Current-voltage Characteristics Research Articles

Investigating the role of palladium electrical contacts in interactions with carbyne nanomaterial solid matter

Introduction: Traps at the interface between carbyne and palladium nanocoatings, produced at different growth conditions, are explored by current-voltage characteristics, scanning electron microscopy and thermal stimulation of charges for evaluation of their nature. It was found that the Pd films can form an Ohmic contact with the carbyne at certain deposition conditions and such deviated from the Ohmic behavior according to the RF sputtering voltage. This growth parameter was found to affect the interfacial traps formation on the carbyne surface, which is important feature for the charge trapping and releasing properties for hydrogen isotopes in the context of the energy release applications.Methods, Results and Discussion: The sputtering voltages of 0.5 kV and 0.7 kV were found unsuitable for controlled trap formation. Based on the currentvoltage and thermally stimulated current (TSC) measurements, a sputtering voltage of 0.9 kV appeared to be more favorable compared to 0.5 kV and 0.7 kV. At 0.9 kV thermal activation of charge carriers are enabled at lower thermal energies, showing a distinct change in TSC behavior correlated to trap activation.

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology.

Organic material-based bioelectronic nonvolatile memory devices have recently received a lot of attention due to their environmental compatibility, simple fabrication recipe, preferred scalability, low cost, low power consumption, and numerous additional advantages. Resistive random-access memory (RRAM) devices work on the principle of resistive switching, which has the potential for applications in memory storage and neuromorphic computing. Here, natural organically grown orange peel was used to extract biocompatible pectin to design a resistive switching-based memory device of the structure Ag/Pectin/Indium tin oxide (ITO), and the behavior was studied between a temperature range of 10K and 300K. The microscopic characterization revealed the texture of the surface and thickness of the layers. The memristive current-voltage characteristics performed over 1000 consecutive cycles of repeated switching revealed sustainable bipolar resistive switching behavior with a high ON/OFF ratio. The underlying principle of Resistive Switching behavior is based on the formation of conductive filaments between the electrodes, which is explained in this work. Further, we have also designed a 2 × 2 crossbar array of RRAM devices to demonstrate various logic circuit operations useful for neuromorphic computing. The robust switching characteristics suggest possible uses of such devices for the design of ecofriendly bioelectronic memory applications and in-memory computing.

An Innovative AgNP-based Solar Panel Coating and Farmland Fertility Optimization (FFO) based Power Extraction Methodology for Grid Systems

In the power electronic system, coated solar panels attracted a lot of interest in present times. The proposed work aims to achieve two key objectives: maximal power extraction and solar panel coating. To reduce the cost of coating material for solar panels, Silver Nano Particles (AgNPs) are first collected from the leaves of Rose periwinkle plants. This strategy aims to achieve maximal power extraction by coating solar panels with green synthesized silver nanoparticles. To reduce the cost of coating material, Rosy periwinkle plant leaves are used to synthesize silver nanoparticles or AgNPs. To ascertain the framework's capacity for measuring energy both before and after the panels are coated with AgNP, this study theoretically analyses the data. The power current and voltage-current characteristics of the study were validated, enabling an examination of the study's effectiveness. The coated type outperformed the normal solar panel by 2%, according to the results. With a new approach called Farmland Fertility Optimization – Maximum Power Position Tracking, the precise peak site for increased energy yield is discovered. The bi-directional converter is also utilized to mitigate stress and increase voltage gain. To improve the power quality with fewer harmonics, the 3-phase inverter and the LC filtering circuits are used. Finally, a variety of performance measures are used to confirm the results of coated solar panels using power-tracking control techniques. The findings suggest that AgNP-coated solar panels provide the best possible electrical energy with improved voltage, current, and power quality. Performance evaluation shows that the coated solar panel's power tracking efficiency has increased to 99% with decreased harmonics of 2.52%.

