Lattice Mismatch Research Articles

Improving Epitaxial Growth of γ‐Al2O3 Films via Sc2O3/Y2O3 Oxide Buffers

Heteroepitaxial growth of γ‐Al2O3 on Sc2O3/Y2O3/Si (111) is achieved with oxygen plasma‐assisted molecular beam epitaxy in order to prevent polycrystalline grain boundary formation caused by lattice mismatch. Substrate temperature as well as oxygen flow are adjusted to optimize epitaxial growth conditions around 715–760 °C and 1.9 sccm, respectively. Epitaxial growth is monitored in situ by reflection high‐energy diffraction, while surface morphology is studied by scanning electron microscopy ex‐situ. X‐ray diffraction indicates epitaxial out‐of‐plane 111 orientation with oxygen flow above 0.6 sccm. However, transmission electron microscopy shows stacking fault formation for high oxygen flows. Finally, nanobeam electron diffraction confirms Smrčok model of a spinel‐like γ‐Al2O3 crystal structure.

Strain and Piezoelectric Control of Electronic and Photonic Properties of p − n Diodes

Abstract Piezoelectricity is a well-known effect in a vast number of technologically important insulators and semiconductors and exists in $20$ out of the $32$ three-dimensional crystal classes. The piezoelectric effect is the driving mechanism behind several classical sensors and transmitters, and also most recently, in many nanodevices. Zhong Lin Wang coined the fields piezotronics and piezo-phototronics where the piezoelectric effect plays a dominant role. Piezoelectricity couples in a linear fashion mechanical strain to electrical fields and vice versa. In solids, there is another linear coupling between strain and the electric potential, known as the deformation potential effect. While linear in its coupling nature, this effect does not require the solid to be non-centrosymmetric in contrast to the piezoelectric effect. Moreover, the deformation potential effect is quantitatively huge and leads to changes in the conduction and valence band edges of III-V and II-VI materials of, typically, $50-100$~meV in the presence of $1$~\% strain. Therefore, the deformation potential effect is essential to determine the electronic and photonic properties of bulk and nanostructure semiconductors in the presence of strain. In this work, we compute the relative importance of piezoelectricity and the deformation potential effect in the presence of lattice mismatch and external strain. We choose $p-n$ junctions of ZnO/GaN structures but anticipate that the general conclusions can be carried over to other material structures. The main result of the present work is that both the inclusion of the deformation potential effect and piezoelectricity is crucial to correctly compute the effect of strain on $p-n$ junction current-voltage curves and photonic properties. In our analysis of wurtzite heterostructures, the spontaneous polarization effect is also included but this effect appears to play a minor role for electronic and photonic properties. 

Understanding the phase stability in multi-principal-component AlCuFeMn alloy

Abstract Method(s) that can reliably predict phase evolution across thermodynamic parameter space, especially in complex systems are of critical significance in academia as well as in the manufacturing industry. In the present work, phase stability in equimolar AlCuFeMn multi-principal-component alloy (MPCA) was predicted using complementary first-principles density functional theory (DFT) calculations, and ab-initio molecular dynamics (AIMD) simulations. Temperature evolution of completely disordered, partially ordered, and completely ordered phases was examined based on Gibbs free energy. Configurational, electronic, vibrational, and lattice mismatch entropies were considered to compute the Gibbs free energy of the competing phases. Additionally, elemental segregation was studied using ab-initio molecular dynamics (AIMD). The predicted results at 300K align well with room-temperature experimental observations using x-ray diffraction, scanning and transmission electron microscopy on a sample prepared using commercially available pure elements. The adopted method could help in predicting plausible phases in other MPCA systems with complex phase stability.

Heterophase Intermetallic Compounds for Electrocatalytic Hydrogen Production at Industrial-Scale Current Densities.

