Antiferromagnetic Layer Research Articles

Effects of filling, strain, and electric field on the Néel vector in antiferromagnetic CrSb

CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high N\'{e}el temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of N\'{e}el vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined and analysed using density functional theory. The MAE of the bulk crystal is large (1.2 meV per unit cell). Due to the significant ionic nature of the Cr-Sb bond, finite slabs are strongly affected by end termination. Truncation of the bulk crystal to a thin film with one surface terminated with Cr and the other surface terminated with Sb breaks inversion symmetry, creates a large charge dipole and average electric field across the film, and breaks spin degeneracy, such that the thin film becomes a ferrimagnet. The MAE is reduced such that its sign can be switched with realistic strain, and the large SOC gives rise to an intrinsic voltage controlled magnetic anisotropy (VCMA). A slab terminated on both faces with Cr remains a compensated AFM, but with the compensation occurring nonlocally between mirror symmetric Cr pairs. In-plane alignment of the moments is preferred, the magnitude of the MAE remains large, similar to that of the bulk, and it is relatively insensitive to filling.

Probe of antiferromagnetic transition via thermal-excited incoherent spin current

Spin Seebeck effect (SSE) for an yttrium iron garnet (YIG)/nickel oxide (NiO)/platinum (Pt) trilayer device was studied in a wide temperature range. It is found that the SSE signal is nonmonotonic in the temperature domain and shows a maximum around the Néel temperature of the NiO layer, which is similar to the temperature dependence of the spin pumping signal in the same device. This result identified that the thermal-excited incoherent spin currents are also sensitive to the fluctuation of an antiferromagnetic system and can be used to probe the antiferromagnetic phase transition. Furthermore, the antiferromagnetic NiO layer is considered to be valuable for the optimization of spin transport efficiency at YIG/Pt interface, which enhances the SSE signal around room temperature.

Accelerating the laser-induced demagnetization of a ferromagnetic film by antiferromagnetic order in an adjacent layer

We study the ultrafast demagnetization of Ni/NiMn and Co/NiMn ferromagnetic/antiferromagnetic bilayer systems after excitation by a laser pulse. We probe the ferromagnetic order of Ni and Co using magnetic circular dichroism in time-resolved pump--probe resonant X-ray reflectivity. Tuning the sample temperature across the antiferromagnetic ordering temperature of the NiMn layer allows to investigate effects induced by the magnetic order of the latter. The presence of antiferromagnetic order in NiMn speeds up the demagnetization of the ferromagnetic layer, which is attributed to bidirectional laser-induced superdiffusive spin currents between the ferromagnetic and the antiferromagnetic layer.

Determining the AC susceptibility of thin metal films using the anisotropic magnetoresistance

The differential ac magnetic susceptibility of thin magnetic films was determined using the anisotropic magnetoresistance (AMR) to measure the response of the magnetization to an applied AC magnetic field. The differential AMR was measured with a small AC magnetic field (1 Oe) at frequencies from 5 Hz to 5000 Hz as a function of the magnitude of an applied DC field that was varied from −60 Oe to +60 Oe. A model relating the magnitude of the differential AMR to the differential AC susceptibility was developed. The ferromagnetic films investigated were permalloy, cobalt, nickel, and nickel with an antiferromagnetic nickel oxide layer on one surface. For all the samples investigated, the differential susceptibility magnitude was a function of the DC field magnitude and was frequency dependent, decreasing with increasing frequency.

Unidirectional Magnetic Anisotropy in Dense Vertically-Standing Arrays of Passivated Nickel Nanotubes.

We report the facile and low-cost preparation as well as detailed characterization of dense arrays of passivated ferromagnetic nickel (Ni) nanotubes (NTs) vertically-supported onto solid Au-coated Si substrates. The proposed fabrication method relies on electrochemical synthesis within the nanopores of a supported anodic aluminum oxide (AAO) template and allows for fine tuning of the NTs ferromagnetic walls just by changing the cathodic reduction potential during the nanostructures’ electrochemical growth. Subsequently, the experimental platform allowed further passivation of the Ni NTs with the formation of ultra-thin antiferromagnetic layers of nickel oxide (NiO). Using adequately adapted magnetic measurements, we afterwards demonstrated that the thickness of the NT walls and of the thin antiferromagneticNiO layer, strongly influences the magnetic behavior of the dense array of exchange-coupled Ni/NiO NTs. The specific magnetic properties of these hybrid ferromagnetic/antiferromagnetic nanosystems were then correlated with the morpho-structural and geometrical parameters of the NTs, as well as ultimately strengthened by additionally-implemented micromagnetic simulations. The effect of the unidirectional anisotropy strongly amplified by the cylindrical geometry of the ferromagnetic/antiferromagnetic interfaces has been investigated with the magnetic field applied both parallel and perpendicular to the NTs axis.