Resistive switching suppression in metal/Nb:SrTiO3 Schottky contacts prepared by room-temperature pulsed laser deposition

Deepening the understanding of interface-type resistive switching (RS) in metal/oxide heterojunctions is a key step for the development of high-performance memristors and Schottky rectifiers. In this study, we address the role of metallization technique by fabricating prototypical metal/Nb-doped SrTiO3 (M/NSTO) Schottky contacts via pulsed laser deposition (PLD). Ultrathin Pt and Au electrodes are deposited by PLD onto single-crystal (001)-terminated NSTO substrates and interfacial transport is characterized by conventional macroscale methods and nanoscale Ballistic Electron Emission Microscopy. We show that PLD metallization gives Schottky contacts with highly reversible current-voltage characteristics under cyclic polarization. Room-temperature (RT) transport is governed by thermionic emission with Schottky barrier height ϕB(Pt/NSTO)∼0.71−0.75eV , ϕB(Au/NSTO)∼0.70−0.83eV and ideality factors as small as n(Pt/NSTO)∼1.1 and n(Au/NSTO)∼1.6 . RS remains almost completely suppressed upon imposing broad variations of the Nb doping and of the external stimuli (polarization bias, working temperature, ambient air exposure). At the nanoscale, we find that both systems display high spatial homogeneity of ϕB ( ⩽50meV ), which is only partially affected by the NSTO mixed termination ( |ϕB(M/SrO)−ϕB(M/TiO2)|<35meV ). Experimental evidences and theoretical arguments—based on a metal-insulator-semiconductor description of the M/NSTO—indicate that the PLD metallization mitigates interfacial layer effects responsible for RS. This occurs thanks to the reduction of the interfacial layer thickness and to the creation of an effective barrier against the permeation of ambient gas species affecting charge trapping and redox reactions. This description allows to rationalize interfacial aging effects, observed upon several-months-exposure to ambient air, in terms of a slow interfacial re-oxidation. Our work contributes to the fundamental understanding of interface-type RS and demonstrates that RT PLD offers a viable platform for the realization of robust, RS-free NSTO-based Schottky contacts.

Diffusion-Equation-Based Electrical Modeling for High-Power Lithium Titanium Oxide Batteries

Lithium titanium oxide (LTO) batteries offer superior performance compared to graphite-based anodes in terms of rapid charge/discharge capability and chemical stability, making them promising candidates for fast-charging and power-assist vehicle applications. However, commonly used battery models often struggle to accurately describe the current–voltage characteristics of LTO batteries, particularly before the charge/discharge cutoff conditions. In this work, a novel electrical model based on the solid-phase diffusion equation is proposed to capture the unique electrochemical phenomena arising from the diffusion mismatch between the positive and negative electrodes in high-power LTO batteries. The robustness of the proposed model is evaluated under various loading conditions, including constant current and dynamic current tests, and the results are compared against experimental data. The experimental results for LTO batteries exhibit remarkable alignment with the model estimation, demonstrating a maximum voltage error below 3%.

Enhancement of electrical and photo-electrical properties of P3HT:CrCl2 thin films for photo sensing applications

Abstract In this work, doped and undoped P3HT thin films are prepared and deposited onto ITO interdigitated electrodes. To improve the optical and the electrical properties of the pure P3HT thin film, chromium(II) chloride was used as dopant material with three different weight percentage, 2.5%, 5%, 10%. Room-temperature current-voltage (I-V) characteristics of the samples were measured, showing an increase in the electrical current with increasing the dopant concentration. Under dark condition, the conductivity and resistivity of the pure P3HT thin films were enhanced by a factor of 5x as a result of doping the P3HT by 10 wt.% of CrCl2. Under light intensity (50 mW/cm2) and at 10 V bias, the conductivity and resistivity obtained from P3HT:CrCl2 (10 wt.%) thin films are 4.75x10-4 S/cm and ~2 kΩ, respectively. These results exhibit an enhancement by a factor of ~12x compared to those obtained from pure P3HT thin film. The current of the photo-sensors based on doped/undoped P3HT thin films are measured as a function of time under light intensity ranging from 0 to 50 mW/cm2 at 1 V bias, exhibiting high photo-response and good reproducibility. Three different wavelengths, white, green, and red were used as light sources to expose the photo-sensors. Under white light, photo-sensor based on P3HT:CrCl2(10 wt.%) exhibit the highest values of the photo-responsivity and quantum efficiency, ~23.3 mA/W and 5.8%, respectively, showing an enhancement by a factor of ~ 11.5x compared to those obtained from the photo-sensor based on pure P3HT.

