Silicon Carbide Layers Research Articles

Multiscale, mechanistic modeling of irradiation-enhanced silver diffusion in TRISO particles

Tristructural isotropic (TRISO) particles are under consideration for use in several proposed advanced nuclear reactor concepts. The silicon carbide (SiC) layer in TRISO acts as a barrier to prevent the release of the fission products. However, despite remarkable retention, silver (Ag) release has been observed from intact particles, which requires investigation since the Ag isotope (110m Ag) has a long half-life. Previous work focused on developing a multiscale, mechanistic model for Ag diffusion accounting for temperature and microstructure effect and has been successfully validated. In this work, we expand the previous model to account for irradiation-enhanced Ag diffusivity in SiC and improve its accuracy over a wider grain size and temperature ranges relevant for advanced reactor conditions. A temperature, grain size, and flux dependent diffusivity is therefore derived using the mesoscale code MARMOT and implemented in the fuel performance code BISON. The irradiation-enhanced Ag diffusivity in SiC is compared against experimental data and validated using BISON against Ag release measurements from the Advanced Gas Reactor Fuel Development and Qualification Program (AGR-1 and AGR-2). Herein, we quantify the impact of SiC grain size, irradiation, and temperature on Ag release. In agreement with previous studies, we find accounting for SiC grain size improves agreement between BISON predictions and experimental observations for most cases. We also find that accounting for irradiation improves agreement for cases where Ag release was underestimated, but the impact was less significant than accounting for microstructure.

Colloidal 2D Layered SiC Quantum Dots from a Liquid Precursor: Surface Passivation, Bright Photoluminescence, and Planar Self-Assembly.

We report the bottom-up synthesis of colloidal two-dimensional (2D) layered silicon carbide (SiC) quantum dots with a cubic structure, lateral size of 5-10 nm, ⟨110⟩ exfoliation to few atomic layers, and surface passivation with 1-dodecene. Samples shielded from oxygen and plasma-annealed for purity exhibit narrow blue photoluminescence (PL) with quantum yields (QYs) over 60% in exceptional cases, while unshielded nanocrystals (NCs) exhibit broad blue/green/white PL with 10-15% QY. The latter scenario is attributed to excess surface carbon and oxygen accrued during synthesis and processing, with size separation through ultracentrifugation revealing size-dependent impurity emission. In contrast, the shape of the bright narrow blue PL shows little variation with NC size, while in both scenarios, the maximum QY occurs near four atomic layers. When dried under heat, the disk-like NC suspensions are observed to aggregate into microscale domains, with further self-assembly into planar superlattice domains with common crystalline orientation. The results are compared with photophysical simulations and bring clarity to the broad emission commonly reported for top-down approaches, while inspiring bottom-up schemes directed at improved material quality.

Understanding Ag liquid migration in SiC through ex-situ and in-situ Ag-Pd/SiC interaction studies

The effective containment of fission products (FPs) within tri-structural isotropic (TRISO) fuel particles is crucial for the safety and efficiency of High Temperature Gas-cooled Reactors (HTGRs). Combining multi-scale (µm to nm) and multi-dimensional (2D and 3D) analysis, this study focuses on the migration mechanisms of silver (Ag), for which the Ag-110 m FP isotope is radiotoxic, facilitated by reactions with palladium (Pd) alloys and the silicon carbide (SiC) layer at elevated temperatures (1300–1500 °C). Three primary pathways for Ag migration are identified: (1) diffusion in solid palladium silicide to form (Pd,Ag)2Si, (2) infiltration through cracks and pores in the carbon phase, and (3) liquid phase migration along SiC grain boundaries. Especially at temperatures above the melting point of Pd2Si (1404 °C), a ‘dissolution-recrystallisation’ mechanism is proposed of the Ag-Pd-Si liquid phase migrating along SiC grain boundaries. The study employs state-of-the-art in-situ heating transmission electron microscopy (TEM) techniques to directly observe the dynamic migration processes of Pd silicide within SiC, providing unprecedented insights into the liquid behaviour in TRISO fuel. These findings highlight the significant role of liquid phases in determining the transport of FPs through the TRISO-SiC which is vital for developing strategies that enhance the safety and efficacy of HTGRs.

Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered Substrates

Power devices electronics based on Silicon Carbide (SiC) are emerging as a breakthrough technology for various applications. The link between the quality of SiC substrates and device performance has been widely discussed [1]. Smart Cut™ technology offers the opportunity to integrate a high quality SiC layer on a low resistivity handle wafer. Moreover the crystal quality of a single donor wafer can be replicated multiple times to provide an epitaxy-ready substrate in high volume [2]. Nevertheless, some extended grown-in defects of SiC starting material, like micro-pipes or bulk inclusions, may generate surface defects called "Crystal Originated Defects" (COD) on transferred layers. This paper explains how SmartSiC™ defect density can be reduced by limiting the number of extended defects on donor wafers. Specific inspection recipes were developed to monitor the starting material and the replicated engineered substrate: COD root-causes and effects were analyzed. We demonstrated how a well-suited quality control of donor wafers plays a major role to guarantee defect-free SmartSiC™ wafers.

Preparation of silicon carbide reticulated porous ceramics with enhanced thermal shock resistance and high combustion efficiency

As the most prospective media material for porous media burners, silicon carbide reticulated porous ceramic (SiC RPC) is required to possess a high porosity to fulfill efficient combustion, as well as exceptional thermal shock resistance to withstand the thermal stress generated during the start-up and shutdown processes. To achieve the strengthening and toughening of highly porous SiC RPC, three-layered struts were constructed, and in-situ whiskers were formed in SiC RPC through vacuum infiltration and sintering under a nitrogen atmosphere in this work. The results indicated that the three-layered struts were formed after the preform was conducted with vacuum infiltration, encompassing a mullite coating, a silicon carbide layer and a mullite inner layer. When Si powder and flake graphite were incorporated into the SiC slurry, numerous SiC whiskers were formed in situ within the SiC skeleton. The formation of SiC whiskers was attributed to the enhancement of SiC RPC, resulting in an increase in CCS from 0.22 MPa to 0.55 MPa. Additionally, the residual strength retention rate after water quenching at 1100 °C was elevated from 41.6 % to 70.2 %. Moreover, the SiC RPC containing SiC whiskers exhibited an impressively high porosity of 83 %, leading to a surface temperature of 688 °C and a heating efficiency of 16.4 °C/min during the combustion process.

Analysis of gas-cooled micro modular reactor (MMR) fuel

The gas-cooled micro modular reactor (MMR) is a novel concept with a compact fuel form consisting of thousands of tri-isotropic fuel (TRISO) particles dispersed in a silicon carbide matrix. The MMR fuel has a high volume packing fraction and is horizontally placed within graphite channels. This study demonstrates that the horizontal arrangement of MMR fuel within graphite channels resulted in a non-uniform gap between the fuel and graphite brick, leading to an "off-center" temperature distribution within the fuel, and resulting in differences in TRISO performance even within sub-zones positioned symmetrically in the radial direction. Given the complexity of the fuel structure and the challenges involved in simulation, a multi-scale and multi-physics coupled analysis method of MMR fuel was realized in this work by implementing physical models into the open-source finite element platform MOOSE. Thermal-mechanical analysis and failure analysis within sub-zones of the typical design MMR fuel during normal operation were conducted through simulation. The results indicate that higher-temperature sub-zones exhibit increased internal pressure within TRISO and show greater tensile stress in the Chemical Vapor Deposited Silicon Carbide (CVD-SiC) layer. Regarding fuel failure analysis, this work found limited impact from Pd penetration and kernel migration. Pressure-induced particle failure, closely associated with stress in CVD-SiC, emerges as the primary failure criterion. The probability of fuel failure is relatively low, and interfacial cohesive parameters have an impact on the SiC stress and the fuel failure probability at the highest level.

Impact of temperature variations on BISON predictions of Ag release in AGR-1 and AGR-2 experiments

Understanding and quantifying the release of fission products like silver (Ag) from TRistructural ISOtropic (TRISO) fuel particles is important to assess the safe operation of advanced high temperature reactors. Although the silicon carbide (SiC) layer of TRISO particles is effective as the main fission product barrier, Ag can be released from intact TRISO particles. A mechanistic model for the effective Ag diffusivity, Deff, was previously developed as a function of temperature and microstructure variables informed by atomistic modeling of Ag diffusivity. In this study, we use this model to explore how experimental temperature uncertainties impact the overall predicted Ag release. This analysis indicates that calculated temperature uncertainties have a significant impact on the overall Ag release predictions. Furthermore, we show that the time average volume average (TAVA) temperature is not an appropriate proxy for the detailed temperature histories to predict fission product release due to the Arrhenius dependence of Ag diffusivity with respect to temperature. The detailed temperature histories, therefore, provide the most accurate results and are of most importance for modeling efforts. Overall, this work shows the importance of considering the experimental uncertainty of the temperature on computational predictions of fission product transport and release and the need for more accurate temperature histories from future experiments.