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque

The electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin–orbit torques generated in an adjacent heavy-metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin–orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena. The magnetization and exchange bias field in an IrMn/CoFeB bilayer can be independently switched using a current-controlled spin–orbit torque generated in the antiferromagnetic IrMn layer.

Temperature-Driven Pinned Layer Magnetization Reversal in Exchange Biased Fe₃O₄/Alq₃/Co/CoO Hybrid Spin Valve

In this article, we provide an initial qualitative description of the basic magnetization reversal processes behind temperature and cooling field-dependent exchange bias effect at Co/CoO interface of Fe3O4/Alq3/Co/CoO/Au hybrid spin valve (SV) device structure. The exchange field at Co/CoO interface is observed to be inversely proportional to temperature, indicating enhanced magnetic field sensitivity of Co reverse domain nucleation at the high-temperature region. The exchange field, at constant temperature, is found to be insensitive to change in the cooling field, which may be due to efficient ferromagnetic coupling at the Co/CoO interface of the device. Sudden decrease of exchange field with training cycle number ( $n$ ) has been observed at lower values of $n$ , which may be attributed to rearrangement of Co pinned layer spin configuration toward equilibrium. Interestingly, incorporation of antiferromagnetic CoO layer has not been observed to bring any change in magnetoresistance (MR) behavior of the exchange biased SV device, which shows a two-step switching pattern of MR at 100 K.

Theory of inversion- Z4 protected topological chiral hinge states and its applications to layered antiferromagnets

We study positions of chiral hinge states in higher-order topological insulators (HOTIs) with inversion symmetry. First, we exhaust all possible configurations of the hinge states in the HOTIs in all type-I magnetic space groups with inversion symmetry by studying dependence of the sign of the surface Dirac mass on surface orientations. In particular, in the presence of glide symmetry, for particular surface orientations, the surface Dirac mass changes sign by changing the surface terminations. By applying this result to a layered antiferromagnet (AFM), we find a difference in the hinge states between the cases with an even and odd number of layers. In the case of an even number of layers, which does not preserve inversion symmetry, positions of hinge states are not inversion symmetric. Nonetheless, these inversion-asymmetric hinge states result from the bulk topology. We show that their inversion-asymmetric configurations are uniquely determined from the symmetries and the topological invariant.

Insulator-to-conductor transition driven by the Rashba\u2013Zeeman effect

The Rashba effect has recently attracted great attention owing to emerging physical properties associated with it. The interplay between the Rashba effect and the Zeeman effect, being produced by the exchange field, is expected to broaden the range of these properties and even result in novel phenomena. Here we predict an insulator-to-conductor transition driven by the Rashba–Zeeman effect. We first illustrate this effect using a general Hamiltonian model and show that the insulator-to-conductor transition can be triggered under certain Rashba and exchange-field strengths. Then, we exemplify this phenomenon by considering an Ag2Te/Cr2O3 heterostructure, where the electronic structure of the Ag2Te monolayer is affected across the interface by the proximity effect of the Cr2O3 antiferromagnetic layer with well-defined surface magnetization. Based on first-principles calculations, we predict that such a system can be driven into either insulating or conducting phase, depending on the surface magnetization orientation of the Cr2O3 layer. Our results enrich the Rashba–Zeeman physics and provide useful guidelines for the realization of the insulator-to-conductor transition, which may be interesting for experimental verification.

A Decrease in the Exchange Bias Caused by an Increase in the Effective Thickness of the Copper Layer in the NiFe/Cu/IrMn Heterostructures

In a series of NiFe/Cu/IrMn structures with a variable effective thickness of the nonmagnetic copper interlayer (up to its absence in the NiFe/IrMn sample), we observed a decrease in the exchange bias and coercive force with an increase in the effective thickness of the copper layer. The coalescence of copper islands when the effective thickness of the copper layer reaches 1 nm changes the contact exchange interaction between the ferromagnet and antiferromagnet in NiFe–IrMn to indirect exchange interaction through the conduction electrons of the copper layer in NiFe–Cu–IrMn. The structural quality of single-crystal ferromagnetic and antiferromagnetic layers does not change, and the magnetization reversal occurs without the participation of domains in the temperature range of 2–300 K. Simulation of the deposition dynamics demonstrates the island structure of the film at the initial stages up to an effective thickness of 1 nm.

