Abstract
Extremely large non-saturating magnetoresistance has recently been reported for a large number of both topologically trivial and non-trivial materials. Different mechanisms have been proposed to explain the observed magnetotransport properties, yet without arriving to definitive conclusions or portraying a global picture. In this work, we investigate the transverse magnetoresistance of materials by combining the Fermi surfaces calculated from first principles with the Boltzmann transport theory approach relying on the semiclassical model and the relaxation time approximation. We first consider a series of simple model Fermi surfaces to provide a didactic introduction into the charge-carrier compensation and open-orbit mechanisms leading to non-saturating magnetoresistance. We then address in detail magnetotransport in three representative materials: (i) copper, a prototypical nearly free-electron metal characterized by the open Fermi surface that results in an intricate angular magnetoresistance, (ii) bismuth, a topologically trivial semimetal in which very large magnetoresistance is known to result from charge-carrier compensation, and (iii) tungsten diphosphide WP2, a recently discovered type-II Weyl semimetal that holds the record of magnetoresistance in compounds. In all three cases our calculations show excellent agreement with both the field dependence of magnetoresistance and its anisotropy measured at low temperatures. Furthermore, the calculations allow for a full interpretation of the observed features in terms of the Fermi surface topology. These results will help addressing a number of outstanding questions, such as the role of the topological phase in the pronounced large non-saturating magnetoresistance observed in topological materials.
Highlights
Magnetoresistance (MR) is the change of electrical resistance in an applied magnetic field
We present a systematic study of transverse MR by using the Botlzmann transport theory [40,41] within the relaxation time approximation
In all cases the calculated MR as a function magnetic field orientation and strength show very good agreement with available experimental data even assuming constant relaxation times that do not depend on momentum and band index. For these seemingly unrelated materials, we find that the topology of the Fermi surface plays a crucial role in the magnetotransport properties, and our calculations allow for a complete interpretation of the observed features
Summary
Magnetoresistance (MR) is the change of electrical resistance in an applied magnetic field. Large MR effects at low temperature, distinct from giant and colossal MR, have been reported for numerous materials many of which host topological electronic phases Dirac semimetals such as graphene [8,9], Cd3As2 [10,11,12], and Weyl semimetals belonging to the TaAs family [13] show linear field-dependent MR. In all cases the calculated MR as a function magnetic field orientation and strength show very good agreement with available experimental data even assuming constant relaxation times that do not depend on momentum and band index For these seemingly unrelated materials, we find that the topology of the Fermi surface plays a crucial role in the magnetotransport properties, and our calculations allow for a complete interpretation of the observed features.
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