Au Layer Research Articles

Au – MoS2 nanoflowers sensors on interdigitated electrode for monitoring human respiration

Abstract Respiratory humidity sensors are essential for monitoring breath conditions in a variety of applications such as respiratory disease diagnosis, sleep apnea screening, and personalized medicine. With the increasing prevalence of respiratory diseases, such as asthma, chronic obstructive pulmonary disease (COPD), and sleep apnea, they have become essential tools for healthcare professionals, researchers and individuals. However, existing humidity sensors often suffer from poor sensitivity, slow response, and limited flexibility. In this paper, we report a novel Au – MoS2 respiratory humidity sensor that exhibits high resistivity, fast response, and excellent flexibility. The sensor is fabricated by drop casting a thin layer of Au decorated MoS2 on copper interdigitated electrodes (fabricated using copper clad PCB). The increase in the intensity of the peak was observed in Au – MoS2 hybrids in comparison to MoS2 analyzed using micro–Raman Spectroscopy. Using scanning electron microscopy (SEM), the morphology of MoS2 was observed, confirming its flower like structure. The Au nanoparticles were detected on the edges of MoS2, confirmed by transmission electron microscope (TEM).
The interfacial electronic interaction suggests that there is the formation of Schottky barrier between Au and MoS2 as confirmed by X–Ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The improved electronic interaction results in better sensing properties. The high dielectric constant and excellent surface-to-volume ratio of the MoS2 layer make it extremely sensitive to humidity; the Au nanoparticles offer good electrical conductivity and mechanical flexibility in its place. The study tested a respiratory sensor in a simulated environment, finding it more responsive to breathing and quick to return to rest. This suggests potential for the Au-MoS2 sensor in tracking breath states due to its sensitivity and adaptability, promising applications across various fields.

Simulation analysis of a photonic crystal fiber refractive index sensor based on a double-layer film structure and surface plasmon resonance technology

A photonic crystal fiber surface plasmon resonance sensor based on a double-layer membrane structure is designed and analyzed. In the simple sensing structure with only one air hole size, TiO2 and Au layers with specific thicknesses are sequentially coated on the optical fiber to form a double-layer structure. The sensing characteristics of the double-layer membrane structure are studied by the finite element method. Compared to the single-layer membrane structure, the double-layer membrane sensor has significant sensing properties such as a better wavelength sensitivity and a smaller full width at half maximum in the loss spectrum. In the refractive index range between 1.37 and 1.43, the maximum wavelength sensitivity and average wavelength sensitivity of the sensor are 19,900 nm/RIU and 7417 nm/RIU, respectively, and the resolution can be up to 5.03×10−6RIU. The proposed photonic crystal fiber optic sensor achieves high performance with a simpler sensing structure than previous photonic crystal fiber optic sensors, and eliminates the step of polishing, which will greatly reduce the difficulty of actual fabrication and the error due to uneven polishing. The results show that the photonic crystal fiber optic sensor with a double-layer membrane structure has excellent performance. Due to its high sensitivity and resolution, it has great potential for applications in environmental monitoring, biosensing and chemical sensing.

A flexible nanostructured multimodal sensor based on surface plasmon resonance

Biosensors are of great significance for human health and safety monitoring, especially the sensor based on Surface Plasmon Resonance (SPR), widely used in biomolecular detection. Improving its sensitivity has always been the focus of research. In this paper, SPR in grating structures was primarily investigated and then a SPR-based nanoscale metal grating sensor was proposed. With Finite Difference Time Domain (FDTD) simulation, optimization of the sensor's duty ratio, thickness of the Gold (Au) layer, and periodic parameters was conducted. Then sensitivity and quality factor of the sensor are analyzed to obtain the optimal sensor parameters. With a grating period of 0.64 μm, Au layer thickness of 30 nm, and sensor's fill factor of 0.625, the sensor achieves a sensitivity of 0.417 μm/refractive index unit (RIU), demonstrating optimal performance. Additionally, Abaqus tensile simulations were performed on the grating imprinting section, validating the uniformity and consistency of strain in the Polydimethylsiloxane (PDMS) substrate-Au film grating structure during stretching. Finally, a combination mold based on acrylic material is designed, effectively addressing the challenging demolding characteristics of cured PDMS material, offering an efficient manufacturing approach for PDMS substrate fabrication. The SPR-based nanoscale grating multimodal sensor designed in this paper exhibits high sensitivity and potential cost-effectiveness in protein molecule detection and flexible stress-strain sensing applications, revealing promising broad prospects for practical utilization.

