is a non-hygroscopic, emitting green light with very short decay time. These properties are very attractive for X-ray imaging. Y3Al5O12: Ce powder was used to prepare various test screens (33–166 mg/cm2). Absolute luminescence efficiency measurements were performed for various X-ray tube voltages (50–130 kVp). In addition parameters related to image quality such as the modulation transfer function and the detective quantum efficiency were examined. A theoretical model, describing radiation and light transfer, was employed to fit experimental data and to estimate values of optical parameters. Absolute efficiency was found to decrease with X-ray tube voltage. Highest efficiency was obtained for the 107 mg/cm2 screen. Light attenuation coefficients were close to those of green emitting rare earth scintillators. At low spatial frequencies the detective quantum efficiency was high for the 107–166 mg/cm2 screens. The light emission efficiency and imaging performance of Y3Al5O12: Ce was not better than currently employed scintillators. However due to its very fast response and high spectral compatibility to optical sensors it may be considered for use in digital imaging detectors.

Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

Using site-specific plan-view transmission electron microscopy (TEM) and light emission imaging, we have identified stacking faults formed during forward biasing of 4H-SiC p-i-n diodes. These stacking faults (SFs) are bounded by Shockley partial dislocations and are formed by shear strain rather than by the condensation of vacancies or interstitials. Detailed analysis using TEM diffraction contrast experiments reveal SFs with leading carbon-core Shockley partial dislocations as well as with the silicon-core partial dislocations observed in plastic deformation of 4H-SiC at elevated temperatures. The leading Shockley partials are seen to relieve both tensile and compressive strain during p-i-n diode operation, suggesting the presence of a complex inhomogeneous strain field in the 4H-SiC layer.

Stacking-fault formation and propagation in 4H-SiC PiN diodes

Stacking-fault growth in SiC PiN diodes has been examined using light-emission imaging and stressing at 80 A/cm2 and 160 A/cm2. Dark areas in the emission develop because of stacking faults and the current capability of the diode drops. More detailed images are produced by reducing the current by a factor of 1000. The low-current images are bright lines at dislocations bounding the stacking faults and at or near the stacking-fault intersection with the surface. Stacking faults nucleate 1-2 µm below the surface. Most, but not all, continue growing until they span the diode. Growth dynamics and their dependence on the current density are discussed.

Extended Defects in 4H-SiC PiN Diodes

ABSTRACTUsing site-specific plan-view transmission electron microscopy (TEM) and lightemission imaging (LEI), we have identified SFs formed during forward biasing of 4H-SiC PiN diodes. These SFs are bounded by Shockley partial dislocations and are formed by shear strain rather than by condensation of vacancies or interstitials. Detailed analysis using TEM diffraction contrast experiments reveal SFs with leading carbon-core Shockley partial dislocations as well as with the silicon-core partial dislocations observed in plastic deformation of 4H-SiC at elevated temperatures. The leading Shockley partials are seen to relieve both tensile and compressive strain during PiN diode operation, suggesting the presence of a complex and inhomogeneous strain field in the 4H-SiC layer.

Long-term light emission measurement and imaging during the early stages of electrical breakdown in epoxy resin

An ultra-sensitive photomultiplier and large-area light collection optics were used with a high-sensitivity charge-coupled device camera to detect and image the long-term light emission behaviour during electrical tree initiation in pin-plane CT200 epoxy resin samples under constant alternating current voltage stress. The observed light emission is interpreted in terms of electroluminescence due to charge injection/extraction at the pin-tip followed by slow material degradation and eventual failure of the metal pin-resin interface. Interface failure is a prelude to formation of microchannels that result in tree initiation. High-resolution charge-coupled device imaging of the electroluminescence reveals that the maximum light emission occurs at the pin-tip and is still observable 10 mu m into the resin. Under long-term continuous electrical stress, the light emission is found to spread principally along the cone of the pin rather than into the resin.