Laser Structures Research Articles

High-speed, scanned laser structuring of multi-layered eco/bioresorbable materials for advanced electronic systems

Physically transient forms of electronics enable unique classes of technologies, ranging from biomedical implants that disappear through processes of bioresorption after serving a clinical need to internet-of-things devices that harmlessly dissolve into the environment following a relevant period of use. Here, we develop a sustainable manufacturing pathway, based on ultrafast pulsed laser ablation, that can support high-volume, cost-effective manipulation of a diverse collection of organic and inorganic materials, each designed to degrade by hydrolysis or enzymatic activity, into patterned, multi-layered architectures with high resolution and accurate overlay registration. The technology can operate in patterning, thinning and/or cutting modes with (ultra)thin eco/bioresorbable materials of different types of semiconductors, dielectrics, and conductors on flexible substrates. Component-level demonstrations span passive and active devices, including diodes and field-effect transistors. Patterning these devices into interconnected layouts yields functional systems, as illustrated in examples that range from wireless implants as monitors of neural and cardiac activity, to thermal probes of microvascular flow, and multi-electrode arrays for biopotential sensing. These advances create important processing options for eco/bioresorbable materials and associated electronic systems, with immediate applicability across nearly all types of bioelectronic studies.

∼8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition

Room-temperature, pulsed-operation lasing of 8.5 μm-emitting InP-based quantum cascade lasers (QCLs), with low threshold-current density and watt-level output power, is demonstrated from structures grown on (001) GaAs substrates by metal-organic chemical vapor deposition. Prior to growing the laser structure, which contains a 35-stage In0.53Ga0.47As/In0.52Al0.48As lattice-matched active-core region, a ∼2 μm-thick nearly fully relaxed InP buffer with strained 1.6 nm-thick InAs quantum-dot-like dislocation-filter layers was grown. A smooth terminal buffer-layer surface, with roughness as low as 0.4 nm on a 10 × 10 μm2 scale, was obtained, while the estimated threading-dislocation density was in the mid-range × 108 cm−2. A series of measurements, on lasers grown on InP metamorphic buffer layers (MBLs) and on native InP substrates, were performed for understanding the impact of the buffer-layer's surface roughness, residual strain, and threading-dislocation density on unipolar devices such as QCLs. As-cleaved devices, grown on InP MBLs, were fabricated as 25 μm × 3 mm deep-etched ridge guides with lateral current injection. The results are pulsed maximum output power of 1.95 W/facet and a low threshold-current density of 1.86 kA/cm2 at 293 K. These values are comparable to those obtained from devices grown on InP: 2.09 W/facet and 2.42 kA/cm2. This demonstrates the relative insensitivity of the device-performance metrics on high residual threading-dislocation density, and high-performance InP-based QCLs emitting near 8 μm can be achieved on lattice-mismatched substrates.

Research on laser preparation and grinding performance of hydrophilic structured grinding wheels

