Lattice Thermal Conductivity Research Articles

Thermoelectric Characteristics of Bulk Cr2Te3 with Low Lattice Thermal Conductivity

Thermoelectric Characteristics of Bulk Cr2Te3 with Low Lattice Thermal Conductivity

Tailoring the Lattice Thermal Conductivity of Al‐Incorporated Ag2Se for Near Room Temperature Waste Heat Recovery

AbstractAg2Se is categorized as a typical ′phonon‐liquid‐electron‐crystal (PLEC)′material, exhibiting an extremely low . In this study, Al substituted Ag2Se samples were synthesized by mechanical alloying process followed by hot press densification technique. The Al substituted sample shows an exceptionally high mobility of 2360 cm2 V−1 S−1 at room temperature and a maximum power factor of 1442 μWm−1 K−2 at 383 K. The phonon scattering induced by various crystal imperfections due to Al substitution helped to obtain a very low lattice thermal conductivity value of 0.3 W/mK. A high figure of merit (zT) of 0.4 at 383 K was obtained as a result of the simultaneous effect of boosting the electrical transport properties and decreasing the thermal conductivity. This present work summarizes that the Al substitution is highly significant in improving the thermoelectric properties of Ag2Se.

Vibronics of multi-material nanopillared membranes and impact on the thermal conductivity

Atomic motion in nanopillars standing on the surface of a silicon membrane generates vibrons, which are wavenumber-independent phonons that act as local resonances. These vibrons couple with the vast majority of the phonon population, including heat-carrying phonons, traveling along the base membrane causing a reduction in the in-plane lattice thermal conductivity. In this work, we examine isolated silicon and gallium nitride nanopillars and for each compare the vibrons density of states (DOS) to those of phonons in an isolated version of the silicon membrane. We show that while the conformity of the phonon-vibron DOS distribution between the two components across the full spectrum is a key factor in reducing the thermal conductivity of the assembled nanostructure, the presence of an intense vibron population at more dominant low frequencies plays a competing role. We report predictions from molecular dynamics simulations showing lower thermal conductivities for a silicon membrane with gallium-nitride nanopillars compared to a silicon membrane with silicon nanopillars.

Rational composition engineering toward high thermoelectric performance in p-type EuMg2Sb2-based materials

Mg-based compounds are emerging materials for efficient thermoelectric conversion, as exemplified by n-type Mg3Sb2-based materials, while a high performing p-type Mg3Sb2 material is lacking. EuMg2Sb2, a derivative of Mg3Sb2, has revealed potential as a high-performance alternative to p-type Mg3Sb2-based materials, while pristine EuMg2Sb2 suffers from low carrier concentration. Herein, we reveal that both Zn substitution for Mg and Yb substitution for Eu not only boost the carrier concentration and mobility of p-type EuMg2Sb2-based materials, but also sharply diminish the lattice thermal conductivity via enhancing phonon scattering. Band structure calculation shows that Zn substitution minimizes the energy difference between different bands at the valence band maximum and reduces the band effective mass, leading to optimized band structure. Combined with the role of Ag doping in increasing the carrier concentration and power factor, p-type Eu0.5Yb0.5Mg1.0975Zn0.9975Ag0.005Sb2 sample obtains a maximal dimensionless figure of merit (zT) value of 1.18 at 823 K, which compares favorably to those of EuMg2Sb2 and other p-type Mg–Sb-based Zintl materials. This study demonstrates the efficacy and importance of delicate composition engineering in boosting the thermoelectric performance of p-type EuMg2Sb2.

A DFT Computational Study of Type-I Clathrates A8Sn46-x (A = Cs or NH4, x = 0 or 2).

Semiconducting clathrates have attracted considerable interest in the field of thermoelectric materials. We report here a computational study on the crystal structure, the enthalpy of formation, and the physical properties of the following type-I clathrates: (a) experimentally studied Cs8Sn44 and hypothetical Cs8Sn46 and (b) hypothetical (NH4)8Sn46-x (x = 0 or 2). The ab initio VASP calculations for the nominal stoichiometries include the geometry optimization of the initial structural models, enthalpies of formation, and the electronic and phonon density of states. Comparison of the chemical bonding of the structural models is performed via the electron localization function. The results show that the presence and distribution of defects in the Sn framework for both Cs8Sn46-x and (NH4)8Sn46-x systems significantly alters the formation energy and its electrical properties, ranging from metallic to semiconducting behavior. In particular, one defect per six-membered Sn ring in a 3D spiro-network is the thermodynamically preferred configuration that results in the Cs8Sn44 and (NH4)8Sn44 stoichiometries with narrow-band gap semiconducting behavior. Moreover, the rotation of the ammonium cation in the polyhedral cavities is an interesting feature that may promote the use of ammonium or other small molecular cations as guests in clathrates for thermoelectric applications; this is due to the decrease in the lattice thermal conductivity.

Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide

AbstractPristine tin selenide (SnSe) and copper (Cu) doped SnSe single crystals are grown by direct vapour transport technique. The energy dispersive X‐ray, X‐ray diffraction and Raman spectroscopic analysis of grown crystals show preferred stoichiometry having a single phase othorhombic SnSe. The electrical conductivity of SnSe and Cu doped SnSe are 24.24 and 106.06 S m−1 at 310 K respectively which increase as temperature increases. Carrier concentration of grown single crystals are evaluated by the Hall effect. Lattice thermal conductivity of pristine SnSe is 0.61 W mK−1, that decreased by copper doping to 0.44 W mK−1 at 310 K and for both the crystals it shows decrement as temperature increases to 483 K. Seebeck coefficient of the grown SnSe and Cu doped SnSe are positive and obtained values are 536.44 and 492.90 µV K−1 respectively at 310 K that confirm the p‐type semiconducting nature. Power factor, Figure of merit and thermoelectric compatibility factor of grown pristine SnSe is 0.25 × 108 µV mK−2, 0.005 and 0.02 Volt−1 respectively and shows improvement in Cu doped SnSe, i.e., 0.08 × 108 µV mK−2, 0.017 and 0.07 Volt−1 respectively at 310 K. This shows Cu doping in SnSe makes it an effective thermoelectric device contender.

Ultralow Lattice Thermal Conductivity and Large Glass-Like Contribution in Cs3Bi2I6Cl3: Rattling Atoms and p-Band Electrons Driven Dynamic Rotation.

Understanding the origin of ultralow lattice thermal conductivity κL of halide perovskites is of great significance in the energy conversion field. The soft phonon modes and the large anharmonicity corresponding to the dynamic rotation of halogen atoms play an important role in limiting the thermal transport of halide perovskites. The dynamic rotation has long been thought to originate from the electrostatic repulsion of lone pairs around halogen atoms. Here, by studying the layered perovskite Cs3Bi2I6Cl3, it is found that the interaction between the lone pairs contributed by the s bands of halogen atoms is short-range, and the dynamic rotation is really driven by the occupied p-band electrons. It dominates Cs3Bi2I6Cl3 with ultralow κL, < 0.2 W mK-1 at 300 K. Moreover, soft optical phonons are presented ≈1 and 2.2 THz that constitute relatively flat and dense bands due to the rattling Cs and Cl atoms, contributing a large glass-like component to the κL. The results have important implications for understanding the origin of the ultralow κL in halide perovskites and for designing novel perovskites to serve the energy conversionfield.

Study of electronic, mechanical, optical, and thermoelectric properties of stable double perovskites Cs2K(Ga/In)I6 for solar cells renewable energy

Double perovskites are exceptional materials for thermoelectric and optoelectronic applications in pursuing green energy. In this study, a comprehensive analysis of Cs2K(Ga/In)I6 has been conducted, focusing on its mechanical, electronic, optical, and thermoelectric properties by using wien2k, BoltzTraP, ShengBTE, and Phonopy codes. The stability of these compounds has been ensured by considering the tolerance factor, formation energy, phonon spectra, and elastic constants. The elastic and thermophysical properties, including ductility, anisotropy, Debye temperature, and melting temperature, are reported to be noteworthy. The band gaps of Cs2K(Ga/In)I6, measured to be 1.92 and 2.08 eV, indicate the presence of absorption bands in both the visible and ultraviolet regions. Significant absorbance, polarization, low optical reflectivity, and energy loss have been discussed in relation to photovoltaic applications. In addition, the transport characteristics are examined by analyzing the Seebeck coefficient and thermal and electrical conductivities. Due to their high figure of merit and exceptionally low lattice thermal conductivity at room temperature, these materials are highly recommended for thermoelectric generators.

