Large Nonsaturating Magnetoresistance Research Articles

Magnetic and transport properties of Fe-doped Weyl semimetal Co3Sn2S2

Ferromagnetic Weyl semimetal Co3Sn2S2 has recently attracted a lot of interest on account of its large non-saturating magnetoresistance and the high carrier mobility common to topological semimetals. Moreover, the material also provides a platform for studying the interplay between the intrinsic magnetism and topological band structures, which generates a significant anomalous Hall effect. Chemical doping is the usual approach to adjust materials’ properties, and it can lead to fascinating results. Here, we present the influence of Fe-doping on the magnetic and transport properties of polycrystalline Co3Sn2S2. The Fe-doping suppresses the sample’s magnetic order, increases the electrical resistivity, results in a skew-scattering contribution to the anomalous Hall effect and Fe impurities cause the Kondo effect. In addition, we report on the impact of Fe-doping on the magnetoresistance of Co3Sn2S2, where Fe-doping leads to a dramatic decline in magnetoresistance. Furthermore, the hysteresis behavior in the low magnetic field region, detected previously in nanoflake samples only, is observed in both pure and Fe-doped Co3Sn2S2 bulk samples. Our findings serve as a reference and source of inspiration for future chemical doping research on topological semimetals.

Large Transverse and Longitudinal Magneto‐Thermoelectric Effect in Polycrystalline Nodal‐Line Semimetal Mg3Bi2

Topological semimetals provide new opportunities for exploring novel thermoelectric phenomena, owing to their exotic and nontrivial electronic structure topology around the Fermi surface. Herein, the discovery of large transverse and longitudinal magneto-thermoelectric (MTE) effects in Mg3 Bi2 is reported and predicted to be a type-II nodal-line semimetal in the absence of spin-orbit coupling (SOC). The maximum transverse power factor is 2182 μW m-1 K-2 at 13.5 K and 6 Tesla. The longitudinal power factor reaches up to 3043 μW m-1 K-2 , which is 20 times higher than that in a zero-strength magnetic field and is also comparable to state-of-the-art MTE materials. By compensating the Mg loss in Mg-rich conditions for tuning the carrier concentration close to intrinsic state, the sample fabricated in this study exhibits a large linear non-saturating magnetoresistance of 940% under a field of 14 Tesla. Using density functional calculations, the authors attribute the underlying mechanism to the parent linear-dispersed nodal-line electronic structure without SOC and the anisotropic Fermi surface shape with SOC, highlighting the essential role of high carrier mobility and open electron orbits in the moment space. This work offers a new avenue toward highly efficient MTE materials through defect engineering in polycrystalline topological semimetals.

Water-assisted controllable growth of atomically thin WTe2 nanoflakes by chemical vapor deposition based on precursor design and substrate engineering strategies

WTe2 nanostructures have intrigued much attention due to their unique properties, such as large non-saturating magnetoresistance, quantum spin Hall effect and topological surface state. However, the controllable growth of large-area atomically thin WTe2 nanostructures remains a significant challenge. In the present work, we demonstrate the controllable synthesis of 1T′ atomically thin WTe2 nanoflakes (NFs) by water-assisted ambient pressure chemical vapor deposition method based on precursor design and substrate engineering strategies. The introduction of water during the growth process can generate a new synthesized route by reacting with WO3 to form intermediate volatile metal oxyhydroxide. Using WO3 foil as the growth precursor can drastically enhance the uniformity of as-prepared large-area 1T′ WTe2 NFs compared to WO3 powders. Moreover, highly oriented WTe2 NFs with distinct orientations can be obtained by using a-plane and c-plane sapphire substrates, respectively. Corresponding precursor design and substrate engineering strategies are expected to be applicable to other low dimensional transition metal dichalcogenides, which are crucial for the design of novel electronic and optoelectronic devices.

Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi

A large non-saturating magnetoresistance has been observed in several nonmagnetic topological Weyl semi-metals with high mobility of charge carriers at the Fermi energy. However, ferromagnetic systems rarely display a large magnetoresistance because of localized electrons in heavy d bands with a low Fermi velocity. Here, we report a large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi. MnBi, unlike conventional ferromagnets, exhibits a large linear non-saturating magnetoresistance of 5000% under a pulsed field of 70 T. The electrons and holes’ mobilities are both 5000 cm2V−1s−1 at 2 K, which are one of the highest for ferromagnetic materials. These phenomena are due to the spin-polarised Bi 6p band’s sharp dispersion with a small effective mass. Our study provides an approach to achieve high mobility in ferromagnetic systems with a high Curie temperature, which is advantageous for topological spintronics.