In order to solve the problems of workpiece damage and grinding wheel clogging when grinding difficult-to-cut materials such as alumina ceramics, organisms with regular hexagonal structures distributed on the body surface and with strong hydrophilicity and high anti-wear functions were used as biomimetic objects for the first time, and the preparation process optimization, structure size design and grinding performance evaluation of hydrophilic structured bronze-bonded diamond grinding wheels were explored in this paper. The influence of the preparation process parameters on the micro-topography and the dimensional accuracy of the structure on the surface of the grinding wheel was revealed, and a new laser structuring process based on the coordinated control of focus position and scanning times was proposed, which could efficiently prepare regular hexagonal structures with a small wall inclination angle and a depth of several millimeters on the surface of the grinding wheel. It was the first to clarify the influence of sub-millimeter-scale structure size on the contact angle of grinding fluid droplet on the surface of the grinding wheel and the surface hydrophilicity of the grinding wheel. Compared with that of the non-structured grinding wheel, the hydrophilicity of the structured grinding wheel was significantly improved, and its surface hydrophilicity increased with the increase of the structure spacing and depth, but had little correlation with the structure side length. The grinding performance of hydrophilic structured grinding wheels and non-structured grinding wheels was evaluated under extreme working conditions. Under the condition of grinding depth of 50 μm, 100 μm and 200 μm, compared with that of the non-structured grinding wheel, the peak grinding temperature of the structured grinding wheel was reduced by 18.0%, 30.4% and 15.2%, respectively, and the surface damage depth of the alumina ceramic after grinding by the structured grinding wheel was reduced by 53.7%, 46.8% and 24.3%, respectively. The hydrophilic structured grinding wheel can enhance the storage and transportation capacity of grinding fluid/chips, effectively relieve the clogging and dullness of the grinding wheel, and significantly reduce the high temperature and damage of grinding. In the next step, we will try to apply this type of grinding wheel to form grinding, in order to provide a reliable solution for suppressing form grinding damage of difficult-to-cut materials.

Long-Distance High-Power Wireless Optical Energy Transmission Based on VECSELs

Wireless charging systems are critical for safely and efficiently recharging mobile electronic devices. Current wireless charging technologies involving inductive coupling, magnetic resonance coupling, and microwave transmission are bulky, require complicated systems, expose users to harmful radiation, and have very short energy transmission distances. Herein, we report on a long-distance optical power transmission system by optimizing the external cavity structure of semiconductor lasers for laser charging applications. An ultra-long stable oscillating laser cavity with a transmission distance of 10 m is designed. The optimal laser cavity design is determined by simulating the structural parameters for stable operation, and an improved laser cavity that produces an output of 2.589 W at a transmission distance of 150 cm is fabricated. The peak power attenuation when the transmission distance increases from 50 to 150 cm is only approximately 6.4%, which proves that this wireless power transfer scheme based on a vertical external cavity surface-emitting laser can be used to realize ultra-long-distance power transmission. The proposed wireless energy transmission scheme based on a VECSEL laser is the first of its kind to report a 1.5 m transmission distance output power that exceeds 2.5 W. Compared with other wireless energy transmission technologies, this simple, compact, and safe long-distance wireless laser energy transmission system is more suitable for indoor charging applications.

Enhancement of the corrosion resistance of mild steel with femtosecond laser- nanostructuring and CrCoNi medium entropy alloy coating

In this work, the corrosion resistance of mild steel surface nanostructured with a femtosecond laser and coated with high corrosion resistant CrCoNi (CCN) medium entropy alloy through magnetron sputtering is studied. Substantial improvement in corrosion protection was achieved by applying a combination of high-power femtosecond laser surface nano-structuring at ambient conditions and thin-film coating with (CCN) medium entropy alloy. XRD analysis revealed that femtosecond laser structuring increases the susceptibility of the surfaces to Fe2O3 nucleation through oxidation. The surface wettability measurements and electrochemical polarization tests revealed that the combined approach of femtosecond laser structuring and magnetron sputter coating is the best for desired high corrosion resistance. Through this novel method, the resulting corrosion resistance of mild steel was improved by more than one-fold. The results are explained considering the detailed microstructural analysis. The presented findings open new possibilities for corrosion prevention using a combination of new powerful technologies that yield to unprecedented corrosion-inhibition efficacy.

