Large Spin Polarization Research Articles

Chiral-Induced Spin Selectivity and Non-equilibrium Spin Accumulation in Molecules and Interfaces: A First-Principles Study.

Electrons moving through chiral molecules are selected according to their spin orientation and the helicity of the molecule, an effect known as chiral-induced spin selectivity (CISS). The underlying physical mechanism is not yet completely understood. To help elucidate this mechanism, a non-equilibrium Green's function method, combined with a Landauer approach and density functional theory, is applied to carbon helices contacted by gold electrodes, resulting in spin polarization of transmitted electrons. Spin polarization is also observed in the non-equilibrium electronic structure of the junctions. While this spin polarization is small, its sign changes with the direction of the current and with the handedness of the molecule. While these calculations were performed with a pure exchange-correlation functional, previous studies suggest that computationally more expensive hybrid functionals may lead to considerably larger spin polarization in the electronic structure. Thus, non-equilibrium spin polarization could be a key component in understanding the CISS mechanism.

2D antiferromagnetic semiconducting FeCN with interesting properties.

Two-dimensional magnetic materials have demonstrated favorable properties (e.g., large spin polarization and net magnetization) for the development of next-generation spintronic devices. The discovery of such materials and insight into their magnetic coupling mechanism has become a research focus. Here, on the basis of first-principles structural search calculations, we have identified a fresh FeCN monolayer consisting of edge-sharing Fe triangle sublattices and FeC3N2 rings, which integrates antiferromagnetism, semiconductivity, and planarity. Interestingly, it possesses a large magnetic anisotropy energy (MAE) of 614 μeV per Fe atom, a narrow band gap (Eg) of 0.47 eV, a large magnetic moment of 3.15 μB, and a proper Néel temperature (TN) of 97 K. The direct exchange between the nearest-neighbor Fe atoms in the triangle sublattice is mainly responsible for the AFM ordering. Its high structural stability, stemming from the collective contribution of covalent C-C and C-N bonds, ionic Fe-N bonds, and metallic Fe-Fe bonds, provides a strong feasibility for experimental synthesis.

Probing antiferromagnetism in exfoliated Fe3GeTe2 using magneto-transport measurements.

Among the material class of van der Waals magnets, Fe3GeTe2 (FGT) has emerged as one of the most studied owing to features such as its relatively high Curie temperature, metallic nature, and large spin polarization. Though most studies only investigate its explicitly ferromagnetic properties, FGT is also predicted to have an antiferromagnetic phase in the out-of-plane direction emerging at temperatures below 150 K, leading to a blend of ferromagnetic and antiferromagnetic ordering. Here, we explore the emergence of this phase and its effects in FGT/h-BN heterostructures using magneto-transport measurements. The devices' anomalous Hall and magnetoresistance responses exhibit a complex trend with temperature that is consistent with multiple magnetic phases. In addition to the usual out-of-plane sensing, we also rotate the applied field to the in-plane direction and observe behavior resembling the planar topological Hall effect. Intriguingly, this response follows a similar temperature trend to the out-of-plane response. We also use the out-of-plane anomalous Hall response to show that, at sufficiently low temperatures, both positive and negative field-cooling results in an increased saturation Hall resistance. Such a field-cooling divergence is consistent with antiferromagnetic ordering resulting in a spin-glass like state in the sample. In addition to providing insight into one of the most exciting candidate materials for 2D magnetic devices, our work demonstrates the power of magneto-transport measurements to probe complex behavior in vdW magnets where common magnetometry techniques used on bulk samples may not be viable.

Ultra-thin magnetic film with giant phonon-drag for heat to spin current conversion.

A tightly confined 2D electron gas with good carrier mobility and large spin-polarization is an essential ingredient for the implementation of spin-caloritronic conversion device technology. Here we give evidence that the SrTiO3/EuTiO3/LaAlO3 heterostructure is a prototype material for this purpose. The presence of Eu induces strong spin-polarization in the 2D electron gas spontaneously formed at the interface and ferromagnetic order at low temperature. Furthermore, tight 2D confinement and spin-polarization can be highly enhanced upon charge depletion, in turn generating huge thermopower associated with the phonon-drag mechanism. Most importantly, the remarkable difference in the population of the two spin channels results in the giant spin-polarized Seebeck effect and in turn, giant spin voltages of mV K-1 order at the two ends of an applied thermal gradient. Our results represent a strong assessment to the capabilities of this interface for low-temperature spin-caloritronic applications.