Dynamic multicolor electrochromic skin in high-brightness flexible WO3/Au asymmetric Fabry–Perot nanocavity fabricated on Nylon 66 porous substrate

Recently, the Fabry–Perot (F–P) cavity electrochromic devices, which are constructed by combining nano-size inorganic electrochromic material WO3 and reflective metal layers, have attracted considerable attention due to their potentials in the fields of dynamic multicolor displays and active camouflage. However, in the few studies that have been reported, the peak reflectance of flexible F–P cavity multicolor electrochromic devices in the visible wavelength band is generally lower than 30 %, which limits their reflective display and camouflage effects in high-brightness environments. Thus, we have combined multicolor reflective electrochromic electrodes in WO3/Au asymmetric F–P nanocavity constructed by magnetron sputtering on a Nylon 66 porous substrate with a highly transparent UV-cured gel electrolyte and a PET plastic sealing procedure. As a result, a flexible and dynamic multicolor electrochromic skin with high reflectance (Rmax＞50 %) and excellent flexibility (bending radius of 4 mm) has been fabricated. The WO3 electrochromic layer at the top works as the dynamic dielectric layer in the broadband absorption Fabry–Perot cavity, and the inert metal Au layer at the bottom works as the reflective layer. The WO3/Au asymmetric F–P cavity can acutely capture the variation in optical constants of WO3 due to the thickness change and electric-driven effects. This cavity facilitates the selective reflection and absorption of the energy distribution of the spectrum after the induced interferometric resonance. As a result, the cavity exhibits a rich array of structural colors, including ocher, taupe, yellow, orange, green, and violet. The electrochromic skin exhibits a fast switching time and maintains 99.43 % of the optical modulation amplitude (ΔR) after 110 coloring/bleaching cycles. It provides a potential option in the field of flexible high-brightness reflective displays and dynamic camouflage in the future.

Near-infrared detection based on the excitation of hot electrons in Au/Si microcone array

Although the photoresponse cut-off wavelength of Si is about 1100 nm due to the Si bandgap energy, the internal photoemission effect (IPE) of the Au/Si junction in Schottky detector can extend the absorption wavelength, which makes it a promising candidate for the Si-based infrared detector. However, due to low light absorption, low photon–electron interaction, and poor electron injection efficiency, the near-infrared light detection efficiency of the Schottky detector is still insufficient. The synergistic effect of Si nano/microstructures with a strong light trapping effect and nanoscale Au films with surface plasmon enhanced absorption may provide an effective solution for improving the detection efficiency. In this paper, a large-area periodic Si microcone array covered by an Au film has successfully been fabricated by one-time dry etching based on the mature polystyrene microspheres lithography technique and vacuum thermal deposition, and its properties for hot electron-based near infrared photodetection are investigated. Optical measurements show that the 20 nm-thick Au covered Si microcone array exhibits a low reflectance and a strong absorption (about 85%) in wide wavelength range (900–2500 nm), and the detection responsivity can reach a value as high as 17.1 and 7.0 mA W−1 at 1200 and 1310 nm under the front illumination, and 35.9 mA W−1 at 1310 nm under the back illumination respectively. Three-dimensional finite difference time domain (3D-FDTD) simulation results show that the enhanced local electric field in the Au layer distributes near the air/Au interface under the front illumination and close to the Au/Si interface under the back illumination. The back illumination favors the injection of photo-generated hot electrons in Au layer into Si, which can explain the higher responsivity under the back illumination. Our research is expected to promote the practical application of Schottky photodetectors to Si-compatible near infrared photodetectors.