Ionization processes of negative corona discharge. Part 2. Theory. Comparison with experiment

The purpose of the research is a theoretical analysis of ionization processes in the air, which are initiated by a high-voltage field generated by the negative needle-flat electrode electrode system. Methods. Fe, Cu, Al electrodes are used. Calculations are carried out using the methods of quantum mechanics and mathematical physics. Results. The processes of cold and thermoelectron emission of electrons, enhanced by an external high-voltage field (Schottky emission), are analyzed. The conditions under which the generation of charges from the cathode surface due to plasma-chemical reactions and the capture of surface electrons by electronegative oxygen molecules are decisive are investigated. Based on the PE theory, a theory of injection of negative ions from the cathode into an electronegative gas is constructed and the theory is compared with experiment. It has been shown that at small radii of curvature of needle tips, when E ≥ 106 V/cm, the generation of charges is due to cold emission of electrons. In average fields E ≈ 105 V/cm, electron emission is due to the Schottky effect. In fields E ≈ 104 V/cm and below, injection is caused by electrochemical processes and PE capture. A theory has been developed for PEs that appear at electric field intensities on the electrode of the order of several tens of kV/cm, that is, on flat and slightly curved negative electrodes. The capture of PE by electron-withdrawing molecules causes an injection current and, as a consequence, the ignition of a corona discharge. Analytical expressions for the surface density as a function of the local electric field strength, as well as an expression for the injection current, are obtained. The agreement between theory and experiment is satisfactory. Conclusion. An analysis of the development of CR on negative needles is given. A theory of PE at the cathode in strong electric fields was developed. Based on the results of measuring dark negative current-voltage characteristics, it is possible to determine the patterns of surface processes involving electronic transitions, in particular, determine the concentration of PE and injection currents.

Explicit representation of S-shaped and standard V-I curve of illuminated solar cell

A generalised explicit model is proposed in this study to model the S-shaped and standard voltage-current characteristics (V-I) of illuminated solar cells. Even though the voltage-current characteristics of a typical solar cell follow a single exponential model (single diode model), there is evidence of S-shaped voltage-current characteristics that cannot be captured by the existing standard analytical models. The proposed explicit analytic representation is comparatively simple and produces satisfactory results in depicting the voltage-current curve for a wide variety of solar cells, including those with S-shaped characteristics. The methodology for determining the empirical parameters of the proposed model is also described, including an easy estimation of maximum power point voltage using model parameters.

Effect of Acceptor Traps in GaN Buffer Layer on Source/Drain Contact Resistance in AlGaN/GaN High Electron Mobility Transistors

As‐grown GaN buffer layers have a significant electron concentration, which causes an increase in leakage current and a decrease in the breakdown voltage, VBR, of GaN High Electron Mobility Transistors (HEMTs). To prevent this, deep acceptor traps of density, NAT, are added to the GaN layer during growth. While a study on the effect of NAT on VBR is available in the literature, that on the effect of NAT on contact resistance, Rc, of source/drain contacts is lacking. Herein, the following is established using technology computer‐aided design simulations calibrated with measured current–voltage characteristics of ungated AlGaN/GaN structures: 1) Rc increases significantly with NAT and with the depth of the trap level from the conduction band. For trap level 2.5 eV below the conduction band, Rc doubles for an increase in NAT from 1 × 1016 to 5 × 1017 cm−3. 2) The variation of Rc with temperature is non‐monotonic. Over a temperature range of 300–450 K, Rc is nearly constant with temperature for NAT = 1 × 1016 cm−3 and decreases by 20% for NAT = 5 × 1017 cm−3, when traps are 2.5 eV below the conduction band. Also, the degradation of the transfer and output characteristics of GaN HEMTs due to a notable increase in Rc due to NAT is investigated.

BK Channels in Tail Artery Vascular Smooth Muscle Cells of Normotensive (WKY) and Hypertensive (SHR) Rats Possess Similar Calcium Sensitivity but Different Responses to the Vasodilator Iloprost

It has been reported that, in the spontaneously hypertensive rat (SHR) model of hypertension, different components of the G-protein/adenylate cyclase (AC)/Calcium-activated potassium channel of high conductance (BK) channel signaling pathway are altered differently. In the upstream part of the pathway (G-protein/AC), a comparatively low efficacy has been established, whereas downstream BK currents seem to be increased. Thus, the overall performance of this signaling pathway in SHR is elusive. For a better understanding, we focused on one aspect, the direct targeting of the BK channel by the G-protein/AC pathway and tested the hypothesis that the comparatively low AC pathway efficacy in SHR results in a reduced agonist-induced stimulation of BK currents. This hypothesis was investigated using freshly isolated smooth muscle cells from WKY and SHR rat tail artery and the patch-clamp technique. It was observed that: (1) single BK channels have similar current–voltage relationships, voltage-dependence and calcium sensitivity; (2) BK currents in cells with a strong buffering of the BK channel activator calcium have similar current–voltage relationships; (3) the iloprost-induced concentration-dependent increase of the BK current is larger in WKY compared to SHR; (4) the effects of activators of the PKA pathway, the catalytic subunit of PKA and the potent and selective cAMP-analogue Sp-5,6-DCl-cBIMPS on BK currents are similar. Thus, our data suggest that the lower iloprost-induced stimulation of the BK current in freshly isolated rat tail artery smooth muscle cells from SHR compared with WKY is due to the lower efficacy of upstream elements of the G-Protein/AC/BK channel pathway.