Charge to spin conversion in van der Waals metal NbSe2

Quantum materials with a large charge current-induced spin polarization are promising for next-generation all-electrical spintronic science and technology. Van der Waals metals with high spin–orbit coupling and spin textures have attracted significant attention for an efficient charge-to-spin conversion process. Here, we demonstrate the electrical generation of spin polarization in NbSe2 up to room temperature. Characterization of NbSe2 shows superconducting transition temperature, Tc ∼ 7 K. To probe the current-induced spin polarization in NbSe2, we used a graphene-based non-local spin-valve device, where the spin-polarization in NbSe2 is efficiently injected and detected using non-local spin-switch and Hanle spin precession measurements. A significantly higher charge-spin conversion in NbSe2 is observed at a lower temperature. Systematic measurements provide the possible origins of the spin polarization to be predominantly due to the spin Hall effect or Rashba–Edelstein effect in NbSe2, considering different symmetry-allowed charge-spin conversion processes.

Spatial spin-spin correlations of the single-impurity Anderson model with a ferromagnetic bath

We investigate the interplay between the Kondo effect and the ferromagnetism by an one dimension Anderson impurity model with a spin partially polarized bath, using the projective truncation approximation under Lacroix basis.The equal-time spatial spin-spin correlation function (SSCF) is calculated. For the case of spin-unpolarized conduction electrons, it agrees qualitatively with the results from density matrix renormalization group (DMRG). For system with partially spin-polarized conduction electrons, an oscillation in the envelope of SSCF emerges due to the beating of two Friedel oscillations associated to two spin-split Fermi surfaces of conduction electrons. The period is proportional to the inverse of magnetic field $h$. A fitting formula is proposed to perfectly fits the numerical results of SSCF in both the short- and long-range regions. For large enough bath spin polarization, a bump appears in the curve of the integrated SSCF. It marks the boundary between the suppressed Kondo cloud and the polarized bath sites.

Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve Device

AbstractThe recent discovery of 2D ferromagnetic materials provides new opportunities for fabricating 2D ferromagnets‐based spin valve devices and exploring related novel physics. However, up to now, almost all works adopt a spin valve configuration by inserting different types of 2D materials into the gap between two 2D ferromagnetic electrodes as barrier spacer, rather than applying traditional tunneling barrier, such as Al2O3 films grown by atomic layer deposition (ALD), probably attributed to the instability and incompatibility for the widely explored 2D ferromagnets (CrI3, Fe3GeTe2) to the ALD growth process. Here, Cr1−xTe, an air‐stable 2D ferromagnetic metal grown by chemical vapor deposition, show excellent compatibility to ALD process of depositing Al2O3 films. The nonencapsulated Cr1−xTe/Al2O3/Cr1−xTe vertical spin valve devices demonstrate high magnetoresistance ratio of ≈28% and large spin polarization of 0.36 at 2 K. Furthermore, a gradual evolution from tunneling to metallic spin‐valve behavior is found upon decreasing Al2O3 spacer thickness. The work is constructive and illuminating for connecting the 2D ferromagnetic electrodes with traditional tunneling spacers for fundamental research and device applications.

Vacuum barrier induced large spin polarization, giant magnetoresistance, and pure spin photocurrent in ferromagnetic zigzag graphene nanoribbons

Based on first-principle calculations combined with non-equilibrium Green’s function method, we investigate the spin-polarized transport properties of a two-probe device which consists of a vacuum barrier sandwiched between two semi-infinite ferromagnetic zigzag graphene nanoribbons (ZGNRs). It is well known that any vacuum barrier itself is not spin-polarized, and meanwhile, the infinite pristine ferromagnetic ZGNR presents no spin polarization in the transmission function around the Fermi level. However, our computational results indicate that robust large spin polarization is found in the proposed device. More interestingly, giant magnetoresistance up to can be obtained at low bias voltage. Furthermore, the photogalvanic effect-induced fully spin-polarized photocurrent or pure spin photocurrent can be generated in such device by illumination with polarized light, depending on the symmetry of structure. Consequently, our results indicate that vacuum barrier may show interesting spin-polarized transport properties in certain systems and should be taken into consideration in the construction of molecular junctions and spintronic devices.

Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctions.

We report on large spin-filtering effects in epitaxial graphene-based spin valves, strongly enhanced in our specific multilayer case. Our results were obtained by the effective association of chemical vapor deposited (CVD) multilayer graphene with a high quality epitaxial Ni(111) ferromagnetic spin source. We highlight that the Ni(111) spin source electrode crystallinity and metallic state are preserved and stabilized by multilayer graphene CVD growth. Complete nanometric spin valve junctions are fabricated using a local probe indentation process, and spin properties are extracted from the graphene-protected ferromagnetic electrode through the use of a reference Al2O3/Co spin analyzer. Strikingly, spin-transport measurements in these structures give rise to large negative tunnel magneto-resistance TMR = −160%, pointing to a particularly large spin polarization for the Ni(111)/Gr interface PNi/Gr, evaluated up to −98%. We then discuss an emerging physical picture of graphene–ferromagnet systems, sustained both by experimental data and ab initio calculations, intimately combining efficient spin filtering effects arising (i) from the bulk band structure of the graphene layers purifying the extracted spin direction, (ii) from the hybridization effects modulating the amplitude of spin polarized scattering states over the first few graphene layers at the interface, and (iii) from the epitaxial interfacial matching of the graphene layers with the spin-polarized Ni surface selecting well-defined spin polarized channels. Importantly, these main spin selection effects are shown to be either cooperating or competing, explaining why our transport results were not observed before. Overall, this study unveils a path to harness the full potential of low Resitance.Area (RA) graphene interfaces in efficient spin-based devices.

Revealing the origin of activity and selectivity for Ti/g-C3N4 to ammonia production via nitrate reduction electrocatalysis: A first-principles study

Nitrate reduction reaction (NO3RR) is identified as a feasible solution to the current global nitrogen cycle imbalance. Here we explored the NO3RR catalytic performance of transition metal-immobilized single-atom catalysts on g-C3N4 by DFT. Preliminary screening work proved that Ti/g-C3N4 has the lowest limiting potential (UL=−0.3 V) and is the most potential single-atom catalyst for NO3RR. The reaction mechanism analysis of Ti/g-C3N4 also confirmed that it has the selectivity of NO3RR reaction to produce ammonia. This work also proved that the hydrogen evolution reaction does not pose a threat to the ammonia production for Ti/g-C3N4. It is worth mentioning that by analyzing the properties of Ti/g-C3N4 and 2Ti/g-C3N4, we found that the large spin polarization contributed to the excellent activity and selectivity of the NO3RR ammonia production reaction for Ti/g-C3N4. This work not only finds a new NO3RR catalyst (Ti/g-C3N4), but also provides a new idea for designing new NO3RR catalysts.

Spin-polarized supercurrent through the van der Waals Kondo-lattice ferromagnet Fe3GeTe2

In the new van der Waals Kondo-lattice Fe$_3$GeTe$_2$, itinerant ferromagnetism and heavy fermionic behaviour coexist. Both the key properties of such a system namely a spin-polarized Fermi surface and a low Fermi momentum are expected to significantly alter Andreev reflection dominated transport at a contact with a superconducting electrode, and display unconventional proximity-induced superconductivity. We observed interplay between Andreev reflection and Kondo resonance at mesoscopic interfaces between superconducting Nb and Fe$_3$GeTe$_2$. Above the critical temperature ($T_c$) of Nb, the recorded differential conductance ($dI/dV$) spectra display a robust zero-bias anomaly which is described well by a characteristic Fano line shape arising from Kondo resonance. Below $T_c$, the Fano line mixes with Andreev reflection dominated $dI/dV$ leading to a dramatic, unconventional suppression of conductance at zero bias. As a consequence, an analysis of the Andreev reflection spectra within a spin-polarized model yields an anomalously large spin-polarization which is not explained by the density of states of the spin-split bands at the Fermi surface alone. The results open up the possibilities of fascinating interplay between various quantum phenomena that may potentially emerge at the mesoscopic superconducting interfaces involving Kondo lattice systems hosting spin-polarized conduction electrons.