Ultralow Lattice Thermal Conductivity of Zintl‐Phase CaAgSb Induced by Interface and Superlattice Scattering

Zintl phases attract extensive attention due to the characteristic of “electron‐crystal, phonon glass”. In this work, an ultralow lattice thermal conductivity ≈0.59 W m−1 K−1 at 300 K and ≈0.3 W m−1 K−1 at 623 K is obtained in CaAgSb Zintl phase, which is much lower than that of other well‐known Zintl compounds. The origin of this ultralow lattice thermal conductivity is explored through first‐principles calculations and Cs‐corrected scanning transmission electron microscopy. Theoretical phonon calculations provide evidence for complex phonon characteristics such as avoided‐crossing effect and low‐frequency flat band that favor the low lattice thermal conductivity. Moreover, subsequent microstructure results reveal abundant structural defects created in the CaAgSb sample, including superlattice structure and interface structure, which further contribute to the ultralow lattice thermal conductivity.

Deciphering Pauling's Third Rule: Uncovering Strong Anharmonicity and Exceptionally Low Thermal Conductivity in TlAgSe for Thermoelectrics.

The elucidation of chemical bonding, coupled with an exploration of the correlated dynamics of constituent atoms, is essential for unravelling the underlying mechanism responsible for low lattice thermal conductivity (κL) exhibited by a crystalline solid, which is essential for thermoelectrics and thermal barrier coatings. In this regard, Pauling's third empirical rule, which deals with the cationic repulsion due to proximity in the face or edge shared polyhedra in a crystal structure, can bring about the lattice instability required to suppress the κL. Here, we demonstrate the presence of such instability in a ternary selenide, TlAgSe, leading to a ultra-low κL of 0.17 W/m.K at 573 K. Our study reveals the instability arising from Ag-Ag repulsion within edge-shared AgSe4 tetrahedra through investigation of the local structure using synchrotron X-ray pair distribution function (PDF) analysis and supported by first-principles density functional theory calculations. We observe correlation between weakening in the Ag and the Tl-sublattice, providing direct experimental evidence of Pauling's third empirical rule. The correlated rattling of Ag and Tl induces a highly anharmonic lattice and low energy optical phonons, resulting in suppressed sound velocity and ultralow κL in TlAgSe. The electronic origin of soft and anharmonic lattice is the presence of filled antibonding states in the valence band near the Fermi level constructed by Ag(4d)-Se(4p) and Tl(6s)-Se(4p) interactions. This work demonstrates that the evidence of dynamic distortion in a crystal lattice is governed by the third empirical rule given by Pauling, which can act as a potential new strategy for diminishing κL in crystalline solids.

Deciphering Pauling's Third Rule: Uncovering Strong Anharmonicity and Exceptionally Low Thermal Conductivity in TlAgSe for Thermoelectrics

AbstractThe elucidation of chemical bonding, coupled with an exploration of the correlated dynamics of constituent atoms, is essential for unravelling the underlying mechanism responsible for low lattice thermal conductivity (κL) exhibited by a crystalline solid, which is essential for thermoelectrics and thermal barrier coatings. In this regard, Pauling's third empirical rule, which deals with the cationic repulsion due to proximity in the face or edge shared polyhedra in a crystal structure, can bring about the lattice instability required to suppress the κL. Here, we demonstrate the presence of such instability in a ternary selenide, TlAgSe, leading to a ultra‐low κL of 0.17 W/m.K at 573 K. Our study reveals the instability arising from Ag−Ag repulsion within edge‐shared AgSe4 tetrahedra through investigation of the local structure using synchrotron X‐ray pair distribution function (PDF) analysis and supported by first‐principles density functional theory calculations. We observe correlation between weakening in the Ag and the Tl‐sublattice, providing direct experimental evidence of Pauling's third empirical rule. The correlated rattling of Ag and Tl induces a highly anharmonic lattice and low energy optical phonons, resulting in suppressed sound velocity and ultralow κL in TlAgSe. The electronic origin of soft and anharmonic lattice is the presence of filled antibonding states in the valence band near the Fermi level constructed by Ag(4d)−Se(4p) and Tl(6s)−Se(4p) interactions. This work demonstrates that the evidence of dynamic distortion in a crystal lattice is governed by the third empirical rule given by Pauling, which can act as a potential new strategy for diminishing κL in crystalline solids.