Walker-like domain wall breakdown in layered antiferromagnets driven by staggered spin\u2013orbit fields

Within linear continuum theory, no magnetic texture can propagate faster than the maximum group velocity of the spin waves. Here, by atomistic spin dynamics simulations and supported by analytical theory, we report that a strongly non-linear transient regime due to the appearance of additional magnetic textures results in the breaking of the Lorentz translational invariance. This dynamical regime is akin to domain wall Walker-breakdown in ferromagnets and involves the nucleation of an antiferromagnetic domain wall pair. While one of the nucleated domain walls is accelerated beyond the magnonic limit, the remaining pair remains static. Under large spin–orbit fields, a cascade of multiple generation and recombination of domain walls are obtained. This result may clarify recent experiments on current pulse induced shattering of large domain structures into small fragmented domains and the subsequent slow recreation of large-scale domains.

Tunable magnetism in layered CoPS3 by pressure and carrier doping

Despite extensive research on recently discovered layered ferromagnetic (FM) materials, their further development is hampered by the limited number of candidate materials with desired properties. As a much bigger family, layered antiferromagnetic (AFM) materials represent excellent platforms to not only deepen our understanding of fundamental physics but also push forward high-performance spintronics applications. Here, by systematic first-principles calculations, we demonstrate pressure and carrier doping control of magnetic properties in layered AFM CoPS3, a representative of transition metal phosphorus trichalcogenides. In particular, pressure can drive isostructural Mott transition, in sharp contrast to other transition metal thiophosphates. Intriguingly, both pressure and carrier doping can realize the long-sought FM half-metallic states with 100% spin polarization percentage, which is good for improving the injection and detection efficiency of spin currents among others. Moreover, the Mott transition is accompanied by instantaneous spin-crossover (SCO) in CoPS3, and such cooperative SCO facilitates the implementation of fast-response reversible devices, such as data storage devices, optical displays and sensors. We further provide an in-depth analysis for the mechanisms of FM half-metallicity and SCO. Tunable magnetism in layered AFM materials opens vast opportunities for purposeful device design with various functionalities.

Interrelation between polycrystalline structure and time-dependent magnetic anisotropies in exchange-biased bilayers

For polycrystalline exchange-biased thin films the macroscopic magnetic properties evolve from a complex interplay of different individual magnetic anisotropies which are directly connected to the grain volume distribution and to the crystal and interface structure of the layer system. A quantitative comparison of models describing a macroscopically observed exchange bias by the contributing anisotropies has in most cases been hampered by neglecting their time dependence with respect to data acquisition and storage times. Using a recently developed model we are able to connect time-dependent parts of the prevailing anisotropies with parameters describing the polycrystalline structure of the layer system. The model will be compared to experiments on a prototypical IrMn/CoFe bilayer, where structural and magnetic parameters have been systematically altered by varying the deposition rate of the antiferromagnetic layer and the field-cooling temperature. The combination of angular-resolved measurements obtained by vectorial magneto-optic Kerr magnetometry and a systematic analysis of the polycrystalline structure enables the disentanglement of the different anisotropy contributions to the macroscopic exchange bias and coercive fields and serves as a verification of the utilized model.

Spontaneous positive exchange bias effect in SrFeO3−x/SrCoO3−x epitaxial bilayer

A novel phenomenon of spontaneous positive exchange bias (PEB) is reported in SrFeO3−x/SrCoO3−x epitaxial bilayer without undergoing any magnetic field treatment. When inserting a thick SrTiO3 (STO) nonmagnetic spacer (about 6 nm) into the bilayer interface, this phenomenon still exists. Based on a series of testing means, the spontaneous PEB effect is supposed to be mainly related to short-range ferromagnetic (FM) exchange coupling at the interface when there is no STO spacer. As the STO interlayer reaches up to a certain thickness, short-range coupling interaction basically disappears. At this time, the long-range dipole field may be responsible for the coupling of the FM and antiferromagnetic (AFM) layer across the nonmagnetic STO and then leads to the same bias effect. Our discoveries provide a new way to realize and manipulate spontaneous exchange bias-based spintronics devices, such as magnetic recording heads and spin valves.

Spin valves as magnetically switchable spintronic THz emitters

In this Letter, we demonstrate that spin valve systems consisting of a magnetically soft free Fe layer and a magnetically hard Fe fixed layer pinned by an antiferromagnetic Ir23Mn77 layer, which are separated by a Pt or W spacer, are efficient switchable spintronic terahertz (THz) emitters. We show that a small external magnetic field on the order of 10 mT is sufficient to switch the magnetization orientation of the free layer and, therefore, to change the relative magnetization orientation of the two Fe layers. This goes along with a change in the THz RMS amplitude by up to more than one order of magnitude and allows fast switching of the emitter from a high to a low THz power state and vice versa.