Terahertz Photodetection with Type‐II Dirac Fermions in Transition‐Metal Ditellurides and Their Heterostructures

Transition‐metal dichalcogenides PtTe2, PdTe2, and NiTe2 deserve particular attention, due to the presence of type‐II Dirac fermions. As a matter of fact, tilted Dirac cones afford a suitable platform for optoelectronics of dissipation‐less carrier‐transport, favored by their ultrahigh carrier mobility, and large nonsaturating magnetoresistance. Herein, it is shown that PtTe2, PdTe2, and NiTe2 display high‐speed terahertz (THz) detection capability at room temperature, which originates from their peculiar band structure with topologically protected electronic states. Furthermore, photodetectors based on their heterostructures are able to suppress dark current with high‐performance detection of THz light. Furthermore, these crystals are stable in air and they can be easily exfoliated in nanosheets by liquid‐phase exfoliation, due to the weak interlayer van der Waals bonds. The obtained results clearly establish that the type‐II Dirac semimetals based on transition‐metal ditellurides have immense research potential for addressing application‐oriented issues for remote sensing and telecommunications.

Extremely large linear magnetoresistance in antimony crystal

In this article, we report the observation of extremely large non-saturating linear magnetoresistance (MR) in antimony (Sb) crystal. An extremely large magnetoresistance of 43 000% at 2 K and large unsaturating MR ∼70% at room temperature is observed at the magnetic field of 9 T. Hall measurements reveal a very high mobility ∼3.8 × 104 cm2 V s−1 of charge carriers and strong temperature dependence of carrier concentration and mobility. The respective scaling of MR and crossover field (B c ) from quadratic to linear MR with mobility and inverse of mobility describes the classical origin of large linear MR in this crystal as suggested by Parish and Littlewood model for disordered systems.

Experimental and theoretical study of the correlated compound YbCdSn: Evidence for large magnetoresistance and mass enhancement

The unusual features of topological semimetals arise from its nontrivial band structure. The impact of strong electron correlations on the topological states remains largely unexplored in real materials. Here, we report the magnetotransport properties of YbCdSn single crystals. We found two fundamental experimental evidences of electron correlations through magnetic susceptibility and specific heat. The electron correlations in this compound lead to an intermediate valence state and enhance the effective mass of the charge carriers. This correlated state exhibits large nonsaturating magnetoresistance, low carrier density, magnetic field induced metal-semiconductor-like crossover and a plateau in resistivity at low temperatures. This compound also shows a cusp-like magnetoconductivity at low magnetic field which indicates the presence of weak antilocalization effect. Our band structure calculations of Yb$^{2+}$ state predict YbCdSn to be a topological nodal-line semimetal.

Enhanced Mobility and Large Linear Nonsaturating Magnetoresistance in the Magnetically Ordered States of TmNiC_{2}.

We have studied the magnetic, magnetotransport, and galvanomagnetic properties of TmNiC_{2}. We find that the antiferromagnetic and field induced metamagnetic and ferromagnetic orderings do not suppress the charge density wave. The persistence of Fermi surface pockets, open as a result of imperfect nesting accompanying the Peierls transition, results in an electronic carriers mobility of the order of 4×10^{3} cm^{2} V^{-1} s^{-1} in ferromagnetic state, without any signatures for a significant deterioration of nesting properties. This is independently evidenced by high, nonsaturating linear magnetoresistance reaching 440% at T=2 K and an analysis of the Hall conductivity. We thus demonstrate that, the coexistence of charge density wave and magnetism provides an alternative route to maintain high electronic mobility in the magnetically ordered state.

Synthesis of tungsten ditelluride thin films and highly crystalline nanobelts from pre-deposited reactants

Tungsten ditelluride (WTe2) is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and promise as a type-II Weyl semimetal. The majority of works on WTe2 have relied on mechanically exfoliated flakes from chemical vapour transport (CVT)-grown crystals for their investigations. While producing high-quality samples, this method is hindered by several disadvantages including long synthesis time, high-temperature annealing and an inherent lack of scalability. In this work, a synthesis method is demonstrated that allows the production of large-area polycrystalline films of WTe2. This is achieved by the reaction of pre-deposited films of W and Te at a relatively low temperature of 550 °C. Sputter X-ray photoelectron spectroscopy reveals the rapid but self-limiting nature of the oxidation of these WTe2 films in ambient conditions. The WTe2 films are composed of areas of micrometre-sized nanobelts that can be isolated and offer potential as an alternative to CVT-grown samples. These nanobelts are highly crystalline with low defect densities indicated by transmission electron microscopy and show promising initial electrical results.

