Lateral Quantum Dot Research Articles

Electronic transport in ballistic structures

We report studies of electron transport in the quantized ballistic transport regime and we also discuss the properties of lateral quantum dots defined by the split gate technique.

Two phonon density of states of partially disordered crystal NH 4I

Theoretical and numerical calculations of two-phonon processes on gated lateral semiconductor quantum dots (QDs) are outlined. A heterostructure made with two laterally coupled QDs, in the presence of an external magnetic field, has been employed in order to study the electron scattering rate due to two-phonon processes. The formalism is based on the acoustic phonon modes via the unscreened deformation potential and the piezoelectric interaction whenever the crystal lattice lacks a center of inversion symmetry. The rates are calculated by using second order perturbation theory. The strong dependence of the scattering rate on the external magnetic field, lattice temperature and QDs separation distance is presented.