(Invited) Elucidating the Structure and Function of the Electrode-Electrolyte Interface By New Solid State NMR Approaches

The development of high-energy, long-lasting energy storage systems based on rechargeable batteries relies on our ability to control charge storage and degradation processes in the bulk of the electrode materials and at the electrode-electrolyte interface. NMR spectroscopy is exceptionally suited to follow the electrochemical and chemical processes in the bulk of the electrodes and electrolyte, providing atomic scale structural insight into the charge storage mechanisms and ion transport properties. However, interfacial properties, such as the processes governing charge transport between the electrode and the electrolyte, are much harder to study. These processes typically involve thin, heterogeneous and disordered layers that are formed chemically/electrochemically in the battery cell or artificially through coating the electrode material. While NMR is in principle an excellent approach for probing disordered phases, its low sensitivity presents an enormous challenge in the detection of interfacial processes.In this talk I will describe recent approaches to overcome the sensitivity limitation by the use of Dynamic Nuclear Polarization (DNP). In DNP, the large electron spin polarization is used to boost the sensitivity of NMR spectroscopy by orders of magnitude. I will show how we can use this approach to detect the solid-electrolyte interphase (SEI), electrode coatings as well as the electrode’s bulk, with unprecedented sensitivity. Furthermore, I will present new approaches to probe ion transport properties of various interfaces. These allow us to get insight into the functional role of interfaces, which along with the chemical and structural insight, can provide design rules for beneficial interfaces, an essential aspect for developing long-lasting energy storage systems.

RKKY-type in-plane ferromagnetism in layered Mn1/4NbS2 single crystals

Placing the layers of the $3d$ magnetic elements in the van der Waals gap pulls the Nb/Ta-based transition metal dichalcogenides family from a nonmagnetic to a magnetic zone. However, the magnetic spectrum is strongly sensitive to the specific combination of host lattice and type of intercalated magnetic element and thus each combination needs a proper explicit study. In this context, we systematically investigate the magnetization of the Mn-intercalated layered ferromagnet ${\mathrm{Mn}}_{1/4}{\mathrm{NbS}}_{2}$ single crystal. Magnetization measurement revealed paramagnetic to ferromagnetic phase transition at around 105 K and an easy in-plane ($H\ensuremath{\perp}c$) significantly high magnetic anisotropy. The in-plane magnetic anisotropic energy (MAE) evaluated via the noncollinear first-principle approach is $\ensuremath{\sim}\ensuremath{-}600 \ensuremath{\mu}\mathrm{eV}$ per unit cell. The position of the Fermi level in between the spin-up and spin-down Mn states suppresses the positive contribution in the overall MAE, which lifts the overall MAE negative (in plane) with a larger size in ${\mathrm{Mn}}_{1/4}{\mathrm{NbS}}_{2}$. The comprehensive analysis of magnetization isotherms measured in the vicinity of ${T}_{c}$ with magnetic field $H$ applied parallel to the $ab$ plane ($H\ensuremath{\perp}c$) yields the asymptotic critical exponents $\ensuremath{\beta}=0.3251(2)$ and $\ensuremath{\gamma}=1.2(1)$, and $\ensuremath{\delta}=4.691(1)$. These critical exponents fulfill the scaling relation and scaling equation of the magnetic state predicted by the scaling theory. The determined critical exponents agree well with those obtained from the results of the renormalization group theory approach for a three-dimensional Ising system coupled with a long-range interaction between spins decaying as $J(r)\ensuremath{\approx}{r}^{\ensuremath{-}(d+\ensuremath{\sigma})}$ with $\ensuremath{\sigma}$ = 1.84. The Ising-type spin state in ${\mathrm{Mn}}_{1/4}{\mathrm{NbS}}_{2}$ is attributed to the higher size of MAE. Our theoretical analysis shows that indirect exchange interaction between Mn-Mn along the $c$ axis, mediated via spins' polarized conduction electrons of Nb atoms, a Ruderman-Kittel-Kasuya-Yoshida (RKKY) type ferromagnetic interaction, dominates over the direct in-plane Mn-Mn exchange interaction (less favorable due to large ${d}_{\text{Mn-Mn}}\ensuremath{\sim}6.67\phantom{\rule{4pt}{0ex}}\stackrel{\ifmmode \mathring{}\else \r{}\fi{}}{\mathrm{A}}$) and is thus responsible for the macroscopic magnetization in ${\mathrm{Mn}}_{1/4}{\mathrm{NbS}}_{2}$. The RKKY-type ferromagnetic interaction in ${\mathrm{Mn}}_{1/4}{\mathrm{NbS}}_{2}$ arises due to the large spin polarization of the conduction electrons associated with the Nb atoms at the Fermi energy and existence of unoccupied Mn $3d$ states well above the Fermi level.