Optimized CT-TDLAS reconstruction performance evaluation of least squares with the polynomial-fitting method

Computed tomography-tunable diode laser absorption spectroscopy (CT-TDLAS) has been widely used in the diagnosis of the combustion flow field. Several optimized CT reconstruction algorithms such as iteration methods, transformation methods, and nonlinear least squares were applied. Considering the industrial application background, the performances of algebraic iteration reconstruction with the simultaneous algebra reconstruction technique (SART), Tikhonov regularization, and least squares with the polynomial fitting method were discussed in this study. For the mentioned algorithm, identical simulated reconstruction parameters that contained 32-path laser structures, assumed temperature distribution, and absorption databases were adopted to evaluate the reconstruction performance including accuracy, efficiency, and measurement of environment applicability. In this study, different CT reconstruction algorithms were also used to calculate the temperature distribution of the Bunsen burner flame. The different reconstruction results were compared with thermocouple detection data. With the theoretically simulated and experimental analysis, the least squares with the polynomial fitting technique has advantages in reconstruction accuracy, calculation efficiency, and laser path applicability for the measurement condition. It will be helpful in enhancing CT-TDLAS technique development.

Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range.

In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (µTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer. By combining the outputs of the two laser cavities on chip, wavelength tunability over S+C+L-bands is achieved.

(Si)GeSn Isothermal Multilayer Growth for Specific Applications Using GeH4 and Ge2H6

The experimental demonstration of Ge1-xSnx alloys lasers opened group-IV materials towards high-performance electronic and photonic devices that can be easily integrated with the current Si semiconductor technology. In recent years, GeSn-based optoelectronic devices including light-emitting and detectors, modulators, and CMOS have been proven.The major challenges for the Ge1-xSnx epitaxy arise from the low solid solubility of Sn in Ge, the large lattice mismatch, and the reduced thermal stability between Ge and Sn. All these are becoming extremely critical at higher Sn contents. Non-equilibrium conditions offered by molecular beam epitaxy (MBE), chemical vapor deposition (CVD), flash lamp, or laser annealing have been lately investigated. Between them, CVD is to date the preferred growth technique for its current development compatible with the industry offering micron-thick layers with the highest crystal quality.While Tin-tetrachloride (SnCl4) becomes the standard Sn precursor, for Ge different gasses, like germane (GeH4) and digermane (Ge2H6) are used attempting to archive high Sn incorporation and high material quality. While Ge1-xSnx films with the same high Sn content can be obtained regardless of the used precursor, the advantages and disadvantages of each precursor are discussed in this work. The use of Ge2H6 is accompanied by high growth rates, being favorable in applications where relatively thick films are needed, such as laser structures. On the other hand, with a relatively low growth rate, GeH4 provides a greater thickness control, achieving clear and sharp interfaces in heterostructures. For this reason, GeH4 is the appropriate precursor for quantum transport or spintronic.The biggest challenge in heterostructure designs is going up and down in Sn content. The growth of a Ge1-ySny on a Ge1-xSnx, y<x, or SiGeSn layer cannot be performed by increasing the growth temperature. Post-annealing processes lead to strong crystallinity degradation of the already grown layer by strong Sn diffusion or Sn segregation due to the limited thermal stability of Ge1-xSnx alloys.In this work, we address simple methodologies to enhance the gradient or step Sn content without changing the process temperature. Controlling only the carrier gas flow while keeping the standard growth parameters constant, high-quality Ge1-xSnx alloys with uniform Sn content up to 15 at.% are obtained. The proposed method acts as guidance to produce Ge1-xSnx heterostructures that can be extended to any CVD reactor, independently of the used precursor, GeH4 or Ge2H6. Different devices structures are presented proving the applicability of the isothermal multilayer growth. Figure 1

(Invited) 3D Electrode Architectures for High Power and High Energy Lithium-Ion Battery Operation - Recent Approaches and Process Upscaling