Optimization of Co4Sb11.5Te0.5 thermoelectric performance through Al filling under high temperature and high pressure

So far, the method of optimizing the thermoelectric properties of skutterudite CoSb3 is usually to achieve a breakthrough in high-properties thermoelectric merit by selecting excellent doping atoms and determining a reasonable percentage of atoms. In this study, we achieved the preparation of small atomic radius Al-filled Co4Sb11.5Te0.5 compounds by high-temperature and high-pressure (HTHP) synthesis methods. The thermoelectric properties of the samples AlxCo4Sb11.5Te0.5 were optimized from two dimensions: synthesis pressures (1.0 GPa, 1.5 GPa, 2.0 GPa) and Al filling concentration (x = 0.1, 0.2, 0.3, 0.5), ultimately achieving effective decoupling of electron-phonon transport properties. The experimental results show that Al doping can optimize the electrical transport properties of materials effectively, rapid synthesis method of HTHP can introduce abundant grain boundaries, diversification of grain sizes, a large number of dislocations and widely distributed nano second phase, etc. These microstructures in bulk materials form a multi-scale phonon scattering network in situ, which can effectively scatter phonons and reduce the lattice thermal conductivity effectively. After optimizing the synthesis pressure and Al filling concentration through orthogonal transformation, the sample Al0.3Co4Sb11.5Te0.5 prepared at a synthesis pressure of 1.5 GPa obtained a minimum lattice thermal conductivity value of 0.88 W m−1 K−1, a maximum power factor of 40.96 μ W cm−1 K−2 and a maximum zT value of 1.18 at 773.15 K.

Insight on thermodynamic and thermoelectric properties of Ge based perovskites AGeO3 (A = Mg, Cd) for energy harvesting applications: A DFT approach

In this manuscript, transport properties like thermoelectric and thermodynamic properties of AGeO3 (A = Mg, Cd) perovskites have been performed in detail along with effect of chemical potential on various thermoelectric parameters. Furthermore, we present the electronic effects and thermodynamic stability of these materials. The MgGeO3 and CdGeO3 alloys have a gap of 3.368 and 2.555 eV, respectively, making them indirect band gap semiconductors. Furthermore, using a constant relaxation time approximation and semiclassical Boltzmann theory, the thermoelectric (TE) properties of both materials have been studied. The lattice thermal conductivity magnitudes for MGeO3 and CdGeO3 are 7.47 W/mK and 21.55 W/mK, respectively, at 300 K. Power Factor (PF) has been measured at approximately 0 chemical potential, or approximately 14 (1011 W/K2 ms) at 1200 K, 7.5 (1011 W/K2 ms) at 700 K, and 3.5 (1011 W/K2 ms) at 300 K for both MgGeO3 and CdGeO3. At room temperature, the electrical conductivities of MgGeO3 and CdGeO3 were measured to be 1.43 × 1015W/mK and 1.08 × 1015W/mK, respectively. Over a broad temperature range (0–1200 K), the thermodynamic parameters, such as heat capacity, entropy, thermal expansion, and Debye temperature, were also computed and discussed.

Controlled Phonon Transport via Chemical Bond Stretching and Defect Engineering: The Case Study of Filled β-Mn-Type Phases.

Controlling the elastic properties of the material could become a powerful tool for tuning the thermal transport in solids. Nevertheless, the impact of the crystal structure, chemical bonding, and elastic properties on the lattice thermal conductivity remains to be elucidated. This is a pivotal issue for the advancement of thermoelectric (TE) materials. In this context, the influence of cation substitution in tetrahedral voids on the structural, thermal, and TE properties of α- and β-PbyGa6-xInxTe10─filled β-Mn-type phases─is reported here. The investigated materials show semiconducting behavior and a change from p- to n-type conductivity, depending on the chemical composition and temperature. Our findings indicate that the electronic transport in β-Mn-type phases is largely influenced by the substantial distortion of the Te framework, which causes the low weighted mobility and strong scattering of charge carriers. The presence of a significant anharmonicity of lattice vibrations results in the ultralow lattice thermal conductivity of PbyGa6-xInxTe10 materials. With increasing x, κL decreases from 0.59 to an extremely low value of 0.36 W m-1 K-1 at 298 K due to the decrease of bonding energy, intensification of anharmonic thermal vibrations of atoms, and formation of point defects. This work demonstrates the efficacy of utilizing the crystal structure and elastic properties to regulate phonon transport in functional materials.