Transfer of High-Temperature-Sputtered BiFeO3 Thin Films onto Flexible Substrates Using α-MoO3 Layers.

Inducing external strains on highly oriented thin films transferred onto mechanically deformable substrates enables a drastic enhancement of their ferroelectric, magnetic, and electronic performances, which cannot be achieved in films on rigid single crystals. Herein, the growth and diffusion behaviors of BiFeO3 thin films grown at various temperatures is reported on α-MoO3 layers of different thicknesses using sputtering. When the BiFeO3 thin films are deposited at a high temperature, significant diffusion of Fe into α-MoO3 occurs, producing the Fe1.89Mo4.11O7 phase and suppressing the maintenance of the 2D structure of the α-MoO3 layers. Although lowering the deposition temperature alleviates the diffusion yielding the survival of the α-MoO3 layer, enabling exfoliation, the BiFeO3 is amorphous and the formation of the Fe1.89Mo4.11O7 phase cannot be suppressed at the crystallization temperature. High-temperature-grown BiFeO3 thin films are successfully transferred onto flexible substrates via mechanical exfoliation by introducing a blocking layer of Au and measured the ferroelectric properties of the transferred films.

Concomitant Near-Infrared Photothermy and Photoluminescence of Rod-Shaped Au52(PET)32 and Au66(PET)38 Synthesized Concurrently.

Gold nanoclusters exhibiting concomitant photothermy (PT) and photoluminescence (PL) under near-infrared (NIR) light irradiation are rarely reported, and some fundamental issues remain unresolved for such materials. Herein, we concurrently synthesized two novel rod-shaped Au nanoclusters, Au52(PET)32 and Au66(PET)38 (PET = 2-phenylethanethiolate), and precisely revealed that their kernels were 4 × 4 × 6 and 5 × 4 × 6 face-centered cubic (fcc) structures, respectively, based on the numbers of Au layers in the [100], [010], and [001] directions. Following the structural growth mode from Au52(PET)32 to Au66(PET)38, we predicted six more novel nanoclusters. The concurrent synthesis provides rational comparison of the two nanoclusters on the stability, absorption, emission and photothermy, and reveals the aspect ratio-related properties. An interesting finding is that the two nanoclusters exhibit concomitant PT and PL under 785 nm light irradiation, and the PT and PL are in balance, which was explained by the qualitative evaluation of the radiative and non-radiative rates. The ligand effects on PT and PL were also investigated.

Concomitant Near‐Infrared Photothermy and Photoluminescence of Rod‐Shaped Au52(PET)32 and Au66(PET)38 Synthesized Concurrently

AbstractGold nanoclusters exhibiting concomitant photothermy (PT) and photoluminescence (PL) under near‐infrared (NIR) light irradiation are rarely reported, and some fundamental issues remain unresolved for such materials. Herein, we concurrently synthesized two novel rod‐shaped Au nanoclusters, Au52(PET)32 and Au66(PET)38 (PET = 2‐phenylethanethiolate), and precisely revealed that their kernels were 4 × 4 × 6 and 5 × 4 × 6 face‐centered cubic (fcc) structures, respectively, based on the numbers of Au layers in the [100], [010], and [001] directions. Following the structural growth mode from Au52(PET)32 to Au66(PET)38, we predicted six more novel nanoclusters. The concurrent synthesis provides rational comparison of the two nanoclusters on the stability, absorption, emission and photothermy, and reveals the aspect ratio‐related properties. An interesting finding is that the two nanoclusters exhibit concomitant PT and PL under 785 nm light irradiation, and the PT and PL are in balance, which was explained by the qualitative evaluation of the radiative and non‐radiative rates. The ligand effects on PT and PL were also investigated.