During the next decades, combustion driven cars will be completely replaced by electrical vehicles (EVs) and it seems quite obvious that liquid electrolyte lithium-ion batteries (LIBs) will be the dominating energy storage system for the next at least 5 to 10 years. As a consequence, in Europe numerous Gigafactories have recently been planned with this state of technology. However, the current lithium-ion battery technology suffers so far from some restrictions like the inability to combine high power and high energy operations at the same time. This limitation is mainly attributed to the cathode architecture and respective mass loading. In addition, the further demand for a significantly enhanced fast charging mainly requires an optimization of the anode design flanked by a high areal capacity. Advanced 3D electrode architectures based on a thick film electrode concept seem to be the most promising approach to overcome the current limitations in battery performances. However, respective technology innovations need to provide a high compatibility grade to existing manufacturing routes in order to enable the required integration in existing and planned factories. For so-called “generation 3” materials, i.e., nickel-rich lithium nickel manganese cobalt oxide (NMC) cathode and silicon-based anode materials, structuring technologies using cutting edge ultrafast high power lasers, are being developed in order to manufacture 3D electrode architectures with high areal capacity. Multibeam laser processing using diffractive optical elements and dual scanner approaches were established in order to enable high processing speeds in roll-to-roll electrode handling systems. The technology readiness level (TRL 6) is demonstrated for pouch cells geometries. For water-based NMC 622 and silicon-graphite composites the laser structuring process was developed. Different structures including hole, grid, and line patterns, were studied regarding their impact on electrochemical performances such as high-rate capability and cell lifetime. Lithium concentration profiles of unstructured and structured electrodes were studied post mortem using laser-induced breakdown spectroscopy (LIBS) in order to evaluate lithium intercalation/deintercalation efficiencies and detect possible cell degradation processes. In comparison to unstructured electrodes, 3D electrodes could hereby always be identified as superior: unstructured thick film electrodes show a significant drop in capacity retention for high power operation and tend to form hot spots acting as starting point for cell failure. The upscaling process is flanked by a further improvement of electrode design. For this purpose very recently laser induced forward transfer (LIFT) is applied as printing technology to draw new concepts for sophisticated model electrode architectures with advanced electrochemical performances. Finally, the micro-/nano-scaled texturing of current collectors and separator material is discussed as further possible approaches for boosting the electrochemical performances of LIB pouch cells.

Single-Step femtosecond laser structuring of multifunctional colorful metal surface and its origin

Metal colorizing by ultrafast laser has aroused great attention in the fields of industrial marking and anti-counterfeiting. However, its colorizing mechanism is still not very clear and lurks beneath its beautiful exterior. In the present work, pure copper is used as a case study object for metal colorizing. The copper surface treated by femtosecond laser direct writing (fs-LDW) is endowed with black, bluish-violet, and iridescent color under different illumination and observation conditions. An in-depth study of the mechanism of such a phenomenon is carried out. First, it is found that the color features could be removed after being etched by a diluted solution of hydrochloric acid. Based on that, the hemispheric reflection spectra, surface morphology and superficial composition at different micro-areas are characterized and compared before and after being etched. The formation of the surface structures is explained by both experimental observation and simulation studies. Furthermore, based on the principles of color appearing, it is revealed that such exceptional colors are derived from surface structures, oxidation layers and material intrinsic color. The relationship between color performance and these three colorizing factors is also revealed. The method used in this study can be applied to the exploration of the coloration mechanism of other metals. In addition, the colorful surface by fs-LDW is superhydrophobic with low adhesion and anisotropic wettability, which can protect the colorized surface from contamination by self-cleaning performance and promote its practical application.

Structure, Microstructure, Hyperfine, Mechanical and Magnetic Behavior of Selective Laser Melted Fe92.4Si3.1B4.5 Alloy

A disordered ε-FeSi crystalline structure was produced by selective laser melting in Fe92.4Si3.1B4.5 powder alloys fabricated with different laser powers at a laser scanning speed of 0.4 m/s. The phase formation, microstructure, roughness, microhardness, and hyperfine and magnetic properties were studied using X-ray diffraction, scanning electron microscopy, atomic force microscopy, a profilometer, a microdurometer, transmission 57Fe Mössbauer spectrometry and vibrating sample magnetometry. The aim of this work was therefore to study the effect of laser power on the phase formation, microstructure, morphology, and mechanical, hyperfine and magnetic properties. The XRD patterns revealed the coexistence of a bcc α-Fe0.95Si0.05, a tetragonal Fe2B boride phase and a disordered ε-FeSi type structure. The existence of the disorder was confirmed by the presence of different FeSi environments observed in the Mössbauer spectra. The Fe2B boride contained about 51–54% of Fe atoms. The porosity and roughness decreased whereas laser power increased. The sample produced with a laser power of 90 W had a smooth and dense surface, high microhardness (~1843 Hv) and soft magnetic properties (saturation magnetization Ms = 200 emu/g and coercivity Hc = 79 Oe).

Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE

In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition time in the strain compensated In0.67Ga0.33As/In0.36Al0.64As quantum cascade laser (QCL) structure grown on InP substrate by Metal Organic Vapor Phase Epitaxy (MOVPE). In situ reflectance spectroscopy and high resolution X-ray diffraction (HRXRD) technique have been used for the analysis of growth steps and crystalline quality of QCL structures, respectively. In addition, since thickness accuracy is very important for QCLs, two different thickness calculation methods have been used in the Global Fit simulation program for detailed thickness accuracy of structures. As a result, optimum values for thickness accuracy have been obtained as 5 and 10 s between undoped and Si-doped layers, respectively, as verified by the two methods.

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.

The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm−2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III−V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

A flexible and wearable dual band bio-based antenna for WBAN applications

This paper presents a flexible and wearable (on-body) dual band antenna operating in two Industrial, Scientific and Medical (ISM) frequency bands. The central frequencies selected are equal to 2.45 GHz and 5.8 GHz. In order to make the antenna suitable for Wireless Body Area Network (WBAN) applications, it is fabricated on a flexible biopolymer called cellulose laurate (CL). The proposed antenna, that has been designed and optimized on ANSYS HFSS, is realized using a process based on copper adhesive tape and laser structuring. The characterization of the antenna in terms of reflection coefficient, gain and radiation patterns shows a good agreement with the simulation data. Compared to state-of-the-art antennas, the investigated solution demonstrates competitive results. The proposed antenna also features stable performance under bending conditions and the estimated specific absorption rate (SAR) is well below the limits defined by international standards. All these results suggest that the proposed antenna is very well suited for potential wearable applications and is a step towards fully green electronics.

Battery‐Operated Mid‐Infrared Diode Laser Frequency Combs

AbstractMid‐wave infrared (MIR, 3–5 µm) optical frequency combs (OFC) are of critical importance for spectroscopy of fundamental molecular transitions in space and terrestrial applications. Although in this band OFCs can be obtained via supercontinuum or difference frequency generation using optical pumping schemes, unprecedented source miniaturization, and monolithic design are unique to electrically‐pumped semiconductor laser structures. To date, high‐brightness OFC generation in this region has been demonstrated in quantum‐ and interband cascade lasers (QCL/ICL), yet with sub‐optimal spectral properties. Here, an MIR quantum well diode laser (QWDL) OFC is shown, whose excellent spectral uniformity, narrow optical linewidths, and milliwatt optical power are obtained at a fraction of a watt of power consumption. The continuously tunable source offers ≈1 THz of optical span centered at 3.04 µm, and a repetition rate of 10 GHz. As a proof‐of‐principle, a directly‐battery‐operated MIR dual‐comb source is shown with almost 0.5 THz of optical coverage accessible in the electrical domain in microseconds. These results indicate the high suitability of QWDL OFCs for future chip‐based real‐time sensing systems in the mid‐infrared.

High Power Mid-Infrared Quantum Cascade Lasers Grown on Si

This article details the demonstration of a strain-balanced, InP-based mid-infrared quantum cascade laser structure that is grown directly on a Si substrate. This is facilitated by the creation of a metamorphic buffer layer that is used to convert from the lattice constant of Si (0.543 nm) to that of InP (0.587 nm). The laser geometry utilizes two top contacts in order to be compatible with future large-scale integration. Unlike previous reports, this device is capable of room temperature operation with up to 1.6 W of peak power. The emission wavelength at 293 K is 4.82 μm, and the device operates in the fundamental transverse mode.

