Fabricated Josephson Junctions Research Articles

Co-doped BaFe2As2 Josephson junction fabricated with a focused helium ion beam

Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices, therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance. In this work, we have successfully fabricated Josephson junctions from Co-doped BaFe2As2 thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam (FHIB). The electrical transport properties were investigated for junctions fabricated with various He+ irradiation doses. The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K, and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He+ irradiation. Significant J c suppression by more than two orders of magnitude can be achieved by increasing the He+ irradiation dose, which is advantageous for the realization of low noise ion pnictide thin film devices. Clear Shapiro steps are observed under 10 GHz microwave irradiation. The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe2As2 Josephson junction with high reproducibility using the FHIB technique, laying the foundation for future investigating the mechanism of iron-based superconductors, and also the further implementation in various superconducting electronic devices.

The effect of under and over develop time in Josephson junction fabrication process using electron beam lithography

In the 1960s, the physicist Brian Josephson introduced the concept of Josephson tunnel junctions, which involve the tunneling of Cooper pairs across a barrier between superconducting electrodes. The typical methods of fabricating Josephson junction such as Dolan bridge and cross-type technique require specialized equipment for angle deposition. In this work, we present Josephson junction fabrication process using electron beam lithography that eliminates the need for angle deposition. The dose test was performed to optimize the right dose and we also explored various develop time. We observed that for PMMA A9 film with thickness 1.3 μm, the electron dose 280 μC/cm2 and develop time between 1.30 – 2.00 minutes produces clear pattern with sharp features. The effect of under and over develop time is shown such that there are resist residue left on the substrate after lift-off process and the longer develop time created an undercut.

Anisotropic proximity–induced superconductivity and edge supercurrent in Kagome metal, K 1− x V 3 Sb 5

Materials with Kagome nets are of particular importance for their potential combination of strong correlation, exotic magnetism, and electronic topology. KV 3 Sb 5 was discovered to be a layered topological metal with a Kagome net of vanadium. Here, we fabricated Josephson Junctions of K 1− x V 3 Sb 5 and induced superconductivity over long junction lengths. Through magnetoresistance and current versus phase measurements, we observed a magnetic field sweeping direction–dependent magnetoresistance and an anisotropic interference pattern with a Fraunhofer pattern for in-plane magnetic field but a suppression of critical current for out-of-plane magnetic field. These results indicate an anisotropic internal magnetic field in K 1− x V 3 Sb 5 that influences the superconducting coupling in the junction, possibly giving rise to spin-triplet superconductivity. In addition, the observation of long-lived fast oscillations shows evidence of spatially localized conducting channels arising from edge states. These observations pave the way for studying unconventional superconductivity and Josephson device based on Kagome metals with electron correlation and topology.

Visualizing heterogeneous dipole fields by terahertz light coupling in individual nano-junctions

The challenge underlying superconducting quantum computing is to remove materials bottleneck for highly coherent quantum devices. The nonuniformity and complex structural components in the underlying quantum circuits often lead to local electric field concentration, charge scattering, dissipation and ultimately decoherence. Here we visualize interface dipole heterogeneous distribution of individual Al/AlOx/Al junctions employed in transmon qubits by broadband terahertz scanning near-field microscopy that enables the non-destructive and contactless identification of defective boundaries in nano-junctions at an extremely precise nanoscale level. Our THz nano-imaging tool reveals an asymmetry across the junction in electromagnetic wave-junction coupling response that manifests as hot (high intensity) vs cold (low intensity) spots in the spatial electrical field structures and correlates with defected boundaries from the multi-angle deposition processes in Josephson junction fabrication inside qubit devices. The demonstrated local electromagnetic scattering method offers high sensitivity, allowing for reliable device defect detection in the pursuit of improved quantum circuit fabrication for ultimately optimizing coherence times.

