The BaMoO4/FeCoNiCrMo (BMO/HEA(Mo)), BMO/FeCoNiCrTi (HEA(Ti)) and BMO/FeCoNiCrTiAl (HEA(Al)) phosphors were synthesized by an integrated technology. The structural characterization showed that except the main lattice phase, only the characteristic peak of high-entropy alloys (HEAs) appeared in BMO/HEAs phosphors and the existence of lattice distortion for [MoO4]2- in BMO. The microstructure analysis confirmed that there is a special interface contact between BMO and HEAs, which makes the metal in HEAs easy to have a certain connection with BMO, which causes the lattice distortion of [MoO4]2- to intensify, thus accelerating the recombination rate of charge carriers in BMO/HEAs phosphors. The BMO/HEAs phosphors have a strong emission peak at 445 nm under the excitation wavelength of 285 nm. Theoretical calculations and experiments confirmed that the luminescence of BMO/HEAs phosphor is caused by the lattice distortion of [MoO4]2-, the interface defect of BMO/HEAs and the recombination of charge carriers. The Mo in HEA(Mo) can accelerate the recombination rate of charge carriers between BMO and HEAs, thus enhancing the luminescence performance of BMO/HEA(Mo) phosphor and exhibit dynamic fluorescence anti-counterfeiting applications. However, the Ti in HEA(Ti) and Al in HEA(Al) can easily separate the charge carriers between BMO and HEAs, thus reducing the luminescence of BMO/HEA(Ti) and BMO/HEA(Al) phosphors.