We studied Josephson flux flow (JFF) in Bi-2212 stacks fabricated from single crystal whiskers by focused ion beam technique. For long junctions with the in-plane sizes 30×2 μm 2, we found considerable contribution of the in-plane dissipation to the JFF resistivity, ρ Jff, at low temperatures. According to recent theory [A. Koshelev, Phys. Rev. B 62 (2000) R3616] that results in quadratic type dependence of ρ Jff( B) with the following saturation. The I– V characteristics in the JFF regime also can be described consistently by that theory. In the JFF regime we found Shapiro-step response to the external mm-wave radiation. The step position is proportional to the frequency of applied microwaves and corresponds to the Josephson emission from all the 60 intrinsic junctions of the stack being synchronized. That implies the coherence of the JFF over the whole thickness of the stack and demonstrates the possibility of synchronization of intrinsic junctions by the magnetic field. We also found a threshold character of the appearance of the JFF branch on the I– V characteristic with the increase of magnetic field, the threshold field B t being scaled with the junction size perpendicular to the field L (L=30–1.4 μ m), as B t≈ Φ 0/ Ls, where s is the interlayer spacing. On the I– V characteristics of small stacks in the JFF regime we found Fiske-step features associated with resonance of Josephson radiation with the main resonance cavity mode in transmission line formed by stacks.