Lifetime measurements of individual rotational levels in excited states of hafnium oxide and hafnium sulfide have been performed using population probing by resonant two-photon ionization in a molecular beam. For the b 3Π 1 state of HfO rotational levels in the vibrational level v=0 were found to have lifetimes in the region 650–700 ns. For the D 1Π state of HfS rotational level lifetimes in the vibrational levels v=0 and v=1 were determined to be around 240 ns. The technique used here provides very accurate results and the uncertainty in the reported values is only about 2%. Possible sources of errors are examined. The absorption oscillator strengths from the ground state are calculated.