Unique Dirac and triple point fermiology in simple transition metals and their binary alloys

Noble metal surfaces (Au, Ag and Cu etc.) have been extensively studied for the Shockley type surface states (SSs). Very recently, some of these Shockley SSs have been understood from the topological consideration, with the knowledge of global properties of electronic structure. In this letter, we show the existence of Dirac like excitations in the elemental noble metal Ru, Re and Os based on symmetry analysis and first principle calculations. The unique SSs driven Fermi arcs have been investigated in details for these metals. Our calculated SSs and Fermi arcs are consistent with the previous transport and photo-emission results. We attribute these Dirac excitation mediated Fermi arc topology to be the possible reasons behind several existing transport anomalies, such as large non-saturating magneto resistance, anomalous Nernst electromotive force and its giant oscillations, magnetic breakdown etc. We further show that the Dirac like excitations in these elemental metal can further be tuned to three component Fermionic excitations, using symmetry allowed alloy mechanism.

Giant magnetoresistance in gapless HgCdTe with Kane fermions

We report the observation of an extremely large non-saturating magnetoresistance (MR) exceeding one million per cent at a magnetic field of 11 tesla in gapless HgCdTe. The samples exhibit a maximum of MR at a temperature of corresponding to the semiconductor-semimetal transition, where a linear carrier dispersion appears. We attribute the observed giant MR to an opening of the gap due to Landau quantization of the Kane fermions strengthened by the absence of localization in such a purely gapless system at zero magnetic field.

Synthesis of WTe2 Nanowires with Increased Electron Scattering.

Tungsten ditelluride (WTe2) has many interesting properties such as its extremely large nonsaturating magnetoresistance and quantum spin Hall state in the monolayer limit. The anisotropic crystal structure of WTe2 can allow for isolation of particular crystal directions to study the predicted Weyl states or crystal-symmetry-dependent magnetoresistance when studied at limited dimensions. In particular, the recent demonstration of superconductivity in WTe2 monolayer suggests that realizing nanowire geometry for WTe2 may be important to investigate potential Majorana zero modes predicted in one-dimensional topological superconductors. In this work, we demonstrate a large-yield, low-temperature synthesis of WTe2 nanowires, an approximate one-dimensional system, by converting WO3 nanowires via tellurization. The nanowires are single crystalline and have a higher resistivity than WTe2 exfoliated flakes with similar thickness. The increased resistivity is attributed to increased scattering from imperfect surfaces and higher surface-to-volume ratios of the WTe2 nanowires. We demonstrate that the synthesis method is generalizable to other transition-metal dichalcogenides, laying the foundation for further study of this class of materials in the one-dimensional limit.

Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2.

Since the discovery of extremely large nonsaturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large nonsaturating MR through in situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic doping approach, we observed a nonmonotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe2 film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature-dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the nonmagnetic materials with electron-hole pockets.

Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films

Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up new possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis.

Magnetoresistance from Fermi surface topology

Extremely large non-saturating magnetoresistance has recently been reported for a large number of both topologically trivial and non-trivial materials. Different mechanisms have been proposed to explain the observed magnetotransport properties, yet without arriving to definitive conclusions or portraying a global picture. In this work, we investigate the transverse magnetoresistance of materials by combining the Fermi surfaces calculated from first principles with the Boltzmann transport theory approach relying on the semiclassical model and the relaxation time approximation. We first consider a series of simple model Fermi surfaces to provide a didactic introduction into the charge-carrier compensation and open-orbit mechanisms leading to non-saturating magnetoresistance. We then address in detail magnetotransport in three representative materials: (i) copper, a prototypical nearly free-electron metal characterized by the open Fermi surface that results in an intricate angular magnetoresistance, (ii) bismuth, a topologically trivial semimetal in which very large magnetoresistance is known to result from charge-carrier compensation, and (iii) tungsten diphosphide WP2, a recently discovered type-II Weyl semimetal that holds the record of magnetoresistance in compounds. In all three cases our calculations show excellent agreement with both the field dependence of magnetoresistance and its anisotropy measured at low temperatures. Furthermore, the calculations allow for a full interpretation of the observed features in terms of the Fermi surface topology. These results will help addressing a number of outstanding questions, such as the role of the topological phase in the pronounced large non-saturating magnetoresistance observed in topological materials.

Nonsaturating large magnetoresistance in semimetals

The rapidly expanding class of quantum materials known as topological semimetals (TSMs) displays unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. So far, many possible sources of extraordinarily large nonsaturating magnetoresistance have been proposed. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility (χ), the tangent of the Hall angle ([Formula: see text]), along with magnetoresistance in four different nonmagnetic semimetals with high mobilities, NbP, TaP, NbSb2, and TaSb2, all of which exhibit nonsaturating large magnetoresistance (MR). We find that the distinctly different temperature dependences, [Formula: see text], and the values of [Formula: see text] in phosphides and antimonates serve as empirical criteria to sort the MR from different origins: NbP and TaP are uncompensated semimetals with linear dispersion, in which the nonsaturating magnetoresistance arises due to guiding center motion, while NbSb2 and TaSb2 are compensated semimetals, with a magnetoresistance emerging from nearly perfect charge compensation of two quadratic bands. Our results illustrate how a combination of magnetotransport and susceptibility measurements may be used to categorize the increasingly ubiquitous nonsaturating large magnetoresistance in TSMs.