Indirect thermographic die temperature measurement of a SiC-based semiconductor diode under the conditions of natural and forced convection

ABSTRACT Information about the die temperature of a semiconductor diode is important to the designer. The shape of the current-voltage characteristics of the semiconductor diode and its operating parameters depend on the value of this temperature. Semiconductor devices that conduct a high current can reach high die and case temperatures. This temperature can be determined by thermographic temperature measurement. The temperature value of the semiconductor diode case will depend on the conditions under which it is operated. For many semiconductor devices, the temperature difference between the case and the die will depend on the convection. Research work was carried out to determine the difference between the die temperature of the semiconductor diode made on the basis of SiC FFSH10120A and its case. The method of making a thermographic temperature measurement of the case of a semiconductor element has been presented and the place where this measurement should be made has been indicated. It was found that in the case of natural convection, the largest difference between the temperature of the semiconductor element and the temperature of its case was 40.1 K. For forced convection, the largest difference between these temperatures was 33.1 K for v = 0.75 m/s and 23.9 K for v = 1.5 m/s.

A test of meta-heuristic algorithms for parameter extraction of next-generation solar cells with S-shaped current–voltage curves

Identifying parameters of photovoltaic (PV) models based on measured current–voltage (IV) characteristic curves is critical for simulating, evaluating, and controlling PV systems. IV characteristics of the latest-generation solar cells (SCs) often display an S-shaped deformation. In this paper, we explore the potential of meta-heuristic algorithms to address the parameter estimation problems associated with PV cells that exhibit S-shaped IV characteristics. This estimation is performed within the framework of the opposed two-diode model. We implemented a total of 14 algorithms from various classes to extract the SC parameters from synthetic IV curves, which were generated using a range of parameter values. The results were compared by using nonparametric statistical methods. These methods include the Wilcoxon signed-rank test for pairwise comparisons, and the Friedman, Friedman Aligned, and Quade tests for multiple comparisons. Comprehensive results and analyses show that the STLBO (Simplified teaching–learning based optimization algorithm) and ADELI (Adaptive differential evolution with the Lagrange interpolation argument) algorithms demonstrate highly competitive performance in terms of accuracy and reliability. This paper underscores the efficacy of advanced meta-heuristic algorithms in solving complex non-linear optimization problems in the domain of photovoltaic research, particularly concerning the unique challenges posed by S-shaped IV characteristics of new-generation solar cells.

Triple-diode solar cell current optimization – An analytical solution based on the Lambert W function

A novel mathematical modeling approach for the Triple-Diode Model (TDM) and its parameter estimation is introduced in this paper. For the first time in the literature, this paper presents two analytical solutions for calculating the current in TDM solar cells using the Lambert W function. Additionally, a new metaheuristic algorithm, the Adaptive Evaporation Rate Water Cycle Algorithm (Adaptive ERWCA), is proposed for estimating TDM solar cell parameters. The proposed algorithm is tested using both the new analytical solutions and a well-known iterative approach for the current-voltage characteristics of the TDM solar cells model. Extensive testing is conducted on three well-known solar cells/modules and a panel under various weather conditions. The results demonstrate that the proposed analytical expressions for the current-voltage characteristics are accurate and highly effective for representing TDM solar cell current. The accuracy of the parameter estimates obtained with the application of the proposed algorithm, considering both analytical solutions and the iterative approach, is compared with existing literature results. It is shown that the proposed algorithm outperforms existing algorithms in solar cell parameter estimation across both the analytical and iterative approaches for current-voltage characteristics. Remarkably, for the RTC France solar cell, the SOLAREX MSX 60 solar module, and the PHOTOWATT-PWP 201 solar module, the obtained Root Mean Square Errors (RMSE) are 0.00075141, 0.01157153, and 0.0010578, respectively. These results are currently the best reported in the literature.

