Polycrystalline LuFeO3 (LFO) thin films were prepared on multilayer Pt/Ta/glass substrates. The ferroelectric hysteresis loop of the LFO thin film exhibited a remanent polarization of about 5.7 μC/cm2. The ferroelectric hysteresis loop of the LFO thin film deposited at a relatively slow rate provides valuable information about its recoverable energy density (8.8 J/cm3) and loss energy density (9.3 J/cm3), resulting in an estimated energy storage efficiency of around 49%. The LFO thin film had triangular grains with a diameter of approximately 90 nm, which well reflects the crystallinity of hexagonal LFO. From the local piezoelectric d33 hysteresis loops of a triangular grain, it was confirmed that the edge of a triangular grain had a remanent d33 value larger than the center of a triangular grain. Additionally, a mosaic domain structure of the LFO thin film was well correlated with the AFM image. By applying the Landau, Lifshitz, and Kittel (LLK) scaling law, it was confirmed that the LFO thin films have a domain wall energy lower than that of PbTiO3 thin films.
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