The degradation mechanism of GaN-based ultraviolet (UV-A) laser diodes (LDs) is analyzed by studying the changes of their electrical and optical properties after aging process with the operation current below the threshold current (Ith). After aging treatment, Ith increases, the slope efficiency decreases, and the leakage current increases. In particular, the emission spectra of aged LD show significant broadening, with additional peaks on the shorter wavelength side. Both cathodoluminescence and deep level transient spectrum results indicate defects can develop around the active region of the LD, even when the operation current is below Ith. This leads to an increase in trap-assisted tunneling current and non-radiative recombination. The observed defects may result from the diffusion of water molecule in the environment from the cavity facet into the active region and formation of ON–CN and VGaON complex defects. These defects not only reduce the effective carrier concentration injected into the quantum well but also increase non-radiative recombination. These results will contribute to our understanding of the degradation mechanism of UV LDs and the preparation of long lifetime UV LDs.