Low-Cost Source Measure Unit (SMU) to Characterize Sensors Built on Graphene-Channel Field-Effect Transistors.

This study introduces a flexible and low-cost solution for a source measure unit (SMU), which is presented as an alternative to conventional source meter units and a blueprint for sensor FET drivers. An SMU collects current-voltage (I-V) curves with an additional variable voltage or current and is commonly used to characterize semiconductors. We present the hardware design, interfacing, and test results of our SMU. Specifically, we present representative I-V curve measurements for graphene-channel FETs to demonstrate the SMU's capability to efficiently characterize these devices with minimal noise and sufficient accuracy. This cost-effective solution presents a promising avenue for researchers and developers seeking reliable tools for sensor development and characterization. We demonstrate, with the example of surface illumination, how the sensing behavior of graphene-channel FETs can be characterized without the need for expensive equipment. Additionally, the SMU was validated with known passive and active components, along with probe station integration for semiconductor die-scale connection. The SMU's focus on collecting I-V curves, coupled with its ability to identify device defects, such as parasitic Schottky junctions or a failed oxide, contributes to its utility in quality testing for semiconductor devices. Its low-cost nature makes it accessible for various research endeavors, enabling efficient data collection and analysis for graphene-based and other nanomaterial-based sensor applications.

Standardizing the optimal photo-diode performance of CuO nanostructures through various morphological patterns

The CuO nanocrystals were prepared using a simple surfactant-assisted co-precipitation technique then addition of anionic surfactants such as Hexamine (HEX), Polyvinyl Pyrrolidone (PVP), Polyvinyl Alcohol (PVA) and Cetyl Trimethyl Ammonium Bromide (CTAB) leads to the formation of CuO nanostructures on the surface of spherical particles. Samples were characterized via X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FT-IR), Field Emission Scanning Electron Microscopy (FESEM), UV–visible diffuse reflectance spectroscopy and I-V characteristics. According to various spectroscopic results, all surfactant decorated CuO nanocrystal have a monoclinic crystal structure. Then the average grain size of CuO samples supported by HEX, PVA, PVP and CTAB is approximately 72 nm. The properties of surfactants have been shown to affect size and shape. In addition, the FT-IR spectra of all samples show three similar vibration modes of CuO, this indicates the presence of a monoclinic CuO crystal structure. According to absorbance data, the quantum confinement effect caused by the use of surfactant significantly affects the optical bandgap value, ranging from 3.00 to 2.59 eV. Current-voltage characteristics [I-V] unveil the photodiode parameters of prepared diode are evaluated in the dark and light condition. In this case, the barrier height (ΦB) is 0.80 eV and the ideal value for the diode (n) is 2.05, which is more suitable for photodiode applications.

DC current–voltage and impedance spectroscopy characterization of nCdS/pZnTe HJ

This paper describes the electrical and dielectric behavior of the nCdS/pZnTe HJ by current–voltage, capacitance–voltage characteristics, and impedance spectroscopy in a temperature interval 220–350 K. A microcrystalline p-ZnTe layer and n-CdS were grown on glass/ZnO substrate by closed space sublimation method. As frontal contact to CdS, the transparent ZnO and as a back contact to ZnTe, silver conductive paste (Ag) treated at 50 °C in vacuum were used. The current–voltage results of nCdS/pZnTe HJ show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The built-in voltage, carrier concentration and depletion width were obtained from the capacitance–voltage measurements. Analysis of the J–V–T and C–V–T characteristics shows that the thermionic emission and recombination current flow mechanisms dominate in the nCdS/pZnTe HJ. The dielectric study reveals that the experimental values of the AC conductivity, dielectric constant, dielectric loss, the imaginary part of the electric modulus are found to be very sensitive to frequency and temperature. The dielectric constant and dielectric loss are observed to be high at the low frequency region. The increase in the values of electric modulus with the frequency implies an increase in the interfacial polarization at the interface of nCdS/pZnTe HJ. Jonscher’s universal power law shows that with increasing frequency, AC conductivity increased. The results conductivity show that the ionic conductivity and interfacial polarization are the main parameters affecting the dielectric properties of the device when the temperature changes.