MEMS reconfigurable terahertz meta-absorber with polarization-dependent and sensing characteristics

This study presents and demonstrates a design of a micro-electro-mechanical system (MEMS) reconfigurable terahertz (THz) metamaterial absorber (TMA) that shows tunable free spectra range with a maximum value as 166 GHz in transverse magnetic mode and switchable resonance from 1.24 THz to 1.53 THz. The unit structure of TMA consists of two movable rectangular resonators aside and an x-shaped resonator at the center comprising two c-shaped resonators connected upside down. The material configuration of TMA is typical of the metal–insulator-metal sandwich configuration. That is a bottom Au layer preventing the penetration of the THz wave, a dielectric SiO2 layer to accommodate and absorb the incident wave, and a patterned Au structure array to select the resonant frequency. The electromagnetic response of TMA could be flexibly modulated when the structure is reconfigured by changing the gaps between x-shaped resonators and rectangular resonators based on the MEMS platform. Meanwhile, owing to the asymmetry of resonant structure, the electromagnetic response of TMA could be tuned from single-, dual-, triple- quad-resonances by varying the polarization state of incidence. Furthermore, the sensitivity of TMA is explored and demonstrated with remarkable linearity under a variation of the surrounding environment refractive index from 1.0 to 2.0. The feasibility of TMA is validated as the experimental absorption spectra are well meet the simulation results. The above results indicate the proposed TMA possesses great potential applications in multiple resonance switches, polarization switches, and highly efficient environmental sensors.

Analysis of the Microstructure and Mechanical Performance of Resistance Spot-Welding of Ti6Al4V to DP600 Steel Using Copper/Gold Cold-Sprayed Interlayers.

In this article, an attempt was made to join DP600 steel and Ti6Al4V titanium alloy sheets by resistance spot-welding (RSW) using an interlayer in the form of Cu and Au layers fabricated through the cold-spraying process. The welded joints obtained by RSW without an interlayer were also considered. The influence of Cu and Au as an interlayer on the resulting microstructure as well as mechanical properties (shear force and microhardness) of the joints were determined. A typical type of failure of Ti6Al4V/DP600 joints produced without the use of an interlayer is brittle fracture. The microstructure of the resulting joint consisted mainly of the intermetallic phases FeTi and Fe2Ti. The microstructure of the Ti6Al4V/Au/DP600 joint contained the intermetallic phases Ti3Au, TiAu, and TiAu4. The intermetallic phases TiCu and FeCu were found in the microstructure of the Ti6Al4V/Cu/DP600 joint. The maximum tensile/shear stress was 109.46 MPa, which is more than three times higher than for a welded joint fabricated without the use of Cu or Au interlayers. It has been observed that some alloying elements, such as Fe, can lower the martensitic transformation temperature, and some, such as Au, can increase the martensitic transformation temperature.

Sensitivity enhancement of hydrogen-gas sensor by sub nm Au on Pd surface of a wireless quartz resonator

Hydrogen (H2) is an important source of next-generation energy production. The various H2 sensors developed to date cannot easily detect very low concentrations of H2 (<10 ppm) at room temperature within 100 s. In this study, we develop H2 sensors by depositing a 200 nm thick palladium (Pd) film on AT-cut quartz resonators and adding a sub nm gold (Au) layer on the Pd surface. Moderate Au deposition on the Pd surface improves the sensitivity of the sensor by decreasing the activation energy of atomic-hydrogen migration from the surface to the subsurface. The optimal Au thickness that minimizes the activation energy is 0.5 nm. Finally, we show that the approximate detection limit at room temperature is 5 ppm.