Heterophase nanomaterials have sparked significant research interest in catalysis due to their distinctive properties arising from synergistic effects of different components and the formed phase boundary. However, challenges persist in the controlled synthesis of heterophase intermetallic compounds (IMCs), primarily due to the lattice mismatch of distinct crystal phases and the difficulty in achieving precise control of the phase transitions. Herein, orthorhombic/cubic Ru2Ge3/RuGe IMCs with engineered boundary architecture are synthesized and anchored on the reduced graphene oxide. The Ru2Ge3/RuGe IMCs exhibit excellent hydrogen evolution reaction (HER) performance with a high current density of 1000 mA cm-2 at a low overpotential of 135 mV. The presence of phase boundaries enhances charge transfer and improves the kinetics of water dissociation while optimizing the processes of hydrogen adsorption/desorption, thus boosting the HER performance. Moreover, an anion exchange membrane electrolyzer is constructed using Ru2Ge3/RuGe as the cathode electrocatalyst, which achieves a current density of 1000 mA cm-2 at a low voltage of 1.73 V, and the activity remains virtually undiminished over 500 h.

Moiré superlattices arising from growth induced by screw dislocations in layered materials

Abstract Moiré superlattices (MSLs) are modulated structures produced from homogeneous or heterogeneous two-dimensional layers stacked with a twist angle and/or lattice mismatch. Enriching the methods for fabricating MSL and realizing the unique emergent properties are key challenges on its investigation. Here we recommend that the spiral dislocation driven growth is another optional method for the preparation of high quality MSL samples. The spiral structure stabilizes the constant out-of-plane lattice distance, causing the variations in electronic and optical properties. Taking SnS2 MSL as an example, we find prominent properties including large band gap reduction (~0.4 eV) and enhanced optical activity. First-principles calculations reveal that these unusual properties can be ascribed to the locally enhanced interlayer interaction associated with the Moiré potential modulation. We believe that the spiral dislocation driven growth would be a powerful method to expand the MSL family and broaden their scope of application.

Assessment of the potential structure and nucleation efficacy of multi-component heterogeneous substrate

In recent years, nucleation of multi-component heterogeneous interface structures has attracted increasing attention due to their excellent grain refinement and anti-poisoning capabilities in Al-Si alloy. In this research, a general methodology was proposed to predict the surface structure and meanwhile evaluate the grain refinement efficacy of the multi-component boride nucleants based on a comprehensive experimental and theoretical study of a novel Al-Si alloy refiner, i.e., Al-3.5Nb-1V-1B. By using high-resolution electron microscopy, the (Nb, V)B2 particle with a characteristic “core-shell” surface structure was observed, attributed to V adsorption driven by interfacial energy minimization, validated by ab initio calculations. A general interfacial energy-based model was then proposed which predicts the multi-component boride substrate structure, well consistent with the experimental findings. The nucleation potency of different substrates was analyzed in atomic scale and only if the interfacial atomic vibration was considered together with the nucleation-influencing factors (i.e., the lattice mismatch and the anti Si-poisoning effect), the predicted nucleation potency order can agree well with the experimental results. A thermodynamics-kinetics combined analytic model was summarized by coupling the lattice mismatch parameter, the interfacial Si adsorption energy and the interfacial atomic vibration amplitude, which accurately evaluates the multi-component boride grain refiners for the Al-Si alloys.

High gain NiO/ZnO heterojunction photodiodes operated in Deep-ultraviolet region

Epitaxially matched (0001) Al2O3 single substrates are utilized to design p-n heterojunctions (p-NiO/n-ZnO) as they offer low defect density for device fabrication due to small lattice mismatches. Using the radio frequency sputtering technique, the NiO/ZnO thin film-based heterojunction has been fabricated by varying the n-type film's (ZnO) thickness for ultra-violet (UV) photodiode application. It has been investigated how different ZnO film thicknesses affect junction parameters and photoresponse properties. The high photosensitivity (∼ 104), enhanced current gain (∼ 105) and fast response obtained at very low UV intensity (0.62μW/cm2) at 300 nm wavelength are attributed to the internal gain mechanism (recombination tunnelling and space-charge limited current conduction with the remarkable effect of the presence of excess free oxygen) in these devices. The prepared heterojunction photodiode with high speed and deep-UV sensitivity can be a potential solution for visible blind UV detection.

ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures.

We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN(11̅00) surface. To this end, ScN is grown on freestanding GaN(11̅00) substrates and self-assembled GaN nanowires exhibiting (11̅00) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]∥GaN(11̅00)[0001], providing a congruent, low-symmetry interface. The 13.1% uniaxial lattice mismatch occurring in this orientation mostly relaxes within the first few monolayers of growth by forming a near-coincidence site lattice, where 7 GaN planes coincide with 8 ScN planes, leaving the ScN surface nearly free of extended defects. Overgrowth of the ScN with GaN leads to a kinetic stabilization of the zinc blende phase, that rapidly develops wurtzite inclusions nucleating on {111} nanofacets, commonly observed during zinc blende GaN growth. Our ScN/GaN(11̅00) platform opens a new route for the epitaxy of twin-free metal-semiconductor heterostructures including closely lattice-matched GaN, ScN, HfN, and ZrN compounds.

Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations

Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice distortion at the TDs, we demonstrate that penetrating pores along TDs can be formed in both p- and n-type heteroepitaxial Ge layers through a preferential etching. It has been found that the preferential etching at TD sites takes place in the porosification process of Ge-on-Si samples and is independent of the doping type and concentration. The penetrating pores follow the path of the TD lines and can penetrate the entire Ge layer of 1.3 μm to further porosificate the Si substrate. The effects of anodic current density and total etching duration have been thoroughly investigated on forming penetrating pores at TD sites. The dissolution mechanism in the porosification process has been revealed by dissolution valence calculation and recorded potential curves. Our findings shed light on Ge perforation in both p- and n-type Ge-on-Si and show great potential in Si-based integrated photonics and microelectronics.

Van der Waals Epitaxial Growth of Ultrathin Indium Antimonide on Arbitrary Substrates through Low-Thermal Budget.

III-V semiconductors possess high mobility, high frequency response, and detection sensitivity, making them potentially attractive for beyond-silicon electronics applications. However, the traditional heteroepitaxy of III-V semiconductors is impeded by a significant lattice mismatch and the necessity for extreme vacuum and high temperature conditions, thereby impeding their in situ compatibility with flexible substrates and silicon-based circuits. In this study, a novel approach is presented for fabricating ultrathin InSb single-crystal nanosheets on arbitrary substrates with a thickness as thin as 2.4nm using low-thermal-budget van der Waals (vdW) epitaxy through chemical vapor deposition (CVD). In particular, in situ growth has been successfully achieved on both silicon-based substrates and flexible polyimide (PI) substrates. Notably, the growth temperature required for InSb nanosheets (240°C) is significantly lower than that employed in back-end-of-line processes (400°C). The field effect transistor devices based on fabricated ultrathin InSb nanosheets exhibit ultra-high on-off ratio exceeding 108 and demonstrate minimal gate leakage currents. Furthermore, these ultrathin InSb nanosheets display p-type characteristics with hole mobilities reaching up to 203 cm2 V-1 s-1 at room temperatures. This study paves the way for achieving heterogeneous integration of III-V semiconductors and facilitating their application in flexible electronics.