High density fabrication process for single flux quantum circuits

We implemented, optimized, and fully tested a superconducting Josephson junction fabrication process over multiple runs tailored for integrated digital circuits that are used for control and readout of superconducting qubits operating at millikelvin temperatures. This process was optimized for highly energy efficient rapid single flux quantum (ERSFQ) circuits with critical currents reduced by a factor of ∼10 as compared to those operated at 4.2 K. Specifically, it implemented Josephson junctions with 10 μA unit critical current fabricated with 10 μA/μm2 critical current density. In order to circumvent the substantial size increase in the SFQ circuit inductors, we employed an NbN high kinetic inductance layer with 8.5 pH/sq sheet inductance. Similarly, to maintain the small size of junction resistive shunts, we used a non-superconducting PdAu alloy with 4.0 Ω/sq sheet resistance. For integration with quantum circuits in a multi-chip module, 5 and 10 μm height bump processes were also optimized. To keep the fabrication process in check, we developed and thoroughly tested a comprehensive process control monitor chip set.

Improving Josephson junction reproducibility for superconducting quantum circuits: junction area fluctuation

Josephson superconducting qubits and parametric amplifiers are prominent examples of superconducting quantum circuits that have shown rapid progress in recent years. As such devices become more complex, the requirements for reproducibility of their electrical properties across a chip are being tightened. Critical current of the Josephson junction Ic is the essential electrical parameter in a chip. So, its variation is to be minimized. According to the Ambegaokar–Baratoff formula, critical current is related to normal-state resistance, which can be measured at room temperature. In this study, we focused on the dominant source of non-uniformity for the Josephson junction critical current–junction area variation. We optimized Josephson junction fabrication process and demonstrated resistance variation of 9.8–4.4% and 4.8–2.3% across 22 × 22 mm2 and 5 × 10 mm2 chip areas, respectively. For a wide range of junction areas from 0.008 to 0.12 μm2, we ensure a small linewidth standard deviation of 4 nm measured over 4500 junctions with linear dimensions from 80 to 680 nm. We found that the dominate source of junction area variation limiting {mathrm{I}}_{mathrm{c}} reproducibility is the imperfection of the evaporation system. The developed fabrication process was tested on superconducting highly coherent transmon qubits (T1 > 100 μs) and a nonlinear asymmetric inductive element parametric amplifier.

Interface shape dependent interference patterns of NbSe2 heterostructure Josephson junctions

The superconducting critical current oscillations as a function of magnetic field were previously observed in heterostructure Josephson junctions fabricated by twisting and stacking superconducting van der Waals materials. The interference patterns, however, are often distorted. Here, we report a model for understanding the shape of oscillation patterns in heterostructure Josephson junctions. To this end, we fabricated Josephson junctions by stacking two bulk superconducting $2H\text{\ensuremath{-}}{\mathrm{NbSe}}_{2}$ flakes on top of each other. We were able to control the junction fabricated to be either diffusive or clean by varying the temperature during the stacking process. The measured magnetic field dependence of the critical current exhibits either a Gaussian decay or a clear oscillatory pattern with maxima and minima. We identify the shape of the interference patterns not only depends on the type of junction; they are also strongly dictated by field orientation and interface geometry. This is a consequences of the fact that heterostructure junctions often have inhomogeneous widths that extend along the field direction. We calculate the expected interference pattern from the junction geometry by applying our model and find excellent agreement to our experimental data.

Anomalous critical supercurrent and half-integer Shapiro steps based on Josephson junction of topological insulator nanowires