Enhancing performance of Au-hyperdoped Si photodetectors for infrared detection

Hyperdoping Si with transition metals to form intermediate bands for infrared absorption has attracted attention recently for producing sub-bandgap photoconductivity. In particular, Si hyperdoped with Au has been demonstrated to exhibit optoelectronic response at 1550 nm. However, the reported external quantum efficiencies (EQEs) are low, and the device fabrication processes had not been optimized. In this paper, we demonstrate a significant improvement in sub-bandgap EQE through modification of the material and device fabrication processes. By increasing the Si:Au layer thickness, modification of device design, and formation of Ohmic contacts, the EQE was measured to be as high as 0.44% at 1550 nm, nearly two orders of magnitude higher than previous reports from similar devices. Additionally, the EQE was measured to be in the 10-3 range for wavelengths as long as 2.4 μm. The EQE spectrum showed features that were attributed to defect levels from a substitutional Au acceptor defect. The above bandgap EQE showed gain in one device. Thermal annealing at 300 °C does not improve the efficiency of Si:Au photodiodes. These results demonstrate the viability of Au-hyperdoped Si for infrared detection below the bandgap of Si.

Sample preparation using plasma jet treatment for total reflection X-ray fluorescence analysis

Total reflection X-ray fluorescence (TXRF) is widely used for trace element analysis. This method is advantageous because of its simple sample preparation. However, the sample must be placed within the analytical volume (region and height). In this study, the analytical volume was experimentally evaluated and visualized using thin, localized Au layers. The intensity distributions of the Au Lβ lines and background Au Lβ peaks were visualized. Images of the intensity ratio of the Au Lβ line and the background peak were drawn and analyzed to determine the analysis region on the glass substrate depending on the glancing angle. A glancing angle of 0.025° was optimal for TXRF analysis, resulting in a large signal-to-background (SB) ratio. Glancing angles of 0.05° and 0.075° were also effective for obtaining large SB ratios for a relatively large area (>4 mm2). To reduce the thickness of the dried residue and the self-absorption of the XRF emitted from the residue, a glass substrate was subjected to He plasma jet treatment. X-ray photoelectron spectroscopy confirmed that the carbon contamination was reduced from the surface of the glass by the plasma jet treatment, thereby modifying the chemical properties to confer hydrophilicity to the glass surface. The time variation of the C1 s peak intensity suggests that the hydrophilic property was maintained for several hours. The plasma-treated glass was effective in obtaining a thin layer-like residue from a white wine sample. The TXRF results indicated improved recovery and RSD, particularly for low-Z elements, because the absorption effect was reduced in the thin layer-like residue.

Formation of Supernarrow Borophene Nanoribbons

AbstractBorophenes have sparked considerable interest owing to their fascinating physical characteristics and diverse polymorphism. However, borophene nanoribbons (BNRs) with widths less than 2 nm have not been achieved. Herein, we report the experimental realization of supernarrow BNRs. Combining scanning tunneling microscopy imaging with density functional theory modeling and ab initio molecular dynamics simulations, we demonstrate that, under the applied growth conditions, boron atoms can penetrate the outermost layer of Au(111) and form BNRs composed of a pair of zigzag (2,2) boron rows. The BNRs have a width self‐contained to ∼1 nm and dipoles at the edges to keep them separated. They are embedded in the outermost Au layer and shielded on top by the evacuated Au atoms, free of the need for post‐passivation. Scanning tunneling spectroscopy reveals distinct edge states, primarily attributed to the localized spin at the BNRs’ zigzag edges. This work adds a new member to the boron material family and introduces a new physical feature to borophenes.

Formation of Supernarrow Borophene Nanoribbons.