Coupled spin-charge dynamics in magnetic van der Waals heterostructures

We present a phenomenological theory for coupled spin-charge dynamics in magnetic van der Waals heterostructures. The system studied consists of a layered antiferromagnet inserted into a capacitive vdW heterostructure. It has been recently demonstrated that charge doping in such layered antiferromagnets can modulate the strength, and even the sign, of exchange coupling between the layer magnetizations. This provides a mechanism for electrically generating magnetization dynamics. The central result we predict here is that the magnetization dynamics reciprocally results in inducing charge dynamics. Such dynamics makes magnetic van der Waals heterostructures interesting candidates for spintronics applications. To this end, we also show that these systems can be used to convert sub-THz radiation induced magnetization dynamics into electrical signals.

Nonmagnetic Layer Thickness Dependence of Exchange Bias and Coercive Fields in NiFe/NM/FeMn (NM = Cu, Ru) Trilayers with Long-Range Exchange Bias Effect

Trilayer films consisting of ferromagnetic NiFe, nonmagnetic Cu or Ru, and antiferromagnetic FeMn layers were prepared by sputtering technique. The long-range exchange bias properties were investig...

Enhanced positive and negative exchange bias in FeF2/Ni with dusted interfaces

An enhanced exchange bias was found in FeF2/Ni interfaces by inserting dusting of Pd and Cu atoms. We have used an ultrathin wedge to investigate systematically the effect of a discontinuous nonmagnetic spacer between the antiferromagnetic and ferromagnetic layers. Negative and positive exchange biases are symmetric and maximized for less than two angstroms of the nonmagnetic layer. Moreover, the dusting reduces the field cooling threshold to switch between the negative and the positive exchange bias. This finding demonstrates that nonmagnetic dusted layers can improve the interfacial exchange energy density in antiferromagnetic/ferromagnetic heterostructures and modify the bulk antiferromagnetic domain structure. Other dusting materials such as Ag, Ti, V, and SiO2 showed no enhancement in FeF2/Ni bilayers, which indicates the atomic sensitivity of this effect.

Extremely well isolated two-dimensional spin- 12 antiferromagnetic Heisenberg layers with a small exchange coupling in the molecular-based magnet CuPOF

We report on a comprehensive characterization of the newly synthesized Cu$^{2+}$-based molecular magnet [Cu(pz)$_2$(2-HOpy)$_2$](PF$_6$)$_2$ (CuPOF), where pz = C$_4$H$_4$N$_2$ and 2-HOpy = C$_5$H$_4$NHO. From a comparison of theoretical modeling to results of bulk magnetometry, specific heat, $\mu^+$SR, ESR, and NMR spectroscopy, this material is determined as an excellent realization of the 2D square-lattice $S=1/2$ antiferromagnetic Heisenberg model with a moderate intraplane nearest-neighbor exchange coupling of $J/k_\mathrm{B} = 6.80(5)$ K, and an extremely small interlayer interaction of about 1 mK. At zero field, the bulk magnetometry reveals a temperature-driven crossover of spin correlations from isotropic to $XY$ type, caused by the presence of a weak intrinsic easy-plane anisotropy. A transition to long-range order, driven by the low-temperature $XY$ anisotropy under the influence of the interlayer coupling, occurs at $T_\mathrm{N} = 1.38(2)$ K, as revealed by $\mu^+$SR. In applied magnetic fields, our $^1$H-NMR data reveal a strong increase of the magnetic anisotropy, manifested by a pronounced enhancement of the transition temperature to commensurate long-range order at $T_\mathrm{N} =2.8$ K and 7 T.

Asymmetric magnetization reversal of the Heusler alloy Co2FeSi as free layer in an CoFeB/MgO/Co2FeSi magnetic tunnel junction

We report the in-plane magnetization reversal behavior of the Co2FeSi Heusler alloy free layer in a bottom-pinned magnetic tunnel junction film with 149% TMR. Using magneto-optic indicator film imaging, we visualize the magnetic domain dynamics of this buried layer integrated within a full magnetic tunnel junction stack. The magnetic domain dynamics reveal anisotropic magnetization reversal within Co2FeSi under applied in-plane magnetic fields. While the reversal behavior under in-plane fields applied perpendicular to the in-plane exchange bias direction indicates smooth, coherent rotation away from the easy axis, asymmetric magnetic reversal behavior is observed along the easy axis. Reversed domains propagate from the interior of the film laterally outward toward the edges as the free layer magnetization switches into parallel alignment with the pinned synthetic antiferromagnetic reference layer (IrMn/CoFe/Ru/CoFeB). On the other hand, domains propagate from the film edges inward for the free layer transition into antiparallel alignment with the reference layer. These results have important implications for Heusler magnetic tunnel junction device performance.