Enhanced High-Temperature Thermoelectric Performance in Te-Doped Electronegative Element-Filled Skutterudites via Suppressing Bipolar Effects and Enhanced Phonon Scattering.

CoSb3-based skutterudites have great potential as midtemperature thermoelectric (TE) materials due to their low cost and excellent electrical and mechanical properties. Their application, however, is limited by the high thermal conductivity and the degradation of TE performance at elevated temperatures, attributed to the adverse effects of bipolar diffusion. Herein, a series of SeyCo4Sb12-xTex compounds were successfully synthesized by combining a solid-state reaction and spark plasma sintering techniques to mitigate these challenges. It was found that doping Te at the Sb sites effectively enhanced the carrier concentration and suppressed the bipolar effect to obtain a superior power factor of ∼43 μW cm-1 K-2. Furthermore, due to the low resonant frequency of Se, filling voids of CoSb3 with Se achieved a low lattice thermal conductivity of 1.55 W m-1 K-1. Nevertheless, Se filling introduced additional holes, reducing the carrier concentration without a significant detriment of the carrier mobility. As a result, a maximum figure of merit of 1.23 was achieved for Se0.1Co4Sb11.55Te0.45 at 773 K. This work provides a valuable guidance for selecting appropriate filling and doping components to achieve synergistic optimization of the acoustics and electronics of CoSb3-based skutterudites.

Janus-like Structure and Resonance Level Actualized Ultralow Lattice Thermal Conductivity and Enhanced ZTave in Mg3(Sb, Bi)2-Based Zintls.

Grain boundary (GB) engineering includes grain size and GB segregation. Grain size has been proven to affect the electrical properties of Mg3(Sb, Bi)2 at low temperatures. However, the formation mechanism of GB segregation and what kind of GB segregation is beneficial to the performance are still unclear. Here, the Ga/Bi cosegregation at GBs and Mg segregation within grains optimize the transport of electrons and phonons simultaneously. Ga/Bi cosegregation promotes the formation of Janus-like structures due to the diverse ordering tendencies of liquid Mg3Sb2 and Mg3Bi2 and the absence of a solid solution of Ga/Bi. The Janus-like structure significantly reduces the room-temperature lattice thermal conductivity by introducing diverse microdefects. Meanwhile, a coherent interface between the nano Mg segregation region and the matrix is formed, which reduces the thermal conductivity without affecting the carrier transport. Furthermore, the band structure calculations show that Ga doping introduces the resonance level, increasing the Seebeck coefficient. Finally, the lattice thermal conductivity reaches ∼0.4 W m-1 K-1, and a high average ZT of 1.21 between 323 and ∼773 K is achieved for Mg3.2Y0.02Ga0.03Sb1.5Bi0.5. This work provides guidance for improving the thermoelectric performance via designing cosegregation.

Enhanced thermoelectric performance of AgCuTe-doped polycrystalline SnSe by lattice plainification

Abstract Polycrystalline SnSe, renowned for its environmental sustainability, holds promise as a significant thermoelectric material, attracting considerable research attention. This study focuses on the thermoelectric properties of p-type polycrystalline SnSe doped with silver copper telluride (AgCuTe). Our experimental results conclusively show that the decomposition products of AgCuTe not only fill Sn vacancies but also act as acceptors, thereby introducing additional hole carriers. This leads to a notable improvement in both carrier mobility and concentration. Importantly, the thermal conductivity of the doped samples remains largely unchanged, as the lattice flattening strategy significantly boosts electrical performance without affecting lattice thermal conductivity. Ultimately, the doped sample Sn0.97Se-0.5%AgCuTe resulted in a power factor of 6.2 mW/mK and a peak ZT value of 1.4 at 798 K, representing a 109% improvement in ZT value. All samples exhibits superior stability and reproducibility, emphasizing its reliability for practical applications.