Chirality-induced spin filtering in pseudo Jahn-Teller molecules

Chirality-induced spin selectivity (CISS) refers to an ability to induce a spin polarization of an electron transmitted through chiral materials. An important experimental observation is that incredibly large spin polarization is realized at room temperature even for organic molecules that have weak spin-orbit coupling (SOC), although SOC is the only interaction that can manipulate the electrons' spins in the setups. Therefore the mechanism of the CISS needs to be constructed in a way insensitive to or enhancing the magnitude of the SOC strength. In this paper, we describe a theoretical study of CISS with a model chiral molecule that belongs to the point group ${\mathrm{C}}_{3}$. In this molecule, electronic translational and rotational degrees of freedom for an injected electron are coupled to one another via the nuclear vibrational mode with a pseudo Jahn-Teller effect. By properly taking the molecular symmetry as well as the time-reversal symmetry into account and classifying the molecular ground states by their angular- and spin-momentum quantum numbers, we show that the chiral molecule can act as an efficient spin filter. The efficiency of this spin filtering can be nearly independent of the SOC strength in this model, while it well exceeds the spin polarization relying solely on the SOC. The nuclear vibrations turned out to have the role of not only mediating the translation-rotation coupling, but also enhancing the spin-filtering efficiency.

A Chirality-Based Quantum Leap.

There is increasing interest in the study of chiral degrees of freedom occurring in matter and in electromagnetic fields. Opportunities in quantum sciences will likely exploit two main areas that are the focus of this Review: (1) recent observations of the chiral-induced spin selectivity (CISS) effect in chiral molecules and engineered nanomaterials and (2) rapidly evolving nanophotonic strategies designed to amplify chiral light–matter interactions. On the one hand, the CISS effect underpins the observation that charge transport through nanoscopic chiral structures favors a particular electronic spin orientation, resulting in large room-temperature spin polarizations. Observations of the CISS effect suggest opportunities for spin control and for the design and fabrication of room-temperature quantum devices from the bottom up, with atomic-scale precision and molecular modularity. On the other hand, chiral–optical effects that depend on both spin- and orbital-angular momentum of photons could offer key advantages in all-optical and quantum information technologies. In particular, amplification of these chiral light–matter interactions using rationally designed plasmonic and dielectric nanomaterials provide approaches to manipulate light intensity, polarization, and phase in confined nanoscale geometries. Any technology that relies on optimal charge transport, or optical control and readout, including quantum devices for logic, sensing, and storage, may benefit from chiral quantum properties. These properties can be theoretically and experimentally investigated from a quantum information perspective, which has not yet been fully developed. There are uncharted implications for the quantum sciences once chiral couplings can be engineered to control the storage, transduction, and manipulation of quantum information. This forward-looking Review provides a survey of the experimental and theoretical fundamentals of chiral-influenced quantum effects and presents a vision for their possible future roles in enabling room-temperature quantum technologies.

Interface-Induced Conservation of Momentum Leads to Chiral-Induced Spin Selectivity.

We study the nonequilibrium dynamics of electron transmission from a straight waveguide to a helix with spin-orbit coupling. Transmission is found to be spin-selective and can lead to large spin polarizations of the itinerant electrons. The degree of spin selectivity depends on the width of the interface region, and no polarization is found for single-point couplings. We show that this is due to momentum conservation conditions arising from extended interfaces. We therefore identify interface structure and conservation of momentum as crucial ingredients for chiral-induced spin selectivity, and we confirm that this mechanism is robust against static disorder.

