AbstractThis study deals with the quantitative assessment of the coverage and thickness of Ni silicide films formed during annealing of SiC substrates with sputtered thin films of Ni. The analytical approach involves the use of XPS and depth profiling by means of successive ion etchings and XPS analyses. For either 3 or 6 nm initial Ni film thickness, a 10 nm Ni2Si product is formed. On top of this product, the C released is accumulated in a very thin (1–2 nm) film. In neither case, the Ni2Si covers the whole surface, although the coverage is almost complete (∼90%) in the latter case. For the greater initial Ni‐film thickness of 17 nm, the thickness of the Ni2Si product corresponds well to the value of 25 nm expected from the Ni/Ni2Si stoichiometric relationship. This thickness is significantly greater than a critical level and the film covers the whole surface. Carbon is similarly accumulated in a very thin layer on the top surface, although the major part of C (∼70%) is found inside the main reaction product layer. Copyright © 2008 John Wiley & Sons, Ltd.
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