Fracture mechanics approach to TRISO fuel particle failure analysis

Weibull stress-based methods for failure probability assessment have been developed and analyzed to assess the integrity of tristructural isotropic (TRISO) fuel particles during fuel life cycles and accident operating conditions. While simple, these methods entail a number of drawbacks when stress concentrates near crack tips, including finite element mesh size dependency when the Weibull stress is averaged over the finite element domain. Fracture mechanics approaches involving the use of interaction integrals eliminate this lack of mesh convergence and produce consistent fracture predictions. In this work, we use an interaction integral approach to computing stress intensity factors for a crack in the inner pyrolytic carbon layer perpendicular to the silicon carbide layer, which is simplified representation of a failure mode in TRISO particles. The interface between these two TRISO layers has been shown to become porous, which we simulate by considering a transition of mechanical properties over such porous length, i.e. the layers are modeled as a functionally graded material. Aspects such as porosity and thermal and irradiation eigenstrains are considered in computing the stress intensity factor from a fracture mechanics approach and compared with the known Weibull stress failure approach. The methodology introduced in this paper enables a more general fracture probability assessment in TRISO particles and eliminates the need to identify best suited parameters when using local or averaged stress-based failure criterion. Finally, the numerical sensitivity studies show how parameters such as the porous transition zone length, the material stiffness, and creep affect the probability of TRISO fuel particle failure.

Fano resonance and enhanced sensing in the excitation of the surface phonon polariton

The surface phonon polariton is a collective oscillation mode of phonons and incident electromagnetic waves in polar dielectric materials. Compared with the surface plasmon polariton, it has low loss and can be applied to the mid-infrared band. A surface phonon resonance sensor based on waveguide-coupling is proposed. The sensor structure is a typical Kretschmann configuration consisting of a germanium (Ge) prism, a silicon carbide (SiC) layer, an indium selenide (In2Se3) film, a titanium dioxide (TiO2) film, and the surrounding dielectric. The reflectivity possesses significant asymmetric Fano resonance dips. In sensing applications, the waveguide-coupling structure yields a sensitivity by intensity of 11278RIU−1 and a figure of merit of 10344RIU−1. Our investigation provides an alternative method for refractive index sensing, thus opening up opportunities for the design of various phonon devices based on Fano resonance.

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir-Blodgett films on silicon substrate.

Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir-Blodgett (LB) films on a Si substrate at 1000 °C in vacuum. After rapid thermal annealing of GLC films at 1100 °C and 1200 °C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spintronics.

Multiphysics Analysis of PLOFC and DLOFC Accidents in the HTGR-TR

High-temperature, gas-cooled reactors (HTGRs) are promising advanced reactor designs. Leveraging passive safety features, higher core outlet temperatures, previous commercial operational experience, and potential coupling with nonelectrical systems, HTGRs present many advantages over traditional light water reactors and other advanced reactor designs. The High-Temperature, Gas-Cooled Test Reactor (HTGR-TR) is a point design developed by Idaho National Laboratory as a response to the need for the expansion of U.S. test reactor capabilities. The HTGR-TR was designed to serve as a test reactor for Generation-IV small modular prismatic block HTGRs and to provide irradiation data, two crucial contributions to the development of advanced reactors. As in any reactor design, it is necessary to understand the behavior of the reactor during accident scenarios to determine the overall safety of the design. Pressurized loss of forced cooling (PLOFC) and depressurized loss of forced cooling (DLOFC) are two accidents that can occur in HTGRs and that present challenges to decay heat removal. In order to understand the behavior of the fuel during these accidents, the resulting mechanical behavior and fission product migration in the fuel are evaluated. Using the HTGR-TR design, which utilizes tristructural isotropic (TRISO) fuel, a multiphysics analysis during the PLOFC and DLOFC transients was performed. This study utilizes neutronics, thermal hydraulics, and fuel performance modeling to analyze the behavior of TRISO particles during steady-state operation and the described transients. This analysis aims to characterize the hoop stress and strain during the transients, as well as predict fission product migration and radiological release. Due to the startup conditions of the HTGR-TR, the silicon carbide (SiC) layer for both of the transients and steady-state conditions are initially in compression for both the hoop stress and strain. The DLOFC transient at the beginning of cycle was the most challenging overall to the fuel, having the closest to tensile behavior and the closest to tensile strain. Because the integrity of the SiC layer was not challenged during any of the transients, the release of 90Sr and 137Cs was found to be negligible. The PLOFC transient at the end of cycle resulted in the largest 110mAg release and subsequent radioactivity increase. However, the increase in radioactivity was minor when compared to typical operating conditions due to the relatively large diffusivity of 110mAg though SiC at normal operating temperatures. Highlights include Neutronics and thermal-hydraulic modeling generating steady-state and transient conditions for use in fuel performance analysis.2. Detailed BISON analysis demonstrating the excellent performance of TRISO fuel during PLOFC and DLOFC transients.3. Fuel behavior showing negligible fission product release.