Borophenes have sparked considerable interest owing to their fascinating physical characteristics and diverse polymorphism. However, borophene nanoribbons (BNRs) with widths less than 2 nm have not been achieved. Herein, we report the experimental realization of supernarrow BNRs. Combining scanning tunneling microscopy imaging with density functional theory modeling and ab initio molecular dynamics simulations, we demonstrate that, under the applied growth conditions, boron atoms can penetrate the outermost layer of Au(111) and form BNRs composed of a pair of zigzag (2,2) boron rows. The BNRs have a width self-contained to ∼1 nm and dipoles at the edges to keep them separated. They are embedded in the outermost Au layer and shielded on top by the evacuated Au atoms, free of the need for post-passivation. Scanning tunneling spectroscopy reveals distinct edge states, primarily attributed to the localized spin at the BNRs' zigzag edges. This work adds a new member to the boron material family and introduces a new physical feature to borophenes.

Solid-phase transient soldering method based on Au/Ni–W multilayer thin-film-modified copper-based structures

The copper crystal cone-shaped micro-nanostructure is used as the substrate, and the Ni–W alloy layer and Au nanolayer are plated sequentially. Instantaneous soldering with lead-free solder is realized under ultrasonic assistance at room temperature. This solves the residual stress and thermal damage caused by high melting point lead-free solder on thin chips and thermal components, and ensures the safety and reliability of electronic components. Copper-based microstructures are deposited by electrochemical methods. An amorphous Ni–W alloy layer with a thickness of 180 nm is deposited on the Cu-based microstructures by adjusting the atomic ratio of the plating solution. The Ni–W layer is further coated with a 50 nm Au layer to prevent oxidation. Solid-phase transient soldering is realized by combining the Au/Ni–W multilayer thin-film-modified Cu substructures with commercial solder (SAC305) for a holding time of 3 s at a soldering pressure of 10,000 gf (20 MPa) while ultrasonically assisted. The soldered samples are aged at 180 °C for 10 min, 30 min, and 60 min, respectively. Copper substructures with different surface modifications are subjected to destructive shear experiments with solder balls. Scanning electron microscope and X-ray fluorescence thickness gauge are used to study the microstructure, intermetallic compound (IMC) composition thickness and properties of the soldered interface and section. The cone height of the Cu-based structure is 2–4 μm, and the diameter of the bottom is 800 nm–1200 nm, which has a sharp tip and an excellent L/D ratio. The interface between the Au/Ni–W modified Cu substructure and the solder ball is almost free of holes. The average shear strength at the soldering interface is about 43.06 MPa. The fracture surface after the shear experiment basically occurs inside the solder ball matrix, which belongs to the pure toughness fracture. The interface between the Au/Ni–W-modified Cu-based structure and the solder ball is subjected to long aging treatment at 180 °C. The soldering interface showed a “bright layer”. New phases are generated on the solder side above the “bright layer”, while no new phases appear on the Cu substructure side below the “bright layer”. The copper-based microstructure is inserted into the inside of the solder ball to form an inlay and produce mechanical interlocking. Au/Ni–W alloy modification layer can effectively improve the surface hardness of copper-based structures. This creates a large hardness difference with soft solder and enables the formation of fewer holes in the insertion solder. Amorphous Ni–W alloys are prone to form dense oxide films during ultrasonication. The Au film modification prevents oxide generation and increases the average shear strength of the soldering interface. The Ni–W alloy layer retards the interdiffusion between Cu–Sn, blocks the excessive growth of Cu–Sn IMCs, and reduces the reliability problems caused by interface failure.

Effect of Mo and W underlayers on ordered phase formation in Fe-Au-Pd multilayer thin films at low temperatures

Fe-Pd based thin films with Au intermediate layer fabricated on different substrates (SiO2, SiO2/Mo, SiO2/W) were investigated at annealing temperatures up to 460°C. The samples were deposited by magnetron sputtering and were post-annealed in vacuum. The ongoing processes were investigated by chemical depth profiling and X-ray diffraction. The experimental results showed that the intermediate Au layer always promoted the formation of FePd3 phase which also showed L12 ordered structure except in one case with W underlayer. However, in the samples with Mo buffer but without the Au interlayer the FePd phase formed and L10 ordered phase also appeared for one stacking order. Considering the low diffusivity arising from the annealing temperature the processes were explained by grain boundary diffusion induced reaction layer formation. The formation of the ordered FePd phases was interpreted by the stress accumulation due to the different diffusivity of the components, which relaxes by the shift of the grain boundaries and the transformation of swept over regions. It was concluded, that the effect of the Au interlayer is dominant over the effect of the Mo or W buffer layers.