Study on the metallurgical mechanisms of inclusions in the FGH4096 alloy during electron beam smelting

In this study, the metallurgical mechanisms of inclusions during electron beam smelting (EBS) of a FGH4096 powder superalloy was investigated. The macroscopic morphology of the ingots, as well as the composition and structure of inclusions were studied. The effect of electron beam smelting parameters on the cooling rate, O/N content, number density and size of inclusions have been revealed. Besides, the mechanisms for inclusions removal and formation were elucidated. The results show that inclusions in the final solidification zone are mainly oxides (simple tetragonal CrO2, hexagonal Al2O3, and face-centered cube TiN), whereas the complex inclusions and carbon nitrides with Al2O3 and TiN as the nucleation cores are mainly present in the matrix. With the increase in smelting power and time, both the cooling rate and O/N content decsrease, and the smelting power shows a greater impact on the cooling rate. The number density of total inclusions increases with the increase in the smelting power. As the smelting time increases, the number density of total inclusions decreases, while the size of complex inclusions and carbon nitrides increases. This is attributed to the combined effect of cooling rate and O/N concentration in the alloy under different smelting parameters. Thermodynamic calculations indicate that Al2O3 forms in the solid-liquid phase region. The precipitation of TiN occurs when the alloy solidifies, and its precipitation temperature is higher than that of TiC. The lattice mismatch between Al2O3 and TiN is 8.14%, while that between TiC and TiN is 6.94%, which effectively promotes the heterogeneous nucleation of complex inclusions and carbon nitrides. The formation mechanisms of complex inclusions and carbon nitrides provide a theoretical basis for purification of superalloys by electron beam metallurgy.

Interfacial strain induced giant magnetoresistance and magnetodielectric effects in multiferroic BCZT/LSMO thin film heterostructures

Layered thin films of the ferroelectric perovskite Ba0.85Ca0.15Ti0.9Zr0.1O3 (BCZT) and the ferromagnetic half-metal La0.80Sr0.20MnO3 (LSMO) are well-known multiferroic systems that show promise for spintronic applications. In this work, the structure–property relationships are explored in novel BCZT/LSMO thin film heterostructures with optimized ferroic properties. Epitaxial BCZT/LSMO thin film heterostructures are grown by varying the lattice mismatch strains on single crystal LaAlO3 (LAO) (100) and MgO (100) substrates using the pulsed laser deposition technique. The epitaxial strain in the films gives rise to a tetragonal distortion of the BCZT and LSMO unit cells and significantly affects their magnetotransport and magnetodielectric properties. The BCZT/LSMO/LAO heterostructure exhibits a colossal magnetoresistance effect due to a large out-of-plane tensile strain, which induces enhanced carrier hopping in the LSMO layer as compared to the BCZT/LSMO/MgO film. The larger tetragonal distortion of the BCZT unit cell in BCZT/LSMO/MgO contributes to higher dielectric permittivity, with a greater dielectric maxima temperature and freezing temperature. Magnetodielectric measurements reveal a hitherto unobserved giant magnetodielectric effect in the BCZT/LSMO/MgO film, attributed to a large in-plane strain, which induces interfacial polarization distortion at the interfacial layer. Overall, this work elucidates the unique strain and charge-mediated cross-coupled phenomena of magnetic and electric orders in multiferroic thin film heterostructures, which are critical for their technological applications.

Lattice Mismatch at the Heterojunction of Perovskite Solar Cells.

Lattice mismatch significantly influences microscopic transport in semiconducting devices, affecting interfacial charge behavior and device efficacy. This atomic-level disordering, often overlooked in previous research, is crucial for device efficiency and lifetime. Recent studies have highlighted emerging challenges related to lattice mismatch in perovskite solar cells, especially at heterojunctions, revealing issues like severe tensile stress, increased ion migration, and reduced carrier mobility. This review systematically discusses the effects of lattice mismatch on strain, material stability, and carrier dynamics. It also includes detailed characterizations of these phenomena and summarizes the current strategies including epitaxial growth and buffer layer, as well as explores future solutions to mitigate mismatch-induced issues. We also provide the challenges and prospects for lattice mismatch, aiming to enhance the efficiency and stability of perovskite solar cells, and contribute to renewable energy technology advancements.