Boosting phonon transport across AlN/SiC interface by fast annealing amorphous layers

The high increase in interface density has become the main bottleneck for heat dissipation in gallium nitride/aluminum nitride (AlN)/silicon carbide (SiC) based nanodevices. In this paper, the interfacial thermal conductance (ITC) of AlN/SiC interface is investigated by non-equilibrium molecular dynamics simulation. It is found that introducing amorphous layers at AlN/SiC interface will result in an enhancement of its ITC by 2.32 times. Three different amorphous layers are investigated and can be achieved by fast thermal annealing. Among them, the amorphous SiC layers work best, and the amorphous AlN layers work worst. Further spectral analysis reveals that the enhancement of ITC comes from the strengthening of interfacial inelastic phonon processes, which boosts the transport of modes at a wide frequency range. What is more, as the thickness of amorphous layers increases, the enhancement of ITC weakens. This research provides a highly operational strategy to enhance ITC and enriches our understanding of inelastic phonon process at interface.

Accelerated thermal property mapping of TRISO advanced nuclear fuel

TRistructural ISOtropic (TRISO) fuel is a leading-edge nuclear fuel form representing a departure from the more traditional nuclear fuel forms utilized in the reactor fleet of today. Rather than a monolithic fuel pellet of uranium dioxide, integral fuel forms containing TRISO fuel are composed of thousands of microencapsulated uranium-bearing fuel kernels and individually coated with multiple layers of pyrolytic carbon and silicon carbide. These multilayered ceramic coatings serve as an environmental barrier to ensure radioactive and chemically reactive fission products are contained within the reactor fuel elements, but also participate in the transfer of heat generated in the nuclear fuel to the coolant – the primary purpose of a nuclear reactor. Since traditional thermal property measurement techniques, such as laser flash analysis, would be unable to resolve the thermal properties of the individual TRISO coating layers, a simplified frequency-domain thermoreflectance technique has been developed to rapidly map the thermal properties of TRISO particles. Using this technique, the thermal properties of TRISO particles have been mapped from room temperature up to 1000 °C to examine the spatial variation and temperature-dependency of the thermal properties within each layer. Additionally, spatial-domain thermoreflectance was used to examine the anisotropy of the thermal properties for each layer at different locations within a single TRISO particle, and across multiple TRISO particles to assess the intra- and inter-particle uniformity of thermal properties, respectively. To elucidate the underlying causes for the measured variations in thermal properties, scanning electron microscopy and Raman spectroscopy were used to examine variations in microstructure and chemical bonding within the different coating layers. Results from this work are then compared with previous examinations of TRISO fuel particles and microstructurally driven mechanisms for the variations in the measured thermal properties of the different carbonaceous layers are discussed.

Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface

The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si substrate with a transition layer of porous silicon porSi/cSi and a hybrid substrate involving a silicon carbide layer grown with matched substitution of the atoms on the surface of porous silicon SiC/porSi/cSi. A complex analysis performed using a set of structural and spectroscopic techniques demonstrated that the epitaxial growth of the nuclear AlN layer on all types of the substrates in a N-enriched environment resulted in the formation of AlxGa1-xN/AlN heterostructures with a Ga-polar surface, which was realized only on the SiC/porSi/cSi substrate. The layer of AlxGa1-xN on cSi and porSi/cSi substrates was in the state of disordered alloy with an excess of gallium atom content. It was shown that a great difference in the lattice parameters of a substrate–film pair resulted not only in the appearance of a number of various defects but also in a considerable effect on the chemical process of the formation of the alloys, in our case, the AlxGa1-xN alloy. It was shown that nanoscale columns of AlxGa1-xN formed on SiC/porSi/cSi substrate were inclined relative to the c-axis, which was connected with the features of the formation of a SiC layer by the matched substitution of the atoms on the porous Si substrate, resulting in the formation of the inclined (111) SiC facets at the boundary of the (111) Si surface and pores in Si. Optical studies of the grown samples demonstrated that the optical band-to-band transition for the AlxGa1-xN alloy with Eg = 3.99 eVB was observed only for the heterostructure grown on the SiC/porSi/cSi substrate. A qualitative model is proposed to explain the difference in the formation of AlxGa1-xN layers on the substrates of cSi, porSi/cSi and SiC/porSi/cSi. The results obtained in our work demonstrate the availability of using SiC/porSi/cSi substrates for the integration of silicon technology and that used for the synthesis of nanoscale columnar AlxGa1-xN heterostructures using plasma-activated molecular-beam epitaxy with a nitrogen source.

Fabrication of beryllium oxide based fully ceramic microencapsulated nuclear fuels with dispersed TRISO particles by pressureless sintering method

In this research paper, two types of tristructural isotropic (TRISO) particles were dispersed within beryllium oxide (BeO) matrix using the pressureless sintering method to create fully ceramic microencapsulated (FCM) nuclear fuel. The findings indicated that TRISO particles with an outermost layer comprising silicon carbide (SiC) can establish interfacial bonding with BeO matrix, while those with an outermost layer comprising pyrocarbon (OPyC) and BeO matrix exhibit a noticeable gap after the sintering process. Results from transmission electron microscopy (TEM) revealed the presence of an amorphous phase transition zone between SiC and BeO. This zone, according to molecular dynamics (MD) simulation results, is an amorphous phase composed of Be, Si, and O atoms. Overall, TRISO particles with an outermost layer of SiC are more suitable for sintering with BeO matrix than those with an outermost layer of OPyC.

Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates

Problems of the growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on hybrid substrates involving porous silicon and silicon carbide layers by molecular beam epitaxy technique with plasma-activated nitrogen are discussed in this study. The epitaxial growth of nanoscale columnar AlxGa1-xN/AlN heterostructure is shown to be specified by the layer of silicon carbide, which is formed by atomic substitution technique, and a porous silicon sublayer predetermines the oriented growth of SiC. The performed complex of structural-spectroscopic analysis demonstrated that epitaxial growth of the nuclear AlN layer on all types of the substrates in N-enriched conditions resulted in the formation of AlxGa1-xN/AlN heterostructures with Ga-polar surface. At the same time it was found that the layer of ordered AlxGa1-xN alloy was formed only on the hybrid SiC/porSi/cSi substrate. The layer of AlxGa1-xN on the substrates of cSi and porSi/cSi is present in the state of disordered alloy with an excess content of gallium atoms. Nanocolumns of AlxGa1-xN/AlN grown on the hybrid SiC/porSi/cSi substrate have two types of preferential azimuthal orientation that affects not only their structural and optical properties but also the value of elastic deformation in the heterostructure nanoscale layers. For the first time, azimuthal dependence of intensity of E1(TO) and E2high photon modes was detected in the Raman spectra. The observed periodicity angle in micro-Raman scattering coincides with the characteristic swivel of nanoscale columns of AlxGa1-xN/AlN around c-axis according to the data of XRD pole figure measurements. Results obtained in our work show promising capabilities in the use of SiC/porSi/сSi substrates for integration of silicon technology and technology of synthesis of the nanoscale columnar AlxGa1-xN heterostructures by molecular-beam epitaxy with plasma-activated nitrogen.

Effects of Interfacial Electron Transport on Field Electron Emission from Carbon Nanotube Paste Emitters.