Unveiling the impact of four-phonon scattering on thermal transport properties of the bulk β-Ga2O3 and monolayer Ga2O3

In recent years, the role of four-phonon (4ph) scattering in thermal transport properties has been gradually revealed. However, the underlying scattering mechanisms of the bulk β-Ga2O3 and monolayer Ga2O3 remain unclear. Hence, we evaluate the effect of 4ph scattering on the thermal transport properties of the bulk β-Ga2O3 and monolayer Ga2O3 by utilizing first-principles calculations. It has been observed that the Young's modulus and lattice thermal conductivity (κ) of the bulk β-Ga2O3 are anisotropic, while the values of the monolayer Ga2O3 are isotropic. The κ of the bulk β-Ga2O3 along the three directions ([100], [010], and [001]) and monolayer Ga2O3 after adding 4ph scattering are decreased by 9.23%, 11.52%, 13.89%, and 29.24% at 300 K, respectively. Moreover, the effect of four-phonon scattering is more pronounced at the high temperature. Afterwards, based on the phonon behaviors, we can prove that the addition of 4ph scattering can increase the phonon scattering rate, decrease the phonon mean free path, and increase the phase space, which results in lower thermal conductivity. The findings can contribute to a better understanding of high-order phonon scattering mechanisms of the Ga2O3 materials.

Excellent thermoelectric performance in alkali metal phosphides M3P (M = Na and K) with phonon-glass electron-crystal like behaviour.

Identifying ideal thermoelectric materials presents a formidable challenge due to the intricate coupling relationship between thermal conductivity and power factor. Here, based on first-principles calculations, along with self-consistent phonon theory and the Boltzmann transport equation, we theoretically investigate the thermoelectric properties of alkali metal phosphides M3P (M = Na and K). The evident 'avoided crossing' phenomenon indicates the phonon glass behavior of M3P (M = Na and K). Due to the strong lattice anharmonicity induced by alkali metal elements, accounting for quartic anharmonic corrections, the lattice thermal conductivities of Na3P and K3P at room temperature are merely 0.25 and 0.12 W m-1 K-1, respectively. Furthermore, the high degeneracy and 'pudding-mold-type' band structure lead to high p-type PF in M3P (M = Na and K). At 300 K, the p-type power factors (PF) of Na3P and K3P can reach 3.90 and 0.80 mW mK-2, respectively. The combination of ultralow κL and high PF leads to excellent thermoelectric figure of merit (ZT) values of 1.70 (3.38) and 1.18 (2.13) for p-type Na3P and K3P under optimal doping concentration at 300 K (500 K), respectively, surpassing traditional thermoelectric materials. These findings demonstrate that M3P (M = Na and K) exhibits behavior similar to phonon-glass electron crystals, thereby indicating a direction for the search for high-performance thermoelectric materials.

Predicting the stability and exploring the fundamental physical properties of tetragonal Gd2O3: A comprehensive first-principles investigation

A burnable absorber is a material used in nuclear reactors to manage reactivity and extend operational cycles by absorbing neutrons. Gadolinium oxide (Gd2O3) is a prevalent burnable absorber employed in nuclear reactors. By utilizing density functional theory (DFT) within a first-principles framework, a comprehensive exploration into the physical characteristics of the predicted tetragonal phase of Gd2O3 has been effectively conducted. The investigation encompasses structural, electronic, magnetic, elastic, mechanical, bonding, thermophysical, and optical aspects. Since tetragonal Gd2O3 has not been experimentally synthesized, the stability of the tetragonal phase is confirmed through assessments of its structural, lattice dynamical, thermodynamic, and mechanical attributes. Demonstrating semiconducting behavior, the electronic nature reveals a band gap of 1.241 eV. The density of states (DOS) illustration validates the semiconductor electronic character, and the calculated magnetic moment, determined through up-down spin DOS, is 3.06 μB/f.u. The Poisson’s ratio value reflects the dominance of ionic bonding in Gd2O3, a finding corroborated by bond population analysis. Impressively, the tetragonal Gd2O3 displays elevated lattice thermal conductivity value in comparison to its cubic, monoclinic, and hexagonal counterparts. Furthermore, the determined melting point registers at 1709.31 K. In the realm of optics, an analysis based on frequency dependence reveals that tetragonal Gd2O3 holds promise as a candidate for optoelectronic applications, particularly in the ultraviolet (UV) energy range.