Lattice Mismatch at the Heterojunction of Perovskite Solar Cells

Lattice mismatch significantly influences microscopic transport in semiconducting devices, affecting interfacial charge behavior and device efficacy. This atomic‐level disordering, often overlooked in previous research, is crucial for device efficiency and lifetime. Recent studies have highlighted emerging challenges related to lattice mismatch in perovskite solar cells, especially at heterojunctions, revealing issues like severe tensile stress, increased ion migration, and reduced carrier mobility. This review systematically discusses the effects of lattice mismatch on strain, material stability, and carrier dynamics. It also includes detailed characterizations of these phenomena and summarizes the current strategies including epitaxial growth and buffer layer, as well as explores future solutions to mitigate mismatch‐induced issues. We also provide the challenges and prospects for lattice mismatch, aiming to enhance the efficiency and stability of perovskite solar cells, and contribute to renewable energy technology advancements.

Moiré band renormalization due to lattice mismatch in bilayer graphene

We investigated the band renormalization caused by the compressive-strain-induced lattice mismatch in parallel AA stacked bilayer graphene using two complementary methods: the tight-binding approach and the low-energy continuum theory. While a large mismatch does not alter the low-energy bands, a small one reduces the bandwidth of the low-energy bands along with a decrease in the Fermi velocity. In the tiny-mismatch regime, the low-energy continuum theory reveals that the long-period moiré pattern extensively renormalizes the low-energy bands, resulting in a significant reduction of bandwidth. Meanwhile, the Fermi velocity exhibits an oscillatory behavior and approaches zero at specific mismatches. However, the resulting low-energy bands are not perfectly isolated flat, as seen in twisted bilayer graphene at magic angles. These findings provide a deeper understanding of moiré physics and offer valuable guidance for related experimental studies in creating moiré superlattices using two-dimensional van der Waals heterostructures.

Preparation and Tribological Performance of Multi-Layer van der Waals Heterostructure WS2/h-BN

Van der Waals heterostructures with incommensurate contact interfaces show excellent tribological performance, which provides solutions for the development of new solid lubricants. In this paper, a facile electrostatic layer-by-layer self-assembly (LBL) technique was proposed to prepare multi-layer van der Waals heterostructures tungsten disulfide/hexagonal boron nitride (vdWH WS2/h-BN). The h-BN and WS2 were modified with poly (diallyldimethylammonium chloride) (PDDA) and sodium dodecyl benzene sulfonate (SDBS) to obtain the positively charged PDDA@h-BN and the negatively charged SDBS@WS2, respectively. When the mass ratio of PDDA to h-BN and SDBS to WS2 were both 1:1 and the pH was 3, the zeta potential of PDDA@h-BN and SDBS@WS2 were 60.0 mV and −50.1 mV, respectively. Under the electrostatic interaction, the PDDA@h-BN and SDBS@WS2 attracted each other and stacked alternately along the (002) crystal plane forming the multi-layer (four-layer) vdWH WS2/h-BN. The addition of the multi-layer vdWH WS2/h-BN (1.0 wt%) to the base oil resulted in a significant reduction of 33.8% in the friction coefficient (0.104) and 16.8% in the wear rate (4.43 × 10−5 mm3/(N·m)). The excellent tribological property of the multi-layer vdWH WS2/h-BN arose from the lattice mismatch (26.0%), a 15-fold higher interlayer slip possibility, and the formation of transfer film at the contact interface. This study provided an easily accessible method for the multi-layer vdWH with excellent tribological properties.