Topological insulator-based Josephson junction, as a candidate device for searching for Majorana zero energy modes, has attracted much attention. One of the key issues along this direction is to fabricate Josephson junctions with high-quality interfaces, hoping to searching for 4π-period current-phase relation in topologically non-trivial Josephson junction. In this work, the Josephson junctions based on three-dimensional topological insulator nanowires Bi<sub>2</sub>Te<sub>3</sub> and Bi<sub>2</sub>(Se<sub><i>x</i></sub>Te<sub>1–<i>x</i></sub>)<sub>3</sub> are fabricated to study their superconducting proximity effects, multiple Andreev reflections, and current-phase relations. A number of interesting phenomena are observed, including the anomalous enhancement in junctions’ critical supercurrent with magnetic field, and the appearance of half-integer Shapiro steps in the ac Josephson effect. And, we discuss the possible origins of the observed anomalous behaviors in general, and their relation with the ferromagnetic layer of TiTe alloy formed at the interface between the topological insulator nanowires and the Ti buffer layer of the metallic electrodes, in particular. We provide the experimental evidence for the formation of a ferromagnetic TiTe alloy layer at the interface of our device. And, we believe that the formation of such a layer in our Josephson device breaks the time reversal symmetry, leading to the observed anomalous enhancement of the critical supercurrent with magnetic field, as well as the appearance of half-integer Shapiro steps. Our results suggest that to study the topologically non-trivial behaviors such as 4π-period current-phase relation, one still needs to improve the interface quality of the superconductor-normal metal-superconductor type of Josephson junction devices.

High-Temperature Superconducting YBa2Cu3O7 – δ Josephson Junction Fabricated with a Focused Helium Ion Beam

As a newly developed method for fabricating Josephson junctions, a focused helium ion beam has the advantage of producing reliable and reproducible junctions. We fabricated Josephson junctions with a focused helium ion beam on our 50 nm YBa2Cu3O7 – δ (YBCO) thin films. We focused on the junction with irradiation doses ranging from 100 to 300 ions/nm and demonstrated that the junction barrier can be modulated by the ion dose and that within this dose range, the junctions behave like superconductor–normal conductor–superconductor junctions. The measurements of the I–V characteristics, Fraunhofer diffraction pattern, and Shapiro steps of the junctions clearly show AC and DC Josephson effects. Our findings demonstrate high reproducibility of junction fabrication using a focused helium ion beam and suggest that commercial devices based on this nanotechnology could operate at liquid nitrogen temperatures.

Fabrication of superconducting qubits and auxiliary devices with niobium base layer

Over the past two decades significant advances have been made in the research of superconducting quantum computing and quantum simulation, in particular of the device design and fabrication that leads to ever-increasing superconducting qubit coherence times and scales. With Google’s announcement of the realization of “quantum supremacy”, superconducting quantum computing has attracted even more attention. Superconducting qubits are macroscopic objects with quantum properties such as quantized energy levels and quantum-state superposition and entanglement. Their quantum states can be precisely manipulated by tuning the magnetic flux, charge, and phase difference of the Josephson junctions with nonlinear inductance through electromagnetic pulse signals, thereby implementing the quantum information processing. They have advantages in many aspects and are expected to become the central part of universal quantum computing. Superconducting qubits and auxiliary devices prepared with niobium or other hard metals like tantalum as bottom layers of large-area components have unique properties and potentials for further development. In this paper the research work in this area is briefly reviewed, starting from the design and working principle of a variety of superconducting qubits, to the detailed procedures of substrate selection and pretreatment, film growth, pattern transfer, etching, and Josephson junction fabrication, and finally the practical superconducting qubit and their auxiliary device fabrications with niobium base layers are also presented. We aim to provide a clear overview for the fabrication process of these superconducting devices as well as an outlook for further device improvement and optimization in order to help establish a perspective for future progress.

Modeling Process and Device Behavior of Josephson Junctions in Superconductor Electronics With TCAD

We report the development of a process/device simulation platform to model superconductor electronics. The process simulator leverages the back-end modeling capabilities of Florida object-oriented process/device/reliability simulator (FLOOXS) and builds on the existing models to simulate processes specific to Josephson junction (JJ) fabrication. The device simulator uses the process generated models and computes the normal-state electrical properties of a Nb/Al-AlO/Nb JJ. It is used to predict key operational figures of merit and how they vary with changes in process models. By integrating the process and device simulation tools, this research aims to offer an environment for the simulation of JJ circuits.