Fermi surface and carrier compensation of pyrite-type PtBi2 revealed by quantum oscillations

Large non-saturating magnetoresistance has been observed in various materials and electron-hole compensation has been regarded as one of the main mechanisms. Here we present a detailed study of the angle-dependent Shubnikov -de Haas effect on large magnetoresistance material pyrite-type PtBi$_{2}$, which allows us to experimentally reconstruct its Fermi-surface structure and extract the physical properties of each pocket. We find its Fermi surface contains four types of pockets in the Brillouin zone: three ellipsoid-like hole pockets $\alpha$ with C$_4$ symmetry located on the edges (M points), one intricate electron pocket $\beta$ merged from four ellipsoids along [111] located on the corners (R points), two smooth and cambered octahedrons $\gamma$ (electron) and $\delta$ (hole) on the center ($\Gamma$ point). The deduced carrier densities of electrons and holes from the volume of pockets prove carrier compensation. This compensation at low temperatures is also supported by fitting the field dependence of Hall and magnetoresistance at different temperatures. We conclude that the compensation is the main mechanism for the large non-saturating magnetoresistance in pyrite-type PtBi$_{2}$. We found the hole pockets {\alpha} may contribute major mobility because of their light masses and anisotropy to relatively avoid large-angle scattering at low temperature. This may be a common feature of semimetals with large magnetoresistance. The found sub-quadratic magnetoresistance in high field is probably due to field-dependent mobilities, another feature of semimetals under high magnetic fields.

Extremely large magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi2

The magnetoresistance is the magnetic field induced change of electrical resistivity of a material. Recent studies have revealed extremely large magnetoresistance in several non-magnetic semimetals, which has been explained on the basis of either electron-hole compensation or the Fermi surface topology, or the combination of both. Here, we present a single crystal study on MoSi$_2$, which exhibits extremely large magnetoresistance, approaching almost 10$^7$ % at 2 K and 14 T magnetic field. It is found that the electron-hole compensation level in MoSi$_2$ evolves with magnetic field, which is resulted from strong Zeeman effect, and found beneficial in boosting the large non-saturating magnetoresistance. The non-trivial Berry phase in the de Haas-van Alphen oscillations and the moderate suppression of backward scattering of the charge carriers lend support for the topological nature of this semimetal. The ultra-large carrier mobility of the topologically protected charge carriers reinforces the magnetoresistance of MoSi2 to an unprecedented large value.

Significantly enhanced magnetoresistance in monolayer WTe2via heterojunction engineering: a first-principles study.

The large non-saturating magnetoresistance (MR) of bulk WTe2 is known to be greatly reduced in thin films with decreasing thickness. In this study, based on first-principles calculations, we demonstrate that 2D WTe2 bonded to graphene, through a WTe2/graphene van der Waals (vdW) heterojunction, can exhibit a significantly enhanced MR, which can be even larger than that of bulk WTe2. Moreover, the MR shows a strong stacking-orientation-dependent behavior, which facilitates a tunable MR effect. Our findings illustrate a new route to enhancing the MR of WTe2 and other 2D semimetals via heterojunction engineering, which is useful for a range of applications in information technology.

Magnetotransport properties of MoP2

We report magnetotransport and de Haas-van Alphen (dHvA) effect studies on MoP$_2$ single crystals, predicted to be type-2 Weyl semimetal with four pairs of robust Weyl points located below the Fermi level and long Fermi arcs. The temperature dependence of resistivity shows a peak before saturation, which does not move with magnetic field. Large nonsaturating magnetoresistance (MR) was observed, and the field dependence of MR exhibits a crossover from semicalssical weak-field $B^2$ dependence to the high-field linear-field dependence, indicating the presence of Dirac linear energy dispersion. In addition, systematic violation of Kohler's rule was observed, consistent with multiband electronic transport. Strong spin-orbit coupling (SOC) splitting has an effect on dHvA measurements whereas the angular-dependent dHvA orbit frequencies agree well with the calculated Fermi surface. The cyclotron effective mass $\sim$ 1.6$m_e$ indicates the bands might be trivial, possibly since the Weyl points are located below the Fermi level. Interestingly, quasi-two dimensional(2D) band structure is observed even though the crystal structure of MoP$_2$ is not layered.