CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.