Influence of the thickness of the base Nb layer in a Josephson junction on magnetic flux trapping

We measured the two-dimensional magnetic field dependence of a Josephson current by applying external magnetic fields Hx and Hy parallel to the plane of a Nb/Al-AlOx/Nb Josephson junction from two directions. In addition, we measured the modulation characteristics of the Josephson current by applying a magnetic field Hz in the direction perpendicular to the plane of the junction. When the perpendicular magnetic field Hz was applied to the Josephson junction and removed, the main peak of the Fraunhofer pattern did not return to the origin of the (Hx, Hy) plane completely because the magnetic flux was trapped in the Nb superconducting film around the Josephson junction. In the present study, we investigated the influence of the thickness of the base Nb layer on magnetic flux trapping in a Josephson junction by fabricating Josephson junctions with base Nb layers of different thickness. We found that the magnetic flux became increasingly difficult to be trapped in the Nb superconducting thin film with increasing thickness of the Nb superconducting film.

Epitaxial Al-InAs Heterostructures as Platform for Josephson Junction Field-Effect Transistor Logic Devices

We fabricate Josephson junction field-effect transistors (JJ-FETs) using InAs quantum well heterostructure as the channel, epitaxial Al as superconducting electrodes, and scaled-down Al2O3 gate dielectrics. A systematic investigation of the gate voltage ( ${V}_{{G}}$ ) dependence of the critical current, normal state conductance, and characteristic voltage of the JJ-FETs coupled with capacitance measurements reveals different ${V}_{{G}}$ regimes in the proximity effect characterization of JJ-FETs. Self-consistent Poisson–Schrodinger simulations allow us to associate these ${V}_{{G}}$ regimes with the carriers populating one or more subbands at different vertical locations in the heterostructure. We also discuss the importance of oxide/channel interface quality and its impact on the practical implementation of JJ-FET Boolean logic gates with signal restoration.

A density-functional theory study of the Al/AlOx/Al tunnel junction

The aluminum oxide tunnel junction is a key component of the majority of superconducting quantum devices. For high-quality, reproducible, and scalably manufacturable qubits, the ability to fabricate Josephson junctions (JJs) with a targeted critical current and high uniformity is essential. We use first-principles modeling to assess fundamental aspects of the atomic structure of both amorphous and crystalline aluminum oxide tunnel junctions and relate the structure to predicted performance metrics. We use modified ab initio molecular dynamics to develop realistic models of the tunnel junction, from which interface roughness and local thickness fluctuations are analyzed in an unbiased manner by training a neural network to identify the boundary between metal and oxide. We show that the effective thickness of the insulating part of the junction can be different from the apparent physical thickness. We calculate the rate of Cooper pair tunneling for the atomically resolved electrostatic potential using direct numerical solution in 3D, which shows a channeling effect that impacts the junction critical current. The predicted critical current is a useful JJ design parameter that can be accessed from the ab initio calculations without fitting parameters. To assess the limits of uniformity and fabrication choices (e.g., oxidation vs epitaxy), we compare the amorphous junctions to crystalline models, which show order of magnitude more efficient tunneling compared to the amorphous case, underlining the connection between atomistic structure and Cooper pair tunneling efficiency. Further, this work provides a foundation for ab initio materials design and evaluation to help accelerate future development of improved tunnel junctions.

Superconducting Proximity Effect in InAsSb Surface Quantum Wells with In Situ Al Contacts

We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = \SI{270}{\micro V}$, and excess current, $I_{ex}R_{N} = \SI{200}{\micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.

Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications

Superconducting-insulating-superconducting trilayers have been produced for Josephson Junction fabrication by thermal atomic layer deposition (ALD) processes. The trilayers are composed of alternating layers of Ti0.4N0.6/Al2O3/Ti0.4N0.6, deposited at 450 °C, in a thermal ALD reactor on Al2O3-coated silicon. The conformal nature of the ALD process provides excellent step coverage of superconducting and insulating films. The film thickness of a single ALD cycle, being one mono-layer, allows us to precisely control the tunnel-barrier insulator thickness by counting the number of ALD cycles during the insulator deposition step. Tunnel junctions with critical current approximately 500 A/cm2 are reported. Fabrication of Josephson Junctions and progress toward development of a single-element ALD superconducting quantum interference device are discussed.