Field electron emission from carbon nanotubes (CNT) is preceded by the transport of electrons from the cathode metal to emission sites. Specifically, a supporting layer indispensable for adhesion of CNT paste emitters onto the cathode metal would impose a potential barrier, depending on its work function and interfacial electron transport behaviors. In this paper, we investigated the supporting layer of silicon carbide and nickel nanoparticles reacted onto a Kovar alloy (Fe-Ni-Co) cathode substrate, which has been adopted for reliable CNT paste emitters. The X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and electrical conductivity measurements showed that the reaction of silicon carbide and nickel nanoparticles on the Kovar metal strongly depends upon the post-vacuum-annealing conditions and can be classified into two procedures of a diffusion-induced reaction (DIR) and a diffusion-limited reaction (DLR). The prolonged annealing at 750 °C for 5 h before the main annealing of the CNT paste emitters at 800 °C for 5 min led to the DIR that has enhanced the Ni silicide phase and a lower potential barrier for the interfacial electron transport, resulting in increased and weakly temperature-dependent field electron emission from the CNT paste emitters. On the other hand, the DLR with only the main anneal of the CNT paste emitters at 800 °C for 5 min gave rise to a higher potential barrier for the electron transport and so lower and strongly temperature-dependent field electron emission. From the results of the interfacial electron transport for the DIR and DLR mechanisms in the CNT paste emitters, we concluded that the ambient temperature dependency of field electron emission from CNT tips in the moderate range of up to 400 °C, still controversial, is mainly attributed to the supporting layer of the CNT emitter rather than its intrinsic electron emission.

Effect of a silicon dioxide diffusion barrier layer and its sublimation on the migration of strontium implanted into SiC

Thin film diffusion barriers are inevitable in nuclear reactors for preventing the release of radioactive waste products. The combination of chemical stable silicon carbide (SiC) and silicon oxide (SiO2) layers has been considered being beneficial, thus, we studied the migration and stability of strontium implanted SiC upon annealing, owing an additional SiO2 surface layer. Our investigations show that annealing at 1100 and 1200 °C retained the Sr atoms in comparison to pure SiC and induced strong strontium segregation at the SiO2/SiC interface and SiO2 surface. However, this enhanced the sublimation of the SiO2 layer, while pure SiO2 layers (i.e., without impurities) showed no sublimation after annealing under the same conditions. On the other hand, higher temperatures at 1300 and 1400 °C, resulted also in significant sublimation of the pure SiO2 layer.

Temperature Dependence of 3С-SiC Growth During Rapid Vacuum Thermal Silicon Treatment

The paper presents the results of a study of the structure, phase composition, and growth kinetics of silicon carbide epitaxial layers on silicon substrates during their rapid vacuum thermal treatment. Transmission electron microscopy revealed the formation of layers of the cubic polytype SiC (3C-SiC) on silicon during carbidization in the temperature range of 1000–1300 °C. It was found that the formation of SiC layers proceeds in two stages, characterized by different activation energies. In the lower temperature range from 1000 to 1150 °C, the activation energy of the SiC growth process is Ea = 0.67 eV, while in the temperature range from 1150 to 1300 °C, the activation energy increases by almost an order of magnitude (Ea = 6.3 eV), which indicates a change in the limiting physical process. It has been established that the type of conductivity and the orientation of the substrate affect the thickness of the formed SiC layers. In this case, the greatest thickness of silicon carbide layers is achieved on silicon substrates with (111) orientation of p-type conductivity.

Graphene oxide coated silicon carbide films under projectile impacts

The quest for hybrid materials to withstand extreme loading conditions has been a canonical field of research over the past decades. As an emerging hybrid material, graphene oxide (GO)-silicon carbide (SiC) offers remarkable thermo-chemo-mechanical properties with applications in defense, energy, and aerospace engineering. Researches to unravel the various properties of the aforementioned material subjected to different loading conditions have been on the rise to further promote its potential for the pertinent industries. Nonetheless, impact resistance characterization of such composite received less attention due to experimental and computational difficulties. Here, the aforementioned problem is investigated by leveraging ReaxFF molecular dynamics simulations. Accordingly, the response of 4H-SiC thin films coated by GO samples under indentation and high-velocity projectile impact is assessed. It is found that (a) composite films containing GO samples with higher oxidation degree demonstrate softer behavior under indentation, and (b) fracture pattern and penetration-resistance under high-velocity impact are contingent on the oxidation degree of the coating layers. In essence, impact-induced complete perforation is more localized to the impacted zone as oxidation degree of the coating layers increases. Therefore, oxidation content can be considered as a novel tuning factor for the fracture behavior of the GO-SiC thin films under projectile impacts. The influence of oxygen functional groups on the interaction energy between GO and SiC layers are also discussed. The findings of this study reveal some insights into the bottom-up design pathways for developing novel protective barriers in which GO is used as a coating layer or reinforcement for SiC ceramics.