Epitaxial growth and characterization of GaAs (111) on 4H-SiC

Epitaxial growth and characterization of GaAs (111) on 4H-SiC

Simultaneous NIR Emission and Thermal Stability Enhancement in Garnet‐Type NIR Phosphors through the Synergistic Effect of Lattice Distortion and Enhanced Rigidity

AbstractEven though there have been significant advancements in the development of Cr3+‐activated near‐infrared (NIR) phosphors, the challenge still remains to develop highly efficient and thermally stable NIR phosphors. Here, the Ca4‐xZnxHfGe3O12:0.03Cr3+ solid solution phosphors with 834–806 nm NIR emission are constructed by substituting Zn2+ for Ca2+, thereby facilitating the formation of [ZnO6] luminescence site. The coexistence of [HfO6] and [Zn/CaO6] luminescence centers is confirmed through DFT calculation, time‐resolved photoluminescence (TRPL) spectroscopy, and low‐temperature‐photoluminescence (77 K) spectroscopy. The formation of [ZnO6] effectively resolves the issue of lattice mismatch between Cr3+ and Ca2+. Furthermore, the simultaneous enhancement of luminescence intensity and thermal stability is realized through a synergistic combination of lattice distortion and rigidity enhancement. By optimizing the substitution concentration of Cr3+, the internal quantum efficiency (IQE) of 92% and an external quantum efficiency (EQE) of 29% are finally achieved. Meanwhile, the thermal stability is also enhanced from 59%@400 K (x = 0) to 81%@400 K (x = 0.8). The developed NIR phosphor‐converted light‐emitting diodes (pc‐LEDs) exhibit promising prospects in the fields of security, biomedicine, non‐destructive testing and rapid identification.

Behavior of Microstrain in Nd3+-Sensitized Near-Infrared Upconverting Core-Shell Nanocrystals for Defect-Induced Tailoring of Luminescence Intensity.

In an attempt to optimize the upconversion luminescence (UCL) output of a Nd3+-sensitized near-infrared (808 nm) upconverting core-shell (CS) nanocrystal through deliberate incorporation of lattice defects, a comprehensive analysis of microstrain both at the CS interface and within the core layer was performed using integral breadth calculation of high-energy synchrotron X-ray (λ = 0.568551 Å) diffraction. An atomic level interpretation of such microstrain was performed using pair distribution function analysis of the high-energy total scattering. The core NC developed compressive microstrain, which gradually transformed into tensile microstrain with the growth of the epitaxial shell. Such a reversal was rationalized in terms of a consistent negative lattice mismatch. Upon introduction of lattice defects into the CS systems upon incorporation of Li+, the corresponding UCL intensity was maximized at some specific Li+ incorporation, where the tensile microstrain of CS, compressive microstrain of the core, and atomic level disorders exhibited their respective extreme values irrespective of the activator ions.

Implanting Colloidal Nanoparticles into Single‐Crystalline Zeolites for Catalytic Dehydration

AbstractThe encapsulation of functional colloidal nanoparticles (100 nm) into single‐crystalline ZSM‐5 zeolites, aiming to create uniform core–shell structures, is a highly sought‐after yet formidable objective due to significant lattice mismatch and distinct crystallization properties. In this study, we demonstrate the fabrication of a core–shell structured single‐crystal zeolite encompassing an Fe3O4 colloidal core via a novel confinement stepwise crystallization methodology. By engineering a confined nanocavity, anchoring nucleation sites, and executing stepwise crystallization, we have successfully encapsulated colloidal nanoparticles (CN) within single‐crystal zeolites. These grafted sites, alongside the controlled crystallization process, compel the zeolite seed to nucleate and expand along the Fe3O4 colloidal nanoparticle surface, within a meticulously defined volume (1.5×107≤V≤1.3×108 nm3). Our strategy exhibits versatility and adaptability to an array of zeolites, including but not restricted to ZSM‐5, NaA, ZSM‐11, and TS‐1 with polycrystalline zeolite shell. We highlight the uniformly structured magnetic‐nucleus single‐crystalline zeolite, which displays pronounced superparamagnetism (14 emu/g) and robust acidity (~0.83 mmol/g). This innovative material has been effectively utilized in a magnetically stabilized bed (MSB) reactor for the dehydration of ethanol, delivering an exceptional conversion rate (98 %), supreme ethylene selectivity (98 %), and superior catalytic endurance (in excess of 100 hours).