Wide Bandgap Tuning of Violet Phosphorus Quantum Dots by Functionalization.

Violet phosphorus quantum dots (VPQDs) are promising structures for bioimaging, solar cells, LEDs, diode lasers, and transistors due to the quantum confinement effects. Bandgap tuning is important for QDs to adjust their emissions for various applications. Nevertheless, no bandgap tuning of VPQDs has been investigated, since the violet phosphorus has just recently been successfully produced and confirmed. In this work, the bandgap of VPQDs has been demonstrated to be effectively tuned from 2.3 to 3.1 eV by a facile solvothermal path in different solvents to introduce different functional groups. The HOMO-LUMO gaps of VPQDs from different functionalizations have also been calculated by density functional theory to be 2.73, 2.77, 2.74, 2.80, 2.51, and 2.56 eV, respectively, which are well-consistent with the experimental results. Our results provide a simple pathway for bandgap tuning of VPQDs, which can be used for future optoelectronic applications.

Optimisation of QCL Structures Modelling by Polynomial Approximation.

Modelling of quantum cascade laser (QCL) structures, despite a regular progress in the field, still remains a complex task in both analytical and numerical aspects. Computer simulations of such nanodevices require large operating memories and effective algorithms to be applied. Promisingly, by applying semi-analytical polynomial approximation method to computing potential, wave functions and electron charge distribution, accurate results and quick convergence of the self-consistent solution for the Schrödinger and Poisson equations are reachable. Additionally, such an approach makes the respective numerical models competitively effective. For contemporary QCL structures, with quantum wells quite typically forming complex systems, a special approach to determining self energies and coefficients of approximating polynomials is required. Under this paper we have analysed whether the polynomial approximation method can be successfully applied to solving the Schrödinger equation in QCL. A new algorithm for determining self energies has been proposed and a new method has been optimised for the researched structures. The developed solutions have been implemented as a new module for the finite model of the superlattice (FMSL) and tested on the QCL emitting light in the mid-infrared range.

Towards phase-stabilized Fourier domain mode-locked frequency combs

Fourier domain mode-locked (FDML) lasers are some of the fastest wavelength-swept light sources, and used in many applications like optical coherence tomography (OCT), OCT endoscopy, Raman microscopy, light detection and ranging, and two-photon microscopy. For a deeper understanding of the underlying laser physics, it is crucial to investigate the light field evolution of the FDML laser and to clarify whether the FDML laser provides a frequency comb structure. In this case, the FDML would output a coherent sweep in frequency with a stable phase relation between output colours. To get access to the phase of the light field, a beat signal measurement with a stable, monochromatic laser is performed. Here we show experimental evidence of a well-defined phase evolution and a comb-like structure of the FDML laser. This is in agreement with numerical simulations. This insight will enable new applications in jitter-free spectral-scanning, coherent, synthetic THz-generation and as metrological time-frequency ruler.

Real-time observation of dissipative multi-soliton complexes in a net-normal dispersion fiber laser

Recent progress in real-time measurement technology makes it possible to spectrally characterize multi-soliton complexes. Here, we report on real-time observation to the multi-pulse structures in a net-normal dispersion mode-locked fiber laser. With careful adjustment of cavity parameters, several kinds of multi-soliton complexes, such as the coexistence of soliton singlet and soliton molecule, as well as the coexistence of different types of soliton molecules, are realized in the experiment. Real-time spectral information of each pulse under multi-soliton states can be well resolved with the dispersive Fourier transformation technique, which is markedly different from the results measured by conventional measurement instruments. Note that this is the first reported the simultaneous generation of different types of soliton molecules in a fiber laser to our best knowledge. The findings help to understand the complicated dynamics of the coexisting pattern between different kinds of dissipative solitons.