Methyl ammonium lead halide materials CH3NH3PbI3 and CH3NH3Pb(I0.95Br0.05)3 were prepared as thin films via different established deposition techniques onto micro structured gold electrode arrays on Si/SiO2 wafers. Scanning electron microscopy was performed to analyze the morphology of the different films. Electrical measurements of the samples showed hysteresis in the I–V characteristics for all samples in the dark and under illumination. Persistent changes in the polarization of the perovskite films were observed following positive or negative poling leading to significant changes in the observed current density and residual current at zero applied bias. At higher bias voltages additional inverted hysteresis loops were measured pointing at a decrease in barrier width and/or height at the blocking perovskite/metal contact by migrating iodide ions. Correspondingly, the net I–V characteristics in this voltage range could be modeled by two diodes operated back‐to‐back. Time‐dependent studies were performed to analyze the decay of the different observed polarization phenomena in the films during either short‐circuit or continuous sweeping of the bias. Implications of such persistent polarization and barrier formation for use of the materials for next‐generation solar cell devices are discussed.