The laser power converters, devices for optical to electrical energy conversion, based on the Vertical Epitaxial Hetero-Structure Architecture (VEHSA) design, has emerged recently as a promising concept that can offer the record open circuit voltage and conversion efficiencies, exceeding 20 V and 60% respectively. We present the heuristical method, based on the genetic algorithm (GA) for the optimization of power conversion efficiency of the VEHSA devices. The method is based on the inverse design paradigm in the materials/device modeling, providing for the bespoke, targeted, the design of the device. As an output our method is giving the optimal p/n junction thicknesses, doping concentrations and the optimal current through the VEHSA device. Those device parameters were optimized with radiative, as well as non-radiative Auger and Shockley-Read-Hall losses taken into account. Our heuristical model also reveal the importance of accurate prediction of the thickness of the first cell in the stack, that deviates significantly from those estimated by light penetration depth and Beer-Lambert law only. When all types of losses are taken into account, our model predicts the maximal efficiency of GaAs based VEHSA to be 69.43% for a device with one solar cell and 65.7% for the device with 15 subcells, which is in very good agreement with measured efficiencies of similar devices. We also analyse, and predict the efficiencies of devices based on Al0.33Ga0.67As (Eg=2 eV), In0.34Ga0.66As (Eg=0.92 eV), and GaSb (Eg=0.75 eV).