π-Loops With ds Josephson Junctions

We fabricated Josephson junctions (JJs) between the d-wave superconductor (SC) YBa 2 Cu 3 O 7 -x (YBCO) and the swave SC Nb (ds-JJs) on graphoepitaxially buffered MgO substrates, studied ds-JJs at temperatures down to 30 mK and employed these JJs in π-loops. Current-voltage characteristics of dsJJs oriented along the [100] axis of YBCO exhibited up to a factor of 200 higher critical current densities than ds-JJs oriented along the [110] axis of YBCO. The critical current I and the IcRn product of [100]-oriented 3 μm wide ds-JJs are ~70 μA and ~200 μV, respectively, at 4.2 K. Rectangular arrays of up to 40 000 π-loops based on such ds-JJs were investigated using a low temperature scanning superconducting quantum interference device (SQUID) microscope. We observed ordering of spontaneously generated half integer magnetic flux quanta in the π-loops correlated with minute spurious background magnetic fields, as well as with configurations and mutual coupling of the π-loops. We manipulated the magnetic states of the π-loops by the local application of magnetic fields using nearby planar coils. This paper paves the way for the use of π-loops in computations that are based on annealing processes.

Toward Increasing the Difficulty of Reverse Engineering of RSFQ Circuits

Integrated circuit (IC) camouflaging is a defense to defeat image-based reverse engineering. The security of CMOS ICs has been extensively studied and camouflage techniques have been developed. A camouflaging method is introduced here to protect superconducting electronics, specifically, rapid single flux quantum (RSFQ) technology, from reverse engineering. RSFQ camouflaged units have been developed by applying the structural similarity of RSFQ standard cells. A defense using camouflaged RSFQ cells combined with obfuscating the temporal distribution of inputs to the IC increases the attacker's effort to decamouflage. The approach establishes the complexity class of RSFQ decamouflaging and a model checker is applied to evaluate the strength of the defenses. These techniques have been evaluated on ISCAS’85 combinational benchmarks and the controllers of the OpenSPARC T1 microprocessor. A dummy Josephson junction fabrication process adds two additional mask steps that increase the cost overhead. Camouflaging 100% of the benchmark circuits results in an area and power overhead of almost 40%. In the case of the OpenSPARC processor, the approach requires near-zero area, power, and performance overhead even when 100% of the sensitive parts of the processor are camouflaged.

Loss Mechanisms and Quasiparticle Dynamics in Superconducting Microwave Resonators Made of Thin-Film Granular Aluminum.

Superconducting high kinetic inductance elements constitute a valuable resource for quantum circuit design and millimeter-wave detection. Granular aluminum (grAl) in the superconducting regime is a particularly interesting material since it has already shown a kinetic inductance in the range of nH/□ and its deposition is compatible with conventional Al/AlOx/Al Josephson junction fabrication. We characterize microwave resonators fabricated from grAl with a room temperature resistivity of 4×10^{3} μΩ cm, which is a factor of 3 below the superconductor to insulator transition, showing a kinetic inductance fraction close to unity. The measured internal quality factors are on the order of Q_{i}=10^{5} in the single photon regime, and we demonstrate that nonequilibrium quasiparticles (QPs) constitute the dominant loss mechanism. Weextract QP relaxation times in the range of 1s and we observe QP bursts every ∼20 s. The current level of coherence of grAl resonators makes them attractive for integration in quantum devices, while it also evidences the need to reduce the density of nonequilibrium QPs.

Side-wall spacer passivated sub-μm Josephson junction fabrication process

We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a sidewall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited linewidth. An additional benefit is avoiding the excessive use of amorphous dielectric materials which is favorable in sub-Kelvin microwave applications often plagued by nonlinear and lossy dielectrics. We apply the structure to niobium trilayer junctions, and provide characterization results yielding evidence on wafer-scale scalability, and critical current density tuning in the range of 0.1–3.0 kA cm−2. We discuss the applicability of the junction process in the context of different applications, such as SQUID magnetometers and Josephson parametric amplifiers.