Strain and piezoelectric control of electronic and photonic properties of p − n diodes

Piezoelectricity is a well-known effect in a vast number of technologically important insulators and semiconductors and exists in 20 out of the 32 three-dimensional crystal classes. The piezoelectric effect is the driving mechanism behind several classical sensors and transmitters, and also most recently, in many nanodevices. Zhong Lin Wang coined the fields piezotronics and piezo-phototronics where the piezoelectric effect plays a dominant role. Piezoelectricity couples in a linear fashion mechanical strain to electrical fields and vice versa. In solids, there is another linear coupling between strain and the electric potential, known as the deformation potential effect. While linear in its coupling nature, this effect does not require the solid to be non-centrosymmetric in contrast to the piezoelectric effect. Moreover, the deformation potential effect is quantitatively huge and leads to changes in the conduction and valence band edges of III–V and II–VI materials of, typically, 50–100 meV in the presence of 1 % strain. Therefore, the deformation potential effect is essential to determine the electronic and photonic properties of bulk and nanostructure semiconductors in the presence of strain. In this work, we compute the relative importance of piezoelectricity and the deformation potential effect in the presence of lattice mismatch and external strain. We choose p − n junctions of ZnO/GaN structures but anticipate that the general conclusions can be carried over to other material structures. The main result of the present work is that both the inclusion of the deformation potential effect and piezoelectricity is crucial to correctly compute the effect of strain on p − n junction current–voltage curves and photonic properties. In our analysis of wurtzite heterostructures, the spontaneous polarization effect is also included but this effect appears to play a minor role for electronic and photonic properties.

Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties

A TCAD simulator is used to model measured current–voltage characteristics of Ni/β-Ga2O3 Schottky barrier diode (SBD), deposited by E-beam evaporation, at room temperature. A good fit was obtained when the Ni workfunction, Ni/β-Ga2O3 interface traps concentrations and Si-doped β-Ga2O3 surface electron affinity variation were taken into consideration. Temperature dependent J-V characteristics were investigated and a good agreement at low voltage was obtained. However, the simulated current at high voltage (series resistance domain) was higher than measurement while both series resistance (Rs) and on-resistance (Ron) for measurements were higher than their simulations counterparts. In order to overcome this disagreement, the effect of Si-doped β-Ga2O3 surface electron affinity on the SBD at each temperature was studied. This is due to the fact that the electron affinity can be affected by trap levels located above conduction band maximum (CBM) as reported in the literature. The surface electron affinity decreased with increasing temperature because trap levels located above CBM were activated. A better agreement was achieved.

Surface and interface chemistry of bromine–methanol‐etched Cd0.9Zn0.1Te crystals

Chemical polishing or chemo‐mechanical polishing is crucial as a last step of surface preparation to remove the damaged layer and contaminants from the surface of CdZnTe crystals. The bromine–methanol solution is widely used for this purpose. However, bromine–methanol solution enriches the surface with Te and results in poor performance of CdZnTe crystals. In this study, the effect of the chemical polishing with 5% bromine–methanol solution on the surface and at the interface is investigated and it is demonstrated that etching duration strongly influences surface stoichiometry and interface contaminants. The evolution of the surface topography with etching and chemical changes are presented. It is shown that after 90 s etching/polishing, subsurface damage is removed and Te enrichment is minimum. Moreover, interface layer thickness is the smallest for 90 s etching duration. It is presented that further increase in the etching duration disturbs the surface stoichiometry and interface depth. It also calculated that 90 s of etching shows low interface barrier and symmetrical current–voltage curve.

Advancing Frontiers: A High-Impact Study on the Synthesis, Characterization, and Superior Device Performance of AlCr2O4/MXene Nanocomposites

Here we present the fabrication of a multilayer resistive memory device (ReRAM) utilizing AlCr2O4/MXene nanocomposite. Comprehensive investigations into the structural and morphological properties of the nanostructures were conducted using various characterization techniques. The fabricated device was tested by measuring I-V characteristics at different current applications which encompasses all previous results. The band gap value for the nanocomposite was reduced to 2.42 eV while that for AlCr2O4 was measured at 3.25 eV via photoluminescence spectrum. Average particle size of the AlCr2O4/MXene nanocomposite was determined to be 25 nm through powder X-ray diffraction analysis. Crystallographic analysis revealed that all crystal peaks conform to the R-3c (167) space group, indicative of a standard hexagonal crystal structure. Energy-dispersive X-ray readings provided further confirmation that all required elements are present in the sample, affirming successful synthesis of the nanocomposite. Notably, the nanocomposite demonstrated exceptional performance as an electrode material in ReRAM, as evidenced by its current-voltage characteristics, making the AlCr2O4/MXene nanocomposite suitable for a wide range of next-generation device applications.