Four-band terahertz perfect-absorption and high-sensitivity sensor based on tunable Dirac semimetal

In this paper, we designed a dynamically tunable four-band perfect sensor based on bulk Dirac semimetal (BDS). The sensor comprises a top BDS layer, a bottom Au layer, and an intermediate dielectric layer. Four resonant modes with >98 % absorption are achieved in the range of 9–11.8 THz. Due to the rotationally symmetric design, the sensor is polarization insensitive. The formation mechanism of perfect absorption is explained using the principles of impedance matching. We also determined the effects of structural parameters and Fermi energy of the BDS on the absorption spectra. We explain the blue-shift and red-shift phenomena of the resonant frequency based on equivalent circuits. Additionally, we define the refractive index sensitivity (S) and find that the maximum sensitivity is 516 GHz/RIU. Due to these excellent properties, our design provides a way of thinking about actively tunable terahertz sensors and expands their application scope.

Hybrid Plasmonic Waveguides with Tunable ENZ Phenomenon Supported by 3D Dirac Semimetals

AbstractBy depositing a dielectric fiber on top of 3D Dirac semi‐metal (DSM) and Au layers, the tunable propagation properties of hybrid modes are systematically investigated in the mid‐infrared regime, including the effects of the temperatures, the Fermi levels, and rotation angles. Interestingly, due to the importance of inter‐band transition in the mid‐infrared spectral regime, a strong temperature related epsilon‐near‐zero (ENZ) phenomenon has manifested near the transition frequency. Namely, below room temperature, the real part of the effective refractive index (propagation length) shows a peak (valley). Particularly, at 77 K, the according abruption ratio (ratio of maximum to minimum in ENZ region) is 9.71 (204.1). Additionally, the propagation properties are also closely associated with the Fermi level. When the Fermi level varies in the range of 0.08–0.15 eV, the peak position of the real part of the effective refractive index shifts blue from 21.3 to 38.2 THz, and the according abruption ratio of the propagation length can be modulated in the range of 3.81–45.3. These results are very useful for designing tunable plasmonic devices, such as cutting‐edge modulator, filter, and resonators.

Improved Surface-Enhanced Raman Scattering Performance of 2D Ti3C2Tx MXene Embedded in PVDF Film Enabled by Photoinduction and Electric Field Modulation.

In this study, we introduce a synergistic approach to enhance the surface-enhanced Raman scattering (SERS) signal in two-dimensional (2D) MXene through photo-irradiation and electric field modulation. Our methodology involves the integration of 2D Ti3C2Tx MXene with piezoelectric polyvinylidene fluoride (PVDF) polymer, resulting in the creation of a free-standing, flexible composite film. On this composite film, a thin layer of Au was deposited. Our flexible substrate was able to sense methylene blue (MB), crystal violet (CV), 4-aminothiophenol (ATP), and melamine. The SERS substrate exhibits low detection limit of 10-8 M MB with a 6.7 × 106 enhancement factor (EF). The SERS substrate enables picomolar (pM) detection sensitivity for CV molecules with an EF of 9.2 × 109. Furthermore, the introduction of photo-irradiation leads to an additional ∼3.5-fold enhancement in the SERS signal, which is attributed to the altered work function and defects. The application of mechanical force to the piezoelectric PVDF/Ti3C2Tx film results in a ∼4.5-fold boost in SERS signal due to mechanical force-induced electrical energy. The fabrication strategy employed here for producing a flexible piezoelectric PVDF/Ti3C2Tx film holds significant promise for expanding the potential application of 2D MXene in rapid, on-site sensing scenarios.