Atomic disorder and Berry phase driven anomalous Hall effect in a Co2FeAl Heusler compound

${\mathrm{Co}}_{2}$-based Heusler compounds are promising materials for spintronics applications due to their high Curie temperature, large spin polarization, large magnetization density, and exotic transport properties. In the present paper, we report the anomalous Hall effect (AHE) in a polycrystalline ${\mathrm{Co}}_{2}\mathrm{FeAl}$ Heusler compound using combined experimental and theoretical studies. The Rietveld analysis of high-resolution synchrotron x-ray diffraction data reveals a large degree $(\ensuremath{\sim}50%)$ of antisite disorder between Fe and Al atoms. The analysis of anomalous transport data provides the experimental anomalous Hall conductivity (AHC) about 227 S/cm at 2 K with an intrinsic contribution of 155 S/cm, which has nearly constant variation with temperature. The detailed scaling analysis of anomalous Hall resistivity suggests that the AHE in ${\mathrm{Co}}_{2}\mathrm{FeAl}$ is governed by the Berry phase driven intrinsic mechanism. Our theoretical calculations reveal that the disorder present in the ${\mathrm{Co}}_{2}\mathrm{FeAl}$ compound enhances the Berry curvature induced intrinsic AHC.

Designing a ferrimagnetic-ferroelastic multiferroic semiconductor in FeMoClO4 nanosheets via element substitution.

Exploring two-dimensional multiferroic semiconductors, combined with ferro-/ferrimagnetism and ferroelasticity as well as large spin polarization around the valence band maximum (VBM) and conduction band minimum (CBM), is highly desirable but remains a challenging task. Here, via first-principles calculations, we predict such a material based on the square phase FeMoClO4 nanosheet, which is experimentally accessible by exfoliating its layered bulk. Pristine FeMoClO4 nanosheets are a weak antiferromagnet with zero spin polarization. After substituting nonmagnetic Mo with magnetic Mn, the resulting FeMnClO4 nanosheet becomes ferrimagnetic with magnetic ordering temperature significantly enhanced from 14 to 127 K. Besides, the FeMnClO4 nanosheet is a half semiconductor with its VBM and CBM 100% spin-polarized in the same spin direction. Interestingly, the initial square lattice is distorted into a rectangular one, inducing an in-plane ferroelasticity in the FeMnClO4 nanosheet with a switching barrier of 27 meV per atom. Moreover, under ferroelastic transition, the orientation of the magnetic easy axis can be reversibly rotated by 90°, indicating a strong magnetoelastic coupling.

Intrinsic spin, valley and piezoelectric polarizations in room-temperature ferrovalley Janus TiXY (XY = SCl and SeBr) monolayers.

Two-dimensional room-temperature Janus ferrovalley semiconductors with large spin, valley and piezoelectric polarizations provide fertile platforms for designing multifunctional nanodevices. Little research has been reported to date on such materials. Here, using first-principles calculations, we predict two dynamically stable Janus titanium chalcohalide (TiSCl and TiSeBr) monolayers, which are excellent piezoelectric ferrovalley semiconductors with in-plane magnetization and high magnetic transition temperatures (738 and 884 K). When an extrinsic magnetic field is used to force the magnetization along the out-of-plane direction, a large valley polarization (64 and 146 meV) can be generated in the highest valence band with a large spin-orbit coupling by the breaking of time-reversal and space-inversion symmetry, which can be further clarified by a two-band k·p model. This robust valley-contrasting physics characterized by the valley-dependent Berry curvature leads to the anomalous valley Hall effect. It can be observed by suitable hole doping or light irradiation under an in-plane electric field. Besides, we find that the missing mirror symmetry results in giant out-of-plane piezoelectric polarization (2.05 and 2.04 pm V-1). These outstanding properties give the Janus TiSCl and TiSeBr monolayers potential for a wide variety of applications in nanoelectronics, spintronics, valleytronics, piezoelectrics and other demanding areas.

Elucidating the effect of Vx doped LaFe1−xO3 for advanced optical, spintronic, and thermoelectric devices

AbstractIn this theoretical work, we perform an investigation to study the influence of V doping in LaFeO3 (LFO). For V doping, the opted Fe site shows remarkable modifications in the inherited attributes of pristine LFO. We use formation energies and optimizations to explore the ground state structural stability. Electronic properties of stable structures reveal large spin polarization effects with spin‐up (metallic) and spin‐down (semiconducting) configurations. We observe the highest ferromagnetism for V‐25% doping which is a suitable candidate for application in magnetic tunnel junctions. Optical analysis reveals that the studied materials are highly transparent under incident light. All thermoelectric results suggest that the compounds can be categorized as p‐type doping. The thermoelectric parameters predict that the present compounds have beneficial thermoelectric industrial applications, especially V0.25‐LFO and V0.5‐LFO. We expect that these compounds are suitable functional materials for novel magnetic or spintronic devices and as transparent conducting materials.